GP800DDM12 [DYNEX]
Hi-Reliability Dual Switch IGBT Module Advance Information; 嗨，可靠性双路开关IGBT模块的高级信息
| 型号： | GP800DDM12 |
| 厂家： | 
Dynex Semiconductor |
| 描述： | Hi-Reliability Dual Switch IGBT Module Advance Information |
| 文件： | 总11页 (文件大小：116K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
GP800DDM12
Hi-Reliability Dual Switch IGBT Module
Advance Information
Replaces May 2000 version, DS5291-1.3
DS5291-2.0 October 2000
FEATURES
KEY PARAMETERS
VCES
VCE(sat)
IC
1200V
2.7V
800A
1600A
■ High Thermal Cycling Capability
■ 800A Per Switch
(typ)
(max)
(max)
IC(PK)
■ Non Punch Through Silicon
■ Isolated MMC Base with AlN Substrates
APPLICATIONS
■ High Reliability Inverters
■ Motor Controllers
11(G2)
12(C2)
2(C2)
10(E2)
3(C1)
4(E2)
■ Traction Drives
1(E1)
5(E1)
6(G1)
7(C1)
■ Resonant Converters
The Powerline range of high power modules includes dual
and single switch configurations covering voltages from 1200V to
3300V and currents up to 4800A.
The GP800DDM12 is a dual switch 1200V, n channel
enhancement mode, insulated gate bipolar transistor (IGBT)
module. The IGBT has a wide reverse bias safe operating area
(RBSOA) ensuring reliability in demanding applications. This
device is optimised for traction drives and other applications
requiring high thermal cycling capability or very high reliability.
Fig. 1 Dual switch circuit diagram
5
6
The module incorporates an electrically isolated base plate
and low inductance construction enabling circuit designers to
optimise circuit layouts and utilise earthed heat sinks for safety.
3
4
1
2
7
8
ORDERING INFORMATION
9
12
Order As:
11
GP800DDM12
Note: When ordering, please use the whole part number.
10
Outline type code: D
(See package details for further information)
Fig. 2 Electrical connections - (not to scale)
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
1/11
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GP800DDM12
ABSOLUTE MAXIMUM RATINGS - PER ARM
Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme
conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety
precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability.
Tcase = 25˚C unless stated otherwise
Symbol
VCES
VGES
IC
Parameter
Collector-emitter voltage
Gate-emitter voltage
Test Conditions
Max. Units
VGE = 0V
1200
±20
V
V
-
Continuous collector current
Peak collector current
Tcase = 80˚C
800
A
IC(PK)
Pmax
Visol
1ms, Tcase = 105˚C
1600
6490
4000
A
Max. transistor power dissipation Tcase = 25˚C, Tj = 150˚C
Isolation voltage Commoned terminals to base plate. AC RMS, 1 min, 50Hz
W
V
THERMAL AND MECHANICAL RATINGS
Min.
Symbol
Parameter
Test Conditions
Continuous dissipation -
junction to case
Max. Units
-
-
-
Rth(j-c)
Thermal resistance - transistor (per arm)
18
40
8
˚C/kW
˚C/kW
˚C/kW
Rth(j-c)
Rth(c-h)
Tj
Thermal resistance - diode (per arm)
Continuous dissipation -
junction to case
Thermal resistance - case to heatsink (per module) Mounting torque 5Nm
(with mounting grease)
Junction temperature
Transistor
Diode
-
150
125
125
5
˚C
˚C
-
–40
Tstg
-
Storage temperature range
Screw torque
-
˚C
-
-
-
Mounting - M6
Nm
Nm
Nm
Electrical connections - M4
Electrical connections - M8
2
10
2/11
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
GP800DDM12
ELECTRICAL CHARACTERISTICS
Tcase = 25˚C unless stated otherwise.
Min.
Typ.
Symbol
Parameter
Test Conditions
GE = 0V, VCE = VCES
Max. Units
ICES
Collector cut-off current
V
-
-
-
4
-
-
-
-
-
-
-
-
-
-
1
50
±4
7.5
3.5
4
mA
mA
µA
V
VGE = 0V, VCE = VCES, Tcase = 125˚C
VGE = ±20V, VCE = 0V
IC = 120mA, VGE = VCE
VGE = 15V, IC = 800A
VGE = 15V, IC = 800A, , Tcase = 125˚C
DC, Tcase = 50˚C
IGES
Gate leakage current
-
VGE(TH)
VCE(sat)
Gate threshold voltage
-
2.7
3.2
-
Collector-emitter saturation voltage
V
V
IF
Diode forward current
800
1600
2.4
2.5
-
A
-
IFM
VF
Diode maximum forward current
Diode forward voltage
tp = 1ms
A
2.2
2.3
90
20
IF = 800A
V
IF = 800A, Tcase = 125˚C
VCE = 25V, VGE = 0V, f = 1MHz
-
V
Cies
LM
Input capacitance
Module inductance
nF
nH
-
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
3/11
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GP800DDM12
ELECTRICAL CHARACTERISTICS
Tcase = 25˚C unless stated otherwise
Min.
