EDE5108GASA [ELPIDA]
512M bits DDR-II SDRAM; 位512M DDR- II SDRAM型号: | EDE5108GASA |
厂家: | ELPIDA MEMORY |
描述: | 512M bits DDR-II SDRAM |
文件: | 总45页 (文件大小:467K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
PRELIMINARY DATA SHEET
512M bits DDR-II SDRAM
EDE5104GASA (128M words × 4 bits)
EDE5108GASA (64M words × 8 bits)
Pin Configurations
Description
The EDE5104GA is a 512M bits DDR-II SDRAM
/xxx indicates active low signal.
60-ball FBGA
organized as 33,554,432 words × 4 bits × 4 banks.
1
2
3
7
8
9
The EDE5108GA is a 512M bits DDR-II SDRAM
organized as 16,777,216 words × 8 bits × 4 banks.
A
B
C
D
E
F
G
H
J
NU/ /RDQS
(NC)*
VDD
VSS
VSSQ /DQS VDDQ
It is packaged in 60-ball FBGA package.
DQ6
(NC)*
DQ7
DQS VSSQ
(NC)*
DM/RDQS
(DM)*
Features
VSSQ
• 1.8V power supply
VDDQ
DQ1 VDDQ
VSSQ DQ3
VREF VSS
CKE /WE
VDDQ DQ0 VDDQ
• Double-data-rate architecture: two data transfers per
clock cycle
DQ4
(NC)*
DQ5
DQ2 VSSQ
(NC)*
• Bi-directional, differential data strobe (DQS and
/DQS) is transmitted/received with data, to be used in
capturing data at the receiver
VDDL
VSSDL CK
VDD
NC
/RAS
/CAS
A2
/CK
/CS
A0
• DQS is edge aligned with data for READs: center-
aligned with data for WRITEs
BA0
A10
A3
BA1
A1
NC
• Differential clock inputs (CK and /CK)
VDD
VSS
• DLL aligns DQ and DQS transitions with CK
transitions
A5
A6
A4
VSS
VDD
• Commands entered on each positive CK edge: data
and data mask referenced to both edges of DQS
K
L
A7
A9
A11
NC
A8
• Four internal banks for concurrent operation
• Data mask (DM) for write data
A12
NC
NC
• Burst lengths: 4 only
(Top view)
Note: ( )* marked pins are for EDE5104GA.
• /CAS Latency (CL): 3, 4
• Auto precharge operation for each burst access
• Auto refresh and self refresh modes
• 7.8µs maximum average periodic refresh interval
• 1.8V (SSTL_18 compatible) I/O
A0 to A12
BA0, BA1
DQ0 to DQ7
DQS, /DQS
RDQS, /RDQS
/CS
/RAS, /CAS, /WE
CKE
CK, /CK
DM
VDD
VSS
VDDQ
VSSQ
VREF
VDDL
VSSDL
NC*1
NU*2
Address input
Bank select address
Data-input/output
Differential data strobe
Differential data strobe for read
Chip select
Command input
Clock enable
Differential Clock input
Output mask
Power for internal circuit
Ground for internal circuit
Power for DQ circuit
Ground for DQ circuit
Reference supply voltage
Power for DLL circuit
Ground for DLL circuit
No connection
• Off-Chip-Driver Impedance Adjustment for better
signal quality.
• Programmable RDQS, /RDQS output for the
compatibility to × 4 organization
• /DQS, (/RDQS) can be disabled for single-ended
Data Strobe operation.
• FBGA package is lead free solder (Sn-Ag-Cu)
Not usable
Notes: 1. Not internally connected with die.
2. Don't connect. Internally connected with die.
Document No. E0203E41 (Ver. 4.1)
Date Published February 2006 (K) Japan
URL: http://www.elpida.com
This product became EOL in March, 2004.
Elpida Memory, Inc. 2001-2006
EDE5104GASA, EDE5108GASA
Ordering Information
Mask
version
Organization
(words × bits)
Internal
Banks
Data rate
(Mbps)
Part number
/CAS latency Package
4
3, 4
EDE5104GASA-5A-E
EDE5104GASA-4A-E
533
400
A
128M × 4
64M × 8
4
60-ball FBGA
EDE5108GASA-5A-E
EDE5108GASA-4A-E
533
400
4
3, 4
Part Number
E D E 51 04 G A SA - 4A - E
Elpida Memory
Type
D: Monolithic Device
Lead Free
Product Code
E: DDR-II
Speed
Density / Bank
5A: 533Mbps
4A: 400Mbps
51: 512M /4-bank
Bit Organization
04: x4
08: x8
Package
SA: FBGA
Die Rev.
Voltage, Interface
G: 1.8V, SSTL_18
Preliminary Data Sheet E0203E41 (Ver. 4.1)
2
EDE5104GASA, EDE5108GASA
CONTENTS
Description.....................................................................................................................................................1
Features.........................................................................................................................................................1
Pin Configurations .........................................................................................................................................1
Ordering Information......................................................................................................................................2
Part Number ..................................................................................................................................................2
Electrical Specifications.................................................................................................................................4
Block Diagram ...............................................................................................................................................9
Pin Function.................................................................................................................................................10
Command Operation ...................................................................................................................................12
Simplified State Diagram.............................................................................................................................19
Operation of DDR-II SDRAM.......................................................................................................................20
Package Drawing ........................................................................................................................................42
Recommended Soldering Conditions..........................................................................................................43
Preliminary Data Sheet E0203E41 (Ver. 4.1)
3
EDE5104GASA, EDE5108GASA
Electrical Specifications
• All voltages are referenced to VSS (GND)
• After power up, wait more than 200µs and then execute power on sequence and CBR (Auto) refresh before proper
device operation is achieved.
Absolute Maximum Ratings
Parameter
Symbol
VDD
VDDQ
VIN
Rating
Unit
V
Note
Power supply voltage
Power supply voltage for output
Input voltage
–0.5 to +2.3
–0.5 to +2.3
–0.5 to +2.3
–0.5 to +2.3
0 to +70
–55 to +150
1.0
1
1
1
1
1
1
1
1
V
V
Output voltage
VOUT
TA
V
Operating temperature (ambient)
Storage temperature
Power dissipation
°C
°C
W
mA
TSTG
PD
Short circuit output current
IOUT
50
Note: 1. Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to
the device. This is a stress rating only and functional operation of the device at these or any other
conditions above those indicated in the operational sections of this specification is not implied. Exposure
to absolute maximum rating conditions for extended periods may affect reliability.
Caution
Exposing the device to stress above those listed in Absolute Maximum Ratings could cause
permanent damage. The device is not meant to be operated under conditions outside the limits
described in the operational section of this specification. Exposure to Absolute Maximum Rating
conditions for extended periods may affect device reliability.
Recommended DC Operating Conditions (SSTL_18)
• There is no specific device VDD supply voltage requirement for SSTL_18 compliance. However under all
conditions VDDQ must be less than or equal to VDD.
Parameter
Symbol
min.
Typ.
1.8
max.
1.9
Unit
V
Notes
Supply voltage
VDD
1.7
4
Supply voltage for output
Input reference voltage
Termination voltage
DC input logic high
DC input low
VDDQ
VREF
1.7
1.8
1.9
V
4
0.49 × VDDQ
VREF – 0.04
VREF + 0.125
–0.3
0.50 × VDDQ 0.51 × VDDQ
V
1, 2
3
VTT
VREF
VREF + 0.04
VDDQ + 0.3V
VREF – 0.125
V
VIH (dc)
VIL (dc)
VIH (ac)
VIL (ac)
V
V
AC input logic high
AC input low
VREF + 0.250
V
VREF – 0.250
V
Notes: 1. The value of VREF may be selected by the user to provide optimum noise margin in the system. Typically
the value of VREF is expected to be about 0.5 × VDDQ of the transmitting device and VREF are expected
to track variations in VDDQ.
2. Peak to peak AC noise on VREF may not exceed ±2% VREF (dc).
3. VTT of transmitting device must track VREF of receiving device.
4. VDDQ tracks with VDD, VDDL tracks with VDD. AC parameters are measured with VDD, VDDQ and
VDDL tied together.
Preliminary Data Sheet E0203E41 (Ver. 4.1)
4
EDE5104GASA, EDE5108GASA
DC Characteristics 1 (TA = 0 to +70°C, VDD, VDDQ = 1.8V ± 0.1V)
Parameter
Symbol
Grade
max.
Unit
Test condition
one bank; tRC = tRC (min.) ; tCK = tCK (min.) ; DQ,
DM, and DQS inputs changing twice per clock cycle;
address and control inputs changing once per clock
cycle
Operating current
(ACT-PRE)
-5A
-4A
110
100
IDD0
mA
one bank; Burst = 4; tRC = tRC (min.) ;
CL = 4; tCK = tCK (min.) ; IOUT = 0mA;
address and control inputs changing once per clock
cycle
Operating current
(ACT-READ-PRE)
-5A
-4A
160
140
IDD1
mA
Precharge power-down
standby current
all banks idle; power-down mode; CKE = VIL (max.);
tCK = tCK (min.)
IDD2P
IDD2N
IDD3P
25
mA
mA
mA
/CS = VIH (min.); all banks idle; CKE = VIH (min.);
tCK = tCK (min.) ; address and control inputs changing
once per clock cycle
-5A
-4A
55
45
Idle standby current
Active power-down
standby current
one bank active; power-down mode; CKE = VIL (max.);
tCK = tCK (min.)
30
one bank; active / precharge;/CS = VIH (min.);
CKE = VIH (min.); tRC = tRAS max; tCK = tCK (min.);
DQ, DM, and DQS inputs changing twice per clock
cycle; address and control inputs changing once per
clock cycle
-5A
-4A
65
55
Active standby current
IDD3N
mA
one bank; Burst = 4; burst; address and control inputs
changing once per clock cycle; DQ and DQS outputs
changing twice per clock cycle; CL = 4; tCK = tCK
(min.) ; IOUT = 0mA
Operating current
-5A
-4A
225
175
IDD4R
IDD4W
mA
mA
(Burst read operating)
one bank; Burst = 4; writes; continuous burst; address
and control inputs changing once per clock cycle; DQ
and DQS inputs changing twice per clock cycle; CL = 4;
tCK = tCK (min.)
Operating current
-5A
-4A
225
175
(Burst write operating)
-5A
-4A
270
250
Auto-refresh current
Self-refresh current
IDD5
IDD6
mA
mA
tRC = tRFC (min.)
4
CKE = 0.2V
Four bank interleaving READs (BL4) with auto
precharge, tRC = tRC (min.); Address and control
inputs change during Active, READ, or WRITE
commands.
