MMFTN123 [DIOTEC]

N-Channel Logic Level Enhancement Mode Field Effect Transistor; N沟道逻辑电平增强模式场效应晶体管


型号：	MMFTN123
厂家：	DIOTEC SEMICONDUCTOR
描述：	N-Channel Logic Level Enhancement Mode Field Effect Transistor N沟道逻辑电平增强模式场效应晶体管晶体晶体管场效应晶体管
文件：	总2页 (文件大小：109K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

MMFTN123

N-Channel Logic Level Enhancement Mode Field Effect Transistor

N-Kanal Logikpegel Feldeffekt-Transistor – Anreicherungstyp

Version 2011-01-24

Power dissipation – Verlustleistung

360 mW

2.9^±0.1

1.1

Plastic case

Kunststoffgehäuse

SOT-23

(TO-236)

0.4

Type

Code

Weight approx. – Gewicht ca.

0.01 g

Plastic material has UL classification 94V-0

Gehäusematerial UL94V-0 klassifiziert

1.9

Standard packaging taped and reeled

Standard Lieferform gegurtet auf Rolle

Dimensions - Maße [mm]

1 = G 2 = S 3 = D

Maximum ratings (T_A= 25°C)

Grenzwerte (T_A= 25°C)

MMFTN123

100 V

Drain-Source-voltage – Drain-Source-Spannung

Gate-Source-voltage – Gate-Source-Spannung

Power dissipation – Verlustleistung

V_DS

V_GSS

P_tot

I_D

± 20 V

360 mW ¹)

Drain current – Drainstrom (dc)

170 mA

Peak Drain current – Drain-Spitzenstrom

I_DM

680 mA

Junction temperature – Sperrschichttemperatur

Storage temperature – Lagerungstemperatur

T_j

T_S

150°C

-55…+150°C

Device mounted on standard PCB material

Bauteil montiert auf Standard-Leiterplattenmaterial

http://www.diotec.com/

MMFTN123

Characteristics (T_j= 25°C)

Kennwerte (T_j= 25°C)

Min.

Typ.

Max.

Drain-Source breakdown voltage – Drain-Source-Durchbruchspannung

I_D= 250 µA

V_(BR)DSS

100 V

Drain-Source leakage current – Drain-Source-Leckstrom

V_DS= 100 V

V_DS= 20 V

I_DSS

1 µA

10 nA

Gate-Source leakage current – Gate-Source-Leckstrom

V_GS= ± 20 V

I_GSS

± 50 nA

2 V

Gate-Source threshold voltage – Gate-Source Schwellspannung

V_GS= V_DS, I_D= 1 mA

V_GS(th)

0.8 V

Drain-Source on-state resistance – Drain-Source Einschaltwiderstand

V_GS= 10 V, I_D= 170 mA

V_GS= 4.5 V, I_D= 170 mA

R_DS(on)

6 Ω

10 Ω

Input Capacitance – Eingangskapazität

V_DS= 25 V, f = 1 MHz

C_iss

C_oss

C_rss

t_d(on)

t_r

73 pF

7 pF

Output Capacitance – Ausgangskapazität

V_DS= 10 V, f = 1 MHz

Reverse Transfer Capacitance – Rückwirkungskapazität

V_DS= 10 V, f = 1 MHz

3.4 pF

Turn-On Delay Time – Einschaltverzögerung

V_DD= 30 V, I_D= 280 mA, V_GS= 10 V, R_G= 6 Ω

3.4 ns

18 ns

31 ns

5 ns

Turn-On Rise Time – Anstiegszeit

V_DD= 30 V, I_D= 280 mA, V_GS= 10 V, R_G= 6 Ω

Turn-Off Delay Time – Ausschaltverzögerung

V_DD= 30 V, I_D= 280 mA, V_GS= 10 V, R_G= 6 Ω

t_d(off)

Turn-Off Fall Time – Abfallzeit

V_DD= 30 V, I_D= 280 mA, V_GS= 10 V, R_G= 6 Ω

t_f

Thermal resistance junction to ambient air

Wärmewiderstand Sperrschicht – umgebende Luft

R_thA

< 500 K/W ¹)

Device mounted on standard PCB material

Bauteil montiert auf Standard-Leiterplattenmaterial

http://www.diotec.com/

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