ZXMHC10A07T8TC [DIODES]
COMPLEMENTARY 100V ENHANCEMENT MODE MOSFET H-BRIDGE; 互补100V增强型MOSFET H桥
| 型号： | ZXMHC10A07T8TC |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | COMPLEMENTARY 100V ENHANCEMENT MODE MOSFET H-BRIDGE |
| 文件： | 总10页 (文件大小：284K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ZXMHC10A07T8
COMPLEMENTARY 100V ENHANCEMENT MODE MOSFET H-BRIDGE
SUMMARY
N-Channel = V(BR)DSS = 100V : RDS(on) = 0.7 ; ID = 1.4A
P-Channel = V(BR)DSS = -100V : RDS(on) = 1.0 ; ID = -1.3A
DESCRIPTION
This new generation of trench MOSFETs from Zetex utilizes a unique structure that
combines the benefits of low on-resistance with fast switching speed. This makes
them ideal for high efficiency, low voltage, power management applications.
SM8
FEATURES
S
S
4
1
• Low on-resistance
G
G
1
4
3
• Fast switching speed
• Low threshold
• Low gate drive
D , D
D , D
3 4
1
2
• Single SM-8 Surface Mount Package
APPLICATIONS
G
G
2
• Single Phase DC Fan Motor Drive
S
S
3
2
PINOUT
ORDERING INFORMATION
DEVICE
REEL
SIZE
TAPE
WIDTH
QUANTITY
PER REEL
ZXMHC10A07T8TA
7”
12m m
12m m
1000 units
4000 units
ZXMHC10A07T8TC
13”
DEVICE MARKING
• ZXMH
C10A7
ISSUE 2 - J UNE 2005
1
S E M IC O N D U C T O R S
ZXMHC10A07T8
ABSOLUTE MAXIMUM RATINGS
PARAMETER
S YMBOL
N-channel
100
P-channel
-100
Ϯ20
-0.9
UNIT
Dra in -S o u rce Vo lta g e
Ga te -S o u rce Vo lta g e
V
V
I
V
DS S
GS
Ϯ20
1.1
V
(b ) (d )
Continuous Drain Current
A
@ V =10V; T =25°C
D
GS
A
(b ) (d )
(a ) (d )
@ V =10V; T =70°C
0.9
-0.8
A
GS
A
@ V =10V; T =25°C
GS
A
1.0
-0.8
A
(c)
Pu ls e d Dra in Cu rre n t
I
I
I
5.2
-4.5
A
A
DM
(b )
Co n tin u o u s S o u rce Cu rre n t (Bo d y Dio d e )
2.3
-2.2
S
(c)
Pu ls e d S o u rce Cu rre n t (Bo d y Dio d e )
5.2
-4.5
A
S M
(a ) (d )
Po w e r Dis s ip a tio n a t T =25°C
A
P
1.3
W
D
Lin e a r De ra tin g Fa cto r
10.4
1.3
m W/°C
W
(b ) (d )
Po w e r Dis s ip a tio n a t T =25°C
A
P
D
Lin e a r De ra tin g Fa cto r
10.4
m W/°C
°C
Op e ra tin g a n d S to ra g e Te m p e ra tu re Ra n g e
T , T
-55 to +150
j
s tg
THERMAL RESISTANCE
PARAMETER
S YMBOL
VALUE
94.5
UNIT
(a ) (d )
J u n ctio n to Am b ie n t
R
R
°C/W
°C/W
⍜J A
⍜J A
(b ) (d )
J u n ctio n to Am b ie n t
73.3
NOTES
(a) For a device surface m ounted on 50m m x 50m m x 1.6m m FR4 PCB with high coverage of single sided 2oz copper, in still air conditions, with
the heat sink split into two equal areas one for each drain connection.
(b) For a device surface m ounted on FR4 PCB m easured at t Յ 10 sec.
(c) Repetitive rating on 50m m x 50m m x 1.6m m FR4 PCB, D= 0.02, pulse width = 300s - pulse width lim ited by m axim um junction tem perature.
Refer to transiennt therm al im pedance graph.
