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UFZT953 [ZETEX]

Power Bipolar Transistor, 5A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4 Pin;
UFZT953
型号： UFZT953
厂家： ZETEX SEMICONDUCTORS    ZETEX SEMICONDUCTORS
描述：

Power Bipolar Transistor, 5A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4 Pin

开关 光电二极管 晶体管
文件： 总5页 (文件大小：96K)
中文：  中文翻译
下载：  下载PDF数据表文档文件
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SOT223 PNP SILICON PLANAR HIGH CURRENT  
(HIGH PERFORMANCE) TRANSISTORS  
FZT951  
FZT953  
ISSUE 3 - APRIL 2000  
FEATURES  
*
*
*
*
*
5 Amps continuous current , up to 15 Amps peak current  
Very low saturation voltages  
Excellent gain characteristics specified up to 10 Amps  
C
Ptot = 3 watts  
E
FZT951 exhibts extremely low equivalent on resistance;  
RCE(sat) 55m at 4A  
C
COMPLEMENTARY TYPES - FZT951 = FZT851  
FZT953 = FZT853  
B
PARTMARKING DETAILS -  
DEVICE TYPE IN FULL  
ABSOLUTE MAXIMUM RATINGS.  
PARAMETER  
SYMBOL  
VCBO  
VCEO  
VEBO  
ICM  
FZT951  
-100  
FZT953  
-140  
UNIT  
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
-60  
-100  
V
-6  
V
Peak Pulse Current  
-15  
-10  
A
Continuous Collector Current  
Power Dissipation at Tamb=25°C  
IC  
-5  
3
A
Ptot  
W
°C  
Operating and Storage Temperature  
Range  
Tj:Tstg  
-55 to +150  
*The power which can be dissipated assuming the device is mounted in a typical manner on a  
P.C.B. with copper equal to 4 square inch minimum  
3 - 279  
FZT951  
ELECTRICAL CHARACTERISTICS (at T  
= 25°C unless otherwise stated)  
amb  
PARAMETER  
SYMBOL MIN.  
TYP.  
-140  
MAX. UNIT CONDITIONS.  
Collector-Base Breakdown  
Voltage  
V(BR)CBO  
V(BR)CER  
V(BR)CEO  
V(BR)EBO  
ICBO  
-100  
V
V
V
V
IC=-100 A  
Collector-Emitter Breakdown  
Voltage  
-100  
-60  
-6  
-140  
-90  
-8  
IC=-1 A, RB 1k  
IC=-10mA*  
IE=-100 A  
Collector-Emitter Breakdown  
Voltage  
Emitter-Base Breakdown  
Voltage  
Collector Cut-Off Current  
Collector Cut-Off Current  
Emitter Cut-Off Current  
-50  
-1  
nA  
A
V
V
CB=-80V  
CB=-80V, Tamb=100°C  
ICER  
-50  
-1  
nA  
A
V
V
CB=-80V  
CB=-80V, Tamb=100°C  
R
1k  
IEBO  
-10  
nA  
VEB=-6V  
Collector-Emitter Saturation  
Voltage  
VCE(sat)  
-20  
-50  
mV  
mV  
mV  
mV  
IC=-100mA, IB=-10mA*  
IC=-1A, IB=-100mA*  
IC=-2A, IB=-200mA*  
IC=-5A, IB=-500mA*  
-85  
-140  
-210  
-460  
-155  
-370  
Base-Emitter  
VBE(sat)  
VBE(on)  
hFE  
-1080 -1240 mV  
IC=-5A, IB=-500mA*  
Saturation Voltage  
Base-Emitter  
Turn-On Voltage  
-935  
-1070 mV  
300  
IC=-5A, VCE=-1V*  
Static Forward  
Current Transfer Ratio  
100  
100  
75  
200  
200  
90  
IC=-10mA, VCE=-1V*  
IC=-2A, VCE=-1V*  
IC=-5A, VCE=-1V*  
IC=-10A, VCE=-1V*  
10  
25  
Transition Frequency  
fT  
120  
MHz  
pF  
IC=-100mA, VCE=-10V  
f=50MHz  
Output Capacitance  
Switching Times  
Cobo  
74  
VCB=-10V, f=1MHz  
IC=-2A, IB1=-200mA  
ton  
toff  
82  
350  
ns  
ns  
IB2=200mA, VCC=-10V  
* Measured under pulsed conditions. Pulse width =300 s. duty cycle 2%  
Spice parameter data is available upon request for this device  
3 - 280  
FZT951  
TYPICAL CHARACTERISTICS  
-55°C  
+25°C  
+175°C  
I
C B  
=50  
/I  
Tamb=25°C  
C B  
I /I =10  
1.6  
1.4  
1.2  
1.6  
1.4  
1.2  
IC/IB=10  
1.0  
0.8  
0.6  
0.4  
0.2  
1.0  
0.8  
0.6  
0.4  
0.2  
)
)
a
t
a
t
s
(
s
(
E
C
C
E
0
0
0.001  
0.01  
0.1  
1
10 20  
0.001  
0.01  
0.1  
1
10 20  
IC  
- Collector Current (Amps)  
IC  
- Collector Current (Amps)  
CE(sat)  
V
C
CE(sat)  
V
C
v I  
v I  
-55°C  
+25°C  
+100°C  
+175°C  
+100°C  
+25°C  
-55°C  
V
CE=1V  
C B  
I /I =10  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0
