UFZT953 [ZETEX]
Power Bipolar Transistor, 5A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4 Pin;![UFZT953](http://pdffile.icpdf.com/pdf2/p00244/img/icpdf/UFZT951_1476476_icpdf.jpg)
型号: | UFZT953 |
厂家: | ![]() |
描述: | Power Bipolar Transistor, 5A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4 Pin 开关 光电二极管 晶体管 |
文件: | 总5页 (文件大小:96K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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SOT223 PNP SILICON PLANAR HIGH CURRENT
(HIGH PERFORMANCE) TRANSISTORS
FZT951
FZT953
ISSUE 3 - APRIL 2000
FEATURES
*
*
*
*
*
5 Amps continuous current , up to 15 Amps peak current
Very low saturation voltages
Excellent gain characteristics specified up to 10 Amps
C
Ptot = 3 watts
E
FZT951 exhibts extremely low equivalent on resistance;
RCE(sat) 55m at 4A
C
COMPLEMENTARY TYPES - FZT951 = FZT851
FZT953 = FZT853
B
PARTMARKING DETAILS -
DEVICE TYPE IN FULL
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
ICM
FZT951
-100
FZT953
-140
UNIT
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
-60
-100
V
-6
V
Peak Pulse Current
-15
-10
A
Continuous Collector Current
Power Dissipation at Tamb=25°C
IC
-5
3
A
Ptot
W
°C
Operating and Storage Temperature
Range
Tj:Tstg
-55 to +150
*The power which can be dissipated assuming the device is mounted in a typical manner on a
P.C.B. with copper equal to 4 square inch minimum
3 - 279
FZT951
ELECTRICAL CHARACTERISTICS (at T
= 25°C unless otherwise stated)
amb
PARAMETER
SYMBOL MIN.
TYP.
-140
MAX. UNIT CONDITIONS.
Collector-Base Breakdown
Voltage
V(BR)CBO
V(BR)CER
V(BR)CEO
V(BR)EBO
ICBO
-100
V
V
V
V
IC=-100 A
Collector-Emitter Breakdown
Voltage
-100
-60
-6
-140
-90
-8
IC=-1 A, RB 1k
IC=-10mA*
IE=-100 A
Collector-Emitter Breakdown
Voltage
Emitter-Base Breakdown
Voltage
Collector Cut-Off Current
Collector Cut-Off Current
Emitter Cut-Off Current
-50
-1
nA
A
V
V
CB=-80V
CB=-80V, Tamb=100°C
ICER
-50
-1
nA
A
V
V
CB=-80V
CB=-80V, Tamb=100°C
R
1k
IEBO
-10
nA
VEB=-6V
Collector-Emitter Saturation
Voltage
VCE(sat)
-20
-50
mV
mV
mV
mV
IC=-100mA, IB=-10mA*
IC=-1A, IB=-100mA*
IC=-2A, IB=-200mA*
IC=-5A, IB=-500mA*
-85
-140
-210
-460
-155
-370
Base-Emitter
VBE(sat)
VBE(on)
hFE
-1080 -1240 mV
IC=-5A, IB=-500mA*
Saturation Voltage
Base-Emitter
Turn-On Voltage
-935
-1070 mV
300
IC=-5A, VCE=-1V*
Static Forward
Current Transfer Ratio
100
100
75
200
200
90
IC=-10mA, VCE=-1V*
IC=-2A, VCE=-1V*
IC=-5A, VCE=-1V*
IC=-10A, VCE=-1V*
10
25
Transition Frequency
fT
120
MHz
pF
IC=-100mA, VCE=-10V
f=50MHz
Output Capacitance
Switching Times
Cobo
74
VCB=-10V, f=1MHz
IC=-2A, IB1=-200mA
ton
toff
82
350
ns
ns
IB2=200mA, VCC=-10V
* Measured under pulsed conditions. Pulse width =300 s. duty cycle 2%
Spice parameter data is available upon request for this device
3 - 280
FZT951
TYPICAL CHARACTERISTICS
-55°C
+25°C
+175°C
I
C B
=50
/I
Tamb=25°C
C B
I /I =10
1.6
1.4
1.2
1.6
1.4
1.2
IC/IB=10
1.0
0.8
0.6
0.4
0.2
1.0
0.8
0.6
0.4
0.2
)
)
a
t
a
t
s
(
s
(
E
C
C
E
0
0
0.001
0.01
0.1
1
10 20
0.001
0.01
0.1
1
10 20
IC
- Collector Current (Amps)
IC
- Collector Current (Amps)
CE(sat)
V
C
CE(sat)
V
C
v I
v I
-55°C
+25°C
+100°C
+175°C
+100°C
+25°C
-55°C
V
CE=1V
C B
I /I =10
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
1.6
1.4
1.2
300
200
100
1.0
0.8
0.6
0.4
0.2
)
a
t
(
s
E
B
F
E
E
F
0.001
0
0.01
0.1
10 20
1
0.001
0.01
0.1
1
10 20
IC
- Collector Current (Amps)
FE
IC
- Collector Current (Amps)
BE(sat)
C
C
v I
h
v I
V
Single Pulse Test at Tamb=25°C
100
10
1
-55°C
+25°C
+100°C
+175°C
VCE=1V
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
D.C.
