MMST4124-7 [DIODES]
Small Signal Bipolar Transistor, 0.2A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, ULTRA SMALL, PLASTIC PACKAGE-3;
| 型号： | MMST4124-7 |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | Small Signal Bipolar Transistor, 0.2A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, ULTRA SMALL, PLASTIC PACKAGE-3 开关 光电二极管 晶体管 |
| 文件： | 总7页 (文件大小：279K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MMST4124
25V NPN SMALL SIGNAL TRANSISTOR IN SOT323
Features
Mechanical Data
BVCEO > 25V
Case: SOT323
Case Material: Molded Plastic “Green” Molding Compound;
UL Flammability Rating 94V-0
IC = 200mA Collector Current
Epitaxial Planar Die Construction
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish - Matte Tin Plated Leads; Solderable per
Ultra-Small Surface Mount Package
Complementary PNP Type: MMST4126
e3
MIL-STD-202, Method 208
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Weight: 0.006 grams (Approximate)
C
SOT323
B
E
Pin-Out Top view
Top View
Device Symbol
Ordering Information (Note 4)
Product
MMST4124-7-F
Status
Active
Compliance
AEC-Q101
Marking
K1B
Reel Size (inches) Tape Width (mm)
Quantity Per Peel
3,000
7
8
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
SOT323
K1B = Product Type Marking Code
YM = Date Code Marking
Y or Y = Year (ex: D = 2016)
M or M = Month (ex: 9 = September)
K1B
Date Code Key
Year
2016
2017
2018
2019
2020
2021
2022
2023
2024
2025
2026
Code
D
E
F
G
H
I
J
K
L
M
N
Month
Jan
Feb
Mar
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
Code
1
2
3
4
5
6
7
8
9
O
N
D
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© Diodes Incorporated
MMST4124
Document number: DS30163 Rev. 10 - 2
MMST4124
Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
VCBO
VCEO
VEBO
IC
Value
30
25
5.0
200
Unit
V
V
V
mA
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Thermal Characteristics (@TA = +25°C unless otherwise specified.)
Characteristic
Power Dissipation (Note 5)
Symbol
PD
R
Value
200
Unit
mW
°C/W
°C
Thermal Resistance, Junction to Ambient (Note 5)
Operating and Storage Temperature Range
625
JA
-55 to +150
TJ, TSTG
ESD Ratings (Note 6)
Characteristic
Electrostatic Discharge - Human Body Model
Electrostatic Discharge - Machine Model
Symbol
ESD HBM
ESD MM
Value
4,000
400
Unit
V
JEDEC Class
3A
C
V
Notes:
5. For a device mounted with the collector lead on minimum recommended pad layout 1oz copper that is on a single-sided 1.6mm FR-4 PCB; device is
measured under still air conditions whilst operating in a steady-state.
6. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
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© Diodes Incorporated
MMST4124
Document number: DS30163 Rev. 10 - 2
MMST4124
Thermal Characteristics and Derating Information
400
350
300
250
200
150
100
50
0
0
25
50
75 100 125 150 175 200
TA, AMBIENT TEMPERATURE (°C)
Max Power Dissipation vs.
Ambient Temperature
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© Diodes Incorporated
MMST4124
Document number: DS30163 Rev. 10 - 2
MMST4124
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Symbol
Min
Max
Unit
Test Condition
IC = 10µA, IE = 0
IC = 1mA, IB = 0
IE = 10µA, IC = 0
VCB = 20V, IE = 0
VEB= 3.0V, IC = 0
30
25
5
V
V
V
nA
nA
50
50
BVCBO
BVCEO
BVEBO
ICBO
Base Cut-Off Current
IEBO
ON CHARACTERISTICS (Note 7)
120
60
0.30
0.95
IC = 2mA, VCE = 1V
IC = 50mA, VCE = 1V
IC = 50mA, IB = 5mA
IC = 50mA, IB = 5mA
DC Current Gain
hFE
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
V
V
VCE(SAT)
VBE(SAT)
4
8
pF
pF
COBO
CIBO
VCB = 5.0V, f = 1.0MHz, IE = 0
VEB = 0.5V, f = 1.0MHz, IC = 0
Input Capacitance
VCE = 1.0V, IC = 2mA,
f = 1.0MHz
VCE = 20V, IC = 10mA,
f = 100MHz
Small Signal Current Gain
120
480
hFE
fT
Current Gain-Bandwidth Product
300
MHz
Note:
7. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.
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© Diodes Incorporated
MMST4124
Document number: DS30163 Rev. 10 - 2
MMST4124
Typical Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
10
15
IC
IB
f = 1MHz
= 10
10
1
5
0
Cibo
Cobo
0.1
0.1
1
0.1
10
100
1
10
100
1,000
IC, COLLECTOR CURRENT (mA)
Typical Base-Emitter
Saturation Voltage vs. Collector Current
VCB, COLLECTOR-BASE VOLTAGE (V)
Input and Output Capacitance vs.
Collector-Base Voltage
1
1,000
I
C = 10
IB
TA = 125°C
100
TA = 25°C
TA = -25°C
0.1
10
1
VCE = 1.0V
0.01
0.1
1
10
100
1,000
1
1,000
0.1
10
IC, COLLECTOR CURRENT (mA)
Typical DC Current Gain vs. Collector Current
100
IC, COLLECTOR CURRENT (mA)
Typical Collector-Emitter
Saturation Voltage vs. Collector Current
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© Diodes Incorporated
MMST4124
Document number: DS30163 Rev. 10 - 2
MMST4124
Package Outline Dimensions
Please see http://www.diodes.com/package-outlines.html for the latest version.
SOT323
D
A2
SOT323
Dim Min Max
A1 0.00 0.10
A2 0.90 1.00
Typ
0.05
0.95
0.30
0.11
2.15
2.10
1.30
c
a
A1
e
L
b
c
0.25 0.40
0.10 0.18
1.80 2.20
2.00 2.20
b
D
E
E1 1.15 1.35
e
0.650 BSC
e1 1.20 1.40
1.30
F
L
a
0.375 0.475 0.425
0.25 0.40
0° 8°
0.30
--
E
E1
All Dimensions in mm
F
e1
Suggested Pad Layout
Please see http://www.diodes.com/package-outlines.html for the latest version.
SOT323
X
Value
Y
Dimensions
(in mm)
0.650
1.300
0.470
0.600
2.500
C
G
Y1
G
X
Y
Y1
C
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© Diodes Incorporated
MMST4124
Document number: DS30163 Rev. 10 - 2
MMST4124
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2016, Diodes Incorporated
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© Diodes Incorporated
MMST4124
Document number: DS30163 Rev. 10 - 2
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