DMD3N60-TR [DYELEC]
600V N-Channel Power MOSFET;
| 型号： | DMD3N60-TR |
| 厂家： | 
DIYI Electronic Technology Co., Ltd. |
| 描述： | 600V N-Channel Power MOSFET |
| 文件： | 总8页 (文件大小：2139K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
3N60
600V N-Channel Power MOSFET
RDS(ON) < 3.6Ω@ VGS = 10V, ID =1.5A
Fast switching capability
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PRODUCT SUMMARY
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●
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VDS (V)
RDS(on)(Ω)
Current
Lead free in compliance with EU RoHS directive.
Improved dv/dt capability, high ruggedness
3A
600
3.6 @ VGS =10V
●
Case: TO-251,TO-252,TO-220,ITO-220
TO-262,TO-263 Package
Pin Definition:
1. Gate
2. Drain
3. Source
Ordering Information
Package
Part No.
DMP3N60-TU
DMD3N60-TR
DMD3N60-TU
DMT3N60-TU
DMF3N60-TU
Packing
75pcs / Tube
Block Diagram
TO-251
TO-252
TO-252
TO-220
ITO-220
D
2.5Kpcs / 13” Reel
75pcs / Tube
50pcs / Tube
50pcs / Tube
50pcs / Tube
G
DMK3N60-TU
DMG3N60-TU
DMG3N60-TU
TO-262
TO-263
TO-263
S
50pcs / Tube
800pcs / 13" Reel
ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
VDSS
VGSS
IAR
RATINGS
UNIT
Drain-Source Voltage
600
V
V
A
A
A
Gate-Source Voltage
±30
Avalanche Current (Note 2)
Continuous Drain Current
Pulsed Drain Current (Note 2)
3.0
ID
3.0
IDM
12
200
Single Pulsed (Note 3)
mJ
Avalanche Energy
EAS
TO-220/TO-262/TO-263
ITO-220
75
34
W
W
W
Power Dissipation
PD
TO-251/TO-252
50
Junction Temperature
Operating Temperature
Storage Temperature
TJ
+150
°C
°C
°C
TOPR
TSTG
-55 ~ +150
-55 ~ +150
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by TJ.
3. L = 44.4mH, IAS=3A, VDD=50V, RG=25 Ω, Starting TJ = 25°C
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3N60
600V N-Channel Power MOSFET
THERMAL DATA
Junction to Ambient
Junction to Case
PARAMETER
TO-220/ITO-220
SYMBOL
θJA
RATING
62.5
UNIT
°C/W
TO-262/TO-263
110
1.70
3.70
2.6
TO-251/ TO-252
TO-220/TO-262/TO-263
ITO-220
°C/W
θJC
TO-251/ TO-252
ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
Drain-Source Breakdown Voltage
BVDSS
IDSS
VGS = 0V, ID = 250μA
VDS = 600V, VGS = 0V
600
V
10
μA
Drain-Source Leakage Current
Gate-Source Leakage Current
100 nA
-100 nA
Forward
Reverse
VGS = 30V, VDS = 0V
IGSS
VGS = -30V, VDS = 0V
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
RDS(ON)
VDS = VGS, ID = 250μA
2.0
4.0
V
Static Drain-Source On-State Resistance
DYNAMIC CHARACTERISTICS
Input Capacitance
3.6
Ω
VGS=10 V, ID=1.5A
CISS
COSS
CRSS
350
50
pF
pF
pF
450
65
VDS = 25V, VGS = 0V,
f = 1MHz
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn-On Delay Time
5.5
7.5
tD(ON)
tR
tD(OFF)
tF
50
70
ns
ns
35
60
Turn-On Rise Time
VDD =30V, ID =0.5A,
RG=25Ω (Note 1, 2)
Turn-Off Delay Time
100 150 ns
75 ns
18.5 23 nC
Turn-Off Fall Time
65
Total Gate Charge
QG
VDS=50V, ID=1.3 A, IG=100μA
-
Gate-Source Charge
QGS
QGD
5.2
4.9
nC
nC
VGS=10V (Note 1, 2)
-
Gate-Drain Charge
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
VGS=0 V, IS=3.0A
Drain-Source Diode Forward Voltage
Maximum Continuous Drain-Source Diode
Forward Current
VSD
1.4
V
A
IS
3.0
Maximum Pulsed Drain-Source Diode
Forward Current
ISM
12
A
Reverse Recovery Time
trr
210
1.2
ns
VGS = 0 V, IS = 3A,
dIF/dt = 100 A/μs (Note 1)
Reverse Recovery Charge
QRR
μC
Notes: 1. Pulse Test: Pulse width≤300μs, Duty cycle≤2%
2. Essentially independent of operating temperature
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May,2015-REV.00
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3N60
600V N-Channel Power MOSFET
TYPICAL CHARACTERISTICS
On-Resistance Variation vs.
Drain Current and Gate Voltage
On State Current vs.
Allowable Case Temperature
6
5
4
10
VGS=20V
VGS=10V
3
2
1
Notes:
1. VGS=0V
2. 250µs Test
1
0
Note: J=25℃
0.1
0.2
0.4 0.6
0
2
4
6
8
10
12
0.8
1.2
1.0
1.4
1.6 1.8
Source-Drain Voltage, VSD (V)
Drain Current, ID (A)
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3N60
600V N-Channel Power MOSFET
TYPICAL CHARACTERISTICS
Maximum Drain Current vs. Case
Temperature
3.0
Transient Thermal Response Curve
1
2.5
2.0
D=0.5
0.2
0.1
1.5
1.0
0.5
0.1
0.05
0.02
0.01
Notes:
1. θJC (t) = 1.18 /W Max.
2. Duty Factor, D=t1/t2
3. TJM-TC=PDM×θJC (t)
Single Pulse
0.01
0
10-5
10-4 10-3
10-2
10-1
100
101
150
25
50
75
100
125
Square Wave Pulse Duration, t1 (sec)
Case Temperature, TC (°C)
Safe Operating Area – 600V
Operation in This Area is Limited by RDS(on)
101
100µs
1ms
10ms
DC
100
Notes:
1. TJ=25
2. TJ=150
3. Single Pulse
10-1
10-2
600103
100
101
102
Drain-Source Voltage, VDS (V)
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3N60
600V N-Channel Power MOSFET
TO-220 Mechanical Drawing
ITO-220 Mechanical Drawing
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3N60
600V N-Channel Power MOSFET
TO-262 Mechanical Drawing
TO-263 Mechanical Drawing
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3N60
600V N-Channel Power MOSFET
TO-251 Mechanical Drawing
TO-252 Mechanical Drawing
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3N60
600V N-Channel Power MOSFET
Notice
Specifications of the products displayed herein are subject to change without notice. DIYI or anyone on its behalf,
assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, to any
intellectual property rights is granted by this document. Except as provided in DIYI’s terms and conditions of sale for
such products, DIYI assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale
and/or use of DIYI products including liability or warranties relating to fitness for a particular purpose,
merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
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