ZXMD63P02X [DIODES]

DUAL 20V P-CHANNEL ENHANCEMENT MODE MOSFET; 双路20V P沟道增强型MOSFET
ZXMD63P02X
型号: ZXMD63P02X
厂家: DIODES INCORPORATED    DIODES INCORPORATED
描述:

DUAL 20V P-CHANNEL ENHANCEMENT MODE MOSFET
双路20V P沟道增强型MOSFET

晶体 小信号场效应晶体管 开关 光电二极管
文件: 总7页 (文件大小:202K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
ZXMD63P02X  
DUAL 20V P-CHANNEL ENHANCEMENT MODE MOSFET  
SUMMARY  
V(BR)DSS=-20V; RDS(ON)=0.27; ID=-1.7A  
DESCRIPTION  
This new generation of high density MOSFETs from Zetex utilises a unique  
structure that combines the benefits of low on-resistance with fast switching  
speed. This makes them ideal for high efficiency, low voltage, power  
management applications.  
MSOP8  
FEATURES  
Low on-resistance  
Fast switching speed  
Low threshold  
Low gate drive  
Low profile SOIC package  
APPLICATIONS  
DC - DC Converters  
Power Management Functions  
Disconnect switches  
Motor control  
ORDERING INFORMATION  
DEVICE  
REEL SIZE  
(inches)  
TAPE WIDTH (mm)  
QUANTITY  
PER REEL  
ZXMD63P02XTA  
ZXMD63P02XTC  
7
12mm embossed  
12mm embossed  
1000 units  
4000 units  
Top View  
13  
DEVICE MARKING  
ZXM63P02  
ISSUE 1 - JUNE 2004  
1
ZXMD63P02X  
ABSOLUTE MAXIMUM RATINGS.  
PARAMETER  
SYMBOL  
VDSS  
LIMIT  
-20  
UNIT  
Drain-Source Voltage  
Gate- Source Voltage  
V
V
A
VGS  
± 12  
Continuous Drain Current (VGS=4.5V; TA=25°C)(b)(d) ID  
(VGS=4.5V; TA=70°C)(b)(d)  
-1.7  
-1.35  
Pulsed Drain Current (c)(d)  
IDM  
-9.6  
-1.4  
-9.6  
A
A
A
Continuous Source Current (Body Diode)(b)(d)  
Pulsed Source Current (Body Diode)(c)(d)  
IS  
ISM  
PD  
Power Dissipation at TA=25°C (a)(d)  
Linear Derating Factor  
0.87  
6.9  
W
mW/°C  
Power Dissipation at TA=25°C (a)(e)  
Linear Derating Factor  
PD  
1.04  
8.3  
W
mW/°C  
Power Dissipation at TA=25°C (b)(d)  
Linear Derating Factor  
PD  
1.25  
10  
W
mW/°C  
Operating and Storage Temperature Range  
Tj:Tstg  
-55 to +150  
°C  
THERMAL RESISTANCE  
PARAMETER  
SYMBOL  
RθJA  
VALUE  
143  
UNIT  
°C/W  
°C/W  
°C/W  
Junction to Ambient (a)(d)  
Junction to Ambient (b)(d)  
Junction to Ambient (a)(e)  
RθJA  
100  
RθJA  
120  
NOTES  
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper,  
in still air conditions  
(b) For a device surface mounted on FR4 PCB measured at tр10 secs.  
(c) Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal  
Impedance graph.  
(d) For device with one active die.  
(e) For device with two active die running at equal power.  
