MP02TT200-12 [DYNEX]
Dual Thyristor Water Cooled Module Preliminary Information; 双晶闸管水冷模块初步信息
| 型号： | MP02TT200-12 |
| 厂家： | 
Dynex Semiconductor |
| 描述： | Dual Thyristor Water Cooled Module Preliminary Information |
| 文件： | 总9页 (文件大小：130K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MP02TT200
Dual Thyristor Water Cooled Module
Preliminary Information
DS5434-1.1 April 2001
FEATURES
KEY PARAMETERS
VDRM
IT(AV)
1600V
200A
■ Dual Device Module
■ Electrically Isolated Package
■ Pressure Contact Construction
■ International Standard Footprint
■ Alumina (Non Toxic) Isolation Medium
■ Integral Water Cooled Heatsink
ITSM(per arm)
IT(RMS)
Visol
6800A
318A
3000V
G1 K1 K2 G2
2
3
1
APPLICATIONS
■ Motor Control
Fig. 1 Circuit diagram
■ Controlled Rectifier Bridges
■ Heater Control
■ AC Phase Control
K2
G2
VOLTAGE RATINGS
Type Number
Repetitive Peak
Voltages
VDRM VRRM
V
Conditions
K1 G1
2
3
1
MP02TT200-16
MP02TT200-15
MP02TT200-14
MP02TT200-13
MP02TT200-12
1600
1500
1400
1300
1200
Tvj = 0˚ to 125˚C,
IDRM = IRRM = 30mA
VDSM = VRSM
=
VDRM = VRRM + 100V
respectively
Lower voltage grades available
ORDERING INFORMATION
Outline type code: MP02 W12/W13
Order As:
(See package details for further information)
MP02TT200-XX-W12
MP02TT200-XX-W13
1/4 - 18 NPT connection
1/4 BSP connection
Fig. 2 Electrical connections - (not to scale)
XX shown in the part number about represents VDRM/100
selection required, e.g. MP02TT200-14-W12
Note: When ordering, please use the whole part number.
Auxiliary gate and cathode leads can be ordered separately.
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MP02TT200
ABSOLUTE MAXIMUM RATINGS - PER ARM
Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme
conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety
precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability.
Symbol
Parameter
Test Conditions
Half wave resistive load,
Max.
230
200
180
360
318
6.8
Units
A
IT(AV)
Mean on-state current
Twater (in) = 25˚C
water (in) = 40˚C
4.5 Ltr/min
T
A
Twater (in) = 50˚C
A
IT(RMS
RMS value
Twater (in) = 25˚C @ 4.5 Ltr/min
Twater (in) = 40˚C @ 4.5 Ltr/min
A
A
ITSM
I2t
ITSM
I2t
Surge (non-repetitive) on-current
I2t for fusing
10ms half sine, Tj = 125˚C
kA
VR = 0
0.231 x 106 A2s
5.5 kA
0.15 x 106 A2s
Surge (non-repetitive) on-current
I2t for fusing
10ms half sine, Tj = 125˚C
VR = 50% VDRM
Visol
Isolation voltage
Commoned terminals to base plate.
AC RMS, 1 min, 50Hz
3000
V
THERMAL AND MECHANICAL RATINGS
Min.
Symbol
Parameter
Thermal resistance - junction to water
(per thyristor)
Test Conditions
dc, 4.5 Ltr/min
Max.
0.3
Units
˚C/kW
˚C/kW
˚C/kW
˚C
-
Rth(j-w)
-
Half wave, 4.5 Ltr/min
3 Phase, 4.5 Ltr/min
Reverse (blocking)
-
0.32
0.33
125
125
-
-
Tvj
Tstg
-
Virtual junction temperature
Storage temperature range
Screw torque
-
–40
˚C
Mounting - M6
Electrical connections - M6
-
5 (44)
Nm (lb.ins)
-
-
5 (44) Nm (lb.ins)
-
Weight (nominal)
1200
g
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MP02TT200
DYNAMIC CHARACTERISTICS
Parameter
Test Conditions
At VRRM/VDRM, Tj = 125˚C
Min.
