MMBTA56 [DIOTEC]
General Purpose Si-Epitaxial PlanarTransistors; 通用硅外延PlanarTransistors
| 型号： | MMBTA56 |
| 厂家： | 
DIOTEC SEMICONDUCTOR |
| 描述： | General Purpose Si-Epitaxial PlanarTransistors |
| 文件： | 总2页 (文件大小：108K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MMBTA55 ... MMBTA56
MMBTA55 ... MMBTA56
General Purpose Si-Epitaxial PlanarTransistors
Si-Epitaxial Planar-Transistoren für universellen Einsatz
PNP
PNP
Version 2006-08-09
Power dissipation – Verlustleistung
250 mW
2.9±0.1
1.1
Plastic case
Kunststoffgehäuse
SOT-23
(TO-236)
0.4
3
Type
Code
Weight approx. – Gewicht ca.
0.01 g
2
1
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
1.9
Standard packaging taped and reeled
Standard Lieferform gegurtet auf Rolle
Dimensions - Maße [mm]
1 = B 2 = E 3 = C
Maximum ratings (TA = 25°C)
Grenzwerte (TA = 25°C)
MMBTA55
MMBTA56
80 V
Collector-Emitter-volt. – Kollektor-Emitter-Spannung
Collector-Base-voltage – Kollektor-Basis-Spannung
Emitter-Base-voltage – Emitter-Basis-Spannung
Power dissipation – Verlustleistung
B open
E open
C open
- VCEO
- VCBO
- VEBO
Ptot
60 V
60 V
80 V
4 V
250 mW 1)
500 mA
100 mA
200 mA
Collector current – Kollektorstrom (dc)
Base current – Basisstrom
- IC
- IB
Peak Base current – Basis-Spitzenstrom
- IBM
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
Tj
TS
-55...+150°C
-55…+150°C
Characteristics (Tj = 25°C)
Kennwerte (Tj = 25°C)
Min.
Typ.
Max.
DC current gain – Kollektor-Basis-Stromverhältnis 2)
- IC = 10 mA, - VCE = 1 V
- IC = 100 mA, - VCE = 1 V
hFE
hFE
100
100
–
–
–
–
Collector-Emitter saturation voltage – Kollektor-Emitter-Sättigungsspg. 2)
- IC = 100 mA, - IB = 10 mA
- VCEsat
–
–
–
–
0.25 V
1.2 V
Base-Emitter voltage – Basis-Emitter-Spannung
- IC = 100 mA, - VCE = 1 V
- VBE
1
Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss
2
Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2%
© Diotec Semiconductor AG
http://www.diotec.com/
1
MMBTA55 ... MMBTA56
Characteristics (Tj = 25°C)
Kennwerte (Tj = 25°C)
Min.
Typ.
Max.
Collector-Base cutoff current – Kollektor-Basis-Reststrom
- VCB = 60 V, (E open)
- VCB = 80 V, (E open)
MMBTA55
MMBTA56
- ICBO
- ICBO
–
–
–
–
100 nA
100 nA
Emitter-Base cutoff current – Emitter-Basis-Reststrom
- VEB = 4 V, (C open)
- IEB0
–
–
100 nA
–
Gain-Bandwidth Product – Transitfrequenz
- IC = 100 mA, - VCE = 1 V, f = 100 MHz
fT
50 MHz
–
Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht – umgebende Luft
RthA
< 420 K/W 1)
Recommended complementary NPN transistors
Empfohlene komplementäre NPN-Transistoren
MMBTA05, MMBTA06
Marking - Stempelung
MMBTA55 = 2H
MMBTA56 = 2G(M)
120
[%]
100
80
60
40
20
Ptot
0
0
TA
100
150
50
[°C]
Power dissipation versus ambient temperature 1)
Verlustleistung in Abh. von d. Umgebungstemp.1)
1
Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss
2
http://www.diotec.com/
© Diotec Semiconductor AG
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