DMG6N70-TR [DYELEC]

700V N-Channel Power MOSFET;
DMG6N70-TR
型号: DMG6N70-TR
厂家: DIYI Electronic Technology Co., Ltd.    DIYI Electronic Technology Co., Ltd.
描述:

700V N-Channel Power MOSFET

文件: 总8页 (文件大小:2116K)
中文:  中文翻译
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6N70  
700V N-Channel Power MOSFET  
RDS(ON), VGS@10V,ID@3A<1.7Ω  
Fast switching capability  
PRODUCT SUMMARY  
RDS(on)()  
VDS (V)  
Current(A)  
Low gate charge  
Lead free in compliance with EU RoHS directive.  
Green molding compound  
1.7 @ VGS =10V  
6
700  
Pin Definition:  
1. Gate  
2. Drain  
3. Source  
Case: TO-220,ITO-220,TO-262,TO-263 Package  
Ordering Information  
Package  
Part No.  
DMT6N70-TU  
DMF6N70-TU  
DMK6N70-TU  
DMG6N70-TU  
DMG6N70-TR  
Packing  
50pcs / Tube  
50pcs / Tube  
50pcs / Tube  
50pcs / Tube  
800pcs / 13" Reel  
Block Diagram  
TO-220  
ITO-220  
TO-262  
TO-263  
TO-263  
D
G
S
ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified)  
PARAMETER  
SYMBOL  
RATINGS  
UNIT  
V
Drain-Source Voltage  
700  
VDSS  
VGSS  
ID  
Gate-Source Voltage  
Continuous Drain Current  
Pulsed Drain Current  
±30  
V
A
6
IDM  
24  
A
Single Pulse Avalanche Energy (Note 1)  
mJ  
EAS  
321  
142  
45  
TO-220/TO-262/TO-263  
W
W
Power Dissipation  
PD  
ITO-220  
Junction Temperature  
Operating Temperature  
Storage Temperature  
NOTES :  
TJ  
+150  
°C  
°C  
°C  
TOPR  
TSTG  
-55 ~ +150  
-55 ~ +150  
1. L=30mH, IAS=4.5A, VDD=50V, RG=25ohm, Starting TJ=25oC  
2. Pulse width<300us, Duty cycle<2%  
3. Essentially independent of operating temperature typical characteristics.  
4. Guaranteed by design, not subject to production testing  
1 / 8  
May.2015-REV.00  
www.dyelec.com  
6N70  
700V N-Channel Power MOSFET  
THERMAL DATA  
PARAMETER  
SYMBOL  
RATING  
UNIT  
°C/W  
TO-220/TO-262/TO-263  
ITO-220  
62.5  
120  
Junction to Ambient  
Junction to Case  
θJA  
TO-220/TO-262/TO-263  
ITO-220  
0.78  
2.78  
°C/W  
θJC  
ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified)  
PARAMETER  
SYMBOL  
TEST CONDITION  
MIN.  
TYP.  
MAX.  
UNITS  
Static  
Drain-Source Breakdown Voltage  
Gate Threshold Voltage  
Drain-Source On-State Resistance  
Zero Gate Voltage Drain Current  
Gate-Source Leakage Current  
Diode Forward Voltage  
Dynamic (Note 4)  
BVDSS  
VGS(th)  
RDS(on)  
IDSS  
VGS=0V,ID=250uA  
VDS=VGS,ID=250uA  
VGS=10V,ID=3A  
700  
-
-
4
V
V
2
-
2.8  
1.47  
0.03  
+10  
0.87  
1.7  
1.0  
+100  
1.4  
Ω
VDS=700V,VGS=0V  
VGS=+30V,VDS=0V  
IS=6A,VGS=0V  
-
uA  
nA  
V
IGSS  
-
VSD  
-
Total Gate Charge  
Qg  
Qgs  
Qgd  
Ciss  
Coss  
Crss  
td(on)  
tr  
-
-
-
-
-
-
-
-
-
-
16.5  
4.8  
5.7  
831  
92  
-
-
-
-
-
-
-
-
-
-
VDS=560V, ID=6A,  
VGS=10V (Note 2,3)  
Gate-Source Charge  
nC  
pF  
Gate-Drain Charge  
Input Capacitance  
VDS=25V, VGS=0V,  
f=1.0MHZ  
Output Capacitance  
Reverse Transfer Capacitance  
Turn-On Delay Time  
