EC737509J7Q1R [E-CMOS]
80V,70A N-Channel MOSFET;
| 型号： | EC737509J7Q1R |
| 厂家： | 
E-CMOS Corporation |
| 描述： | 80V,70A N-Channel MOSFET |
| 文件： | 总5页 (文件大小：308K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
EC737509J7
80V、70A N-Channel MOSFET
Description
It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with
high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable
device for use in power switching application and a wide variety of other applications.
Features and Benefits:
▓ Advanced MOSFET process technology
▓ Special designed for PWM, load switching and
general purpose applications
▓ Ultra low on-resistance with low gate charge
▓ Fast switching and reverse body recovery
▓ 150℃ operating temperature
Main Product Characteristics:
80V
7.5mꢀ (typ.)
70A
V
DSS
R
DS(on)
I
D
Absolute Maximum Ratings
Symbol
Parameter
Max.
Units
①
①
70
60
I
D
@ TC = 25°C
@ TC = 100°C
Continuous Drain Current, VGS @ 10V
A
ID
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
ꢀ
280
IDM
Power Dissipation
ꢁ
98
W
W/°C
V
P
D
@TC = 25°C
Linear Derating Factor
Drain-Source Voltage
Gate-to-Source Voltage
2.0
75
V
V
E
DS
GS
AS
± 20
375
V
Single Pulse Avalanche Energy @ L=0.3mH
Avalanche Current @ L=0.3mH
mJ
A
50
IAS
Operating Junction and Storage Temperature Range
-55 to + 150
°C
TJ
TSTG
Thermal Resistance
Symbol
Characterizes
Typ.
—
Max.
1.31
62
Units
Junction-to-caseꢁ
ꢂ/W
ꢂ/W
RθJC
Junction-to-ambient (t ꢃ 10s) ④
—
RθJA
E-CMOS Corp. (www.ecmos.com.tw)
Page 1 of 5
5B11N-Rev.F002
EC737509J7
80V、70A N-Channel MOSFET
Electrical Characteristics (TA=25℃ unless otherwise noted)
Symbol
Parameter
Min.
80
—
—
1
Typ.
—
Max.
—
9
Units
Conditions
Drain-to-Source breakdown voltage
V
V
(BR)DSS
V
V
GS = 0V, ID = 250ꢁA
GS=10V,I = 30A
7.5
D
Static Drain-to-Source on-resistance
Gate threshold voltage
mꢀ
V
RDS(on)
ꢂ
= 125
TJ
13
16
3
—
V
DS = VGS, I = 250ꢁA
D
V
GS(th)
ꢂ
= 125
TJ
—
—
—
—
-100
—
—
—
—
—
—
—
—
—
—
1.02
—
—
1
V
DS = 80V,VGS = 0V
Drain-to-Source leakage current
Gate-to-Source forward leakage
ꢁA
nA
IDSS
ꢂ
= 125
TJ
—
50
100
—
—
—
—
—
—
—
—
—
—
—
V
V
GS =20V
—
IGSS
GS = -20V
—
Total gate charge
Q
Q
Q
g
93.6
20.2
33.3
17.3
15.2
52
ID
= 30A,
nC
ns
V
V
DS=30V,
GS = 10V
Gate-to-Source charge
Gate-to-Drain("Miller") charge
Turn-on delay time
Rise time
gs
gd
td(on)
V
GS=10V, VDS=30V,
tr
RL=15ꢀ,
Turn-Off delay time
Fall time
td(off)
RGEN=2.5ꢀ
tf
19
Input capacitance
Output capacitance
Reverse transfer capacitance
C
iss
oss
rss
4373
352
306
V
V
GS = 0V
pF
DS = 25V
C
ƒ = 1MHz
C
Source-Drain Ratings and Characteristics
Symbol
Parameter
Min.
Typ.
Max.
Units
Conditions
Continuous Source Current
(Body Diode)
MOSFET symbol
showing the
—
—
70
A
A
I
S
integral reverse
Pulsed Source Current
(Body Diode)
—
—
280
ISM
p-n junction diode.
V
SD
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
—
—
—
0.85
36
1.3
—
V
I =30A, VGS=0V
S
ns
nC
trr
TJ
= 25°C, I
F
=45A, di/dt =
100A/ꢁs
—
Q
rr
62
E-CMOS Corp. (www.ecmos.com.tw)
Page 2 of 5
5B11N-Rev.F002
EC737509J7
80V、70A N-Channel MOSFET
Test circuits and Waveforms
Notes:
ꢄThe maximum current rating is limited by bond-wires.
ꢀRepetitive rating; pulse width limited by max. junction temperature.
ꢁThe power dissipation PD is based on max. junction temperature, using junction-to-case thermal resistance.
④
The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a
still air environment with TA =25°C
⑤These curves are based on the junction-to-case thermal impedence which is measured with the
device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175°C.
⑥ The maximum current rating is limited by bond-wires.
E-CMOS Corp. (www.ecmos.com.tw)
Page 3 of 5
5B11N-Rev.F002
EC737509J7
80V、70A N-Channel MOSFET
Typical electrical and thermal characteristics
E-CMOS Corp. (www.ecmos.com.tw)
Page 4 of 5
5B11N-Rev.F002
EC737509J7
80V、70A N-Channel MOSFET
Ordering Information
Part Number
Package
PQFN
Marking
Marking Information
7509J7
LLLLL
YYWW
LLLLL is Lot Number
YYWW is date code
EC737509J7Q1R
Mechanical Data：
E-CMOS Corp. (www.ecmos.com.tw)
Page 5 of 5
5B11N-Rev.F002
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