ISSUE 1 - JUNE 2004  
2
ZXMD63P02X  
CHARACTERISTICS  
100  
10  
1
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
Refer Note (a)  
Refer Note (b)  
Refer Note (a)  
DC  
1s  
100ms  
10ms  
1ms  
100µs  
0.1  
0
0.1  
1
10  
100  
0
20  
40  
60  
80 100 120 140 160  
V
- Drain-Source Voltage (V)  
T - Temperature (°)  
DS  
Safe Operating Area  
Derating Curve  
120  
100  
80  
60  
40  
20  
0
160  
140  
120  
100  
80  
Refer Note (b)  
Refer Note (a)  
D=0.5  
D=0.5  
60  
40  
D=0.2  
D=0.2  
D=0.1  
D=0.05  
20  
D=0.1  
D=0.05  
Single Pulse  
Single Pulse  
0
0.0001 0.001  
0.01  
0.1  
1
10  
100  
0.0001 0.001 0.01  
0.1  
1
10  
100 1000  
Pulse Width (s)  
Pulse Width (s)  
Transient Thermal Impedance  
Transient Thermal Impedance  
ISSUE 1 - JUNE 2004  
3
ZXMD63P02X  
ELECTRICAL CHARACTERISTICS (at T  
= 25°C unless otherwise stated).  
amb  
PARAMETER  
SYMBOL MIN.  
TYP.  
MAX.  
UNIT CONDITIONS.  
STATIC  
Drain-Source Breakdown Voltage  
Zero Gate Voltage Drain Current  
Gate-Body Leakage  
V(BR)DSS -20  
IDSS  
V
ID=-250µA, VGS=0V  
VDS=-20V, VGS=0V  
VGS=± 12V, VDS=0V  
-1  
µA  
nA  
V
IGSS  
±100  
Gate-Source Threshold Voltage  
VGS(th)  
RDS(on)  
gfs  
-0.7  
1.3  
ID=-250µA, VDS  
=
VGS  
Static Drain-Source On-State Resistance  
(1)  
0.27  
0.40  
VGS=-4.5V, ID=-1.2A  
VGS=-2.7V, ID=-0.6A  
Forward Transconductance (3)  
DYNAMIC (3)  
S
VDS=-10V,ID=-0.6A  
Input Capacitance  
Output Capacitance  
Reverse Transfer Capacitance  
SWITCHING(2) (3)  
Turn-On Delay Time  
Rise Time  
Ciss  
Coss  
Crss  
290  
120  
50  
pF  
pF  
pF  
VDS=-15 V, VGS=0V,  
f=1MHz  
td(on)  
tr  
td(off)  
tf  
3.4  
ns  
ns  
ns  
ns  
nC  
nC  
nC  
9.6  
V
DD =-10V, ID=-1.2A  
RG=6.0, RD=8.3Ω  
(Refer to test  
circuit)  
Turn-Off Delay Time  
Fall Time  
16.4  
20.4  
Total Gate Charge  
Gate-Source Charge  
Gate Drain Charge  
Qg  
5.25  
1.0  
VDS=-16V,VGS=-4.5V,  
ID=-1.2A  
(Refer to test  
circuit)  
Qgs  
Qgd  
2.25  
SOURCE-DRAIN DIODE  
Diode Forward Voltage (1)  
VSD  
-0.95  
V
Tj=25°C, IS=-1.2A,  
VGS=0V  
Reverse Recovery Time (3)  
Reverse Recovery Charge(3)  
trr  
21.7  
9.6  
ns  
Tj=25°C, IF=-1.2A,  
di/dt= 100A/µs  
Qrr  
nC  
(1) Measured under pulsed conditions. Width=300µs. Duty cycle 2% .  
(2) Switching characteristics are independent of operating junction temperature.  
(3) For design aid only, not subject to production testing.  
