1N5822 [EIC]
SCHOTTKY BARRIER RECTIFIER DIODES; 肖特基势垒整流二极管
| 型号： | 1N5822 |
| 厂家： | 
EIC DISCRETE SEMICONDUCTORS |
| 描述： | SCHOTTKY BARRIER RECTIFIER DIODES |
| 文件： | 总2页 (文件大小：31K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SCHOTTKY BARRIER
RECTIFIER DIODES
PRV : 20 - 40 Volts
IO : 3.0 Ampere
DO-201AD
FEATURES :
* High current capability
1.00 (25.4)
0.21 (5.33)
MIN.
* High surge current capability
* High reliability
0.19 (4.82)
* High efficiency
* Low power loss
0.375 (9.52)
0.285 (7.24)
* Low cost
* Low forward voltage drop
1.00 (25.4)
0.052 (1.32)
0.048 (1.22)
MIN.
MECHANICAL DATA :
* Case : DO-201AD Molded plastic
* Epoxy : UL94V-O rate flame retardant
* Lead : Axial lead solderable per MIL-STD-202,
Method 208 guaranteed
Dimensions in inches and ( millimeters )
* Polarity : Color band denotes cathode end
* Mounting position : Any
* Weight : 1.1 grams
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 C ambient temperature unless otherw ise specified.
°
Single phase, half w ave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
RATING
SYMBOL 1N5820 1N5821 1N5822 UNIT
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
VRRM
VRMS
VDC
20
14
20
30
21
30
40
28
40
Volts
Volts
Volts
Maximum DC Blocking Voltage
Maximum Average Forward Current
0.375", 9.5mm Lead Length at TL = 95 C
IF(AV
3.0
Amps.
)
°
Peak Forward Surge Current,
8.3ms single half sine wave Superimposed
on rated load (JEDEC Method) TL = 75 C
IFSM
VF
80
0.500
Amps.
Volt.
mA
°
Maximum Forward Voltage at IF = 3.0 Amp.
0.475
0.525
(Note 1)
Maximum Reverse Current at
Ta = 25 C
IR
2.0
°
Rated DC Blocking Voltage (Note 1) Ta = 100 C
IR(H)
20
mA
°
Typical Thermal Resistance (Note 2)
Junction Temperature Range
Storage Temperature Range
R JL
20
C/W
°
q
TJ
- 65 to + 125
- 65 to + 125
C
°
°
TSTG
C
Notes :
(1) Pulse Test : Pulse Width = 300 s, Duty Cycle = 2%.
m
(2) Thermal Resistance from Junction to Lead Vertical PC Board Mounting, 0.5" (12.5mm) Lead Lengths w ith 2.5 in2
(63.5mm2) copper pads.
UPDATE : SEPTEMBER 12, 1998
RATING AND CHARACTERISTIC CURVES ( 1N5820 - 1N5822 )
FIG.1 - FORWARD CURRENT DERATING CURVE
FIG.2 - MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT
100
3.0
80
60
40
2.4
1.8
1.2
0.6
0
20
0
0
20
40
60
80
100
120
140
1
2
4
6
10
20
40 60 100
NUMBER OF CYCLES AT 60Hz
LEAD TEMPERATURE, ( C)
°
FIG.3 - TYPICAL FORWARD CHARACTERISTICS
FIG.4 - TYPICAL REVERSE CHARACTERISTICS
20
10
1N5820
1N5822
T = 100
J
C
°
10
1.0
0.1
1N5821
T
= 25 C
°
1.0
J
T
= 25 C
°
J
PULSE WIDTH = 300
DUTY CYCLE = 1%
s
m
0.01
0
20
40
60
80
100
120
140
PERCENT OF RATED REVERSE
VOLTAGE, (%)
0.1
0.1
0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
FORWARD VOLTAGE, VOLTS
相关型号：
1N5822-B
Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 40V V(RRM), Silicon, DO-201AD, ROHS COMPLIANT, PLASTIC PACKAGE-2
RECTRON
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