0.8  
25  
VDD=350V, ID=6A,  
RG=25Ω (Note 2,3)  
Turn-On Rise Time  
38  
ns  
Turn-Off Delay Time  
td(off)  
tf  
49  
Turn-Off Fall Time  
30  
Drain-Source Diode  
Maximum Continuous Drain-Source  
Diode Forward Current  
Maximum Pulsed Drain-Source  
Diode Forward Current  
Reverse Recovery Time  
Reverse Recovery Charge  
IS  
---  
---  
-
-
-
-
6
A
A
ISM  
24  
trr  
-
-
531  
3.3  
-
-
ns  
VGS=0V, IS=6A  
dIF/ dt=100A/us (Note 2)  
Qrr  
uC  
May.2015-REV.00  
www.dyelec.com  
2 / 8  
6N70  
700V N-Channel Power MOSFET  
TYPICAL CHARACTERISTICS  
Fig.1 Output Characteristics  
Fig.3 On-Resistance vs. Drain Current  
Fig.5 Capacitance vs. Drain-Source Voltage  
Fig.2 Transfer Characteristics  
Fig.4 On-Resistance vs. Junction Temperature  
Fig.6 Source-Drain Diode Forward Voltage  
3 / 8  
May.2015-REV.00  
www.dyelec.com  
6N70  
700V N-Channel Power MOSFET  
TYPICAL CHARACTERISTICS  
Fig.7 Gate Charge  
Fig.8 BVDSS vs. Junction Temperature  
Fig.10 Maximum Safe Operating Area  
Fig.12 Maximum Safe Operating Area  
Fig.9 Threshold Voltage Variation with Temperature  
Fig.11 Maximum Safe Operating Area  
4 / 8  
May.2015-REV.00  
www.dyelec.com  
6N70  
700V N-Channel Power MOSFET  
TYPICAL CHARACTERISTICS  
Fig.13 PJU/PJD Normalized Transient Thermal Impedance vs. Pulse Width  
Fig.14 PJP6NA70 Normalized Transient Thermal Impedance vs. Pulse Width  
Fig.15 PJF6NA70 Normalized Transient Thermal Impedance vs. Pulse Width  
5 / 8  
May.2015-REV.00  
www.dyelec.com  
6N70  
700V N-Channel Power MOSFET  
TO-220 Mechanical Drawing  
ITO-220 Mechanical Drawing  
6 / 8  
May.2015-REV.00  
www.dyelec.com  
6N70  
700V N-Channel Power MOSFET  
TO-262 Mechanical Drawing  
TO-263 Mechanical Drawing  
7 / 8  
May,2015-REV.00  
www.dyelec.com  
6N70  
700V N-Channel Power MOSFET  
Notice  
Specifications of the products displayed herein are subject to change without notice. DIYI or anyone on its behalf,  
assumes no responsibility or liability for any errors or inaccuracies.  
Information contained herein is intended to provide a product description only. No license, express or implied, to any  
intellectual property rights is granted by this document. Except as provided in DIYI’s terms and conditions of sale for  
such products, DIYI assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale  
and/or use of DIYI products including liability or warranties relating to fitness for a particular purpose,  
merchantability, or infringement of any patent, copyright, or other intellectual property right.  
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.  
Customers using or selling these products for use in such applications do so at their own risk and agree to fully  
indemnify DIYI for any damages resulting from such improper use or sale.  
www.dyelec.com  
May.2015-REV.00  
8 / 8  

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