ZUMT618TA [DIODES]
Small Signal Bipolar Transistor, 1.25A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon,;
| 型号： | ZUMT618TA |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | Small Signal Bipolar Transistor, 1.25A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, 开关 光电二极管 晶体管 |
| 文件： | 总3页 (文件大小：122K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Super323 SOT323 NPN SILICON
ZUMT618
POWER(SWITCHING) TRANSISTOR
ISSUE 1 - SEPTEMBER 1998
FEATURES
*
*
*
*
*
500mW POWER DISSIPATION
IC CONT 1.25A
3A Peak Pulse Current
Excellent HFE Characteristics Up to 3A (pulsed)
Extremely Low Equivalent On Resistance; RCE(sat)
APPLICATIONS
*
*
*
Corded telecoms.
Boost functions in DC-DC converters
Motor driver functions
DEVICE TYPE
ZUMT618
COMPLEMENT
ZUMT718
PARTMARKING
T62
RCE(sat)
125mΩ at1.25A
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
ICM
VALUE
20
UNIT
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current**
Continuous Collector Current
Base Current
20
V
5
V
4
A
IC
1.25
500
A
IB
mA
mW
Power Dissipation at Tamb=25°C
Ptot
385 †
500 ‡
Operating and Storage Temperature Tj:Tstg
Range
-55 to +150
°C
†
‡
Recommended Ptot calculated using FR4 measuring 10 x 8 x 0.6mm (still air).
Maximum power dissipation is calculated assuming that the device is mounted on FR4
size 25x25x0.6mm and using comparable measurement methods adopted by other suppliers.
ZUMT618
ELECTRICAL CHARACTERISTICS (at T
= 25°C unless otherwise stated).
amb
PARAMETER
SYMBOL
V(BR)CBO
MIN. TYP.
MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
20
V
IC= 100µA
IC= 10mA*
IE= 100µA
VCB= 16V
VEB= 4V
Collector-Emitter
Breakdown Voltage
V(BR)CEO
V(BR)EBO
ICBO
20
5
V
Emitter-Base
Breakdown Voltage
V
Collector Cut-Off
Current
10
10
10
nA
nA
nA
Emitter Cut-Off
Current
IEBO
Collector Emitter
Cut-Off Current
ICES
VCES= 16V
Collector-Emitter
Saturation Voltage
VCE(sat)
16.5
40
25
mV
mV
mV
mV
mV
IC= 100mA, IB=10mA*
IC= 250mA, IB= 10mA*
IC= 500mA, IB=10mA*
IC= 1A, IB=20mA*
60
80
115
200
250
140
155
IC= 1.25A, IB=50mA*
Base-Emitter
VBE(sat)
VBE(on)
hFE
955
1100 mV
IC= 1.25A, IB=50mA*
Saturation Voltage
Base-Emitter
Turn-On Voltage
840
1100 mV
I = 1.25A, VCE= 2V*
C
Static Forward
Current Transfer
Ratio
200
300
200
100
40
420
450
380
300
180
60
IC= 10mA, VCE= 2V*
IC= 100mA, VCE= 2V*
IC= 500mA, VCE=2V*
IC= 1A, VCE=2 V*
IC= 2A, VCE=2V*
IC=4A, VCE= 2V*
20
Transition
Frequency
fT
210
MHz
IC= 50mA, VCE=10V
f= 100MHz
Output Capacitance
Turn-On Time
Cobo
t(on)
t(off)
10
pF
ns
ns
VCB= 10V, f=1MHz
VCC=10 V, IC=1A
50
IB1=IB2=100mA
Turn-Off Time
275
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
ZUMT618
TYPICAL CHARACTERISTICS
0.4
0.3
0.2
0.1
0
0.4
+25°C
IC/IB=50
0.3
IC/IB=10
IC/IB=50
IC/IB=100
-55°C
+25°C
+100°C
+150°C
0.2
0.1
0
1m
10m
100m
1
10
1m
10m
100m
1
10
IC - Collector Current (A)
IC - Collector Current (A)
VCE(sat) v IC
VCE(sat) v IC
IC/IB=50
VCE=2V
1.0
0.8
0.6
0.4
600
400
200
0
+100°C
+25°C
-55°C
-55°C
+25°C
+100°C
+150°C
0.2
0
1m
10m
100m
1
10
1m
10m
100m
1
10
IC - Collector Current (A)
IC - Collector Current (A)
hFE v IC
VBE(sat) v IC
1.0
0.8
0.6
0.4
0.2
0
10
1
DC
1s
100ms
10ms
1ms
-55°C
+25°C
+100°C
100m
10m
100µs
+150°C
100m
1
10
100
1m
10m
100m
1
10
IC - Collector Current (A)
VCE - Collector Emitter Voltage (V)
VBE(on) v IC
Safe Operating Area
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