ISSUE 1 - JUNE 2004  
4
ZXMD63P02X  
TYPICAL CHARACTERISTICS  
10  
10  
3.5V  
3V  
5V  
4.5V  
4V  
5V  
4.5V  
4V  
3.5V  
3V  
+25 C  
+150°C  
2.5V  
2.5V  
-VGS  
-VGS  
2V  
2V  
1
1
0.1  
0.1  
0.1  
1
10  
100  
0.1  
1
10  
100  
-VDS - Drain-Source Voltage (V)  
-VDS - Drain-Source Voltage (V)  
Output Characteristics  
Output Characteristics  
10  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
VDS=-10V  
RDS(on)  
VGS=-4.5V  
ID=-1.2A  
T=150 C  
T=25 C  
1
VGS=VDS  
ID=-250uA  
VGS(th)  
0.1  
1
1.5  
2
2.5  
3
3.5  
4
4.5  
-100  
-50  
0
50  
100  
150  
200  
-VGS - Gate-Source Voltage (V)  
Tj - Junction Temperature (°C)  
Typical Transfer Characteristics  
Normalised R  
and V  
GS(th)  
DS(on)  
v Temperature  
10  
10  
1
1
T=150°C  
T=25°C  
0.1  
VGS=-3V  
VGS=-5V  
0.1  
0.01  
0.1  
1
10  
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
-ID - Drain Current (A)  
-VSD - Source-Drain Voltage (V)  
On-Resistance v Drain Current  
Source-Drain Diode Forward Voltage  
ISSUE 1 - JUNE 2004  
5
ZXMD63P02X  
TYPICAL CHARACTERISTICS  
700  
600  
500  
400  
300  
200  
100  
0
5
Vgs=0V  
f=1Mhz  
ID=-1.2A  
4.5  
4
3.5  
3
VDS=-16V  
Ciss  
Coss  
Crss  
2.5  
2
1.5  
1
0.5  
0
0.1  
1
10  
100  
0
0.5  
1
1.5  
2
2.5  
3
3.5  
4
4.5  
-VDS - Drain Source Voltage (V)  
Q -Charge (nC)  
Capacitance v Drain-Source Voltage  
Gate-Source Voltage v Gate Charge  
Gate Charge Test Circuit  
Basic Gate Charge Waveform  
Switching Time Waveforms  
Switching Time Test Circuit  
ISSUE 1 - JUNE 2004  
6
ZXMD63P02X  
PACKAGE DIMENSIONS  
DIM  
Millimetres  
Inches  
MIN  
D
MIN  
MAX  
MAX  
0.043  
0.006  
0.016  
0.009  
0.122  
BSC  
A
A1  
B
1.10  
0.15  
0.40  
0.23  
3.10  
BSC  
3.10  
BSC  
0.70  
6°  
8
1
7
2
6
3
5
4
0.05  
0.25  
0.13  
2.90  
0.65  
2.90  
4.90  
0.40  
0°  
0.002  
0.010  
0.005  
0.114  
0.0256  
0.114  
0.193  
0.016  
0°  
C
e X 6  
D
e
θ°  
E
0.122  
BSC  
L
B
C
H
L
0.028  
6°  
Conforms to JEDEC MO-187 Iss A  
q°  
PAD LAYOUT DETAILS  
Zetex plc.  
Fields New Road, Chadderton, Oldham, OL9-8NP, United Kingdom.  
Telephone: (44)161 622 4422 (Sales), (44)161 622 4444 (General Enquiries)  
Fax: (44)161 622 4420  
Zetex GmbH  
Zetex Inc.  
Zetex (Asia) Ltd.  
These are supported by  
Streitfeldstraße 19  
D-81673 München  
Germany  
Telefon: (49) 89 45 49 49 0  
Fax: (49) 89 45 49 49 49  
47 Mall Drive, Unit 4  
Commack NY 11725  
USA  
Telephone: (516) 543-7100  
Fax: (516) 864-7630  
3510 Metroplaza, Tower 2  
Hing Fong Road,  
Kwai Fong, Hong Kong  
Telephone:(852) 26100 611  
Fax: (852) 24250 494  
agents and distributors in  
major countries world-wide  
Zetex plc 1999  
Internet:http://www.zetex.com  
This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any  
purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the  
right to alter without notice the specification, design, price or conditions of supply of any product or service.  
ISSUE 1 - JUNE 2004  
7

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