MMBTA56 [DIODES]
PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR; PNP小信号表面贴装晶体管
| 型号： | MMBTA56 |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR |
| 文件： | 总2页 (文件大小：49K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MMBTA55 / MMBTA56
PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Features
·
·
Epitaxial Planar Die Construction
Complementary NPN Types Available
(MMBTA05 / MMBTA06)
Ideal for Medium Power Amplification and
Switching
SOT-23
Dim
A
Min
0.37
1.20
2.30
0.89
0.45
1.78
2.80
0.013
0.903
0.45
0.085
0°
Max
0.51
1.40
2.50
1.03
0.60
2.05
3.00
0.10
1.10
0.61
0.180
8°
A
C
·
B
B
C
C
Mechanical Data
·
·
D
TOP VIEW
B
E
D
G
Case: SOT-23, Molded Plastic
Case material - UL Flammability Rating
Classification 94V-0
Moisture sensitivity: Level 1 per J-STD-020A
Terminals: Solderable per MIL-STD-202,
Method 208
Terminal Connections: See Diagram
MMBTA55 Marking (See Page 2): K2H
MMBTA56 Marking (See Page 2): K2G
Ordering & Date Code Information: See Page 2
Weight: 0.008 grams (approx.)
E
E
G
H
H
K
·
·
M
J
J
L
K
C
·
·
·
·
·
L
M
a
E
B
All Dimensions in mm
@ TA = 25°C unless otherwise specified
Maximum Ratings
Characteristic
Symbol
MMBTA55
-60
MMBTA56
Unit
V
VCBO
VCEO
VEBO
IC
Collector-Base Voltage
-80
-80
Collector-Emitter Voltage
-60
V
Emitter-Base Voltage
-4.0
-500
300
417
V
Collector Current - Continuous (Note 1)
Power Dissipation (Note 1)
mA
mW
°C/W
°C
Pd
RqJA
Tj, TSTG
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage and Temperature Range
-55 to +150
@ TA = 25°C unless otherwise specified
Electrical Characteristics
Characteristic
OFF CHARACTERISTICS (Note 2)
Collector-Base Breakdown Voltage
Symbol
Min
Max
Unit
Test Condition
MMBTA55
MMBTA56
-60
-80
V(BR)CBO
IC = -100mA, IE = 0
¾
V
Collector-Emitter Breakdown Voltage
MMBTA55
MMBTA56
-60
-80
IC = -1.0mA, IB = 0
V(BR)CEO
V(BR)EBO
ICBO
¾
¾
V
V
Emitter-Base Breakdown Voltage
Collector Cutoff Current
IE = -100mA, IC = 0
-4.0
MMBTA55
MMBTA56
VCB = -60V, IE = 0
VCB = -80V, IE = 0
¾
-100
nA
Collector Cutoff Current
MMBTA55
MMBTA56
VCE = -60V, IBO = 0V
VCE = -80V, IBO = 0V
ICEX
¾
-100
nA
ON CHARACTERISTICS (Note 2)
IC = -10mA, VCE = -1.0V
hFE
VCE(SAT)
VBE(SAT)
DC Current Gain
100
¾
¾
I
C = -100mA, VCE = -1.0V
IC = -100mA, IB = -10mA
IC = -100mA, VCE = -1.0V
Collector-Emitter Saturation Voltage
Base- Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
¾
¾
-0.25
-1.2
V
V
VCE = -1.0V, IC = -100mA,
f = 100MHz
fT
Current Gain-Bandwidth Product
50
¾
MHz
Notes:
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. Short duration test pulse used to minimize self-heating effect.
DS30054 Rev. 4 - 2
1 of 2
MMBTA55 / MMBTA56
www.diodes.com
(Note 3)
Ordering Information
Device
Packaging
Shipping
MMBTA55-7
MMBTA56-7
SOT-23
3000/Tape & Reel
Notes:
3. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
K2x = Product Type Marking Code, ex: K2H = MMBTA55
YM = Date Code Marking
Y = Year ex: N = 2002
K2x
M = Month ex: 9 = September
Date Code Key
Year
1998
1999
2000
2001
2002
2003
2004
2005
2006
2007
2008
2009
Code
J
K
L
M
N
P
R
S
T
U
V
W
Month
Code
Jan
Feb
March
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
1
2
3
4
5
6
7
8
9
O
N
D
DS30054 Rev. 4 - 2
2 of 2
MMBTA55 / MMBTA56
www.diodes.com
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