ZUMT591TA [DIODES]
Transistor;
| 型号： | ZUMT591TA |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | Transistor |
| 文件： | 总2页 (文件大小：49K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SOT323 PNP SILICON PLANAR
HIGH PERFORMANCE TRANSISTOR
DRAFT SPECIFICATION ISSUE A – OCTOBER 94
ZUMT591
FEATURES
*
*
*
Extremely low saturation voltage
500mW power dissipation
1 Amp continuous collector current (IC)
E
C
APPLICATIONS
Ideally suited for space / weight critical applications
*
B
SOT323
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
ICM
VALUE
UNIT
V
Collector-Base Voltage
-80
Collector-Emitter Voltage
Emitter-Base Voltage
-60
V
-5
V
Peak Pulse Current
-2
-1
A
Continuous Collector Current
Base Current
IC
A
IB
-200
mA
mW
°C
Power Dissipation at Tamb=25°C
Operating and Storage Temperature Range
Ptot
500
Tj:Tstg
-55 to +150
ELECTRICAL CHARACTERISTICS (at T
= 25°C).
amb
TYP.
PARAMETER
SYMBOL MIN.
MAX.
UNIT
CONDITIONS.
Collector-Base
V(BR)CBO
-80
-60
-5
V
V
V
IC=-100µA, IE=-0
IC=-10mA*, IB=-0
IE=-100µA, IC=-0
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
VCEO(sus)
Emitter-Base Breakdown V(BR)EBO
Voltage
Collector Cut-Off Current ICBO
Collector Cut-Off Current ICES
-100
-100
-100
nA
nA
nA
VCB=-60V
VCE=-60V
Emitter Cut-Off Current
IEBO
VEB=-4V, IC=-0
Collector-Emitter
Saturation Voltage
VCE(sat)
-0.3
-0.6
V
V
IC=-500mA, IB=-50mA*
IC=-1A, IB=-100mA*
Base-Emitter
Saturation Voltage
VBE(sat)
-1.2
V
IC=-1A, IB=-100mA*
Base-Emitter
Turn On Voltage
VBE(on)
-1.0
V
IC=-1A, VCE=-5V*
* Measured under pulsed conditions. Pulse width=300µs. Duty cycle®2%
ZUMT591
ELECTRICAL CHARACTERISTICS (at T
= 25°C).
amb
TYP.
PARAMETER
SYMBOL MIN.
MAX.
UNIT
CONDITIONS.
Static Forward Current
Transfer Ratio
hFE
100
100
80
IC=-1mA, VCE=-5V*
IC=-500mA, VCE=-5V*
IC=-1A, VCE=-5V*
IC=-2A, VCE=-5V*
300
15
Transition Frequency
Ouput Capacitance
fT
150
MHz
pF
IC=-50mA, VCE=-10V*
f=100MHz
Cobo
10
VCB=-10V, f=1MHz
* Measured under pulsed conditions. Pulse width=300µs. Duty cycle®2%
NOTE
This data is derived from development material and does not necessarily mean that the device will
go into production
© Zetex Semiconductors plc 2005
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This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used,
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