Operating current
(Bank interleaving)
-5A
-4A
440
380
IDD7
mA
DC Characteristics 2 (TA = 0 to +70°C, VDD, VDDQ = 1.8V ± 0.1V)
Parameter
Symbol
VOH
Unit
V
Notes
Minimum required output pull-up under AC
test load
VTT + 0.603
VTT – 0.603
Maximum required output pull-down under
AC test load
VOL
V
Output timing measurement reference level VOTR
0.5 × VDDQ
+13.4
V
1
Output minimum sink DC current
Output minimum source DC current
IOL
mA
mA
3, 4,
2, 4
IOH
–13.4
Note: 1. The VDDQ of the device under test is referenced.
2. VDDQ = 1.7V; VOUT = 1.42V.
3. VDDQ = 1.9V; VOUT = 0.28V.
4. The DC value of VREF applied to the receiving device is expected to be set to VTT.
Preliminary Data Sheet E0203E41 (Ver. 4.1)
5
EDE5104GASA, EDE5108GASA
Pin Capacitance (TA = 25°C, VDD, VDDQ = 1.8V ± 0.1V)
Notes
Parameter
Symbol
CCK
CIN
Pins
CK
min.
1.5
1.5
3.0
Typ
2.0
2.0
3.5
max.
2.5
Unit
pF
1
1
2
CLK input pin capacitance
Input pin capacitance
Input/output pin capacitance
2.5
pF
CI/O
DQ
4.0
pF
Notes: 1. Matching within 0.25pF.
2. Matching within 0.50pF.
AC Characteristics (TA = 0 to +70°C, VDD, VDDQ = 1.8V ± 0.1V, VSS, VSSQ = 0V)
-5A
-4A
Frequency (Mbps)
533
400
Parameter
Symbol
tAC
min.
–500
max.
+500
+450
0.55
0.55
min.
–600
–500
0.45
0.45
max.
+600
+500
0.55
0.55
Unit
ps
Notes
DQ output access time from CK, /CK
DQS output access time from CK, /CK tDQSCK –450
ps
CK high-level width
CK low-level width
tCH
tCL
0.45
0.45
tCK
tCK
min.
(tCL, tCH)
min.
(tCL, tCH)
CK half period
tHP
ps
Clock cycle time
tCK
tDH
tDS
3750
350
8000
5000
400
8000
ps
ps
ps
DQ and DM input hold time
DQ and DM input setup time
350
400
Control and Address input pulse width
for each input
tIPW
tDIPW
tHZ
0.6
0.6
tCK
tCK
ps
DQ and DM input pulse width for each
input
0.35
0.35
Data-out high-impedance time from
CK,/CK
tAC max.
tAC max.
tAC max.
tAC max.
Data-out low-impedance time from
CK,/CK
tLZ
tAC min.
tAC min.
ps
DQS-DQ skew for DQS and associated
DQ signals
tDQSQ
300
400
350
450
ps
DQ hold skew factor
tQHS
tQH
ps
ps
DQ/DQS output hold time from DQS
tHP – tQHS
WL – 0.25
tHP – tQHS
WL – 0.25
Write command to first DQS latching
transition
tDQSS
WL + 0.25
WL + 0.25
tCK
DQS input high pulse width
tDQSH
tDQSL
tDSS
0.35
0.35
0.2
0.2
2
0.35
0.35
0.2
0.2
2
tCK
tCK
tCK
tCK
tCK
tCK
tCK
tCK
ps
DQS input low pulse width
DQS falling edge to CK setup time
DQS falling edge hold time from CK
tDSH
Mode register set command cycle time tMRD
Write preamble setup time
Write postamble
tWPRES
0
0
tWPST
tWPRE
tIH
0.4
0.25
500
500
0.9
0.4
0.6
0.4
0.25
600
600
0.9
0.4
0.6
Write preamble
Address and control input hold time
Address and control input setup time
Read preamble
tIS
ps
tRPRE
tRPST
1.1
0.6
1.1
0.6
tCK
tCK
Read postamble
Preliminary Data Sheet E0203E41 (Ver. 4.1)
6
EDE5104GASA, EDE5108GASA
-5A
533
min.
45
-4A
400
Frequency (Mbps)
Parameter
Symbol
tRAS
max.
min.
45
max.
Unit
ns
Notes
Active to precharge command
Active to active/auto refresh command
time
tRC
60
65
ns
Active to read or write command delay tRCD
15
20
ns
ns
ns
Precharge command period
Active to auto-precharge delay
tRP
15
20
tRAP
tRCD min.
tRCD min.
Active bank A to active bank B
command period
tRRD
tWR
7.5
10
ns
Write recovery time
15
15
ns
Auto precharge write recovery +
precharge time
(tWR/tCK)+
(tRP/tCK)
(tWR/tCK)+
(tRP/tCK)
tDAL
tCK
1
2
Internal write to read command delay
Exit self refresh to any command
tWTR
tXSC
7.5
10
ns
200
200
tCK
Exit power down to any non-read
command
tXPNR
tXPRD
2
2
tCK
tCK
Exit precharge power down to read
command
6 – AL
6 – AL
Exit active power down to read
command
tXARD
tOIT
2
2
tCK
ns
Output impedance test driver delay
0
32
0
32
Auto refresh to active/auto refresh
command time
tRFC
tREFI
120
120
ns
Average periodic refresh interval
7.8
7.8
µs
Note: 1. For each of the terms above, if not already an integer, round to the next highest integer.
2. AL: Additive Latency.
Preliminary Data Sheet E0203E41 (Ver. 4.1)
7
EDE5104GASA, EDE5108GASA
Test Conditions
tCK
VDD
CLK
VREF
VX
VSWING
/CLK
VSS
tCL
tCH
VDD
VIH
VREF
VIL
VSS
∆t
SLEW = (VIH (ac) – VIL (ac))/∆t
Measurement point
DQ
VTT
RT =25 Ω
Preliminary Data Sheet E0203E41 (Ver. 4.1)
8
EDE5104GASA, EDE5108GASA
Block Diagram
CK
/CK
CKE
Bank 3
Bank 2
Bank 1
A0 to A12, BA0, BA1
Row
address
buffer
and
Memory cell array
Bank 0
refresh
counter
Mode
register
Sense amp.
Column decoder
Column
address
buffer
and
/CS
/RAS
/CAS
/WE
burst
counter
Data control circuit
Latch circuit
DQS, /DQS
RDQS, /RDQS
DM
CK, /CK
DLL
Input & Output buffer
DQ
Preliminary Data Sheet E0203E41 (Ver. 4.1)
9
EDE5104GASA, EDE5108GASA
Pin Function
CK, /CK (input pins)
CK and /CK are differential clock inputs. All address and control input signals are sampled on the crossing of the
positive edge of CK and negative edge of /CK. Output (read) data is referenced to the crossings of CK and /CK
(both directions of crossing).
/CS (input pin)
All commands are masked when /CS is registered High. /CS provides for external bank selection on systems with
multiple banks. /CS is considered part of the command code.
/RAS, /CAS, /WE (input pins)
/RAS, /CAS and /WE (along with /CS) define the command being entered.
A0 to A12 (input pins)
Provided the row address for Active commands and the column address and Auto Precharge bit for Read/Write
commands to select one location out of the memory array in the respective bank.
[Address Pins Table]
Address (A0 to A12)
Part number
EDE5104GA
EDE5108GA
Row address
AX0 to AX12
AX0 to AX12
Column address
AY0 to AY9, AY11, AY12
AY0 to AY9, AY11
A10 (AP) (input pin)
A10 is sampled during a precharge command to determine whether the precharge applies to one bank (A10 = Low)
or all banks (A10 = High). If only one bank is to be precharged, the bank is selected by BA0, BA1. The address
inputs also provide the op-code during mode register set commands.
BA0, BA1 (input pins)
BA0 and BA1 define to which bank an active, read, write or precharge command is being applied. BA0 also
determines if the mode register or extended mode register is to be accessed during a MRS or EMRS cycle.
[Bank Select Signal Table]
BA0
L
BA1
L
Bank 0
Bank 1
H
L
Bank 2
L
H
Bank 3
H
H
Remark: H: VIH. L: VIL.
CKE (input pin)
CKE High activates, and CKE Low deactivates, internal clock signals and device input buffers and output drivers.
Taking CKE Low provides precharge power-down and Self Refresh operation (all banks idle), or active power-down
(row active in any bank). CKE is synchronous for power down entry and exit, and for self refresh entry. CKE is
asynchronous for self refresh exit. CKE must be maintained high throughout read and write accesses. Input buffers,
excluding CK, /CK and CKE are disabled during power-down. Input buffers, excluding CKE, are disabled during self
refresh.
Preliminary Data Sheet E0203E41 (Ver. 4.1)
10
EDE5104GASA, EDE5108GASA
DM (input pin)
DM is an input mask signal for write data. Input data is masked when DM is sampled High coincident with that input
data during a Write access. DM is sampled on both edges of DQS. Although DM pins are input only, the DM
loading matches the DQ and DQS loading. For ×8 configuration, DM function will be disabled when RDQS function
is enabled by EMRS.
DQ (input/output pins)
Bi-directional data bus.
DQS, /DQS (input/output pins)
Output with read data, input with write data for source synchronous operation. Edge-aligned with read data,
centered in write data. Used to capture write data. /DQS can be disabled by EMRS.
RDQS, /RDQS (output pins)
Differential Data Strobe for READ operation only. DM and RDQS functions are switchable by EMRS. These pins
exist only in ×8 configuration. /RDQS output will be disabled when /DQS is disabled by EMRS.
VDD, VSS, VDDQ, VSSQ (power supply)
VDD and VSS are power supply pins for internal circuits. VDDQ and VSSQ are power supply pins for the output
buffers.
VDDL and VSSDL (power supply)
VDDL and VSSDL are power supply pins for DLL circuits.
VREF (Power supply)
SSTL_18 reference voltage: (0.50 ± 0.01) × VDDQ
Preliminary Data Sheet E0203E41 (Ver. 4.1)
11
EDE5104GASA, EDE5108GASA
Command Operation
Command Truth Table
The DDR-II SDRAM recognizes the following commands specified by the /CS, /RAS, /CAS, /WE and address pins.
