ZVP4525Z [ZETEX]

250V P-CHANNEL ENHANCEMENT MODE MOSFET; 250V P沟道增强型MOSFET


型号：	ZVP4525Z
厂家：	ZETEX SEMICONDUCTORS
描述：	250V P-CHANNEL ENHANCEMENT MODE MOSFET 250V P沟道增强型MOSFET
文件：	总8页 (文件大小：401K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

ZVP4525Z

250V P-CHANNEL ENHANCEMENT MODE MOSFET

SUMMARY

(

DESCRIPTION

This 250V enhancement mode P-channel MOSFET provides users with a

competitive specification offering efficient power handling capability, high

impedance and is free from thermal runaway and thermally induced

secondary breakdown. Applications benefiting from this device include a

variety of Telecom and general high voltage switching circuits.

SOT89

SOT223 and SOT23-6 versions are also available.

FEATURES

•

High voltage

Low on-resistance

Fast switching speed

Low gate drive

Low threshold

Complementary N-channel Type ZVN4525Z

SOT89 package

APPLICATIONS

•

Earth Recall and dialling switches

Electronic hook switches

High Voltage Power MOSFET Drivers

Telecom call routers

Top View

Solid state relays

ORDERING INFORMATION

DEVICE

REEL SIZE

(inches)

TAPE WIDTH (mm) QUANTITY

PER REEL

ZVP4525ZTA

ZVP4525ZTC

8mm embossed

1000 units

4000 units

DEVICE MARKING

•

P52

ISSUE 1 - MARCH 2001

ZVP4525Z

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

SYMBOL

V_DSS

LIMIT

250

UNIT

Drain-Source Voltage

±40

Gate Source Voltage

V_GS

Continuous Drain Current (V_GS=10V; TA=25°C)(a)

(V_GS=10V; TA=70°C)(a)

I_D

-205

-164

I_DM

I_S

-1

-0.75

-1

Pulsed Drain Current (c)

Continuous Source Current (Body Diode)

Pulsed Source Current (Body Diode)

I_SM

P_D

Power Dissipation at T_A=25°C (a)

Linear Derating Factor

1.2

9.6

mW/°C

-55 to +150

°C

Operating and Storage Temperature Range

^T_j:T_stg

THERMAL RESISTANCE

PARAMETER

SYMBOL

R_θJA

VALUE

103

UNIT

°C/W

Junction to Ambient (a)

Junction to Ambient (b)

R_θJA

NOTES

(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper,

in still air conditions

(b) For a device surface mounted on FR4 PCB measured at tр5 secs.

Impedance graph.

NB High Voltage Applications

For high voltage applications, the appropriate industry sector guidelines should be considered with regard to

voltage spacing between conductors.

ISSUE 1 - MARCH 2001

ZVP4525Z

CHARACTERISTICS

ISSUE 1 - MARCH 2001

ZVP4525Z

ELECTRICAL CHARACTERISTICS (at T

= 25°C unless otherwise stated).

amb

PARAMETER

SYMBOL MIN.

TYP.

MAX. UNIT CONDITIONS.

STATIC

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate-Body Leakage

V_(BR)DSS-250

-285

-30

I_D=-1mA, V_GS=0V

I_DSS

I_GSS

V_GS(th)

R_DS(on)

-500

V_DS=-250V, V_GS=0V

100 nA

_GS=±40V, V_DS=0V

Gate-Source Threshold Voltage

Static Drain-Source On-State Resistance (1)

-0.8

-1.5

-2.0

I_D=-1mA, V_DS= V_GS

_GS=-10V, I_D=-200mA

_GS=-3.5V, I_D=-100mA

Ω

Forward Transconductance (3)

DYNAMIC (3)

g_fs

200

V_DS=-10V,I_D=-0.15A

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

SWITCHING(2) (3)

Turn-On Delay Time

Rise Time

C_iss

C_oss

C_rss

_DS=-25 V, V_GS=0V,

12.8

3.91

f=1MHz

t_d(on)

t_r

t_d(off)

t_f

1.53

3.78

17.5

7.85

2.45

0.22

0.45

_DD=-30V, I_D=-200mA

R_G=50Ω, V_GS=-10V

(refer to test circuit)

Turn-Off Delay Time

Fall Time

Total Gate Charge

Gate-Source Charge

Gate Drain Charge

SOURCE-DRAIN DIODE

Diode Forward Voltage (1)

Q_g

3.45

0.31

0.63

_DS=-25V,V_GS=-10V,

Q_gs

Q_gd

I_D=-200mA(refer to

test circuit)

V_SD

0.97

T_j=25°C, I_S=-200mA,

_GS=0V

Reverse Recovery Time (3)

Reverse Recovery Charge (3)

t_rr

205

290

T_j=25°C, I_F=-200mA,

di/dt=100A/µs

Q_rr

(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤ 2% .

(2) Switching characteristics are independent of operating junction temperature.

(3) For design aid only, not subject to production testing.

ISSUE 1 - MARCH 2001

ZVP4525Z

TYPICAL CHARACTERISTICS

ISSUE 1 - MARCH 2001

ZVP4525Z

CHARACTERISTICS

ISSUE 1 - MARCH 2001

ZVP4525Z

TEST CIRCUITS

ISSUE 1 - MARCH 2001

ZVP4525Z

PAD LAYOUT DETAILS

PACKAGE DIMENSIONS

DIM Millimetres

Min

Inches

Min

2.4

Max

4.60

4.25

1.60

2.60

0.45

0.55

1.80

2.85

3.10

1.60

Max

4.40

3.75

1.40

0.173

0.150

0.550

0.181

0.167

0.630

0.102

0.018

0.022

0.072

0.112

0.122

0.063

4.0

1.5

0.28

0.38

1.50

2.60

2.90

1.40

0.011

0.015

0.060

0.102

0.114

0.055

1.2

1.0

3.2

1.2

SOT89 pattern.

Minimum Pad Size (dimensions in mm)

D B

Zetex plc.

Fields New Road, Chadderton, Oldham, OL9-8NP, United Kingdom.

Telephone: (44)161 622 4422 (Sales), (44)161 622 4444 (General Enquiries)

Fax: (44)161 622 4420

Zetex GmbH

Zetex Inc.

Zetex (Asia) Ltd.

3701-04 Metroplaza, Tower 1

Hing Fong Road,

Kwai Fong, Hong Kong

Telephone:(852) 26100 611

Fax: (852) 24250 494

These are supported by

agents and distributors in

major countries world-wide

Streitfeldstraße 19

D-81673 München

Germany

Telefon: (49) 89 45 49 49 0

Fax: (49) 89 45 49 49 49

47 Mall Drive, Unit 4

Commack NY 11725

USA

Telephone: (631) 543-7100

Fax: (631) 864-7630

www.zetex.com

Ths publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for

any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves

the right to alter without notice the specification, design, price or conditions of supply of any product or service.

ISSUE 1 - MARCH 2001