1.6  
1.4  
1.2  
300  
200  
100  
1.0  
0.8  
0.6  
0.4  
0.2  
)
a
t
(
s
E
B
F
E
E
F
0.001  
0
0.01  
0.1  
10 20  
1
0.001  
0.01  
0.1  
1
10 20  
IC  
- Collector Current (Amps)  
FE  
IC  
- Collector Current (Amps)  
BE(sat)  
C
C
v I  
h
v I  
V
Single Pulse Test at Tamb=25°C  
100  
10  
1
-55°C  
+25°C  
+100°C  
+175°C  
VCE=1V  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
D.C.  
1s  
100ms  
10ms  
E
B
1.0ms  
0.1ms  
C
0
0.001  
0.01  
0.1  
1
10 20  
0.1  
0.1  
1
10  
100  
IC  
- Collector Current (Amps)  
BE(on)  
VCE - Collector Voltage (Volts)  
C
V
v I  
Safe Operating Area  
3 - 281  
FZT953  
ELECTRICAL CHARACTERISTICS (at T  
= 25°C unless otherwise stated)  
amb  
PARAMETER  
SYMBOL MIN.  
TYP.  
-170  
MAX. UNIT CONDITIONS.  
Collector-Base Breakdown  
Voltage  
V(BR)CBO  
V(BR)CER  
V(BR)CEO  
V(BR)EBO  
ICBO  
-140  
V
V
V
V
IC=-100 A  
Collector-Emitter Breakdown  
Voltage  
-140  
-100  
-6  
-170  
-120  
-8  
IC=-1 A, RB 1k  
IC=-10mA*  
IE=-100 A  
Collector-Emitter Breakdown  
Voltage  
Emitter-Base Breakdown  
Voltage  
Collector Cut-Off Current  
Collector Cut-Off Current  
Emitter Cut-Off Current  
-50  
-1  
nA  
A
V
CB=-100V  
V
CB=-100V, Tamb=100°C  
ICER  
-50  
-1  
nA  
A
V
CB=-100V  
V
CB=-100V, Tamb=100°C  
R
1k  
IEBO  
-10  
nA  
VEB=-6V  
Collector-Emitter Saturation  
Voltage  
VCE(sat)  
-20  
-50  
mV  
mV  
mV  
mV  
IC=-100mA, IB=-10mA*  
IC=-1A, IB=-100mA*  
IC=-2A, IB=-200mA*  
IC=-4A, IB=-400mA*  
-90  
-115  
-220  
-420  
-160  
-300  
Base-Emitter  
VBE(sat)  
VBE(on)  
hFE  
-1010 -1170 mV  
IC=-4A, IB=-400mA*  
Saturation Voltage  
Base-Emitter  
Turn-On Voltage  
-925  
-1160 mV  
300  
IC=-4A, VCE=-1V*  
Static Forward  
Current Transfer  
100  
100  
50  
200  
200  
90  
IC=-10mA, VCE=-1V*  
IC=-1A, VCE=-1V*  
IC=-3A, VCE=-1V*  
IC=-4A, VCE=-1V*  
IC=-10A, VCE=-1V*  
30  
50  
15  
Transition Frequency  
fT  
125  
MHz  
pF  
IC=-100mA, VCE=-10V  
f=50MHz  
Output Capacitance  
Switching Times  
Cobo  
65  
VCB=-10V, f=1MHz  
IC=-2A, IB1=-200mA  
ton  
toff  
110  
460  
ns  
ns  
IB2=200mA, VCC=-10V  
*Measured under pulsed conditions. Pulse width=300 s. Duty cycle 2%  
Spice parameter data is available upon request for this device  
3 - 282  
FZT953  
TYPICAL CHARACTERISTICS  
I
C
/I  
B
=50  
-55°C  
+25°C  
+175°C  
Tamb=25°C  
IC/IB=10  
1.6  
1.4  
1.2  
1.6  
1.4  
1.2  
C B  
I /I  
=10  
o l t s )  
o l t s )  
1.0  
0.8  
0.6  
0.4  
0.2  
1.0  
0.8  
0.6  
0.4  
-
( V  
-
( V  
V
V
0.2  
0
0
0.001  
0.01  
0.1  
1
10 20  
0.001  
0.01  
0.1  
1
10 20  
IC  
- Collector Current (Amps)  
IC  
- Collector Current (Amps)  
CE(sat)  
V
C
CE(sat)  
V
C
v I  
v I  
+100°C  
+25°C  
-55°C  
-55°C  
+25°C  
+100°C  
+175°C  
V
CE=1V  
C B  
I /I =10  
1.6  
1.4  
1.6  
300  
200  
100  
n
1.4  
1.2  
i
1.2  
G a  
o l t s )  
1.0  
0.8  
0.6  
0.4  
0.2  
0
1.0  
0.8  
0.6  
0.4  
0.2  
i s e d  
-
( V  
l
m
a
r
N o  
-
V
h
0.01  
0.1  
10 20  
1
0
0.001  
0.01  
0.1  
1
10 20  
IC  
- Collector Current (Amps)  
FE  
IC  
- Collector Current (Amps)  
BE(sat)  
C
C
v I  
h
v I  
V
Single Pulse Test at Tamb=25°C  
10  
1
-55°C  
+25°C  
+100°C  
+175°C  
p s )  
VCE=1V  
1.6  
A
m
(
1.4  
1.2  
n
t
e
r
o l t s )  
1.0  
0.8  
0.6  
0.4  
0.2  
C u r  
r
D.C.  
1s  
100ms  
10ms  
-
( V  
t o  
c
l
l
V
1.0ms  
0.1ms  
0.1  
C o  
-
I
0
0.001  
0.01  
0.1  
1
10 20  
0.01  
0.1  
1
10  
100  
I
C
- Collector Current (Amps)  
BE(on) v I  
VCE - Collector Voltage (Volts)  
V
C
Safe Operating Area  
3 - 283  

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