CKE
Previous Current
BA1,
A12 to
A11
A0 to
A10 A9
Function
Symbol cycle
cycle
/CS /RAS /CAS /WE BA0
Notes
Mode register set
Extended mode register set
Auto (CBR) refresh
Entry self refresh
Exit self refresh
MRS
H
H
H
H
L
×
L
L
L
L
H
L
L
L
L
L
L
L
L
H
×
×
L
L
L
L
×
L
L
L
H
H
H
H
H
×
×
×
L
L
L
L
×
H
H
H
L
L
L
L
H
×
×
×
L
BA0 = 0 and MRS OP Code
BA0 = 1 and EMRS OP Code
1
EMRS
REF
×
L
1
H
L
H
H
×
×
×
×
×
×
×
×
×
×
L
H
×
×
×
×
×
1
SELF
SELFX
PRE
×
1
H
×
×
1
Single bank precharge
Precharge all banks
Bank activate
H
H
H
H
H
H
H
H
H
×
L
BA
×
1, 2
1
PALL
ACT
×
L
×
H
L
BA
BA
BA
BA
BA
×
Row Address
Column L
Column H
Column L
Column H
1, 2
Write
WRIT
WRITA
READ
READA
NOP
×
Column 1, 2, 3
Column 1, 2, 3
Column 1, 2, 3
Column 1, 2, 3
Write with auto precharge
Read
×
L
×
H
H
H
×
Read with auto precharge
No operation
×
×
×
×
×
×
×
×
×
×
×
×
×
×
1
Device deselect
DESL
PDEN
PDEX
×
×
1
Power down mode entry
Power down mode exit
L
×
×
1, 4, 5
1, 4, 5
×
H
×
×
Remark: H = VIH. L = VIL. × = VIH or VIL
Notes: 1. All of the DDR-II SDRAM operations are defined by states of /CS, /WE, /RAS, and /CAS at the positive
rising edge of the clock.
2. Bank Select (BA0, BA1), determine which bank is to be operated upon.
3. Burst read or write cycle may not be terminated.
4. The Power Down Mode does not perform any refresh operations; therefore the device can’t remain in this
mode longer than the Refresh period (tREF) of the device. One clock delay is required for mode entry and
exit.
5. If /CS is low, then when CKE returns high, no command is registered into the chip for one clock cycle.
Preliminary Data Sheet E0203E41 (Ver. 4.1)
12
EDE5104GASA, EDE5108GASA
CKE Truth Table
CKE
Command
Previous
Cycle
Current
Cycle
BA1,BA0,
Current state
Self refresh
Function
/CS /RAS /CAS /WE A12 to A0 Notes
INVALID
H
L
×
×
×
×
×
×
×
×
×
×
1
2
Exit self refresh with device
deselect
H
H
Exit self refresh with no
operation
L
H
L
H
H
H
×
2
2
Illegal
L
L
H
L
H
L
L
×
×
H
Command
Address
Maintain self refresh
INVALID
×
×
×
×
×
×
×
×
×
×
×
×
Power down
All banks idle
×
1
2
Power down mode exit
H
Command
except NOP
ILLEGAL
L
H
L
Address
2
Maintain power down mode
Device deselect
L
L
×
×
×
×
×
×
×
×
H
H
H
3
3
Refer to the current state truth
table
H
H
H
H
H
H
L
L
H
L
L
×
Command
Address
Power down
×
×
×
Register command begin power
down next cycle
L
Command
Address
3
4
Entry self refresh
L
L
L
H
×
×
Refer to operations in the
current state truth table
Any state other
than listed
above
H
×
×
×
Power down entry
ILLEGAL
H
L
L
×
×
×
×
×
×
×
×
×
×
5
×
Remark: H = VIH. L = VIL. × = VIH or VIL
Notes: 1. For the given Current State CKE must be low in the previous cycle.
2. When CKE has a low to high transition, the clock and other inputs are re-enabled asynchronously. The
minimum setup time for CKE (tCES) must be satisfied before any command other than self refresh exit.
3. The inputs (BA1, BA0, A12 to A0) depend on the command that is issued. See the Command Truth Table
for more information.
4. The Auto Refresh, Self Refresh mode, and the Mode Register Set modes can only be entered from the all
banks idle state.
5. Must be a legal command as defined in the Command Truth Table.
Preliminary Data Sheet E0203E41 (Ver. 4.1)
13
EDE5104GASA, EDE5108GASA
Function Truth Table
The following tables show the operations that are performed when each command is issued in each state of the
DDR SDRAM.
Current state
/CS /RAS /CAS /WE Address
Command Operation
Notes
Idle
H
L
L
L
L
L
L
L
L
L
L
L
L
H
L
L
L
L
L
L
L
L
L
L
L
L
H
L
L
L
L
L
L
L
L
L
L
L
L
×
H
H
H
H
H
L
×
H
L
L
L
L
H
H
H
L
L
L
L
×
H
L
L
L
L
H
H
H
L
L
L
L
×
H
L
L
L
L
H
H
H
L
L
L
L
×
×
DESL
NOP
Nop or Power down
H
H
H
L
×
Nop or Power down
ILLEGAL
BA, CA, A10 (AP)
BA, CA, A10 (AP)
BA, CA, A10 (AP)
BA, CA, A10 (AP)
BA, RA
READ
READA
WRIT
WRITA
ACT
1
1
1
1
ILLEGAL
ILLEGAL
L
ILLEGAL
H
L
Row activating
Precharge
L
BA, A10 (AP)
A10 (AP)
PRE
L
L
PALL
REF
Precharge all banks
Auto refresh
Self refresh
L
H
H
L
×
2
2
2
2
L
×
SELF
MRS
L
BA, MRS-OPCODE
Mode register accessing
Extended mode register accessing
Nop
L
L
BA, EMRS-OPCODE EMRS
Bank(s) active
×
×
×
DESL
NOP
H
H
H
H
H
L
H
H
H
L
×
Nop
BA, CA, A10 (AP)
BA, CA, A10 (AP)
BA, CA, A10 (AP)
BA, CA, A10 (AP)
BA, RA
READ
READA
WRIT
WRITA
ACT
Begin Read
Begin Read
Begin Write
L
Begin Write
H
L
ILLEGAL
1
L
BA, A10 (AP)
A10 (AP)
PRE
Precharge
L
L
PALL
REF
Precharge all banks
ILLEGAL
L
H
H
L
×
L
×
SELF
MRS
ILLEGAL
L
BA, MRS-OPCODE
ILLEGAL
L
L
BA, EMRS-OPCODE EMRS
ILLEGAL
Read
×
×
×
DESL
NOP
Continue burst to end -> Row active
Continue burst to end -> Row active
ILLEGAL
H
H
H
H
H
L
H
H
H
L
×
BA, CA, A10 (AP)
BA, CA, A10 (AP)
BA, CA, A10 (AP)
BA, CA, A10 (AP)
BA, RA
READ
READA
WRIT
WRITA
ACT
1
1
1
1
1
1
ILLEGAL
ILLEGAL
L
ILLEGAL
H
L
ILLEGAL
L
BA, A10 (AP)
A10 (AP)
PRE
ILLEGAL
L
L
PALL
REF
ILLEGAL
L
H
H
L
×
ILLEGAL
L
×
SELF
MRS
ILLEGAL
L
BA, MRS-OPCODE
ILLEGAL
L
L
BA, EMRS-OPCODE EMRS
ILLEGAL
Preliminary Data Sheet E0203E41 (Ver. 4.1)
14
EDE5104GASA, EDE5108GASA
Current state
Write
/CS /RAS /CAS /WE Address
Command
DESL
Operation
Note
Continue burst to end
-> Write recovering
H
L
×
×
×
×
×
Continue burst to end
-> Write recovering
H
H
H
NOP
L
L
L
L
L
L
L
L
L
L
L
H
L
L
L
L
L
L
L
L
L
L
L
L
H
H
H
H
L
L
L
L
L
H
H
H
L
L
L
L
×
H
L
L
L
L
H
H
H
L
L
L
L
H
H
L
BA, CA, A10 (AP)
BA, CA, A10 (AP)
BA, CA, A10 (AP)
BA, CA, A10 (AP)
BA, RA
READ
READA
WRIT
WRITA
ACT
ILLEGAL
1
1
1
1
1
1
ILLEGAL
ILLEGAL
L
ILLEGAL
H
L
ILLEGAL
L
BA, A10 (AP)
A10 (AP)
PRE
ILLEGAL
L
L
PALL
REF
ILLEGAL
L
H
H
L
×
ILLEGAL
L
×
SELF
MRS
ILLEGAL
L
BA, MRS-OPCODE
ILLEGAL
L
L
BA, EMRS-OPCODE EMRS
ILLEGAL
Read with
×
H
H
H
H
H
L
×
×
DESL
NOP
Continue burst to end -> Precharging
auto precharge
H
H
H
L
×
Continue burst to end -> Precharging
BA, CA, A10 (AP)
BA, CA, A10 (AP)
BA, CA, A10 (AP)
BA, CA, A10 (AP)
BA, RA
READ
READA
WRIT
WRITA
ACT
ILLEGAL
ILLEGAL
ILLEGAL
ILLEGAL
ILLEGAL
ILLEGAL
ILLEGAL
ILLEGAL
ILLEGAL
ILLEGAL
ILLEGAL
1
1
1
1
1
1
L
H
L
L
BA, A10 (AP)
A10 (AP)
PRE
L
L
PALL
REF
L
H
H
L
×
L
×
SELF
MRS
L
BA, MRS-OPCODE
L
L
BA, EMRS-OPCODE EMRS
Write with auto
Precharge
Continue burst to end
->Write recovering with auto precharge
H
L
×
×
×
×
×
DESL
NOP
Continue burst to end
->Write recovering with auto precharge
H
H
H
L
L
L
L
L
L
L
L
L
L
L
H
H
H
H
L
L
L
L
L
H
H
H
L
L
L
L
H
H
L
BA, CA, A10 (AP)
BA, CA, A10 (AP)
BA, CA, A10 (AP)
BA, CA, A10 (AP)
BA, RA
READ
READA
WRIT
WRITA
ACT
ILLEGAL
ILLEGAL
ILLEGAL
ILLEGAL
ILLEGAL
ILLEGAL
ILLEGAL
ILLEGAL
ILLEGAL
ILLEGAL
ILLEGAL
1
1
1
1
1
1
L
H
L
L
BA, A10 (AP)
A10 (AP)
PRE
L
L
PALL
REF
L
H
H
L
×
L
×
SELF
MRS
L
BA, MRS-OPCODE
L
L
BA, EMRS-OPCODE EMRS
Preliminary Data Sheet E0203E41 (Ver. 4.1)
15
EDE5104GASA, EDE5108GASA
Current state
Precharging
/CS /RAS /CAS /WE Address
Command
DESL
NOP
Operation
Note
H
L
L
L
L
L
L
L
L
L
L
L
L
H
L
L
L
L
L
L
L
L
L
L
L
L
H
L
L
L
L
L
L
L
L
L
L
L
L
×
H
H
H
H
H
L
×
H
L
L
L
L
H
H
H
L
L
L
L
×
H
L
L
L
L
H
H
H
L
L
L
L
×
H
L
L
L
L
H
H
H
L
L
L
L
×
×
Nop -> Enter idle after tRP
H
H
H
L
×
Nop -> Enter idle after tRP
BA, CA, A10 (AP)
BA, CA, A10 (AP)
BA, CA, A10 (AP)
BA, CA, A10 (AP)
BA, RA
READ
READA
WRIT
WRITA
ACT
ILLEGAL
1
1
1
1
1
ILLEGAL
ILLEGAL
L
ILLEGAL
H
L
ILLEGAL
L
BA, A10 (AP)
A10 (AP)
PRE
Nop -> Enter idle after tRP
L
L
PALL
REF
Nop -> Enter idle after tRP
L
H
H
L
×
ILLEGAL
L
×
SELF
MRS
ILLEGAL
L
BA, MRS-OPCODE
BA, EMRS-OPCODE
×
ILLEGAL
L
L
EMRS
DESL
NOP
ILLEGAL
Row activating
×
×
Nop -> Enter bank active after tRCD
H
H
H
H
H
L
H
H
H
L
×
Nop -> Enter bank active after tRCD
BA, CA, A10 (AP)