(d) For device with one active die.
ISSUE 2 - J UNE 2005
2
S E M IC O N D U C T O R S
ZXMHC10A07T8
TYPICAL CHARACTERISTICS
ISSUE 2 - J UNE 2005
3
S E M IC O N D U C T O R S
ZXMHC10A07T8
N-Channel
ELECTRICAL CHARACTERISTICS (at Tam b = 25°C unless otherwise stated)
PARAMETER
S YMBOL
MIN.
TYP. MAX. UNIT CONDITIONS
S TATIC
Dra in -S o u rce Bre a kd o w n Vo lta g e
Ze ro Ga te Vo lta g e Dra in Cu rre n t
Ga te -Bo d y Le a ka g e
V
100
V
A
nA
V
I = 250A, V =0V
D GS
(BR)DS S
I
I
1
V
=100V, V =0V
GS
DS S
DS
GS
100
4.0
0.7
0.9
V
=±20V, V =0V
DS
GS S
Ga te -S o u rce Th re s h o ld Vo lta g e
S ta tic Dra in -S o u rce On -S ta te
V
R
2.0
I = 250A, V =V
D DS GS
GS (th )
DS (o n )
⍀
V
= 10V, I = 1.5A
D
GS
GS
DS
(1)
Re s is ta n ce
⍀
V
V
= 6V, I = 1.0A
D
(1) (3)
Fo rw a rd Tra n s co n d u cta n ce
g
1.6
S
= 15V, I = 1.0A
D
fs
(3)
DYNAMIC
In p u t Ca p a cita n ce
C
C
C
138
12
6
pF
pF
pF
is s
V
= 60V, V =0V
GS
DS
Ou tp u t Ca p a cita n ce
o s s
rs s
f=1MHz
Re ve rs e Tra n s fe r Ca p a cita n ce
(2) (3)
S WITCHING
Tu rn -On -De la y Tim e
Ris e Tim e
t
t
t
t
1.8
1.5
4.1
2.1
2.9
0.7
1.0
ns
ns
d (o n )
V
R
= 50V, I = 1.0A
D
DD
r
≅ 6.0⍀, V = 10V
Tu rn -Off De la y Tim e
Fa ll Tim e
ns
G
GS
d (o ff)
f
ns
To ta l Ga te Ch a rg e
Ga te -S o u rce Ch a rg e
Ga te Dra in Ch a rg e
S OURCE-DRAIN DIODE
Q
Q
Q
nC
nC
nC
g
V
= 50V, V = 10V
GS
DS
g s
g d
I = 1.0A
D
(1)
Dio d e Fo rw a rd Vo lta g e
V
t
0.95
V
T =25°C, I = 1.5A,
j S
S D
V
=0V
GS
(3)
Re ve rs e Re co ve ry Tim e
27
12
ns
T =25°C, I = 1.8A,
rr
j
S
(3)
d i/d t=100A/s
Re ve rs e Re co ve ry Ch a rg e
Q
nC
rr
NOTES
(1) Measured under pulsed conditions. Pulse width Յ 300s; duty cycle Յ 2%.
(2) Switching characteristics are independent of operating junction tem perature.
(3) For design aid only, not subject to production testing.
ISSUE 2 - J UNE 2005
4
S E M IC O N D U C T O R S
ZXMHC10A07T8
P-Channel
ELECTRICAL CHARACTERISTICS (at Tam b = 25°C unless otherwise stated)
PARAMETER
S YMBOL
MIN.
