ZVP4525TC [ZETEX]
P-CHANNEL ENHANCEMENT MODE MOSFET; P沟道增强型MOSFET
| 型号： | ZVP4525TC |
| 厂家： | 
ZETEX SEMICONDUCTORS |
| 描述： | P-CHANNEL ENHANCEMENT MODE MOSFET |
| 文件： | 总8页 (文件大小：408K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ZVP4525E6
250V P-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY
(
DESCRIPTION
This 250V enhancement mode P-channel MOSFET provides users with a
competitive specification offering efficient power handling capability, high
impedance and is free from thermal runaway and thermally induced
secondary breakdown. Applications benefiting from this device include a
variety of Telecom and general high voltage circuits.
SOT23-6
SOT89 and SOT223 versions are also available.
FEATURES
•
•
•
•
•
•
•
High voltage
Low on-resistance
Fast switching speed
Low gate drive
Low threshold
Complementary N-channel Type ZVN4525E6
SOT23-6 package
APPLICATIONS
•
•
•
•
•
Earth Recall and dialling switches
Electronic hook switches
High Voltage Power MOSFET Drivers
Telecom call routers
Top View
Solid state relays
ORDERING INFORMATION
DEVICE
REEL SIZE
(inches)
TAPE WIDTH (mm) QUANTITY
PER REEL
ZVP4525TA
ZVP4525TC
7
8mm embossed
8mm embossed
3000 units
13
10000 units
DEVICE MARKING
•
P52
ISSUE 1 - MARCH 2001
1
ZVP4525E6
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VDSS
LIMIT
-250
±40
UNIT
Drain-Source Voltage
Gate Source Voltage
V
V
VGS
Continuous Drain Current (VGS=10V; TA=25°C)(a)
(VGS=10V; TA=70°C)(a)
ID
ID
-197
-157
mA
mA
Pulsed Drain Current (c)
IDM
IS
-1
-0.75
-1
A
A
A
Continuous Source Current (Body Diode)
Pulsed Source Current (Body Diode)
ISM
PD
Power Dissipation at TA=25°C (a)
Linear Derating Factor
1.1
8.8
W
mW/°C
Operating and Storage Temperature Range
Tj:Tstg
-55 to +150
°C
THERMAL RESISTANCE
PARAMETER
SYMBOL
RθJA
VALUE
113
UNIT
°C/W
°C/W
Junction to Ambient (a)
Junction to Ambient (b)
RθJA
68
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper,
in still air conditions
(b) For a device surface mounted on FR4 PCB measured at tр5 secs.
(c) Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal
Impedance graph.
NB High Voltage Applications
For high voltage applications, the appropriate industry sector guidelines should be considered with regard to
voltage spacing between conductors.
ISSUE 1 - MARCH 2001
2
ZVP4525E6
CHARACTERISTICS
ISSUE 1 - MARCH 2001
3
ZVP4525E6
ELECTRICAL CHARACTERISTICS (at T
= 25°C unless otherwise stated).
amb
PARAMETER
SYMBOL MIN.
TYP.
MAX. UNIT CONDITIONS.
STATIC
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
V(BR)DSS -250
-285
-30
1
V
ID=-1mA, VGS=0V
VDS=-250V, VGS=0V
VGS=±40V, VDS=0V
ID=-1mA, VDS= VGS
IDSS
IGSS
VGS(th)
RDS(on)
-500
nA
100 nA
Gate-Source Threshold Voltage
Static Drain-Source On-State Resistance (1)
-0.8
80
-1.5
-2.0
V
10
13
14
18
Ω
Ω
VGS=-10V, ID=-200mA
VGS=-3.5V, ID=-100mA
Forward Transconductance (3)
DYNAMIC (3)
gfs
200
mS
VDS=-10V,ID=-0.15A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING(2) (3)
Turn-On Delay Time
Rise Time
Ciss
Coss
Crss
73
pF
pF
pF
VDS=-25 V, VGS=0V,
f=1MHz
12.8
3.91
td(on)
tr
td(off)
tf
1.53
3.78
17.5
7.85
2.45
.22
ns
ns
ns
ns
nC
nC
nC
VDD =-30V, ID=-200mA
RG=50Ω, VGS=-10V
(refer to test circuit)
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate Drain Charge
SOURCE-DRAIN DIODE
Diode Forward Voltage (1)
Qg
3.45
.31
VDS=-25V,VGS=-10V,
ID=-200mA(refer to
test circuit)
Qgs
Qgd
.45
.63
VSD
0.97
V
Tj=25°C, IS=-200mA,
VGS=0V
Reverse Recovery Time (3)
Reverse Recovery Charge (3)
trr
205
21
290
29
ns
Tj=25°C, IF=-200mA,
di/dt= 100A/µs
Qrr
nC
(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
ISSUE 1 - MARCH 2001
4
ZVP4525E6
TYPICAL CHARACTERISTICS
ISSUE 1 - MARCH 2001
5
ZVP4525E6
CHARACTERISTICS
ISSUE 1 - MARCH 2001
6
ZVP4525E6
TEST CIRCUITS
ISSUE 1 - MARCH 2001
7
ZVP4525E6
PAD LAYOUT DETAILS
PACKAGE DIMENSIONS
b
e
2
L
E1
E
DATUM A
a
e1
D
A
A2
A1
DIM Millimetres
Inches
Min
Min
Max
1.45
0.15
1.30
0.50
0.20
3.00
3.00
1.75
0.60
Max
A
0.90
0.35
0.057
0.006
0.051
0.019
0.008
0.118
0.118
0.069
0.002
A1
A2
b
0.00
0
0.90
0.035
0.014
0.0035
0.110
0.102
0.059
0.004
0.35
C
0.09
D
2.80
E
2.60
E1
L
1.50
0.10
e
0.95 REF
1.90 REF
0°
0.037 REF
0.074 REF
0°
e1
L
10°
10°
Zetex plc.
Fields New Road, Chadderton, Oldham, OL9-8NP, United Kingdom.
Telephone: (44)161 622 4422 (Sales), (44)161 622 4444 (General Enquiries)
Fax: (44)161 622 4420
Zetex GmbH
Zetex Inc.
Zetex (Asia) Ltd.
3701-04 Metroplaza, Tower 1
Hing Fong Road,
Kwai Fong, Hong Kong
Telephone:(852) 26100 611
Fax: (852) 24250 494
These are supported by
agents and distributors in
major countries world-wide
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www.zetex.com
Ths publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for
any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves
the right to alter without notice the specification, design, price or conditions of supply of any product or service.
ISSUE 1 - MARCH 2001
8
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