Max. Units
Symbol
IRRM/IDRM
dV/dt
-
-
-
Peak reverse and off-state current
Linear rate of rise of off-state voltage
Rate of rise of on-state current
30
mA
To 67% VDRM, Tj = 125˚C
From 67% VDRM to 200A, gate source 10V, 5Ω
tr = 0.5µs, Tj = 125˚C
1000
500
V/µs
A/µs
dI/dt
-
-
0.98
0.75
V
VT(TO)
rT
Threshold voltage
At Tvj = 125˚C
On-state slope resistance
At Tvj = 125˚C
mΩ
Note 1: The data given in this datasheet with regard to forward voltage drop is for calculation of the power dissipation in the
semiconductor elements only. Forward voltage drops measured at the power terminals of the module will be in excess of these
figures due to the impedance of the busbar from the terminal to the semiconductor.
GATE TRIGGER CHARACTERISTICS AND RATINGS
Symbol
VGT
Parameter
Gate trigger voltage
Test Conditions
VDRM = 5V, Tcase = 25oC
Max.
3
Units
V
Gate trigger current
VDRM = 5V, Tcase = 25oC
150
0.25
30
mA
V
IGT
VGD
Gate non-trigger voltage
Peak forward gate voltage
Peak forward gate voltage
Peak reverse gate voltage
Peak forward gate current
Peak gate power
At VDRM Tcase = 125oC
Anode positive with respect to cathode
V
VFGM
VFGN
VRGM
IFGM
Anode negative with respect to cathode
0.25
5
V
-
V
Anode positive with respect to cathode
10
A
PGM
See table fig. 5
100
5
W
W
PG(AV)
Mean gate power
-
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MP02TT200
2000
20
Measured under pulse conditions
1500
1000
500
0
180
140
100
15
10
I2t
Tj = 125˚C
5
0
60
10
1
2
3 4 5
50
20 30
10
1
0.5
1.0
1.5
2.0
2.5
Instantaneous on-state voltage, VT - (V)
ms
cycles at 50Hz
Duration
Fig. 3 Maximum (limit) on-state characteristics
Fig. 4 Surge (non-repetitive) on-state current vs time
(with 50% VRSM at Tcase = 125˚C)
100
VFGM
10
1.0
Table gives pulse power PGM in watts
Pulse Pulse Frequency
Width
µs
Hz
100 400
50
100W
75W
50W
20
25
100
500
1ms
10ms
100 100
100 100
100 100
100
100
100
100
100
10
10W
5W
100
50
-
25
-
-
0.1
Tj = 25˚C
Tj = 125˚C
1.0
0.01
mit 1%
Upper limit 99%
VGD
0.1
Lower li
0.001
0.001
0.001
0.01
0.1
1.0
10
IFGM
0.01
0.1
1
10
1000
100
Gate trigger current, IGT - (A)
Time - (s)
Fig. 5 Gate characteristics
Fig. 6 Transient thermal impedance - dc
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MP02TT200
600
500
400
700
600
500
400
300
200
180˚
120˚
90˚
180˚
120˚
90˚
60˚
Conduction Angle 30˚
60˚
Conduction Angle 30˚
300
200
100
0
100
0
0
100
200
300
400
0
100
200
300
400
Mean on-state current, IT(AV) - (A)
Mean on-state current, IT(AV) - (A)
Fig. 8 On-state power loss per arm vs on-state current at
specified conduction angles, square wave 50/60Hz
Fig. 7 On-state power loss per arm vs on-state current at
specified conduction angles, sine wave 50/60Hz
100
90
80
70
60
50
40
30
100
90
80
70
60
50
40
30
20
20
Conduction
Conduction
Angle 30˚
Angle 30˚
10
10
0
0
0
50
100
150
200
250
200
0
50
100
150
200
250
200
Mean on-state current, IT(AV) - (A)
Mean on-state current, IT(AV) - (A)
Fig. 9 Maximum permissible water inlet temperature vs on-
state current at specified conduction angles,
sine wave 50/60Hz
Fig. 10 Maximum permissible water inlet temperature vs on-
state current at specified conduction angles,
square wave 50/60Hz
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MP02TT200
1400
1300
1200
1100
1000
900
Inductive load
800
700
600
500
400
300
Resistive load
200
100
0
200
300
400
0
20
40
60
80
100 0
100
500
Max. water inlet temperature - (˚C)
DC output current - (A)
Fig. 11 50/60Hz single phase bridge DC output current vs power loss and maximum permissible water inlet temperature for
specified values of heatsink thermal resistance
2000
1800
1600
Resistive load
or
1400
Inductive load
1200
1000
800
600
400
200
0
500
100
200
300
400
0
20
40
60
80
100 0
Max. water inlet temperature - (˚C)
DC output current - (A)
Fig. 12 Fig. 11 50/60Hz Three phase bridge DC output current vs power loss and maximum permissible water inlet
temperature for specified values of heatsink thermal resistance
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MP02TT200
PACKAGE DETAILS
Forfurtherpackageinformation, please visitourwebsiteorcontactyournearestCustomerServiceCentre. Alldimensionsinmm, unless
stated otherwise. DO NOT SCALE.