TYP. MAX. UNIT CONDITIONS
S TATIC
Dra in -S o u rce Bre a kd o w n Vo lta g e
Ze ro Ga te Vo lta g e Dra in Cu rre n t
Ga te -Bo d y Le a ka g e
V
-100
V
A
nA
V
I = -250A, V =0V
D GS
(BR)DS S
I
I
-1.0
100
-4.0
1
V
= -100V, V =0V
GS
DS S
DS
GS
V
=±20V, V =0V
DS
GS S
Ga te -S o u rce Th re s h o ld Vo lta g e
S ta tic Dra in -S o u rce On -S ta te
V
R
-2.0
I = -250A, V =V
D DS GS
GS (th )
DS (o n )
⍀
V
= -10V, I = - 0.6A
D
GS
GS
DS
(1)
Re s is ta n ce
1.45
⍀
V
V
= -6V, I = -0.5A
D
(1) (3)
Fo rw a rd Tra n s co n d u cta n ce
g
1.2
S
= -15V, I = -0.6A
D
fs
(3)
DYNAMIC
In p u t Ca p a cita n ce
C
C
C
141
pF
pF
pF
is s
V
= -50V, V =0V
GS
DS
Ou tp u t Ca p a cita n ce
13.1
10.8
o s s
rs s
f=1MHz
Re ve rs e Tra n s fe r Ca p a cita n ce
(2) (3)
S WITCHING
Tu rn -On -De la y Tim e
Ris e Tim e
t
t
t
t
1.6
2.1
5.9
3.3
1.6
ns
ns
ns
ns
nC
d (o n )
V
R
= -50V, I = -1A
D
DD
r
≅ 6.0⍀, V = -10V
Tu rn -Off De la y Tim e
Fa ll Tim e
G
GS
d (o ff)
f
Ga te Ch a rg e
Q
V
= -50V, V = -5V
g
DS GS
I = -0.6A
D
To ta l Ga te Ch a rg e
Q
Q
Q
3.5
0.6
1.6
nC
nC
nC
g
V
= -50V, V = -10V
GS
DS
Ga te -S o u rce Ch a rg e
Ga te Dra in Ch a rg e
S OURCE-DRAIN DIODE
g s
g d
I = -0.6A
D
(1)
Dio d e Fo rw a rd Vo lta g e
V
t
-0.85
-0.95
V
T =25°C, I = -0.75A,
j S
S D
V
=0V
GS
(3)
Re ve rs e Re co ve ry Tim e
29
31
ns
T =25°C, I = -0.9A,
rr
j
S
(3)
d i/d t=100A/s
Re ve rs e Re co ve ry Ch a rg e
Q
nC
rr
NOTES
(1) Measured under pulsed conditions. Pulse width Յ 300s; duty cycle Յ 2%.
(2) Switching characteristics are independent of operating junction tem perature.
(3) For design aid only, not subject to production testing.
ISSUE 2 - J UNE 2005
5
S E M IC O N D U C T O R S
ZXMHC10A07T8
N-CHANNEL TYPICAL CHARACTERISTICS
ISSUE 2 - J UNE 2005
6
S E M IC O N D U C T O R S
ZXMHC10A07T8
N-CHANNEL TYPICAL CHARACTERISTICS
ISSUE 2 - J UNE 2005
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S E M IC O N D U C T O R S
ZXMHC10A07T8
P-CHANNEL TYPICAL CHARACTERISTICS
ISSUE 2 - J UNE 2005
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S E M IC O N D U C T O R S
ZXMHC10A07T8
P-CHANNEL TYPICAL CHARACTERISTICS
ISSUE 2 - J UNE 2005
9
S E M IC O N D U C T O R S
ZXMHC10A07T8
PACKAGE DIMENSIONS
PACKAGE OUTLINE
DIM
Millim etres
Inches
MIN TYP MAX MIN
TYP MAX
A
–
0.02
–
–
–
1.7
–
–
0.067
0.004
–
A1
b
0.1 0.0008
–
0.7
–
–
–
0.028
c
0.24
6.3
3.3
–
0.32 0.009
–
0.013
0.264
0.145
–
D
–
6.7
3.7
–
0.248
–
E
–
0.130
–
0.180
0.060
–
e 1
e 2
He
Lp
α
4.59
1.53
–
–
–
–
–
0.264
0.035
–
–
6.7
0.9
–
7.3
–
0.287
–
–
–
–
15°
–
–
15°
–
β
–
10°
–
10°
Controlling dim ensions are in m illim etres. Approxim ate conversions are given in inches
© Zetex Sem iconductors plc 2005
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ISSUE 2 - J UNE 2005
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S E M IC O N D U C T O R S
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