UZXT953KTC [DIODES]
Power Bipolar Transistor, 5A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 2 Pin, DPAK-3;
| 型号： | UZXT953KTC |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | Power Bipolar Transistor, 5A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 2 Pin, DPAK-3 开关 晶体管 |
| 文件： | 总6页 (文件大小：137K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ZXT953K
100V PNP LOW SATURATION MEDIUM POWER TRANSISTOR IN D-PAK
SUMMARY
BVCEO = -100V : RSAT = 67m ; IC = -5A
DESCRIPTION
Packaged in the D-Pak outline this high current high perform ance 100V PNP
transistor offers low on state losses m aking it ideal for use in DC-DC circuits
and various driving and power m anagem ent functions.
FEATURES
DPAK
• 5 am ps continuous current
• Up to 10 am ps peak current
• Low equivalent on resistance
• Low saturation voltages
APPLICATIONS
• DC - DC converters
• DC - DC m odules
• Power switches
• Motor control
• Autom otive circuits
• Inverter circuits
PINOUT
ORDERING INFORMATION
DEVICE
REEL
SIZE
TAPE
WIDTH
QUANTITY PER
REEL
ZXT953KTC
13"
16m m
2500 units
DEVICE MARKING
• ZXT953
TOP VIEW
ISSUE 1 - DECEMBER 2003
1
S E M IC O N D U C T O R S
ZXT953K
ABSOLUTE MAXIMUM RATINGS
PARAMETER
S YMBOL
LIMIT
-140
-140
-100
-7
UNIT
V
Co lle cto r-b a s e vo lta g e
Co lle cto r-b a s e vo lta g e
Co lle cto r-e m itte r vo lta g e
Em itte r-b a s e vo lta g e
BV
BV
BV
BV
CBO
CER
CEO
EBO
V
V
V
Pe a k p u ls e cu rre n t
I
I
I
-10
A
CM
(b )
Co n tin u o u s co lle cto r cu rre n t
-5
A
C
B
Ba s e cu rre n t
-0.5
A
(a )
Po w e r d is s ip a tio n a t T =25°C
A
P
P
P
2.1
W
D
D
D
Lin e a r d e ra tin g fa cto r
16.8
m W/°C
(b )
(c)
Po w e r d is s ip a tio n a t T =25°C
A
3.2
W
Lin e a r d e ra tin g fa cto r
25.6
m W/°C
Po w e r d is s ip a tio n a t T =25°C
A
4.2
W
Lin e a r d e ra tin g fa cto r
33.6
m W/°C
Op e ra tin g a n d s to ra g e te m p e ra tu re ra n g e
T , T
-55 to +150
°C
j
s tg
THERMAL RESISTANCE
PARAMETER
S YMBOL
VALUE
59
UNIT
°C/W
°C/W
°C/W
(a )
J u n ctio n to a m b ie n t
R
R
R
⍜J A
⍜J A
⍜J A
(b )
J u n ctio n to a m b ie n t
39
(c)
J u n ctio n to a m b ie n t
30
NOTES
(a) For a device surface m ounted on 25m m x 25m m x 1.6m m FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
(b) For a device surface m ounted on 50m m x 50m m x 1.6m m FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
(c) For a device surface m ounted on 50m m x 50m m x 1.6m m FR4 PCB with high coverage of single sided 2oz copper, in still air conditions.
ISSUE 1 - DECEMBER 2003
2
S E M IC O N D U C T O R S
ZXT953K
CHARACTERISTICS
ISSUE 1 - DECEMBER 2003
3
S E M IC O N D U C T O R S
ZXT953K
ELECTRICAL CHARACTERISTICS (at T
= 25°C unless otherwise stated)
am b
PARAMETER
S YMBOL
MIN.
