ZXTP2014ZTA [DIODES]
140V PNP LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89; 140V PNP低饱和中功率晶体管SOT89
| 型号： | ZXTP2014ZTA |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | 140V PNP LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 |
| 文件： | 总6页 (文件大小：109K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ZXTP2014Z
140V PNP LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89
SUMMARY
BVCEO = -140V : RSAT = 85m ; IC = -3A
DESCRIPTION
Packaged in the SOT89 outline this new low saturation 140V PNP transistor
offers low on state losses making it ideal for use in DC-DC circuits, line
switching and various driving and power management functions.
FEATURES
• 3 amps continuous current
SOT89
• Up to 10 amps peak current
• Very low saturation voltages
APPLICATIONS
• Motor driving
• Line switching
• High side switches
• Subscriber line interface cards (SLIC)
ORDERING INFORMATION
DEVICE
REEL
SIZE
QUANTITY PER
REEL
TAPE WIDTH
7"
12mm
embossed
1,000 units
ZXTP2014ZTA
PINOUT
DEVICE MARKING
955
TOP VIEW
ISSUE 2 - AUGUST 2005
SEMICONDUCTORS
1
ZXTP2014Z
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
LIMIT
-180
-140
-7
UNIT
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
BV
BV
BV
V
V
V
A
A
CBO
CEO
EBO
(a)
Continuous collector current
I
I
-3
C
Peak pulse current
(a)
-10
CM
Power dissipation at T =25°C
A
P
1.5
12
W
D
Linear derating factor
mW/°C
(b)
Power dissipation at T =25°C
A
P
2.1
W
D
Linear derating factor
16.8
mW/°C
Operating and storage temperature range
T , T
-55 to 150
°C
j
stg
THERMAL RESISTANCE
PARAMETER
SYMBOL
LIMIT
83
UNIT
°C/W
°C/W
(a)
Junction to ambient
R
R
JA
JA
(b)
Junction to ambient
60
NOTES:
(a) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
(b)For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
ISSUE 2 - AUGUST 2005
SEMICONDUCTORS
2
ZXTP2014Z
CHARACTERISTICS
ISSUE 2 - AUGUST 2005
SEMICONDUCTORS
3
ZXTP2014Z
ELECTRICAL CHARACTERISTICS (at T
= 25°C unless otherwise stated)
amb
SYMBOL
PARAMETER
MIN.
-180
-180
-140
-7.0
TYP. MAX. UNIT CONDITIONS
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
BV
BV
BV
BV
-200
-200
-160
-8.0
Ͻ1
V
I
I
I
I
= -100A
CBO
CER
CEO
EBO
C
C
C
E
V
= -1A, RB Յ 1k⍀
= -10mA*
V
V
= -100A
I
-20
-0.5
-20
nA
A
nA
A
nA
mV
mV
mV
mV
V
V
V
V
V
= -150V
= -150V, T
= -150V
= -150V, T
= -6V
CBO
CB
CB
CB
CB
EB
=100ЊC
=100ЊC
amb
amb
Collector cut-off current
I
Ͻ1
CER
RՅ1k⍀
-0.5
-10
Emitter cut-off current
I
Ͻ1
-37
EBO
Collector-emitter saturation voltage
V
-60
I
I
I
I
I
I
I
I
I
I
I
= -0.1A, I = -5mA*
B
CE(SAT)
C
C
C
C
C
C
C
C
C
C
C
-50
-75
= -0.5A, I = -50mA*
B
= -1A, I = -100mA*
B
-80
-115
-330
= -3A, I = -300mA*
B
-255
Base-emitter saturation voltage
Base-emitter turn on voltage
V
V
h
-910 -1010 mV
= -3A, I = -300mA*
B
BE(SAT)
BE(ON)
FE
-800
225
200
100
5
-900
mV
= -3A, V = -5V*
CE
Static forward current transfer ratio
100
100
45
= -10mA, V = -5V*
CE
300
= -1A, V = -5V*
CE
= -3A, V = -5V*
CE
= -10A, V = -5V*
CE
Transition frequency
f
120
MHz
= -100mA, V = -10V
CE
T
f=50MHz
V = -10V, f= 1MHz*
CB
Output capacitance
Switching times
C
33
42
pF
ns
OBO
t
t
I
I
= -1A, V
= -50V,
CC
ON
C
636
= -I = -100mA
B2
OFF
B1
* Measured under pulsed conditions. Pulse width Յ 300s; duty cycle Յ 2%.
ISSUE 2 - AUGUST 2005
SEMICONDUCTORS
4
ZXTP2014Z
TYPICAL CHARACTERISTICS
ISSUE 2 - AUGUST 2005
SEMICONDUCTORS
5
ZXTP2014Z
PACKAGE OUTLINE
PACKAGE DIMENSIONS
Millimeters
DIM
Inches
Millimeters
Inches
Min
DIM
Min
1.40
0.38
-
Max
1.60
0.48
0.53
1.80
0.44
4.60
Min
Max
0.630
0.019
0.021
0.071
0.017
0.181
Min
1.40
3.75
-
Max
1.50
4.25
2.60
3.00
2.85
-
Max
0.059
0.167
0.102
0.118
0.112
-
A
b
0.550
0.015
-
e
E
0.055
0.150
-
b1
b2
c
E1
G
H
-
1.50
0.28
4.40
0.060
0.011
0.173
2.90
2.60
-
0.114
0.102
-
D
© Zetex Semiconductors plc 2005
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For the latest product information, log on to www.zetex.com
ISSUE 2 - AUGUST 2005
SEMICONDUCTORS
6
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