DSF21060SV60 [DYNEX]
Fast Recovery Diode; 快恢复二极管
| 型号： | DSF21060SV60 |
| 厂家： | 
Dynex Semiconductor |
| 描述： | Fast Recovery Diode |
| 文件： | 总9页 (文件大小：77K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DSF21060SV
Fast Recovery Diode
Replaces March 1998 version, DDS4231-2.3
DS4231-3.0 January 2000
APPLICATIONS
■ Freewheel Diode.
■ Antiparallel Diode.
■ Inverters.
KEY PARAMETERS
VRRM
IF(AV)
IFSM
Qr
6000V
1690A
16000A
1200µC
6.5µs
■ Choppers.
trr
FEATURES
■ Double Side Cooling.
■ High Surge Capability.
■ Low Recovery Charge.
VOLTAGE RATINGS
Type Number
Repetitive Peak
Conditions
Reverse Voltage
VRRM
V
DSF21060SV60
DSF21060SV59
DSF21060SV58
DSF21060SV57
DSF21060SV56
DSF21060SV55
6000
5900
5800
5700
5600
5500
V
RSM = VRRM + 100V
Outline type code: V.
See Package Details for further information.
CURRENT RATINGS
Max.
Units
Symbol
Parameter
Conditions
Double Side Cooled
IF(AV)
Half wave resistive load, Tcase = 65oC
Tcase = 65oC
1690
2655
2460
A
A
A
Mean forward current
RMS value
Continuous (direct) forward current
Single Side Cooled (Anode side)
IF(RMS)
IF
T
case = 65oC
IF(AV)
IF(RMS)
IF
Mean forward current
RMS value
Half wave resistive load, Tcase = 65oC
case = 65oC
Tcase = 65oC
1090
1710
1520
A
A
A
T
Continuous (direct) forward current
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DSF21060SV
SURGE RATINGS
Conditions
Symbol
Parameter
Max.
Units
IFSM
I2t
Surge (non-repetitive) forward current
I2t for fusing
12.8
kA
10ms half sine; with 0% VRRM, Tj = 125oC
819.2 x 103 A2s
IFSM
I2t
Surge (non-repetitive) forward current
I2t for fusing
16.0
kA
10ms half sine; with 50% VRRM, Tj = 125oC
10ms half sine; with 100% VRRM, Tj = 125oC
1280 x 103 A2s
IFSM
I2t
Surge (non-repetitive) forward current
I2t for fusing
-
-
kA
A2s
THERMAL AND MECHANICAL DATA
Conditions
Min.
Max. Units
0.0075 oC/W
0.015 oC/W
Parameter
Symbol
dc
-
-
Double side cooled
Rth(j-c)
Anode dc
Thermal resistance - junction to case
Single side cooled
Cathode dc
-
-
-
0.015 oC/W
0.002 oC/W
0.004 oC/W
Double side
Clamping force 40.0kN
with mounting compound
Thermal resistance - case to heatsink
Rth(c-h)
Single side
oC
oC
kN
Tvj
Tstg
-
Forwartd (conducting)
-
130
150
Virtual junction temperature
Storage temperature range
-55
Clamping force
36.0
44.0
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DSF21060SV
CHARACTERISTICS
Symbol
Typ.
Units
Parameter
Conditions
At 600A peak, Tcase = 25oC
At VRRM, Tcase = 125oC
Max.
3.0
VFM
IRRM
trr
Forward voltage
-
-
-
V
75
mA
Peak reverse current
Reverse recovery time
6.5
µs
QRA1
IRM
Recovered charge (50% chord)
Reverse recovery current
Soft factor
IF = 1000A, diRR/dt = 100A/µs
-
-
1500
460
-
µC
A
T
case = 125oC, VR = 100V
K
1.8
-
-
Threshold voltage
At Tvj = 125oC
1.625
0.66
-
V
VTO
rT
Slope resistance
At Tvj = 125oC
-
mΩ
V
VFRM
Forward recovery voltage
di/dt = 1000A/µs, Tj = 100oC
140
DEFINITION OF K FACTOR AND QRA1
QRA1 = 0.5x IRR(t1 + t2)
k = t1/t2
dIR/dt
t1
t2
τ
0.5x IRR
IRR
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DSF21060SV
CURVES
7000
6000
5000
4000
3000
2000
1000
0
Measured under pulse conditions
Tj = 150˚C
Tj = 25˚C
0
2.0
4.0
6.0
8.0
10.0
Instantaneous forward voltage VF - (V)
Fig. 1 Maximum (limit) forward characteristics
4/9
DSF21060SV
500
400
300
200
100
0
Measured under pulse conditions
Tj = 150˚C
Tj = 25˚C
1.0
1.5
2.0
2.5
3.0
Instantaneous forward voltage VF - (V)
Fig. 2 Maximum (limit) forward characteristics
500
400
300
200
100
0
Current
waveform
VFR
Voltage
waveform
di = δy
dt δx
δy
δx
Tj = 100˚C limit
Tj = 25˚C limit
0
1000
2000
3000
4000
Rate of rise of forward current dIF/dt - (A/µs)
Fig. 3 Transient forward voltage vs rate of rise of forward current
5/9
DSF21060SV
100000
10000
1000
50µs
Conditions:
Tj = 125˚C,
VR = 100V
IF
Q =
∫
S
0
Q
S
tp = 1ms
dIR/dt
IRR
IF = 4000A
IF = 2000A
IF = 1000A
IF = 500A
IF = 200A
IF = 100A
100
1
10
100
1000
Rate of rise of reverse current dIR/dt - (A/µs)
Fig. 4 Recovered charge
10000
1000
100
Conditions:
Tj = 125˚C,
VR = 100V
IF = 4000A
IF = 2000A
IF = 1000A
IF = 500A
IF = 200A
IF = 100A
10
1
10
100
1000
Rate of rise of reverse current dIR/dt - (A/µs)
