ZVP4525G [DIODES]
250V P-CHANNEL ENHANCEMENT MODE MOSFET; 250V P沟道增强型MOSFET
| 型号： | ZVP4525G |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | 250V P-CHANNEL ENHANCEMENT MODE MOSFET |
| 文件： | 总8页 (文件大小：320K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ZVP4525G
250V P-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY
(BR)DSS
V
=-250V; R
=14V; I =-265m A
DS(ON) D
DESCRIPTION
This 250V enhancem ent m ode P-channel MOSFET provides users with a
com petitive specification offering efficient power handling capability, high
im pedance and is free from therm al runaway and therm ally induced
secondary breakdown. Applications benefiting from this device include a
variety of telecom and general high voltage circuits.
SOT89 and SOT23-6 versions are also available.
FEATURES
• High voltage
SOT223
• Low on-resistance
• Fast switching speed
• Low gate drive
• Low threshold
• Com plem entary N-channel type ZVN4525G
• SOT223 package
APPLICATIONS
• Earth recall and dialling switches
• Electronic hook switches
• High voltage power MOSFET drivers
• Telecom call routers
• Solid state relays
ORDERING INFORMATION
DEVICE
REEL S IZE
TAPE WIDTH
QUANTITY
PER REEL
S
ZVP4525GTA
ZVP4525GTC
7”
8m m e m b o s s e d
8m m e m b o s s e d
1000 u n its
4000 u n its
D
G
D
13”
DEVICE MARKING
• ZVP4525G
TOP VIEW
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S E M IC O N D U C T O R S
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ZVP4525G
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
S YMBOL
LIMIT
UNIT
V
V
250
V
DS S
Dra in -s o u rce vo lta g e
Ga te s o u rce vo lta g e
V
40
GS
(a )
(a )
Co n tin u o u s d ra in cu rre n t (V =10V; TA=25°C)
I
I
-265
-212
m A
m A
GS
D
D
(V =10V; TA=70°C)
GS
(c)
I
-1
-0.75
-1
A
A
A
DM
Pu ls e d d ra in cu rre n t
Co n tin u o u s s o u rce cu rre n t (b o d y d io d e )
I
I
S
Pu ls e d s o u rce cu rre n t (b o d y d io d e )
(a )
S M
Po w e r d is s ip a tio n a t T =25°C
A
P
2
W
D
16
m W/°C
Lin e a r d e ra tin g fa cto r
-55 to +150
°C
Op e ra tin g a n d s to ra g e te m p e ra tu re ra n g e
T :T
j s tg
THERMAL RESISTANCE
PARAMETER
S YMBOL
VALUE
63
UNIT
°C/W
°C/W
(a )
J u n ctio n to a m b ie n t
R
R
θJ A
θJ A
(b )
J u n ctio n to a m b ie n t
26
NOTES:
(a) For a device surface m ounted on 25m m x 25m m FR4 PCB with high coverage of single sided 1oz copper, in still air conditions
(b) For a device surface m ounted on FR4 PCB m easured at tр5 secs.
(c) Repetitive rating - pulse width lim ited by m axim um junction tem perature. Refer to Transient Therm al Im pedance graph.
NB High voltage applications
For high voltage applications, the appropriate industry sector guidelines should be considered with regard to
voltage spacing between conductors.
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S E M IC O N D U C T O R S
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ZVP4525G
CHARACTERISTICS
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S E M IC O N D U C T O R S
3
ZVP4525G
ELECTRICAL CHARACTERISTICS (at T
= 25°C unless otherwise stated)
amb
PARAMETER
S YMBOL MIN.
TYP.
