UFZT869 [ZETEX]
Power Bipolar Transistor, 7A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin, SOT-223, 4 PIN;
| 型号： | UFZT869 |
| 厂家： | 
ZETEX SEMICONDUCTORS |
| 描述： | Power Bipolar Transistor, 7A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin, SOT-223, 4 PIN 开关 光电二极管 晶体管 |
| 文件： | 总2页 (文件大小：27K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SOT223 NPN SILICON PLANAR HIGH CURRENT
(HIGH PERFORMANCE) TRANSISTOR
ISSUE 2 - JANUARY 1996
FZT869
FEATURES
*
*
*
*
*
Extremely low equivalent on-resistance; RCE(sat)36mΩ at 5A
7 Amp continuous collector current (20 Amp peak)
Very low saturation voltages
C
Excellent gain charateristics specified upto 20 Amp
Ptot =3 Watts
E
C
PARTMARKING DETAILS -
FZT869
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
ICM
VALUE
UNIT
V
Collector-Base Voltage
60
Collector-Emitter Voltage
Emitter-Base Voltage
25
V
6
V
Peak Pulse Current
20
A
Continuous Collector Current
Power Dissipation at Tamb=25°C
Operating and Storage Temperature Range
IC
7
3
A
Ptot
W
°C
Tj:Tstg
-55 to +150
*The power which can be dissipated assuming the device is mounted in a typical manner on a
P.C.B. with copper equal to 4 inch square minimum
3 - 271
FZT869
ELECTRICAL CHARACTERISTICS (at T
= 25°C unless otherwise stated)
amb
PARAMETER
SYMBOL MIN. TYP.
MAX. UNIT CONDITIONS.
Collector-Base Breakdown
Voltage
V(BR)CBO
V(BR)CER
V(BR)CEO
V(BR)EBO
ICBO
60
60
25
6
120
120
35
V
V
V
V
IC=100µA
Collector-Emitter Breakdown
Voltag
IC=1µA, RB ≤1kΩ
IC=10mA*
Collector-Emitter Breakdown
Voltage
Emitter-Base Breakdown
Voltage
8
IE=100µA
Collector Cut-Off Current
Collector Cut-Off Current
Emitter Cut-Off Current
50
1
nA
µA
VCB=50V
VCB=50V, Tamb=100°C
ICER
R ≤1kΩ
50
1
nA
µA
VCB=50V
VCB=50V, Tamb=100°C
IEBO
10
nA
VEB=6V
Collector-Emitter Saturation
Voltage
VCE(sat)
35
67
168
50
mV
mV
mV
mV
IC=0.5A, IB=10mA*
IC=1A, IB=10mA*
IC=2A, IB=10mA*
IC=6.5A, IB=150mA*
110
215
350
Base-Emitter
Saturation Voltage
VBE(sat)
1.2
V
V
IC=6.5A, IB=300mA
IC=6.5A, VCE=1V*
Base-Emitter Turn-On Voltage VBE(on)
1.13
Static Forward
Current Transfer Ratio
hFE
300
300
200
40
450
450
300
100
IC=10mA, VCE=1V
IC=1A, VCE=1V*
IC=7A, VCE=1V*
IC=20A, VCE=2V*
Transition Frequency
fT
100
70
MHz
pF
IC=100mA, VCE=10V
f=50MHz
Output Capacitance
Switching Times
Cobo
VCB=10V, f=1MHz*
ton
toff
60
680
ns
ns
IC=1A, IB1=100mA
IB2=100mA, VCC=10V
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
Spice parameter data is available upon request for this device
3 - 272
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