ZUMT617TA [ZETEX]
TRANSISTOR SOT-323 ; 晶体管SOT- 323\n
| 型号： | ZUMT617TA |
| 厂家： | 
ZETEX SEMICONDUCTORS |
| 描述： | TRANSISTOR SOT-323
|
| 文件： | 总3页 (文件大小：132K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Super323 SOT323 NPN SILICON POWER
ZUMT617
(SWITCHING) TRANSISTOR
ISSUE 1 - SEPTEMBER 1998
FEATURES
*
*
*
*
*
500mW POWER DISSIPATION
IC CONT 1.5A
5A Peak Pulse Current
Excellent HFE Characteristics Up To 5A (pulsed)
Extremely Low Equivalent On Resistance; RCE(sat)
APPLICATIONS
*
*
DC-DC converter boost functions
Motor drive functions
DEVICE TYPE
ZUMT617
COMPLEMENT
ZUMT717
PARTMARKING
T61
RCE(sat)
135mΩ at 1.5A
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
15
UNIT
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current**
Continuous Collector Current
Base Current
VCBO
VCEO
VEBO
ICM
IC
15
V
5
V
5
A
1.5
200
A
IB
mA
mW
Power Dissipation at Tamb=25°C*
Ptot
385 †
500 ‡
Operating and Storage Temperature Tj:Tstg
Range
-55 to +150
°C
†
‡
Recommended Ptot calculated using FR4 measuring 10 x 8 x 0.6mm (still air).
Maximum power dissipation is calculated assuming that the device is mounted on FR4
size 25x25x0.6mm and using comparable measurement methods adopted by other suppliers.
ZUMT617
ELECTRICAL CHARACTERISTICS (at T
= 25°C unless otherwise stated).
amb
PARAMETER
SYMBOL
V(BR)CBO
MIN.
TYP.
MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
15
15
5
V
IC= 100µA
IC= 10mA*
IE= 100µA
VCB= 10V
VEB= 4V
Collector-Emitter
Breakdown Voltage
V(BR)CEO
V(BR)EBO
ICBO
V
Emitter-Base
Breakdown Voltage
V
Collector Cut-Off
Current
10
10
10
nA
nA
nA
Emitter Cut-Off
Current
IEBO
Collector Emitter
Cut-Off Current
ICES
VCES= 10V
Collector-Emitter
Saturation Voltage
VCE(sat)
16.5
40
20
mV
mV
mV
mV
mV
IC= 100mA, IB=10mA*
IC= 250mA, IB= 10mA*
IC= 500mA, IB=10mA*
IC= 1A, IB=10mA*
55
75
100
200
245
150
205
IC= 1.5A, IB=20mA*
Base-Emitter
Saturation Voltage
VBE(sat)
930
1100
mV
IC= 1.5A, IB=20mA*
Base-Emitter Turn-On VBE(on)
Voltage
865
1100
mV
I = 1.5A, VCE= 2V*
C
Static Forward
Current Transfer
Ratio
hFE
200
300
250
200
75
420
450
390
300
150
75
IC= 10mA, VCE= 2V*
IC= 100mA, VCE= 2V*
IC= 500mA, VCE=2V*
IC= 1A, VCE=2 V*
IC= 3A, VCE=2V*
30
IC=5A, VCE= 2V*
Transition
Frequency
fT
180
MHz
IC= 50mA, VCE= 10V
f= 100MHz
Output Capacitance
Turn-On Time
Cobo
t(on)
t(off)
15
pF
ns
ns
VCB= 10V, f=1MHz
VCC= 10V, IC= 1A
50
IB1=IB2=100mA
Turn-Off Time
250
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
ZUMT617
TYPICAL CHARACTERISTICS
0.4
0.3
0.2
0.1
0
0.4
+25°C
IC/IB=50
0.3
IC/IB=10
IC/IB=50
IC/IB=100
-55°C
+25°C
+100°C
+150°C
0.2
0.1
0
1m
10m
100m
1
10
1m
10m
100m
1
10
IC - Collector Current (A)
IC - Collector Current (A)
VCE(sat) v IC
VCE(sat) v IC
800
600
400
200
0
VCE=2V
IC/IB=50
1.0
0.75
0.5
+100°C
+25°C
-55°C
+25°C
+100°C
+150°C
-55°C
0.25
0
1m
10m
100m
1
10
1m
10m
100m
1
10
IC - Collector Current (A)
IC - Collector Current (A)
hFE v IC
VBE(sat) v IC
10
1
1.0
0.8
0.6
0.4
0.2
0
DC
1s
100ms
10ms
1ms
-55°C
100m
+25°C
+100°C
+150°C
100us
10m
100m
1
10
100
1m
10m
100m
1
10
IC - Collector Current (A)
VCE - Collector Emitter Voltage (V)
VBE(on) v IC
Safe Operating Area
相关型号：
ZUMT618TA
Small Signal Bipolar Transistor, 1.25A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon,
DIODES
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