23
23
K2
24
15
5
G2
Ø6.5
13
80
K1
G1
2 Off water connectors
1/4 - 18 NTP (W12)
2
3
1
M6
2.8 X 0.8
23.8
21.6
50.8
94
Water-way plug
2 Off Holes M3 x 0.5
10 deep
Recommended fixings for mounting: M6 socket head cap screws.
Auxiliary gate and cathode leads can be ordered separately.
Nominal weight: 1200g
Module outline type code: MP02-W12
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MP02TT200
PACKAGE DETAILS
Forfurtherpackageinformation, please visitourwebsiteorcontactyournearestCustomerServiceCentre. Alldimensionsinmm, unless
stated otherwise. DO NOT SCALE.
23
23
K2
24
15
5
G2
fl6.5
13
80
K1
G1
2 Off water connectors
1/4 BSP (W13)
2
3
1
M6
2.8 X 0.8
23.8
21.6
50.8
94
Water-way plug
2 Off Holes M3 x 0.5
10 deep
Recommended fixings for mounting: M6 socket head cap screws.
Auxiliary gate and cathode leads can be ordered separately.
Nominal weight: 1200g
Module outline type code: MP02-W13
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MP02TT200
POWER ASSEMBLY CAPABILITY
The Power Assembly group provides support for those customers requiring more than the basic semiconductor switch. Using CAD
design tools the group has developed a flexible range of heatsink / clamping systems in line with advances in device types and the
voltage and current capability of Dynex semiconductors.
An extensive range of air and liquid cooled assemblies is available covering the range of circuit designs in general use today.
HEATSINKS
The Power Assembly group has a proprietary range of extruded aluminium heatsinks. These were designed to optimise the
performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on
request.
For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or customer
service office.
http://www.dynexsemi.com
e-mail: power_solutions@dynexsemi.com
HEADQUARTERS OPERATIONS
DYNEX SEMICONDUCTOR LTD
Doddington Road, Lincoln.
Lincolnshire. LN6 3LF. United Kingdom.
Tel: 00-44-(0)1522-500500
CUSTOMER SERVICE CENTRES
Mainland Europe Tel: +33 (0)1 58 04 91 00. Fax: +33 (0)1 46 38 51 33
North America Tel: 011-800-5554-5554. Fax: 011-800-5444-5444
UK, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020
SALES OFFICES
Fax: 00-44-(0)1522-500550
Mainland Europe Tel: +33 (0)1 58 04 91 00. Fax: +33 (0)1 46 38 51 33
North America Tel: (613) 723-7035. Fax: (613) 723-1518. Toll Free: 1.888.33.DYNEX (39639) /
Tel: (949) 733-3005. Fax: (949) 733-2986.
DYNEX POWER INC.
99 Bank Street, Suite 410,
Ottawa, Ontario, Canada, K1P 6B9
Tel: 613.723.7035
UK, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020
Fax: 613.723.1518
Toll Free: 1.888.33.DYNEX (39639)
These offices are supported by Representatives and Distributors in many countries world-wide.
© Dynex Semiconductor 2001 Publication No. DS5434-1 Issue No. 1.1 April 2001
TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRINTED IN UNITED KINGDOM
Datasheet Annotations:
Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:-
Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started.
Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change.
Advance Information: The product design is complete and final characterisation for volume production is well in hand.
No Annotation: The product parameters are fixed and the product is available to datasheet specification.
This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as
a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves
the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such
methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication
or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury
or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request.
All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners.
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