RBV608 [EIC]
SILICON BRIDGE RECTIFIERS; 硅桥式整流器
| 型号： | RBV608 |
| 厂家： | 
EIC DISCRETE SEMICONDUCTORS |
| 描述： | SILICON BRIDGE RECTIFIERS |
| 文件： | 总2页 (文件大小：44K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
RBV600 - RBV610 SILICON BRIDGE RECTIFIERS
RBV25
PRV : 50 - 1000 Volts
3.9 0.2
±
Io : 6.0 Amperes
C3
30 0.3
±
4.9 0.2
±
3.2 0.1
Æ
±
FEATURES :
* High current capability
* High surge current capability
* High reliability
* Low reverse current
+
~ ~
* Low forward voltage drop
* High case dielectric strength of 2000 VDC
* Ideal for printed circuit board
* Very good heat dissipation
1.0
0.1
±
MECHANICAL DATA :
* Case : Reliable low cost construction
utilizing molded plastic technique
* Epoxy : UL94V-O rate flame retardant
* Terminals : Plated lead solderable per
MIL-STD-202, Method 208 guaranteed
* Polarity : Polarity symbols marked on case
* Mounting position : Any
7.5
7.5
2.0 0.2
±
10
0.2
0.2
±
0.2
±
±
0.7 0.1
±
Dimensions in millimeters
* Weight : 7.7 grams
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 C ambient temperature unless otherwise specified.
°
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
RBV
600
RBV
601
RBV
602
RBV
604
RBV
606
RBV
608
RBV
610
RATING
UNIT
SYMBOL
50
35
50
100
70
200
140
200
400
280
400
6.0
600
420
600
800
560
800
1000
700
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
VRRM
VRMS
VDC
Volts
Volts
100
1000
Maximum DC Blocking Voltage
Volts
Maximum Average Forward Current Tc = 55 C
IF(AV)
Amps.
°
Peak Forward Surge Current Single half sine wave
Superimposed on rated load (JEDEC Method)
Current Squared Time at t < 8.3 ms.
200
64
IFSM
I2t
Amps.
A2S
1.0
10
Maximum Forward Voltage per Diode at IF = 3.0 Amps.
VF
Volts
Maximum DC Reverse Current
at Rated DC Blocking Voltage
Typical Thermal Resistance (Note 1)
Ta = 25 C
IR
A
m
°
200
8.0
Ta = 100 C
IR(H)
A
m
°
R JC
q
C/W
°
- 40 to + 150
- 40 to + 150
Operating Junction Temperature Range
Storage Temperature Range
TJ
C
C
°
°
TSTG
1. Thermal Resistance from junction to case w ith units mounted on a 2.6"x1.4"x0.06" THK (6.5cm.x3.5cm.x0.15cm.) Al. Plate. Heatsink.
Notes :
UPDATE : MARCH 6, 2000
RATING AND CHARACTERISTIC CURVES ( RBV600 - RBV610 )
FIG.1 - DERATING CURVE FOR OUTPUT
FIG.2 - MAXIMUM NON-REPETITIVE PEAK
RECTIFIED CURRENT
FORWARD SURGE CURRENT
240
6.0
5.0
4.0
3.0
2.0
200
160
TJ = 50 C
°
120
80
HEAT-SINK MOUNTING, Tc
2.6" x 1.4" x 0.06" THK.
8.3 ms SINGLE HALF SINE WAVE
JEDEC METHOD
1.0
40
(6.5cm x 3.5cm x 0.15cm) Al.-PLATE
0
0
0
25
50
75
100
125
150
175
1
2
4
6
10
20
40
60 100
NUMBER OF CYCLES AT 60Hz
CASE TEMPERATURE, ( C)
°
FIG.3 - TYPICAL FORWARD CHARACTERISTICS
FIG.4 - TYPICAL REVERSE CHARACTERISTICS
PER DIODE
PER DIODE
10
100
TJ = 100
C
°
1.0
0.1
10
Pulse Width = 300
1 % Duty Cycle
s
m
1.0
0.1
TJ = 25
C
°
TJ = 25
C
°
0.01
0
40
60
80
100
120
140
20
PERCENT OF RATED REVERSE
VOLTAGE, (%)
0.01
0.4
0.8
1.0
1.2
1.4
1.6
1.8
0.6
FORWARD VOLTAGE, VOLTS
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