BA, CA, A10 (AP)
BA, CA, A10 (AP)
BA, CA, A10 (AP)
BA, RA
READ
READA
WRIT
WRITA
ACT
ILLEGAL
1
1
1
1
1
ILLEGAL
ILLEGAL
L
ILLEGAL
H
L
ILLEGAL
L
BA, A10 (AP)
A10 (AP)
PRE
ILLEGAL
L
L
PALL
REF
ILLEGAL
L
H
H
L
×
ILLEGAL
L
×
SELF
MRS
ILLEGAL
L
BA, MRS-OPCODE
BA, EMRS-OPCODE
×
ILLEGAL
L
L
EMRS
DESL
NOP
ILLEGAL
Write recovering
×
×
Nop -> Enter bank active after tWR
Nop -> Enter bank active after tWR
ILLEGAL
H
H
H
H
H
L
H
H
H
L
×
BA, CA, A10 (AP)
BA, CA, A10 (AP)
BA, CA, A10 (AP)
BA, CA, A10 (AP)
BA, RA
READ
READA
WRIT
WRITA
ACT
1
1
ILLEGAL
New write
L
New write
H
L
ILLEGAL
1
1
L
BA, A10 (AP)
A10 (AP)
PRE
ILLEGAL
L
L
PALL
REF
ILLEGAL
L
H
H
L
×
ILLEGAL
L
×
SELF
MRS
ILLEGAL
L
BA, MRS-OPCODE
BA, EMRS-OPCODE
ILLEGAL
L
L
EMRS
ILLEGAL
Preliminary Data Sheet E0203E41 (Ver. 4.1)
16
EDE5104GASA, EDE5108GASA
Current state
/CS /RAS /CAS /WE Address
Command
DESL
Operation
Note
Write recovering
with
H
×
×
×
×
Nop -> Enter bank active after tWR
auto precharge
L
L
L
L
L
L
L
L
L
L
L
L
H
L
L
L
L
L
L
L
L
L
L
L
L
H
H
H
H
H
L
H
L
L
L
L
H
H
H
L
L
L
L
×
H
L
L
L
L
H
H
H
L
L
L
L
H
H
H
L
×
NOP
Nop -> Enter bank active after tWR
ILLEGAL
BA, CA, A10 (AP)
BA, CA, A10 (AP)
BA, CA, A10 (AP)
BA, CA, A10 (AP)
BA, RA
READ
READA
WRIT
WRITA
ACT
1
1
1
1
1
1
ILLEGAL
ILLEGAL
L
ILLEGAL
H
L
ILLEGAL
L
BA, A10 (AP)
A10 (AP)
PRE
ILLEGAL
L
L
PALL
REF
ILLEGAL
L
H
H
L
×
ILLEGAL
L
×
SELF
MRS
ILLEGAL
L
BA, MRS-OPCODE
BA, EMRS-OPCODE
×
ILLEGAL
L
L
EMRS
DESL
NOP
ILLEGAL
Refresh
×
×
Nop -> Enter idle after tRFC
Nop -> Enter idle after tRFC
ILLEGAL
H
H
H
H
H
L
H
H
H
L
×
BA, CA, A10 (AP)
BA, CA, A10 (AP)
BA, CA, A10 (AP)
BA, CA, A10 (AP)
BA, RA
READ
READA
WRIT
WRITA
ACT
ILLEGAL
ILLEGAL
L
ILLEGAL
H
L
ILLEGAL
L
BA, A10 (AP)
A10 (AP)
PRE
ILLEGAL
L
L
PALL
REF
ILLEGAL
L
H
H
L
×
ILLEGAL
L
×
SELF
MRS
ILLEGAL
L
BA, MRS-OPCODE
BA, EMRS-OPCODE
ILLEGAL
L
L
EMRS
ILLEGAL
Mode register
accessing
H
×
×
×
×
DESL
Nop -> Enter idle after tMRD
L
L
L
L
L
L
L
L
L
L
L
L
H
H
H
H
H
L
H
L
L
L
L
H
H
H
L
L
L
L
H
H
H
L
×
NOP
Nop -> Enter idle after tMRD
ILLEGAL
BA, CA, A10 (AP)
BA, CA, A10 (AP)
BA, CA, A10 (AP)
BA, CA, A10 (AP)
BA, RA
READ
READA
WRIT
WRITA
ACT
ILLEGAL
ILLEGAL
L
ILLEGAL
H
L
ILLEGAL
L
BA, A10 (AP)
A10 (AP)
PRE
ILLEGAL
L
L
PALL
REF
ILLEGAL
L
H
H
L
×
ILLEGAL
L
×
SELF
MRS
ILLEGAL
L
BA, MRS-OPCODE
BA, EMRS-OPCODE
ILLEGAL
L
L
EMRS
ILLEGAL
Preliminary Data Sheet E0203E41 (Ver. 4.1)
17
EDE5104GASA, EDE5108GASA
Current state
/CS
H
L
/RAS /CAS /WE Address
Command
DESL
NOP
Operation
Note
Extended Mode
register accessing
×
H
H
H
H
H
L
×
H
L
L
L
L
H
H
H
L
L
L
L
×
×
Nop -> Enter idle after tMRD
Nop -> Enter idle after tMRD
ILLEGAL
H
H
H
L
×
L
BA, CA, A10 (AP)
BA, CA, A10 (AP)
BA, CA, A10 (AP)
BA, CA, A10 (AP)
BA, RA
READ
READA
WRIT
WRITA
ACT
L
ILLEGAL
L
ILLEGAL
L
L
ILLEGAL
L
H
L
ILLEGAL
L
L
BA, A10 (AP)
A10 (AP)
PRE
ILLEGAL
L
L
L
PALL
REF
ILLEGAL
L
L
H
H
L
×
ILLEGAL
L
L
×
SELF
MRS
ILLEGAL
L
L
BA, MRS-OPCODE
BA, EMRS-OPCODE
ILLEGAL
L
L
L
EMRS
ILLEGAL
Remark: H = VIH. L = VIL. × = VIH or VIL
Notes: 1. This command may be issued for other banks, depending on the state of the banks.
2. All banks must be in "IDLE".
3. All AC timing specs must be met.
Preliminary Data Sheet E0203E41 (Ver. 4.1)
18
EDE5104GASA, EDE5108GASA
Simplified State Diagram
Power
Applied
POWER
ON
PRECHARGE
PREALL
SELF
REFRESH
REFS
REFSX
MRS
REFA
MRS
EMRS
AUTO
REFRESH
IDLE
*NOTE
CKEL
CKEH
ACT
ACTIVE
POWER
DOWN
PRECHARGE
POWER
DOWN
CKEH
CKEL
ROW
ACTIVE
WRITE
READ
WRITA
READA
WRITE
READ
READ
WRITA
READA
READA
PRECHARGE
PRECHARGE PRECHARGE
WRITA
READA
PRECHARGE
PREALL
PRECHARGE
Automatic sequence
Command sequence
*Note : Except drive mode activated by EMRS, drive mode should be deactivated by
EMRS to move to an idle state.
Simplified State Diagram
Preliminary Data Sheet E0203E41 (Ver. 4.1)
19
EDE5104GASA, EDE5108GASA
Operation of DDR-II SDRAM
Read and write accesses to the DDR-II SDRAM are burst oriented; accesses start at a selected location and
continue for the fixed burst length of four in a programmed sequence. Accesses begin with the registration of an
Active command, which is then followed by a Read or Write command. The address bits registered coincident with
the active command is used to select the bank and row to be accessed (BA0, BA1 select the bank; A0 to A12 select
the row). The address bits registered coincident with the Read or Write command are used to select the starting
column location for the burst access and to determine if the auto precharge command is to be issued. Prior to
normal operation, the DDR-II SDRAM must be initialized. The following sections provide detailed information
covering device initialization; register definition, command descriptions and device operation.
Power On and Initialization
DDR-II SDRAMs must be powered up and initialized in a predefined manner. Operational procedures other than
those specified may result in undefined operation. Power must first be applied to VDD, then to VDDQ, and finally to
VREF (and to the system VTT). VTT must be applied after VDDQ to avoid device latch-up, which may cause
permanent damage to the device. VREF can be applied any time after VDDQ, but is expected to be nominally
coincident with VTT. The DQ and DQS outputs are in the High-Z state, where they remain until driven active in
normal operation (by a read access). After all power supply, reference voltages, and the clocks are stable, the DDR-
II SDRAM requires a 200µs delay prior to applying an executable command.
Once the 200µs delay has been satisfied, a Deselect or NOP command should be applied, and CKE must be
brought High. Following the NOP command, a Precharge ALL command must be applied. Next a mode register set
command must be issued for the extended mode register, to enable the DLL. Then a mode register set command
must be issued for the mode register, to reset the DLL and to program the operating parameters. 200 clock cycles
are required between the DLL reset and any read command. A Precharge ALL command should be applied, placing
the device in the “all banks idle” state.
Once in the idle state, two Auto Refresh cycles must be performed. Additionally, a mode register set command for
the mode register, with the reset DLL bit deactivated (i.e. to program operating parameters without resetting the DLL)
must be performed. Following these cycles, the DDR-II SDRAM is ready for normal operation. Failure to follow
these steps may lead to unpredictable start-up modes.
Power-Up and Initialization Sequence
The following sequence is required for power-up and Initialization.
1. Apply power and attempt to maintain CKE at a low state (all other inputs may be undefined.)
Apply VDD before or at the same time as VDDQ.
Apply VDDQ before or at the same time as VTT and VREF.
2. Start clock and maintain stable condition for a minimum of 200µs.
3. The minimum of 200µs after stable power and clock (CK, /CK), apply NOP and take CKE High.
4. Wait tRFC.
5. Issue precharge commands for all banks of the device.
6. Issue EMRS to enable DLL. (To issue DLL Enable command, provide Low to A0, High to BA0 and Low to all of
the rest address pins, A1 to A11 and BA1)
7. Issue a mode register set command for DLL reset. The additional 200 cycles of clock input is required to lock the
DLL. (To issue DLL reset command, provide High to A8 and Low to BA0)
8. Issue precharge commands for all banks of the device.
9. Issue 2 or more auto-refresh commands.
10.Issue a mode register set command with Low to A8 to initialize device operation.