MAX. UNIT CONDITIONS
S TATIC
Drain-source breakdown voltage
V
-250
-0.8
80
-285
-30
±1
V
I =-1m A, V =0V
D GS
(BR)DS S
Ze ro g a te vo lta g e d ra in cu rre n t
Ga te -b o d y le a ka g e
I
-500
n A
V
=-250V, V =0V
DS S
DS GS
I
±100 n A
V
= 40V, V =0V
DS
GS S
GS
Ga te -s o u rce th re s h o ld vo lta g e
Static drain-source on-state resistance
V
R
-1.5
-2.0
V
I =-1m A, V = V
DS GS
D
GS (th )
(1)
10
13
14
18
V
V
=-10V, I =-200m A
D
=-3.5V,
Ω
Ω
DS (o n )
GS
GS
I =-100m A
D
(3)
Fo rw a rd tra n s co n d u cta n ce
g
200
m S
V
=-10V,I =-0.15A
D
fs
DS
(3)
DYNAMIC
In p u t ca p a cita n ce
C
C
C
73
p F
p F
p F
is s
V
=-25 V, V =0V,
DS
GS
Output capacitance
12.8
3.91
f=1MHz
o s s
rs s
Re ve rs e tra n s fe r ca p a cita n ce
(2) (3)
S WITCHING
Turn-on delay tim e
Ris e tim e
t
t
t
t
1.53
3.78
17.5
7.85
2.45
0.22
0.45
n s
d (o n )
V
R
=-30V, I =-200m A
D
DD
n s
=50Ω, V =-10V
r
G
GS
(re fe r to te s t circu it)
Turn-off delay tim e
Fa ll tim e
n s
d (o ff)
f
n s
To ta l g a te ch a rg e
Ga te -s o u rce ch a rg e
Ga te d ra in ch a rg e
S OURCE-DRAIN DIODE
Q
Q
Q
3.45
0.31
0.63
n C
n C
n C
g
V
=-25V,V =-10V,
GS
DS
ID=-200m A(re fe r to
te s t circu it)
g s
g d
(1)
Dio d e fo rw a rd vo lta g e
V
0.97
V
T =25°C, I =-200m A,
j S
S D
V
=0V
GS
(3)
Re ve rs e re co ve ry tim e
t
205
21
290
29
n s
T =25°C, I =-200m A,
j F
d i/d t= 100A/µs
rr
(3)
Re ve rs e re co ve ry ch a rg e
Q
n C
rr
NOTES:
(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤ 2%.
(2) Switching characteristics are independent of operating junction tem perature.
(3) For design aid only, not subject to production testing.
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ZVP4525G
TYPICAL CHARACTERISTICS
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S E M IC O N D U C T O R S
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ZVP4525G
CHARACTERISTICS
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S E M IC O N D U C T O R S
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ZVP4525G
TEST CIRCUITS
Current
Regulator
Sam e as
D.U.T
50k
QG
12V
0.2µF
10V
VG
0.3µF
VDS
QGS
QGD
IG
D.U.T
VGS
ID
Charge
Gate Charge Test Circuit
Basic Gate Charge Waveform
RD
VGS
10%
VGS
VDS
RG
Vcc
90%
VDS
Pulse Width < 1µS
-10V
Duty Factor
≤ 0.1%
td(on)
td(off)
tf
tr
Sw itching Tim e Waveform s
Sw itching Tim e Test Circuit
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ZVP4525G
PAD LAYOUT DETAILS
PACKAGE OUTLINE
Controlling dim ensions are in m illim eters. Approxim ate conversions are given in inches
PACKAGE DIMENSIONS
Millim eters
Inches
Millim eters
Min Max
2.30 BSC
4.60 BSC
Inches
Min Max
DIM
DIM
Min
-
Max
Min
Max
0.071
0.004
0.033
0.122
0.013
0.264
A
A1
b
1.80
0.10
0.84
3.10
0.33
6.70
-
e
e1
E
0.0905 BSC
0.181 BSC
0.02
0.66
2.90
0.23
6.30
0.0008
0.026
0.114
0.009
0.248
6.70
7.30
0.264
0.287
b2
C
E1
L
3.30
0.90
-
3.70
0.130
0.355
-
0.146
-
-
-
-
D
-
© Zetex Sem iconductors plc 2004
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ISSUE 4 - J UNE 2004
S E M IC O N D U C T O R S
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