2SD1772AQ [ETC]
TRANSISTOR | BJT | NPN | 180V V(BR)CEO | 1A I(C) | SOT-186 ; 晶体管| BJT | NPN | 180V V（ BR ） CEO | 1A I（C ） | SOT- 186\n
| 型号： | 2SD1772AQ |
| 厂家： | 
ETC |
| 描述： | TRANSISTOR | BJT | NPN | 180V V(BR)CEO | 1A I(C) | SOT-186
|
| 文件： | 总3页 (文件大小：47K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Power Transistors
2SD1772, 2SD1772A
Silicon NPN triple diffusion planar type
For power amplification
Unit: mm
For TV vertical deflection output
Complementary to 2SB1192 and 2SB1192A
10.0±0.2
5.5±0.2
4.2±0.2
2.7±0.2
Features
Large collector power dissipation PC
■
φ3.1±0.1
●
●
Full-pack package which can be installed to the heat sink with
one screw
1.3±0.2
1.4±0.1
Absolute Maximum Ratings (T =25˚C)
■
C
+0.2
–0.1
0.5
0.8±0.1
Parameter
Symbol
Ratings
Unit
Collector to
2SD1772
2SD1772A
2SD1772
200
VCBO
V
2.54±0.25
base voltage
Collector to
200
5.08±0.5
150
1
2
3
VCEO
V
emitter voltage 2SD1772A
Emitter to base voltage
Peak collector current
Collector current
180
1:Base
2:Collector
3:Emitter
VEBO
ICP
6
V
A
A
2
TO–220 Full Pack Package(a)
IC
1
Collector power TC=25°C
25
PC
W
dissipation
Ta=25°C
2
Junction temperature
Storage temperature
Tj
150
˚C
˚C
Tstg
–55 to +150
Electrical Characteristics (T =25˚C)
■
C
Parameter
Symbol
ICBO
Conditions
min
typ
max
50
Unit
µA
Collector cutoff current
Emitter cutoff current
VCB = 200V, IE = 0
IEBO
VEB = 4V, IC = 0
50
µA
2SD1772
2SD1772A
Collector to emitter
voltage
150
180
6
VCEO
VEBO
IC = 5mA, IB = 0
V
V
Emitter to base voltage
IE = 0.5mA, IC = 0
*
hFE1
VCE = 10V, IC = 100mA
60
50
240
Forward current transfer ratio
Base to emitter voltage
hFE2
VBE
VCE = 10V, IC = 300mA
VCE = 10V, IC = 300mA
1
1
V
V
Collector to emitter saturation voltage VCE(sat)
IC = 500mA, IB = 50mA
Transition frequency
fT
VCE = 10V, IC = 100mA, f = 1MHz
VCB = 10V, IE = 0, f = 1MHz
20
27
MHz
pF
Collector output capacitance
Cob
*hFE1 Rank classification
Rank
hFE1
Q
P
60 to 140
100 to 240
1
Power Transistors
2SD1772, 2SD1772A
PC — Ta
IC — VCE
IC — VBE
40
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
4
TC=25˚C
IB=20mA
VCE=10V
(1) TC=Ta
35
(2) With a 100 × 100 × 2mm
Al heat sink
(3) Without heat sink
(PC=2W)
30
25
20
15
10
5
3
(1)
25˚C
10mA
TC=100˚C
–25˚C
8mA
6mA
2
1
0
4mA
(2)
(3)
2mA
1mA
0
0
20 40 60 80 100 120 140 160
0
4
8
12
16
20
24
0
0.4
0.8
1.2
1.6
(
)
(
V
)
( )
Base to emitter voltage VBE V
Ambient temperature Ta ˚C
Collector to emitter voltage VCE
VCE(sat) — IC
hFE — IC
fT — IC
1000
VCE=10V
IC/IB=10
VCE=10V
f=1MHz
10
1000
300
100
TC=25˚C
TC=100˚C
25˚C
3
1
300
100
TC=100˚C
30
10
–25˚C
25˚C
0.3
0.1
30
10
–25˚C
3
1
0.03
0.01
3
1
0.3
0.1
0.01
0.03
0.1
0.3
1
3
0.01
0.03
0.1
0.3
1
3
0.01 0.03
0.1
0.3
1
3
10
( )
A
(
A
)
( )
Collector current IC A
Collector current IC
Collector current IC
Area of safe operation (ASO)
Rth(t) — t
10
102
10
(1) Without heat sink
(2) With a 100 × 100 × 2mm Al heat sink
Non repetitive pulse
TC=25˚C
(1)
(2)
3
1
ICP
IC
t=0.5ms
1ms
10ms
0.3
0.1
DC
1
0.03
0.01
10–1
0.003
0.001
10–2
10–4
1
3
10
30
100 300 1000
10–3
10–2
10–1
1
10
102
103
104
( )
V
( )
s
Collector to emitter voltage VCE
Time
t
2
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2001 MAR
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