Typ.
1100
150
130
800
320
90
Symbol
td(off)
tf
Parameter
Turn-off delay time
Test Conditions
Max. Units
-
-
-
-
-
-
-
IC = 800A
1300
200
170
900
400
130
200
ns
ns
Fall time
VGE = ±15V
EOFF
td(on)
tr
Turn-off energy loss
Turn-on delay time
Rise time
VCE = 600V
RG(ON) = RG(OFF) = 3.3Ω
L ~ 100nH
mJ
ns
ns
EON
Qrr
Turn-on energy loss
Diode reverse recovery charge
mJ
µC
150
IF = 800A, VR = 50% VCES
,
dIF/dt = 2000A/µs-1
Tcase = 125˚C unless stated otherwise
Parameter
Turn-off delay time
Test Conditions
IC = 800A
Min.
Typ.
1300
200
170
950
350
150
200
Max. Units
Symbol
td(off)
tf
-
-
-
-
-
-
-
1500
250
250
1200
450
200
260
ns
ns
Fall time
VGE = ±15V
EOFF
td(on)
tr
Turn-off energy loss
Turn-on delay time
Rise time
VCE = 600V
mJ
ns
RG(ON) = RG(OFF) = 3.3Ω
L ~ 100nH
ns
EON
Qrr
Turn-on energy loss
Diode reverse recovery charge
mJ
µC
IF = 800A, VR = 50% VCES
,
dIF/dt = 2000A/µs-1
4/11
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
GP800DDM12
TYPICAL CHARACTERISTICS
Vge = 20/15/12/10V
Vge = 20/15/12/10V
1600
1600
1400
1200
1000
800
Common emitter
Tcase = 25˚C
Common emitter
Tcase = 125˚C
1400
1200
1000
800
600
600
400
200
0
400
200
0
0
1.0
2.0
3.0
4.0
5.0
0
1.0
2.0
3.0
4.0
5.0
Collector-emitter voltage, Vce - (V)
Collector-emitter voltage, Vce - (V)
Fig. 3 Typical output characteristics
Fig. 4 Typical output characteristics
220
200
180
160
140
120
100
80
160
Conditions:
Conditions:
Tcase = 25˚C,
Tcase = 125˚C,
VCE = 600V,
VGE = ±15V
A
A
140 VCE = 600V,
VGE = ±15V
120
100
80
60
40
20
0
B
C
B
C
60
40
A : Rg = 6.8Ω
B : Rg = 4.7Ω
C : Rg = 3.3Ω
A : Rg = 6.8Ω
B : Rg = 4.7Ω
C : Rg = 3.3Ω
20
0
0
100
200
300
400
500 600
700 800
0
100
200
300
400
500
600
700
800
Collector current, IC - (A)
Collector current, IC - (A)
Fig. 5 Typical turn-on energy vs collector current
Fig. 6 Typical turn-off energy vs collector current
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
5/11
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GP800DDM12
180
250
200
150
100
50
Conditions:
Tcase = 25˚C,
VCE = 600V,
Conditions:
Tcase = 125˚C,
VCE = 600V,
160
V
GE = ±15V
A
B
VGE = ±15V
140
120
100
80
A
B
C
C
60
40
A : Rg = 6.8Ω
B : Rg = 4.7Ω
C : Rg = 3.3Ω
A : Rg = 6.8Ω
B : Rg = 4.7Ω
C : Rg = 3.3Ω
20
0
0
0
100
200
300
400
500
600
700
800
0
100
200
300
400
500
600
700
800
Collector current, IC - (A)
Collector current, IC - (A)
Fig.7 Typical turn-off energy vs collector current
Fig.8 Typical turn-off energy vs collector current
2000
70
Conditions:
VCE = 600V,
VGE = 15V,
Rg = 3.3Ω
Conditions:
case = 125˚C,
T
1800
1600
1400
1200
1000
800
600
400
200
0
Tcase = 125˚C
VCE = 600V
VGE = 15V
Rg = 3.3Ω
60
50
40
30
20
10
0
td(off)
tf
td(on)
T
case = 25˚C
tr
0
200
400
Collector current, IC (A)
600
800
0
100
200
300
400
500
600
700
800
Collector currrent, IC - (A)
Fig.9 Typical diode reverse recovery charge vs collector current
Fig.10 Typical switching characteristics
6/11
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
GP800DDM12
1600
1400
1200
1000
800
600
400
200
0
2000
1800
1600
1400
Tj = 25˚C
Tj = 125˚C
1200
1000
800
600
400
200
0
Tcase = 125˚C
Vge = ±15V
Rg = 3.3Ω*
*Recommended minimum value
0
0.5
1
1.5
2
2.5
3
3.5
1000
1200
600
Collector-emitter voltage, Vce - (V)
0
200
400
800
Forward voltage, VF - (V)
Fig.11 Diode typical forward characteristics
Fig.12 Reverse bias safe operating area
10000
1000
100
10
100
Diode
Transistor
IC max. (single pulse)
10
tp = 50µs
tp = 100µs
tp = 1ms
1
0.1
1
10000
1
10
100
1000
1
10
100
1000
10000
Pulse width, tp - (ms)
Collector-emitter voltage, Vce - (V)
Fig.13 Forward bias safe operating area
Fig.14 Transient thermal impedance
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
7/11
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GP800DDM12
2000
1800
1600
1400
1200
1000
800
1400
1200
1000
800
PWM Sine Wave.