11.Carry out OCD impedance adjustment (Follow “OCD Flow Chart” in the chapter of Off-Chip Driver (OCD)
Impedance Adjustment). Whenever issue extended mode register set command for OCD, keep previous setting
of A0 to A6, A0 to A12 and BA1
/CK
CK
Any
command
Command
PALL
2 cycles (min.) 2 cycles (min.) 2 cycles (min.)
DLL reset
EMRS
MRS
PALL
REF
MRS
EMRS
EMRS
REF
tRP
tRFC
tRFC
tMRD
2 cycles (min.)
Follow OCD
Flowchart
DLL enable
OCD mode set
OCD calibration
exit
200 cycles (min)
Power up and Initialization Sequence
Preliminary Data Sheet E0203E41 (Ver. 4.1)
20
EDE5104GASA, EDE5108GASA
Programming the Mode Register
For application flexibility, burst type, /CAS latency, DLL reset function are user defined variables and must be
programmed with a Mode Register Set (MRS) command. Additionally, DLL disable function, additive /CAS latency,
and variable data-output impedance adjustment are also user defined variables and must be programmed with an
Extended Mode Register Set (EMRS) command. Re-executing the MRS and EMRS Commands can alter contents
of the MRS and EMRS. If the user chooses to modify only a subset of the MRS or EMRS variables, all variables
must be redefined when the MRS or EMRS commands are issued.
After initial power up, the both MRS and EMRS Commands must be issued before read or write cycles may begin.
All four banks must be in a precharged state and CKE must be high at least one cycle before the Mode Register Set
Command can be issued. Either MRS or EMRS Commands are activated by the low signals of /CS, /RAS, /CAS and
/WE at the positive edge of the clock. When the bank address 0 (BA0) is low, the DDR-II SDRAM enables the MRS
command. When the bank address 0 (BA0) is high, the DDR-II SDRAM enables the EMRS command. The address
input data during this cycle defines the parameters to be set as shown in the MRS and EMRS table. A new
command may be issued after the mode register set command cycle time (tMRD). MRS, EMRS and Reset DLL do
not affect array contents, which means reinitialization including those can be executed any time after power-up
without affecting array contents.
DDR-II SDRAM Mode Register Set [MRS]
The mode register stores the data for controlling the various operating modes of DDR-II SDRAM. It controls /CAS
latency, burst sequence, test mode, DLL reset and various vendor specific options to make DDR-II SDRAM useful
for various applications. The default value of the mode register is not defined, therefore the mode register must be
written after power-up for proper operation. The mode register is written by asserting low on /CS, /RAS, /CAS, /WE
and BA0, while controlling the state of address pins A0 to A12. The DDR-II SDRAM should be in all bank precharge
with CKE already high prior to writing into the mode register. The mode register set command cycle time (tMRD) is
required to complete the write operation to the mode register. The mode register contents can be changed using the
same command and clock cycle requirements during normal operation as long as all banks are in the precharge
state. The mode register is divided into various fields depending on functionality. Burst address sequence type is
defined by A3, and, /CAS latency is defined by A4 to A6. The DDR-II doesn’t support half clock latency mode. A7 is
used for test mode. A8 is used for DLL reset. A7 must be set to low for normal MRS operation. Refer to the table for
specific codes.
BA1 BA0 A12 A11 A10 A9 A8 A7 A6 A5 A4 A3 A2 A1 A0
Address field
0*
0
0*
tWR
DLL TM /CAS latency BT Burst length*2
Mode register
Burst length
A8
0
DLL reset
No
A7
0
Mode
Normal
Test
A3
0
Burst type
Sequential
Interleave
A2
0
A1
1
A0
0
BL
4
1
Yes
1
1
tWR
A11 A10 A9
/CAS latency
BA0
0
MRS mode
MRS
tWR
Reserved
2
A6
0
A5
0
A4
0
Latency
Reserved
0
0
0
0
1
1
1
1
0
0
1
1
0
0
1
1
0
1
0
1
0
1
0
1
1
EMRS
0
0
1
Reserved
Reserved
3
3
0
1
0
4
0
1
1
Reserved
Reserved
Reserved
Reserved
1
0
0
4
1
0
1
Reserved
Reserved
Reserved
1
1
0
1
1
1
*BA1 and A12 are reserved for future use and must be programmed to 0 when setting the mode register.
Mode Register Set (MRS)
Preliminary Data Sheet E0203E41 (Ver. 4.1)
21
EDE5104GASA, EDE5108GASA
DDR-II SDRAM Extended Mode Register Set [EMRS]
The extended mode register stores the data for enabling or disabling the DLL, output driver strength and additive
latency. The default value of the extended mode register is not defined, therefore the extended mode register must
be written after power-up for proper operation. The extended mode register is written by asserting low on /CS, /RAS,
/CAS, /WE and High on BA0, while controlling the states of address pins A0 to A12. The DDR-II SDRAM should be
in all bank precharge with CKE already high prior to writing into the extended mode register. The mode register set
command cycle time (tMRD) must be satisfied to complete the write operation to the extended mode register. Mode
register contents can be changed using the same command and clock cycle requirements during normal operation
as long as all banks are in the precharge state. A0 is used for DLL enable or disable. A1 is used for enabling a half
strength data-output driver. A3 to A5 determines the additive latency, A7 to A9 are used for OCD control, A10 is
used for DQS disable and A11 is used for RDQS enable.
DLL Enable/Disable
The DLL must be enabled for normal operation. DLL enable is required during power up initialization, and upon
returning to normal operation after having the DLL disabled. The DLL is automatically disabled when entering self
refresh operation and is automatically re-enabled upon exit of self refresh operation. Any time the DLL is enabled
(and subsequently reset), 200 clock cycles must occur before a Read command can be issued to allow time for the
internal clock to be synchronized with the external clock. Failing to wait for synchronization to occur may result in a
violation of the tAC or tDQSCK parameters.
BA1 BA0 A12 A11 A10 A9 A8 A7 A6 A5 A4 A3 A2 A1 A0
Address field
0*1
1
0*1 RDQS /DQS OCD program RFU Additive latency RFU D.I.C DLL
Extended mode register
A10 /DQS disable
0
1
Enable
Disable
A11 RDQS enable
A0
0
DLL enable
Enable
0
1
Disable
Enable
1
Disable
Additive latency
BA0
0
MRS mode
MRS
A5
0
A4
0
A3
0
Latency
0
1
EMRS
0
0
1
1
Driver impedance adjustment
0
1
0
2
Operation
OCD calibration mode exit
Driver(1) DQ High
Driver(0) DQ Low
Adjust mode
A9
0
A8
0
A7
0
0
1
1
3
1
0
0
Reserved
Reserved
Reserved
Reserved
0
0
1
1
0
1
0
1
0
1
1
0
1
0
0
1
1
1
1
1
1
Reserved
*Refer to the chapter "Off-chip Driver (OCD) impedance Adjustment"
for detailed information
Driver strength control
Output Driver
Driver
Size
A1
0
Impedance Control
Normal
100%
1
Weak
Reserved
*BA1 and A12 to A15 are reserved for future use, and must be programmed to 0 when setting the extended mode register.
Extended Mode Register Set (EMRS)
Preliminary Data Sheet E0203E41 (Ver. 4.1)
22
EDE5104GASA, EDE5108GASA
Off-Chip Driver (OCD) Impedance Adjustment
DDR-II SDRAM supports driver calibration feature and the “OCD Flow Chart ” is an example of sequence. Every
calibration mode command should be followed by “OCD calibration mode exit” before any other command being
issued. MRS should be set before entering OCD impedance adjustment.
Start
EMRS: OCD calibration mode exit
EMRS: Drive(1)
DQ ; High
EMRS: Drive(0)
DQ ; Low
ALL OK
ALL OK
Test
Test
Need calibration
Need calibration
EMRS: OCD calibration mode exit
EMRS: OCD calibration mode exit
EMRS :
EMRS :
Enter Adjust Mode
Enter Adjust Mode
BL=4 code input to all DQs
Inc, Dec, or NOP
BL=4 code input to all DQs
Inc, Dec, or NOP
EMRS: OCD calibration mode exit
EMRS: OCD calibration mode exit
EMRS: OCD calibration mode exit
End
OCD Flow Chart
Preliminary Data Sheet E0203E41 (Ver. 4.1)
23
EDE5104GASA, EDE5108GASA
Extended Mode Register Set for OCD Impedance Adjustment
OCD impedance adjustment can be done using the following EMRS mode. In drive mode, all outputs are driven out
by DDR-II SDRAM. In drive (1) mode, all DQ signals are driven high. In drive (0) mode, all DQ signals are driven
low.
In adjust mode, BL = 4 of operation code data must be used.
OCD must used to control driver impedance within 18Ω ± 3Ω range.
[OCD Mode Set Program]
A9
0
A8
0
A7
0
Operation
OCD calibration mode exit
Drive (1) DQ High
Drive (0) DQ Low
Adjust mode
0
0
1
0
1
0
1
0
0
1
1
1
Reserved
OCD Impedance Adjustment
OCD impedance adjustment can be done using “EMRS Adjust mode” and input operation code patterns as the table
of “OCD Adjustment Program”. To adjust output driver impedance, controllers must issue “Adjust mode” command
using an EMRS command first, after that drive 4 bits of burst code information to DDR-II SDRAM. For this operation,
controllers must drive all DQs to each device. Driver impedance in each DDR-II SDRAM device is adjusted for all
DQs simultaneously. The maximum step count for adjustment is 16 and when the limit is reached, further increment
or decrement has no effect. Default setting can be any step within the 16 steps range.
[OCD Adjustment Program]
4bits burst data inputs to all DQs
Operation
DT0
0
DT1
0
DT2
0
DT3
0
Pull-up driver strength
NOP
Pull-down driver strength
NOP
0
0
0
1
Increase by 1 step
Decrease by 1 step
NOP
NOP
0
0
1
0
NOP
0
1
0
0
Increase by 1 step
Decrease by 1 step
Reserved
1
0
0
0
NOP
0
1
0
1
Reserved
0
1
1
0
Reserved
Reserved
1
0
0
1
Reserved
Reserved
1
0
1
0
Reserved
Reserved
Other combinations
Reserved
Preliminary Data Sheet E0203E41 (Ver. 4.1)
24
EDE5104GASA, EDE5108GASA
For proper operation of adjust mode, WL = RL − 1 = AL + CL − 1 clocks and tDS/tDH should be met as the “Output
Impedance Control Register Set Cycle”. For input data pattern for adjustment, DT0 to DT3 is a fixed order and not
affected by MRS addressing mode (i.e. sequential or interleave).
/CK
CK
Command
EMRS
NOP
WL
NOP
NOP
NOP
NOP
tWR
EMRS
NOP
DQS, /DQS
tDS tDH
DT0
DQ_in
DT1
DT2
DT3
OCD adjust mode
OCD calibration mode exit
Output Impedance Control Register Set Cycle
Drive Mode
Drive mode, both drive (1) and drive (0), is used for controllers to measure DDR-II SDRAM Driver impedance before
OCD impedance adjustment. In this mode, all outputs are driven out tOIT after “Enter drive mode” command and all
output drivers are turned-off tOIT after “OCD calibration mode exit” command as the ”Output Impedance
Measurement/Verify Cycle”.
