select brandShort,logo,brand from pdf_brand where id=2 limit 1 2N2312_技术文档

2N2312 [ETC]

TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 500MA I(C) | TO-46 ; 晶体管| BJT | NPN | 60V V（ BR ） CEO | 500MA I（C ） | TO- 46\n

2N2312


型号：	2N2312
厂家：	ETC
描述：	TRANSISTOR \| BJT \| NPN \| 60V V(BR)CEO \| 500MA I(C) \| TO-46 晶体管\| BJT \| NPN \| 60V V（ BR ） CEO \| 500MA I（C ） \| TO- 46\n 晶体晶体管
文件：	总3页 (文件大小：367K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

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2N2313

TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 500MA I(C) | TO-46

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ETC

2N2314

TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 500MA I(C) | TO-46

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ETC

2N2315

TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 500MA I(C) | TO-46

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ETC

2N2316

TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 500MA I(C) | TO-46

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ETC

2N2317

TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 500MA I(C) | TO-46

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ETC

2N2322

1.6A RMS UP TO 400 VOLTS

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NJSEMI

2N2322

SILICON CONTROLLED RECTIFIER 1.6 AMPS, 25 THRU 400 VOLTS

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CENTRAL

2N2322

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2N2322

Silicon Controlled Rectifier, 1600mA I(T), 25V V(DRM)

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ASI

2N2322-PBF

Silicon Controlled Rectifier

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NJSEMI

2N2322A-PBF

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2N2322HR

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2N2322LEADFREE

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CENTRAL

2N2323

SCRs 1.6 Amp, Planear

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MICROSEMI

2N2323

Bipolar NPNP Device in a Hermetically sealed TO5

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SEME-LAB

2N2323

SILICON CONTROLLED RECTIFIER 1.6 AMPS, 25 THRU 400 VOLTS

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CENTRAL

2N2323

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2N2323

Silicon Controlled Rectifier, 1.6A I(T)RMS, 1600mA I(T), 50V V(DRM), 1 Element, TO-39, TO-39, 3 PIN

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ASI

2N2323

Silicon Controlled Rectifier; Max Peak Repetitive Reverse Voltage: 50; Max TMS Bridge Input Voltage: 1; Max DC Reverse Voltage: 0.1; Capacitance: 0.15; Package: TO-39

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DIGITRON

2N2323A

SILICON CONTROLLED RECTIFIER

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MICROSEMI

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