Power Factor = 0.9,
Modulation Index = 1
600
600
400
400
Conditions:
Tj = 125°C, Tc = 75°C,
Rg = 3.3Ω, VCC = 600V
200
200
0
0
0
1
10
max - (kHz)
50
20
40
60
80
100
120
140
160
f
Case temperature, Tcase - (˚C)
Fig.15 3-Phase inverter operating frequency
Fig.16 DC current rating vs case temperature
8/11
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
GP800DDM12
PACKAGE DETAILS
Forfurtherpackageinformation, please visitourwebsiteorcontactyournearestCustomerServiceCentre. Alldimensionsinmm, unless
stated otherwise. DO NOT SCALE.
62
62
15
15
5
6
3
1
7
8
9
12
4
2
11
10
11.5
35
20
6x Ø7
14
4x M8
6x M4
5
140
Nominal weight: 1000g
Module outline type code: D
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
9/11
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GP800DDM12
ASSOCIATED PUBLICATIONS
Title
Application Note
Number
AN4502
AN4503
AN4504
AN4505
AN4506
AN4507
AN4508
AN4869
AN5000
AN5167
AN5384
Electrostatic handling precautions
An introduction to IGBTs
IGBT ratings and characteristics
Heatsink requirements for IGBT modules
Calculating the junction temperature of power semiconductors
Gate drive considerations to maximise IGBT efficiency
Parallel operation of IGBTs – punch through vs non-punch through characteristics
Guidance notes for formulating technical enquiries
Principle of rating parallel connected IGBT modules
Short circuit withstand capability in IGBTs
Driving Dynex Semincoductor IGBT modules with Concept gate drivers
POWER ASSEMBLY CAPABILITY
The Power Assembly group was set up to provide a support service for those customers requiring more than the basic
semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages and
current capability of our semiconductors.
We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The
Assembly group continues to offer high quality engineering support dedicated to designing new units to satisfy the growing needs of
our customers.
Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete
Solution (PACs).
HEATSINKS
The Power Assembly group has its own proprietary range of extruded aluminium heatsinks. They have been designed to optimise
the performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is
available on request.
For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or customer
service office.
10/11
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
GP800DDM12
http://www.dynexsemi.com
e-mail: power_solutions@dynexsemi.com
HEADQUARTERS OPERATIONS
DYNEX SEMICONDUCTOR LTD
Doddington Road, Lincoln.
Lincolnshire. LN6 3LF. United Kingdom.
Tel: 00-44-(0)1522-500500
CUSTOMER SERVICE CENTRES
Central Europe Tel: +33 (0)1 58 04 91 02. Fax: +33 (0)1 46 38 51 33
North America Tel: 011-800-5554-5554. Fax: 011-800-5444-5444
UK, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020
SALES OFFICES
Fax: 00-44-(0)1522-500550
Central Europe Tel: +33 (0)1 69 18 90 00. Fax: +33 (0)1 46 38 51 33
North America Tel: (613) 723-7035. Fax: (613) 723-1518. Toll Free: 1.888.33.DYNEX (39639) /
Tel: (949) 733-3005. Fax: (949) 733-2986.
DYNEX POWER INC.
Unit 7 - 58 Antares Drive,
Nepean, Ontario, Canada K2E 7W6.
Tel: 613.723.7035
UK, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020
Fax: 613.723.1518
Toll Free: 1.888.33.DYNEX (39639)
These offices are supported by Representatives and Distributors in many countries world-wide.
© Dynex Semiconductor 2000 Publication No. DS5291-2 Issue No. 2.0 October 2000
TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRODUCED IN UNITED KINGDOM
Datasheet Annotations:
Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:-
Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started.
Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change.
Advance Information: The product design is complete and final characterisation for volume production is well in hand.
No Annotation: The product parameters are fixed and the product is available to datasheet specification.
This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as
a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves
the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such
methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication
or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury
or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request.
All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners.
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
11/11
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