/CK
CK
Command
EMRS
NOP
NOP
NOP
EMRS
High-Z
High-Z
DQS, /DQS
DQs High for drive (1)
DQs Low for drive (0)
DQ
tOIT
(0 to 32ns)
tOIT
(0 to 32ns)
Enter drivemode
OCD Calibration mode exit
Output Impedance Measurement/Verify Cycle
Preliminary Data Sheet E0203E41 (Ver. 4.1)
25
EDE5104GASA, EDE5108GASA
Bank Activate Command [ACT]
The bank activate command is issued by holding /CAS and /WE High with /CS and /RAS Low at the rising edge of
the clock. The bank addresses BA0 and BA1, are used to select the desired bank. The row address A0 through
A12 is used to determine which row to activate in the selected bank. The Bank activate command must be applied
before any read or write operation can be executed. Immediately after the bank active command, the DDR-II
SDRAM can accept a read or write command on the following clock cycle. If a R/W command is issued to a bank
that has not satisfied the tRCD (min.) specification, then additive latency must be programmed into the device to
delay when the R/W command is internally issued to the device. The additive latency value must be chosen to
assure tRCD (min.) is satisfied. Additive latencies of 0, 1 and 2 are supported. Once a bank has been activated it
must be precharged before another bank activate command can be applied to the same bank. The bank active and
precharge times are defined as tRAS and tRP, respectively. The minimum time interval between successive bank
activate commands to the same bank is determined by the /RAS cycle time of the device (tRC), which is equal to
tRAS + tRP. The minimum time interval between successive bank activate commands to the different bank is
determined by (tRRD).
T0
T1
T2
T3
Tn
Tn+1
Tn+2
PRE
Tn+3
/CK
CK
Posted
READ
Posted
READ
Command
ACT
ACT
PRE
ACT
tRCD(min.)
Address
ROW: 0
COL: 0
ROW: 1
tCCD
COL: 1
ROW: 0
Bank0 Read begins
Additive latency (AL)
tRCD =1
tRRD
tRAS
tRP
tRC
Bank0
Active
Bank1
Active
Bank0
Precharge
Bank1
Precharge Active
Bank0
Bank Activate Command Cycle (tRCD = 3, AL = 2, tRP = 3, tRRD = 2, tCCD = 2)
Preliminary Data Sheet E0203E41 (Ver. 4.1)
26
EDE5104GASA, EDE5108GASA
Read and Write Access Modes
After a bank has been activated, a read or write cycle can be executed. This is accomplished by setting /RAS High,
/CS and /CAS Low at the clock’s rising edge. /WE must also be defined at this time to determine whether the access
cycle is a read operation (/WE high) or a write operation (/WE low).
The DDR-II SDRAM provides a fast column access operation. A single read or write Command will initiate a serial
read or write operation on successive clock cycles. The boundary of the burst cycle is strictly restricted to specific
segments of the page length. For example, the 8M bits × 4 I/O × 4 Banks chip has a page length of 2048 bits
(defined by CA0 to CA9, CA11). The page length of 2048 is divided into 512 uniquely addressable boundary
segments (4 bits each). A 4 bits burst operation will occur entirely within one of the 512 groups beginning with the
column address supplied to the device during the read or write Command (CA0 to CA9, CA11). The second, third
and fourth access will also occur within this group segment, however, the burst order is a function of the starting
address, and the burst sequence.
A new burst access must not interrupt the previous 4-bit burst operation. The minimum /CAS to /CAS delay is
defined by tCCD, and is a minimum of 2 clocks for read or write cycles.
Posted /CAS
Posted /CAS operation is supported to make command and data bus efficient for sustainable bandwidths in DDR-II
SDRAM. In this operation, the DDR-II SDRAM allows a /CAS read or write command to be issued immediately after
the /RAS bank activate command (or any time during the /RAS-/CAS-delay time, tRCD, period). The command is
held for the time of the additive latency (AL) before it is issued inside the device. The Read Latency (RL) is
controlled by the sum of AL and the /CAS latency (CL). Therefore if a user chooses to issue a R/W command before
the tRCD (min), then AL (greater than 0) must be written into the EMRS. The Write Latency (WL) is always defined
as RL − 1 (read latency −1) where read latency is defined as the sum of additive latency plus /CAS latency
(RL=AL+CL).
-1
0
1
2
3
4
5
6
7
8
9
10
11
12
/CK
CK
Command
DQS, /DQS
DQ
READ
ACT
WRIT
WL = RL n–1 = 4
AL = 2
CL = 3
> tRCD
=
RL = AL + CL = 5
out0 out1 out2 out3
in0 in1 in2 in3
> tRAC
=
Read followed by a write to the same bank
[AL = 2 and CL = 3, RL = (AL + CL) = 5, WL = (RL - 1) = 4]
-1
0
1
2
3
4
5
6
7
8
9
10
11
12
/CK
CK
AL = 0
READ
Command
DQS, /DQS
DQ
ACT
WRIT
CL = 3
WL = RL n–1 = 2
> tRCD
=
RL = AL + CL = 3
out0 out1 out2 out3
in0 in1 in2 in3
> tRAC
=
Read followed by a write to the same bank
[AL = 0 and CL = 3, RL = (AL + CL) = 3, WL = (RL - 1) = 2]
Preliminary Data Sheet E0203E41 (Ver. 4.1)
27
EDE5104GASA, EDE5108GASA
Fixed 4 bits Burst Mode Operation
Burst mode operation is used to provide a constant flow of data to memory locations (write cycle), or from memory
locations (read cycle). The parameters that define how the burst mode will operate are burst sequence and burst
length. Unlike the DDR-I SDRAM, DDR-II SDRAM supports 4 bits burst mode only. The burst type, either
sequential or interleaved, is programmable and defined by the address bit 3 (A3) of the MRS, which is similar to the
DDR-I SDRAM operation. Seamless burst read or write operations are supported.
Unlike DDR-I devices, interruption of a burst read or write operation is prohibited. Therefore the burst stop command
is not supported on DDR-II SDRAM devices.
[Burst Length and Sequence]
Burst length
Starting address (a1, a0)
Sequential addressing (decimal)
Interleave addressing (decimal)
00
01
10
11
0, 1, 2, 3
1, 2, 3, 0
2, 3, 0, 1
3, 0, 1, 2
0, 1, 2, 3
1, 0, 3, 2
2, 3, 0, 1
3, 2, 1, 0
4
Note: Page length is a function of I/O organization and column addressing
32M bits × 4 organization (CA0 to CA9, CA11, CA12); Page Length = 2048 bits
16M bits × 8 organization (CA0 to CA9, CA11); Page Length = 1024 bits
Preliminary Data Sheet E0203E41 (Ver. 4.1)
28
EDE5104GASA, EDE5108GASA
Burst Read Command [READ]
The Burst Read command is initiated by having /CS and /CAS low while holding /RAS and /WE high at the rising
edge of the clock. The address inputs determine the starting column address for the burst. The delay from the start
of the command to when the data from the first cell appears on the outputs is equal to the value of the read latency
(RL). The data strobe output (DQS) is driven low 1 clock cycle before valid data (DQ) is driven onto the data bus.
The first bit of the burst is synchronized with the rising edge of the data strobe (DQS). Each subsequent data-out
appears on the DQ pin in phase with the DQS signal in a source synchronous manner.
The RL is equal to an additive latency (AL) plus /CAS latency (CL). The CL is defined by the mode register set
(MRS), similar to the existing SDR and DDR-I SDRAMs. The AL is defined by the extended mode register set
(EMRS).
T0
T1
T2
T3
T4
T5
T6
T7
T8
/CK
CK
Posted
READ
NOP
NOP
NOP
NOP
NOP
<tDQSCK
NOP
NOP
NOP
Command
=
DQS, /DQS
AL = 2
CL = 3
RL = 5
out0 out1 out2 out3
DQ
Burst Read Operation (RL = 5 (AL = 2, CL = 3))
T0
T1
T2
T3
T4
T5
T6
T7
T8
/CK
CK
READ
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
Command
<tDQSCK
=
DQS, /DQS
DQ
CL = 3
RL = 3
Out0 Out1 Out2 Out3
Burst Read Operation (RL = 3 (AL = 0 and CL = 3))
Preliminary Data Sheet E0203E41 (Ver. 4.1)
29
EDE5104GASA, EDE5108GASA
T0
T1
T3
T4
T5
T6
T7
T8
T9
/CK
CK
Posted
READ
Posted
WRIT
NOP
NOP
NOP
NOP
NOP
NOP
NOP
Command
tRTW (Read to Write = 4 clocks)
DQS, /DQS
RL = 5
WL = RL - 1 = 4
out0 out1 out2 out3
in0
in1
in2
in3
DQ
Burst Read followed by Burst Write (RL = 5, WL = RL-1 = 4)
The minimum time from the burst read command to the burst write command is defined by a read-to-write-turn-
around-time, which is 4 clocks.
T0
T1
T2
T3
T4
T5
T6
T7
T8
/CK
CK
Posted
READ
Posted
READ
NOP
NOP
NOP
NOP
NOP
NOP
NOP
Command
DQS, /DQS
AL = 2
CL = 3
RL = 5
Out0 Out1 Out2 Out3 Out4 Out5 Out6
DQ
Seamless Burst Read Operation (RL = 5, AL = 2, and CL = 3)
Enabling a read command at every other clock supports the seamless burst read operation. This operation is
allowed regardless of same or different banks as long as the banks are activated.
Preliminary Data Sheet E0203E41 (Ver. 4.1)
30
EDE5104GASA, EDE5108GASA
Burst Write Command [WRIT]
The Burst Write command is initiated by having /CS, /CAS and /WE low while holding /RAS high at the rising edge of
the clock. The address inputs determine the starting column address. Write latency (WL) is defined by a read
latency (RL) minus one and is equal to (AL + CL −1). A data strobe signal (DQS) should be driven low (preamble)
one clock prior to the WL. The first data bit of the burst cycle must be applied to the DQ pins at the first rising edge
of the DQS following the preamble. The tDQSS specification must be satisfied for write cycles. The subsequent
burst bit data are issued on successive edges of the DQS until the burst length of 4 is completed. When the burst
has finished, any additional data supplied to the DQ pins will be ignored. The DQ Signal is ignored after the burst
write operation is complete. The time from the completion of the burst write to bank precharge is the write recovery
time (tWR).
