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F3H3 [EDAL]

Silicon Power Rectifiers; 广颖电整流器

F3H3


元器件型号：	F3H3
生产厂家：	EDAL INDUSTRIES, INC.
描述和应用：	Silicon Power Rectifiers 广颖电整流器
PDF文件：	总2页 (文件大小：839K)
下载文档：	下载PDF数据表文档文件
型号参数：F3H3参数

F3H3C

TRANSISTOR | MOSFET | PAIR | COMPLEMENTARY | 30V V(BR)DSS | 2.5A I(D) | SO

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43 ETC

F3H3ND

TRANSISTOR | MOSFET | MATCHED PAIR | N-CHANNEL | 30V V(BR)DSS | 3A I(D) | SO

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32 ETC

F3H3P

TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 2.5A I(D) | SO

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14 ETC

F3H3PD

TRANSISTOR | MOSFET | MATCHED PAIR | P-CHANNEL | 30V V(BR)DSS | 2.5A I(D) | SO

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15 ETC

F3K3

Silicon Power Rectifiers

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21 EDAL

F3L100R07W2E3_B11

EasyPACK module with Trench/Fieldstopp IGBT3 and Emitter Controlled 3 diode and PressFIT / NTC

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725 INFINEON

F3L100R07W2E3B11BOMA1

Insulated Gate Bipolar Transistor, 117A I(C), 650V V(BR)CES, N-Channel, MODULE-34

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2 INFINEON

F3L100R12W2H3_B11

Insulated Gate Bipolar Transistor,

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0 INFINEON

F3L100R12W2H3B11BPSA1

Insulated Gate Bipolar Transistor, 1200V V(BR)CES, N-Channel, MODULE-32

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0 INFINEON

F3L150R07W2E3_B11

EasyPACK module with Trench/Fieldstopp IGBT3 and Emitter Controlled 3 diode and PressFIT / NTC

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691 INFINEON

F3L150R07W2E3_B11

Insulated Gate Bipolar Transistor, 150A I(C), 650V V(BR)CES, N-Channel, MODULE-34

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14 INFINEON

F3L150R07W2E3-B11

150A, 650V, N-CHANNEL IGBT, MODULE-34

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3 INFINEON

F3L150R07W2E3B11BOMA1

Insulated Gate Bipolar Transistor

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0 INFINEON

F3L150R12W2H3_B11

Insulated Gate Bipolar Transistor,

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1 INFINEON

F3L200R07PE4

EasyPACK4 module with Trench/Fieldstopp IGBT4 and Emitter Controlled 4 diode and PressFIT / NTC

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37 INFINEON

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