-140
-140
-100
-7
TYP. MAX. UNIT CONDITIONS
Co lle cto r-b a s e b re a kd o w n vo lta g e
Co lle cto r-e m itte r b re a kd o w n vo lta g e
Co lle cto r-e m itte r b re a kd o w n vo lta g e
Em itte r-b a s e b re a kd o w n vo lta g e
Co lle cto r cu t-o ff cu rre n t
BV
BV
BV
BV
-170
-170
-125
-8.1
Ͻ1
V
V
I
I
I
I
= -100A
CBO
CER
CEO
EBO
C
C
C
E
= -1A, R =Յ1k⍀
BE
V
= -10m A*
V
= -100A
I
I
I
-20
-20
-10
n A
n A
n A
V
= -100V
CBO
CB
Co lle cto r cu t-o ff cu rre n t
Ͻ1
V
= -100V, R = Յ1k⍀
CER
EBO
CB
BE
Em itte r cu t-o ff cu rre n t
Ͻ1
V
= -6V
EB
Co lle cto r-e m itte r s a tu ra tio n vo lta g e
V
-20
-80
-30
m V
m V
m V
m V
I
= -0.1A, I = -10m A*
C B
CE(S AT)
-100
-175
-390
I
= -1A, I = -100m A*
B
C
-140
-335
I
= -2A, I = -200m A*
B
C
I
= -5A, I = -500m A*
B
C
Ba s e -e m itte r s a tu ra tio n vo lta g e
Ba s e -e m itte r tu rn -o n vo lta g e
V
V
-1.01
-1.1
m V
m V
I
= -5A, I = -500m A*
BE(S AT)
BE(ON)
FE
C
C
C
B
-0.94 -1.05
225
I
= -5A, V = -1V*
CE
S ta tic fo rw a rd cu rre n t tra n s fe r ra tio
h
100
100
50
I
I
= -10m A, V = -1V*
CE
200
85
300
= -1A, V = -1V*
CE
C
I
= -3A, V = -1V*
CE
C
15
30
I
= -5A, V = -1V*
CE
C
15
I
= -10A, V = -1V*
CE
C
Tra n s itio n fre q u e n cy
f
125
MHz
p F
I = -100m A, V = -10V
C CE
T
f = 50MHz
V = -10V, f = 1MHz*
CB
Ou tp u t ca p a cita n ce
S w itch in g tim e s
C
65
OBO
t
t
110
460
n S
nS
I
I
= -2A, V = -10V,
CC
ON
C
= I = -200m A
OFF
B1
B2
* Measured under pulsed conditions. Pulse width Յ 300s; duty cycle Յ 2%.
ISSUE 1 - DECEMBER 2003
4
S E M IC O N D U C T O R S
ZXT953K
TYPICAL CHARACTERISTICS
ISSUE 1 - DECEMBER 2003
5
S E M IC O N D U C T O R S
ZXT953K
PACKAGE OUTLINE
Controlling dim ensions are in m illim eters. Approxim ate conversions are given in inches
PACKAGE DIMENSIONS
Millim eters
Inches
Min
Millim eters
Min Max
2.30 BSC
Inches
Min Max
0.090 BSC
DIM
DIM
Min
2.18
ᎏ
Max
Max
0.094
0.005
0.035
0.045
0.215
0.024
0.023
0.245
A
A1
b
2.38
0.127
0.89
1.114
5.46
0.609
0.584
6.22
ᎏ
0.086
e
H
9.40
1.40
10.41
1.78
0.370
0.055
0.410
0.070
0.635
0.762
5.20
0.457
0.457
5.97
5.20
6.35
4.32
0.025
0.030
0.205
0.018
0.018
0.235
0.205
0.250
0.170
L
b2
b3
c
L1
L2
L3
L4
L5
⍜1Њ
⍜Њ
2.74 REF
0.051 BSC
0.108 REF
0.020 BSC
0.89
1.27
1.01
1.52
10Њ
0.035
0.050
0.040
0.060
10Њ
c2
D
0.635
1.14
0Њ
0.025
0.045
0Њ
D1
E
6.73
ᎏ
0.265
0Њ
15Њ
0Њ
15Њ
E1
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ISSUE 1 - DECEMBER 2003
6
S E M IC O N D U C T O R S
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