T0
T1
T2
T3
T4
T5
T6
T7
T9
/CK
CK
Posted
WRIT
NOP
<tDQSS
NOP
NOP
NOP
NOP
NOP
NOP
PRE
Command
Completion of
the Burst Write
=
DQS, /DQS
DQ
>tWR
WL = RL −1 = 4
=
in0
in1
in2
in3
Burst Write Operation (RL = 5, WL = 4, tWR = 3 (AL=2, CL=3))
T0
T1
T2
T3
T4
T5
T6
T7
T9
/CK
CK
WRIT
NOP
NOP
NOP
<tDQSS
NOP
NOP
PRE
NOP
Command
ACT
Completion of
the Burst Write
=
DQS, /DQS
DQ
>tWR
>tRP
WL = RL –1 = 2
=
=
in0
in1
in2
in3
Burst Write Operation (RL = 3, WL = 2, tWR = 2 (AL=0, CL=3))
Preliminary Data Sheet E0203E41 (Ver. 4.1)
31
EDE5104GASA, EDE5108GASA
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
/CK
CK
Write to Read = CL + 1 + tWTR (2) = 6
NOP NOP
NOP
Posted
READ
NOP
NOP
NOP
NOP
NOP
Command
DQS, /DQS
DQ
AL = 2
CL = 3
WL = RL –1 = 4
RL = 5
>tWTR
=
out0 out1 out2 out3
Burst Write followed by Burst Read (RL = 5 (AL=2, CL=3), WL = 4, tWTR = 2)
The minimum number of clock from the burst write command to the burst read command is CL + 1 + a write to-read-
turn-around-time (tWTR). This tWTR is not a write recovery time (tWR) but the time required to transfer the 4bit
write data from the input buffer into sense amplifiers in the array.
T0
T1
T2
T3
T4
T5
T6
T7
T8
/CK
CK
Posted
WRIT
Posted
WRIT
Command
NOP
NOP
NOP
NOP
NOP
NOP
NOP
DQS, /DQS
WL = RL − 1 = 4
in 0 in 1 in 2 in 3 in 4 in 5 in 6 in 7
DQ
Seamless Burst Write Operation (RL = 5, WL = 4)
Enabling a write command every other clock supports the seamless burst write operation. This operation is allowed
regardless of same or different banks as long as the banks are activated.
Preliminary Data Sheet E0203E41 (Ver. 4.1)
32
EDE5104GASA, EDE5108GASA
Write data mask
One write data mask (DM) pin for each 8 data bits (DQ) will be supported on DDR-II SDRAMs, Consistent with the
implementation on DDR-I SDRAMs. It has identical timings on write operations as the data bits, and though used in
a uni-directional manner, is internally loaded identically to data bits to insure matched system timing. DM is not used
during read cycles.
T1
in
T2
T3
in
T4
in
T5
T6
DQS
/DQS
DQ
DM
in
in
in
in
in
Write mask latency = 0
Data Mask Timing
[tDQSS(min.)]
/CK
CK
tWR
WRIT
NOP
NOP
NOP
Command
NOP
NOP
tDQSS
DQS, /DQS
DQ
in0
in2 in3
DM
tDQSS
[tDQSS(max.)]
DQS, /DQS
DQ
in0
in2 in3
DM
Data Mask Function, WL = 3, AL = 0 shown
Preliminary Data Sheet E0203E41 (Ver. 4.1)
33
EDE5104GASA, EDE5108GASA
Precharge Command [PRE]
The precharge command is used to precharge or close a bank that has been activated. The precharge command is
triggered when /CS, /RAS and /WE are low and /CAS is high at the rising edge of the clock. The precharge
command can be used to precharge each bank independently or all banks simultaneously. Three address bits A10,
BA0 and BA1 are used to define which bank to precharge when the command is issued.
[Bank Selection for Precharge by Address Bits]
A10
L
BA0
L
BA1
L
Precharged Bank(s)
Bank 0 only
L
H
L
Bank 1 only
L
L
H
Bank 2 only
L
H
H
Bank 3 only
H
×
×
All banks 0 to 3
Remark: H: VIH, L: VIL, ×: VIH or VIL
Burst Read Operation Followed by Precharge
Minimum read to precharge command spacing to the same bank = AL + 2 clocks
For the earliest possible precharge, the precharge command may be issued on the rising edge that is
“Additive latency (AL) + 2 clocks” after a Read command. A new bank active (command) may be issued to the same
bank after the RAS precharge time (tRP). A precharge command cannot be issued until tRAS is satisfied.
T0
T1
T2
T3
T4
T5
T6
T7
T8
/CK
CK
Posted
READ
NOP
AL + 2 clocks
NOP
PRE
NOP
NOP
NOP
ACT
NOP
Command
DQS, /DQS
> t
RP
=
AL = 1
CL = 3
RL = 4
out0 out1 out2 out3
CL = 3
DQ
> t
RAS
=
Burst Read Operation Followed by Precharge (RL = 4 (AL=1, CL=3))
T0
T1
T2
T3
T4
T5
T6
T7
T8
/CK
CK
Posted
READ
ACT
NOP
NOP
AL + 2 clocks
NOP
PRE
NOP
NOP
NOP
Command
DQS, /DQS
> t
RP
=
AL = 2
CL = 3
RL = 5
out0 out1 out2 out3
CL = 3
DQ
> t
RAS
=
Burst Read Operation Followed by Precharge (RL = 5 (AL=2, CL=3))
Preliminary Data Sheet E0203E41 (Ver. 4.1)
34
EDE5104GASA, EDE5108GASA
T0
T1
T2
T3
T4
T5
T6
T7
T8
/CK
CK
Posted
READ
NOP
NOP
AL + 2 Clocks
NOP
PRE
NOP
NOP
NOP
ACT
Command
DQS, /DQS
DQ
> t
RP
=
AL = 2
CL = 4
RL = 6
out0 out1 out2 out3
> t
RAS
CL = 4
=
Burst Read Operation Followed by Precharge (RL = 6 (AL=2, CL=4))
Preliminary Data Sheet E0203E41 (Ver. 4.1)
35
EDE5104GASA, EDE5108GASA
Burst Write followed by Precharge
Minimum Write to Precharge Command spacing to the same bank = WL + 2 clocks + tWR
For write cycles, a delay must be satisfied from the completion of the last burst write cycle until the precharge
command can be issued. This delay is known as a write recovery time (tWR) referenced from the completion of the
burst write to the precharge command. No precharge command should be issued prior to the tWR delay, as DDR-II
SDRAM does not support any burst interrupt operation.
T0
T1
T2
T3
T4
T5
T6
T7
T8
/CK
CK
Posted
WRIT
NOP
NOP
NOP
NOP
NOP
NOP
NOP
PRE
Command
> tWR
=
DQS, /DQS
WL = 3
in0
in1
in2
in3
DQ
Completion of
the Burst Write
Burst Write followed by Precharge (WL = (RL-1) =3)
T0
T1
T2
T3
T4
T5
T6
T7
T9
/CK
CK
Posted
WRIT
NOP
NOP
NOP
NOP
NOP
NOP
NOP
PRE
Command
> tWR
=
DQS, /DQS
DQ
WL = 4
in0
in1
in2
in3
Completion of
the Burst Write
Burst Write followed by Precharge (WL = (RL-1) = 4)
Preliminary Data Sheet E0203E41 (Ver. 4.1)
36
EDE5104GASA, EDE5108GASA
Auto-Precharge Operation
Before a new row in an active bank can be opened, the active bank must be precharged using either the precharge
command or the auto-precharge function. When a read or a write command is given to the DDR-II SDRAM, the
/CAS timing accepts one extra address, column address A10, to allow the active bank to automatically begin
precharge at the earliest possible moment during the burst read or write cycle. If A10 is low when the read or write
Command is issued, then normal read or write burst operation is executed and the bank remains active at the
completion of the burst sequence. If A10 is high when the Read or Write Command is issued, then the auto-
precharge function is engaged. During auto-precharge, a read Command will execute as normal with the exception
that the active bank will begin to precharge on the rising edge which is /CAS latency (CL) clock cycles before the end
of the read burst.
Auto-precharge can also be implemented during Write commands. The precharge operation engaged by the Auto
precharge command will not begin until the last data of the burst write sequence is properly stored in the memory
array.
This feature allows the precharge operation to be partially or completely hidden during burst read cycles (dependent
upon /CAS latency) thus improving system performance for random data access. The /RAS lockout circuit internally
delays the Precharge operation until the array restore operation has been completed so that the auto precharge
command may be issued with any read or write command.
Burst Read with Auto Precharge [READA]
If A10 is high when a Read Command is issued, the Read with Auto-Precharge function is engaged. The DDR-II
SDRAM starts an auto Precharge operation on the rising edge which is (AL + 2) cycles later from the read with AP
command when the condition that. When tRAS (min) is satisfied. If tRAS (min.) is not satisfied at the edge, the start
point so auto-precharge operation will be delayed until tRAS (min.) is satisfied. A new bank active (command) may
be issued to the same bank if the following two conditions are satisfied simultaneously.
(1) The /RAS precharge time (tRP) has been satisfied from the clock at which the auto precharge begins.
(2) The /RAS cycle time (tRC) from the previous bank activation has been satisfied.
T0
T1
T2
T3
T4
T5
T6
T7
T8
/CK
CK
A10 = 1
Posted
READ
NOP
NOP
NOP
NOP
NOP
NOP
NOP
Command
ACT
> tRAS(min.)
=
DQS, /DQS
> tRP
=
AL = 2
CL = 3
RL = 5
out0 out1 out2 out3
CL = 3
DQ
> tRC
=
Auto precharge begins
Burst Read with Auto Precharge Followed by an Activation to the Same Bank (tRC limit)
(RL = 5 (AL = 2, CL = 3, internal tRCD = 3))
Preliminary Data Sheet E0203E41 (Ver. 4.1)
37
EDE5104GASA, EDE5108GASA
T0
T1
T2
T3
T4
T5
T6
T7
T8
/CK
CK
A10 = 1
Posted
READ
ACT
NOP
NOP
NOP
NOP
NOP
NOP
NOP
Command
> tRAS(min.)
=
DQS, /DQS
> tRP
=
AL = 2
CL = 3
RL = 5
out0 out1 out2 out3
CL = 3
DQ
> tRC
=
Auto precharge begins
Burst Read with Auto Precharge Followed by an Activation to the Same Bank (tRP limit)
RL = 5 (AL = 2, CL = 3, internal tRCD = 3)
Preliminary Data Sheet E0203E41 (Ver. 4.1)
38
EDE5104GASA, EDE5108GASA
Burst Write with Auto-Precharge [WRITA]
If A10 is high when a write command is issued, the Write with auto-precharge function is engaged. The DDR-II
SDRAM automatically begins precharge operation after the completion of the burst write plus write recovery time
(tWR). The bank undergoing auto-precharge from the completion of the write burst may be reactivated if the
following two conditions are satisfied.
(1) The data-in to bank activate delay time (tWR + tRP) has been satisfied.
(2) The /RAS cycle time (tRC) from the previous bank activation has been satisfied.