Fig. 5 Typical reverse recovery current vs rate of rise of reverse current
6/9
DSF21060SV
0.1
d.c.Double side cooled
0.01
0.001
0.0001
0.001
0.01
0.1
1.0
10
100
Time - (s)
Fig. 5 Maximum (limit) transient thermal impedance - junction to case - (˚C/W)
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DSF21060SV
PACKAGE DETAILS
For further package information, please contact your local Customer Service Centre. All dimensions in mm, unless stated otherwise.
DO NOT SCALE.
2 holes Ø3.6 x 2.0 deep (In both electrodes)
Cathode
Ø112.5 max
Ø73 nom
Ø73 nom
Anode
Nominal weight: 1100g
Clamping force: 43kN ±10%
Package outine type code: V
ASSOCIATED PUBLICATIONS
Title
Application Note
Number
Calculating the junction temperature or power semiconductors
Recommendations for clamping power semiconductors
Thyristor and diode measurement with a multi-meter
Use of VTO, rT on-state characteristic
AN4506
AN4839
AN4853
AN5001
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DSF21060SV
POWER ASSEMBLY CAPABILITY
The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconduc-
tor, and has developed a flexible range of heatsink / clamping systems in line with advances in device types and the voltage and
current capability of our semiconductors.
We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The
Assembly group continues to offer high quality engineering support dedicated to designing new units to satisfy the growing needs of
our customers.
Using the up to date CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete
solution (PACs).
DEVICE CLAMPS
Disc devices require the correct clamping force to ensure their safe operation. The PACs range offers a varied selection of pre-
loaded clamps to suit all of our manufactured devices. This include cube clamps for single side cooling of ‘T’ 22mm
Clamps are available for single or double side cooling, with high insulation versions for high voltage assemblies.
Please refer to our application note on device clamping, AN4839
HEATSINKS
Power Assembly has it’s own proprietary range of extruded aluminium heatsinks. They have been designed to optimise the
performance or our semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on
request.
For further information on device clamps, heatsinks and assemblies, please contact your nearest Sales Representative or the
factory.
http://www.dynexsemi.com
e-mail: power_solutions@dynexsemi.com
HEADQUARTERS OPERATIONS
CUSTOMER SERVICE CENTRES
France, Benelux, Italy and Spain Tel: +33 (0)1 69 18 90 00. Fax: +33 (0)1 64 46 54 50
North America Tel: 011-800-5554-5554. Fax: 011-800-5444-5444
UK, Germany, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020
DYNEX SEMICONDUCTOR LTD
Doddington Road, Lincoln.
Lincolnshire. LN6 3LF. United Kingdom.
Tel: 00-44-(0)1522-500500
SALES OFFICES
Fax: 00-44-(0)1522-500550
France, Benelux, Italy and Spain Tel: +33 (0)1 69 18 90 00. Fax: +33 (0)1 64 46 54 50
Germany Tel: 07351 827723
DYNEX POWER INC.
Unit 7 - 58 Antares Drive,
Nepean, Ontario, Canada K2E 7W6.
Tel: 613.723.7035
Fax: 613.723.1518
Toll Free: 1.888.33.DYNEX (39639)
North America Tel: (613) 723-7035. Fax: (613) 723-1518. Toll Free: 1.888.33.DYNEX (39639) /
Tel: (831) 440-1988. Fax: (831) 440-1989 / Tel: (949) 733-3005. Fax: (949) 733-2986.
UK, Germany, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020
These offices are supported by Representatives and Distributors in many countries world-wide.
© Dynex Semiconductor 2000 Publication No. DS4231-3 Issue No. 3.0 January 2000
TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRINTED IN UNITED KINGDOM
Datasheet Annotations:
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Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started.
Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change.
Advance Information: The product design is complete and final characterisation for volume production is well in hand.
No Annotation: The product parameters are fixed and the product is available to datasheet specification.
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