UFZT855 [DIODES]
Power Bipolar Transistor, 5A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin, SOT-223, 4 PIN;
| 型号： | UFZT855 |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | Power Bipolar Transistor, 5A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin, SOT-223, 4 PIN 开关 光电二极管 晶体管 |
| 文件： | 总3页 (文件大小：164K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SOT223 NPN SILICON PLANAR HIGH CURRENT
(HIGH PERFORMANCE)TRANSISTOR
FZT855
ISSUE 4 - NOVEMBER 2001
✪
FEATURES
*
Up to 5 Amps continuous collector current, up to 10 Amp peak
C
*
*
Very low saturation voltage
Excellent hFE specified up to 10 Amps
E
PARTMARKING DETAIL -
COMPLEMENTARY TYPE -
FZT855
FZT955
C
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
ICM
VALUE
UNIT
Collector-Base Voltage
250
V
V
Collector-Emitter Voltage
Emitter-Base Voltage
150
6
V
Peak Pulse Current
10
A
Continuous Collector Current
Power Dissipation at Tamb=25°C
Operating and Storage Temperature Range
IC
5
A
Ptot
3
W
°C
Tj:Tstg
-55 to +150
*The power which can be dissipated assuming the device is mounted in a typical manner on a
P.C.B. with copper equal to 4 inch square minimum
78
FZT855
ELECTRICAL CHARACTERISTICS (at T
= 25°C unless otherwise stated)
amb
PARAMETER
SYMBOL MIN. TYP.
MAX. UNIT CONDITIONS.
Collector-Base Breakdown
Voltage
V(BR)CBO
V(BR)CER
V(BR)CEO
V(BR)EBO
ICBO
250
250
150
6
375
375
180
8
V
V
V
V
IC=100 A
Collector-Emitter
Breakdown Voltage
IC=1 A, RB 1k
IC=10mA*
IE=100 A
Collector-Emitter
Breakdown Voltage
Emitter-Base Breakdown
Voltage
Collector Cut-Off Current
Collector Cut-Off Current
Emitter Cut-Off Current
50
1
nA
A
VCB=200V
VCB=200V,
T
amb=100°C
ICER
50
1
nA
A
VCB=200V
VCB=200V,
Tamb=100°C
R
1k
IEBO
10
nA
VEB=6V
Collector-Emitter Saturation VCE(sat)
Voltage
20
40
mV
mV
mV
mV
IC=100mA, IB=5mA*
IC=500mA, IB=50mA*
IC=1A, IB=100mA*
IC=5A, IB=500mA*
35
65
60
260
110
355
Base-Emitter
VBE(sat)
VBE(on)
hFE
1250
mV
IC=5A, IB=500mA*
Saturation Voltage
Base-Emitter
Turn-On Voltage
1.1
V
IC=5A, VCE=5V*
Static Forward
Current Transfer
Ratio
100
100
15
200
200
30
IC=10mA, VCE=5V
IC=1A, VCE=5V*
IC=5A, VCE=5V*
IC=10A, VCE=5V*
300
10
Transition Frequency
fT
90
MHz
pF
IC==100mA, VCE=10V
f=50MHz
Output Capacitance
Switching Times
Cobo
22
VCB=10V, f=1MHz
ton
toff
66
2130
ns
ns
IC=1A, IB1=100mA
IB2=100mA, VCC=50V
*Measured under pulsed conditions. Pulse width=300 s. Duty cycle 2%
78
FZT855
TYPICAL CHARACTERISTICS
0.8
0.6
0.4
1.6
1.4
1.2
1.0
300
200
100
0.8
VCE=5V
IC/IB=10
IC/IB=50
VCE=10V
0.6
0.4
0.2
0.2
0
0
100
0.01
0.1
1
10
0.01
0.1
1
10
100
IC - Collector Current (Amps)
C
I
-
Collector Current (Amps)
VCE(sat) v IC
hFE v IC
VCE=5V
2.0
2.0
1.5
1.0
0.5
1.5
1.0
0.5
IC/IB=10
IC/IB=50
1
1
0.001
0.01
0.1
10
100
0.001
0.01
0.1
10
100
IC - Collector Current (Amps)
C
I
-
Collector Current (Amps)
VBE(sat) v IC
VBE(on) v IC
Single Pulse Test Tamb=25C
10
1
DC
1s
100ms
10ms
1ms
100
0.1
s
0.01
1
10
1000
100
VCE - Collector Voltage (V)
Safe Operating Area
78
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