T0
T1
T2
T3
T4
T5
T6
T7
T12
/CK
CK
A10 = 1
Posted
WRIT
NOP
NOP
NOP
NOP
NOP
NOP
NOP
Command
ACT
DQS, /DQS
> tWR
> tRP
WL = RL –1 = 2
=
=
in0
in1
in2
in3
DQ
> tRC
=
Auto Precharge Begins
Completion of the Burst Write
Burst Write with Auto-Precharge (tRC Limit) (WL = 2, tWR =2, tRP=3)
T0
T3
T4
T5
T6
T7
T8
T9
T12
/CK
CK
A10 = 1
Posted
WRIT
NOP
NOP
NOP
NOP
NOP
NOP
NOP
Command
ACT
DQS, /DQS
> tWR
=
WL = RL –1 = 4
> tRP
=
in0
in1
in2
in3
DQ
> tRC
=
Auto Precharge Begins
Completion of the Burst Write
Burst Write with Auto-Precharge (tWR + tRP) (WL = 4, tWR =2, tRP=3)
Preliminary Data Sheet E0203E41 (Ver. 4.1)
39
EDE5104GASA, EDE5108GASA
Automatic Refresh Command (/CAS Before /RAS Refresh) [REF]
When /CS, /RAS and /CAS are held low and /WE high at the rising edge of the clock, the chip enters the Automatic
Refresh mode (CBR). All banks of the DDR-II SDRAM must be precharged and idle for a minimum of the Precharge
time (tRP) before the Auto Refresh Command (CBR) can be applied. An address counter, internal to the device,
supplies the bank address during the refresh cycle. No control of the external address bus is required once this
cycle has started.
When the refresh cycle has completed, all banks of the DDR-II SDRAM will be in the precharged (idle) state. A
delay between the Auto Refresh Command (CBR) and the next Activate Command or subsequent Auto Refresh
Command must be greater than or equal to the Auto Refresh cycle time (tRFC).
T0
T1
T2
T3
T15
T7
T8
/CK
CK
High
> tRP
> tRFC
> tRFC
=
CKE
=
=
Any
Command
PRE
NOP
NOP
CBR
CBR
NOP
Command
Automatic Refresh Command
Self Refresh Command [SELF]
The DDR-II SDRAM device has a built-in timer to accommodate Self Refresh operation. The self refresh command
is defined by having /CS, /RAS, /CAS and CKE held low with /WE high at the rising edge of the clock. Once the
Command is registered, CKE must be held low to keep the device in self refresh mode. When the SDRAM has
entered self refresh mode all of the external control signals, except CKE, are disabled. The clock is internally
disabled during self refresh operation to save power. The user may halt the external clock while the device is in Self
Refresh mode, however, the clock must be restarted before the device can exit self refresh operation. Once the
clock is cycling, the exit command will be registered asynchronously by bringing CKE high. After CKE is brought
high, an internal timer is started to insure CKE is held high for approximately 10ns before registering the self refresh
exit command. The purpose of this circuit is to filter out noise glitches on the CKE input that may cause the DDR-II
SDRAM to erroneously exit self refresh operation. Once the self refresh command is registered, a delay equal or
longer than the tXSC must be satisfied before any command can be issued to the device. CKE must remain high
for the entire Self Refresh exit period (tXSC) and commands must be gated off with /CS held High. Alternatively,
NOP commands may be registered on each positive clock edge during the self refresh exit interval. (Self Refresh
Command)
T0
T1
T2
T3
Tm
Tn
Tn+1
/CK
CK
> tXSC
=
CKE
Any
Command
Command
SELF
NOP
: VIH or VIL
Self Refresh Command
Preliminary Data Sheet E0203E41 (Ver. 4.1)
40
EDE5104GASA, EDE5108GASA
Power-Down [PDEN]
Power-down is entered when CKE is registered (no accesses can be in progress). If power-down occurs when all
banks are idle, this mode is referred to as precharge power-down; if power-down occurs when there is a row active
in any bank, this mode is referred to as active power-down. Entering power-down deactivates the input and output
buffers, excluding CK, /CK and CKE. In power down mode, CKE Low and a stable clock signal must be maintained
at the inputs of the DDR-II SDRAM, and all other input signals are “VIH or VIL”. Power-down duration is limited by
the refresh requirements of the device.
The power-down state is synchronously exited when CKE is registered High (along with a NOP or DESL). A valid,
executable command may be applied after satisfied tXPRD or tXARD for read command exiting form precharge
power-down or active power-down respectively ,and after satisfied tXPNR for non-read command.
/CK
CK
tIS
tIS
CKE
VALID
NOP
NOP
VALID
Command
tXPRD, tXPNR
tXARD
No column
Exit
access in progress
power down
mode
Enter power down mode
(Burst read or write operation
must not be in progress)
: VIH or VIL
Power Down
Burst Interruption
Interruption of a burst read or write cycle is prohibited.
No Operation Command [NOP]
The no operation command should be used in cases when the DDR-II SDRAM is in an idle or a wait state. The
purpose of the no operation command is to prevent the DDR-II SDRAM from registering any unwanted commands
between operations. A no operation command is registered when /CS is low with /RAS, /CAS, and /WE held high at
the rising edge of the clock. A no operation command will not terminate a previous operation that is still executing,
such as a burst read or write cycle.
Deselect Command [DESL]
The deselect command performs the same function as a no operation command. Deselect Command occurs when
/CS is brought high at the rising edge of the clock, the /RAS, /CAS, and /WE signals become don’t cares.
Preliminary Data Sheet E0203E41 (Ver. 4.1)
41
EDE5104GASA, EDE5108GASA
Package Drawing
60-ball FBGA
Solder ball: Lead free (Sn-Ag-Cu)
0.2
S A
Unit: mm
11.3±0.1
0.2
S B
INDEX AREA
⁄⁄ 0.2
S
S
0.1
S
B
1
2 3
8 9
7
A
0.8
1.6
0.8
A
2.45
2.2
INDEX MARK
60-φ0.45±0.05
φ0.08
M
S
B
ECA-TS2-0075-01
Preliminary Data Sheet E0203E41 (Ver. 4.1)
42
EDE5104GASA, EDE5108GASA
Recommended Soldering Conditions
Please consult with our sales offices for soldering conditions of the EDE51XXGASA.
Type of Surface Mount Device
EDE51XXGASA: 60-ball FBGA < Lead free (Sn-Ag-Cu) >
Preliminary Data Sheet E0203E41 (Ver. 4.1)
43
EDE5104GASA, EDE5108GASA
NOTES FOR CMOS DEVICES
PRECAUTION AGAINST ESD FOR MOS DEVICES
1
Exposing the MOS devices to a strong electric field can cause destruction of the gate
oxide and ultimately degrade the MOS devices operation. Steps must be taken to stop
generation of static electricity as much as possible, and quickly dissipate it, when once
it has occurred. Environmental control must be adequate. When it is dry, humidifier
should be used. It is recommended to avoid using insulators that easily build static
electricity. MOS devices must be stored and transported in an anti-static container,
static shielding bag or conductive material. All test and measurement tools including
work bench and floor should be grounded. The operator should be grounded using
wrist strap. MOS devices must not be touched with bare hands. Similar precautions
need to be taken for PW boards with semiconductor MOS devices on it.
2
HANDLING OF UNUSED INPUT PINS FOR CMOS DEVICES
No connection for CMOS devices input pins can be a cause of malfunction. If no
connection is provided to the input pins, it is possible that an internal input level may be
generated due to noise, etc., hence causing malfunction. CMOS devices behave
differently than Bipolar or NMOS devices. Input levels of CMOS devices must be fixed
high or low by using a pull-up or pull-down circuitry. Each unused pin should be connected
to VDD or GND with a resistor, if it is considered to have a possibility of being an output
pin. The unused pins must be handled in accordance with the related specifications.
3
STATUS BEFORE INITIALIZATION OF MOS DEVICES
Power-on does not necessarily define initial status of MOS devices. Production process
of MOS does not define the initial operation status of the device. Immediately after the
power source is turned ON, the MOS devices with reset function have not yet been
initialized. Hence, power-on does not guarantee output pin levels, I/O settings or
contents of registers. MOS devices are not initialized until the reset signal is received.
Reset operation must be executed immediately after power-on for MOS devices having
reset function.
CME0107
Preliminary Data Sheet E0203E41 (Ver. 4.1)
44
EDE5104GASA, EDE5108GASA
The information in this document is subject to change without notice. Before using this document, confirm that this is the latest version.
No part of this document may be copied or reproduced in any form or by any means without the prior
written consent of Elpida Memory, Inc.
Elpida Memory, Inc. does not assume any liability for infringement of any intellectual property rights
(including but not limited to patents, copyrights, and circuit layout licenses) of Elpida Memory, Inc. or
third parties by or arising from the use of the products or information listed in this document. No license,
express, implied or otherwise, is granted under any patents, copyrights or other intellectual property
rights of Elpida Memory, Inc. or others.
Descriptions of circuits, software and other related information in this document are provided for
illustrative purposes in semiconductor product operation and application examples. The incorporation of
these circuits, software and information in the design of the customer's equipment shall be done under
the full responsibility of the customer. Elpida Memory, Inc. assumes no responsibility for any losses
incurred by customers or third parties arising from the use of these circuits, software and information.
[Product applications]
Elpida Memory, Inc. makes every attempt to ensure that its products are of high quality and reliability.
However, users are instructed to contact Elpida Memory's sales office before using the product in
aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment,
medical equipment for life support, or other such application in which especially high quality and
reliability is demanded or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury.
[Product usage]
Design your application so that the product is used within the ranges and conditions guaranteed by
Elpida Memory, Inc., including the maximum ratings, operating supply voltage range, heat radiation
characteristics, installation conditions and other related characteristics. Elpida Memory, Inc. bears no
responsibility for failure or damage when the product is used beyond the guaranteed ranges and
conditions. Even within the guaranteed ranges and conditions, consider normally foreseeable failure
rates or failure modes in semiconductor devices and employ systemic measures such as fail-safes, so
that the equipment incorporating Elpida Memory, Inc. products does not cause bodily injury, fire or other
consequential damage due to the operation of the Elpida Memory, Inc. product.
[Usage environment]
This product is not designed to be resistant to electromagnetic waves or radiation. This product must be
used in a non-condensing environment.
If you export the products or technology described in this document that are controlled by the Foreign
Exchange and Foreign Trade Law of Japan, you must follow the necessary procedures in accordance
with the relevant laws and regulations of Japan. Also, if you export products/technology controlled by
U.S. export control regulations, or another country's export control laws or regulations, you must follow
the necessary procedures in accordance with such laws or regulations.
If these products/technology are sold, leased, or transferred to a third party, or a third party is granted
license to use these products, that third party must be made aware that they are responsible for
compliance with the relevant laws and regulations.
M01E0107
Preliminary Data Sheet E0203E41 (Ver. 4.1)
45
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