1s
100ms
10ms
E
B
1.0ms
0.1ms
C
0
0.001
0.01
0.1
1
10 20
0.1
0.1
1
10
100
IC
- Collector Current (Amps)
BE(on)
VCE - Collector Voltage (Volts)
C
V
v I
Safe Operating Area
3 - 281
FZT953
ELECTRICAL CHARACTERISTICS (at T
= 25°C unless otherwise stated)
amb
PARAMETER
SYMBOL MIN.
TYP.
-170
MAX. UNIT CONDITIONS.
Collector-Base Breakdown
Voltage
V(BR)CBO
V(BR)CER
V(BR)CEO
V(BR)EBO
ICBO
-140
V
V
V
V
IC=-100 A
Collector-Emitter Breakdown
Voltage
-140
-100
-6
-170
-120
-8
IC=-1 A, RB 1k
IC=-10mA*
IE=-100 A
Collector-Emitter Breakdown
Voltage
Emitter-Base Breakdown
Voltage
Collector Cut-Off Current
Collector Cut-Off Current
Emitter Cut-Off Current
-50
-1
nA
A
V
CB=-100V
V
CB=-100V, Tamb=100°C
ICER
-50
-1
nA
A
V
CB=-100V
V
CB=-100V, Tamb=100°C
R
1k
IEBO
-10
nA
VEB=-6V
Collector-Emitter Saturation
Voltage
VCE(sat)
-20
-50
mV
mV
mV
mV
IC=-100mA, IB=-10mA*
IC=-1A, IB=-100mA*
IC=-2A, IB=-200mA*
IC=-4A, IB=-400mA*
-90
-115
-220
-420
-160
-300
Base-Emitter
VBE(sat)
VBE(on)
hFE
-1010 -1170 mV
IC=-4A, IB=-400mA*
Saturation Voltage
Base-Emitter
Turn-On Voltage
-925
-1160 mV
300
IC=-4A, VCE=-1V*
Static Forward
Current Transfer
100
100
50
200
200
90
IC=-10mA, VCE=-1V*
IC=-1A, VCE=-1V*
IC=-3A, VCE=-1V*
IC=-4A, VCE=-1V*
IC=-10A, VCE=-1V*
30
50
15
Transition Frequency
fT
125
MHz
pF
IC=-100mA, VCE=-10V
f=50MHz
Output Capacitance
Switching Times
Cobo
65
VCB=-10V, f=1MHz
IC=-2A, IB1=-200mA
ton
toff
110
460
ns
ns
IB2=200mA, VCC=-10V
*Measured under pulsed conditions. Pulse width=300 s. Duty cycle 2%
Spice parameter data is available upon request for this device
3 - 282
FZT953
TYPICAL CHARACTERISTICS
I
C
/I
B
=50
-55°C
+25°C
+175°C
Tamb=25°C
IC/IB=10
1.6
1.4
1.2
1.6
1.4
1.2
C B
I /I
=10
o l t s )
o l t s )
1.0
0.8
0.6
0.4
0.2
1.0
0.8
0.6
0.4
-
( V
-
( V
V
V
0.2
0
0
0.001
0.01
0.1
1
10 20
0.001
0.01
0.1
1
10 20
IC
- Collector Current (Amps)
IC
- Collector Current (Amps)
CE(sat)
V
C
CE(sat)
V
C
v I
v I
+100°C
+25°C
-55°C
-55°C
+25°C
+100°C
+175°C
V
CE=1V
C B
I /I =10
1.6
1.4
1.6
300
200
100
n
1.4
1.2
i
1.2
G a
o l t s )
1.0
0.8
0.6
0.4
0.2
0
1.0
0.8
0.6
0.4
0.2
i s e d
-
( V
l
m
a
r
N o
-
V
h
0.01
0.1
10 20
1
0
0.001
0.01
0.1
1
10 20
IC
- Collector Current (Amps)
FE
IC
- Collector Current (Amps)
BE(sat)
C
C
v I
h
v I
V
Single Pulse Test at Tamb=25°C
10
1
-55°C
+25°C
+100°C
+175°C
p s )
VCE=1V
1.6
A
m
(
1.4
1.2
n
t
e
r
o l t s )
1.0
0.8
0.6
0.4
0.2
C u r
r
D.C.
1s
100ms
10ms
-
( V
t o
c
l
l
V
1.0ms
0.1ms
0.1
C o
-
I
0
0.001
0.01
0.1
1
10 20
0.01
0.1
1
10
100
I
C
- Collector Current (Amps)
BE(on) v I
VCE - Collector Voltage (Volts)
V
C
Safe Operating Area
3 - 283
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