3SK236 [ETC]
;
| 型号： | 3SK236 |
| 厂家： | 
ETC |
| 描述： |
|
| 文件： | 总4页 (文件大小：22K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
3SK236
Silicon N–Channel Dual Gate MOSFET
Application
CMPAK-4
VHF RF amplifier
Features
2
• Excellent cross modulation characteristics
• Capable of low voltage operation
3
1
4
1. Source
2. Gate1
3. Gate2
4. Drain
Table 1 Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
———————————————————————————————————————————
Drain to source voltage
V
12
V
DS
———————————————————————————————————————————
Gate1 to source voltage
V
±10
V
G1S
———————————————————————————————————————————
Gate2 to source voltage
V
±10
V
G2S
———————————————————————————————————————————
Drain current
I
35
mA
D
———————————————————————————————————————————
Channel power dissipation
P
100
mW
ch
———————————————————————————————————————————
Channel temperature
Tch
125
°C
———————————————————————————————————————————
Storage temperature
Tstg
–55 to +125
°C
———————————————————————————————————————————
Marking is “XX–”.
3SK236
Table 2 Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
———————————————————————————————————————————
Drain to source
V
12
—
—
V
I
= 200 µA, V
= –5 V,
(BR)DSX
D
G1S
breakdown voltage
V
= –5 V
G2S
———————————————————————————————————————————
Gate1 to source
V
±10
—
—
V
I
= ±10 µA,
(BR)G1SS
G1
breakdown voltage
V
= V
= 0
G2S
DS
———————————————————————————————————————————
Gate2 to source
V
±10
—
—
V
I
= ±10 µA,
(BR)G2SS
G2
breakdown voltage
V
= V
= 0
G1S
DS
———————————————————————————————————————————
Gate1 leakage
current
I
—
—
±100
nA
V
V
= ±8 V,
G1SS
G1S
G2S
= V
= 0
DS
———————————————————————————————————————————
Gate2 leakage
current
I
—
—
±100
nA
V
V
= ±8 V,
G2SS
G2S
G1S
= V
= 0
DS
———————————————————————————————————————————
Drain current
I
0
—
1
mA
V
= 4 V, V
= 0,
DSS
DS
G1S
V
= 3 V
G2S
———————————————————————————————————————————
Gate1 to source
V
0
—
+1.0
V
V
= 6 V, V
= 3V,
G1S(off)
DS
G2S
cutoff voltage
I
= 100 µA
D
———————————————————————————————————————————
Gate2 to source
V
0
—
+1.0
V
V
= 6 V, V
= 3V,
G2S(off)
DS
G1S
cutoff voltage
I
= 100 µA
D
———————————————————————————————————————————
Forward transfer
|y |
13
17
—
mS
V
= 6V, V
= 3 V,
fs
DS
G2S
admittance
I
= 10 mA, f = 1 kHz
D
———————————————————————————————————————————
Input capacitance
Ciss
2.5
3.5
4.5
pF
V
= 6 V,
DS
——————————————————————————————
V
= 3 V,I = 10 mA,
D
G2S
Output capacitance
Coss
1.0
1.4
1.8
pF
f = 1 MHz
——————————————————————————————
Reverse transfer
Crss
—
0.018
0.03
pF
capacitance
———————————————————————————————————————————
Power gain
PG
22
27.6
—
dB
V
= 4 V, V
= 3 V,
DS
G2S
——————————————————————————————
I = 10 mA, f = 200 MHz
D
Noise figure
NF
—
1.77
2.7
dB
———————————————————————————————————————————
3SK236
Maximum channel power dissipation curve
200
Typicla output characteristics
20
16
12
8
V
= 3 V
G2S
150
100
50
V
G1S
= 1.6 V
1.4 V
1.2 V
1.0 V
4
0.8 V
0.6 V
0
50
100
150
200
0
2
4
6
8
10
Drain to Source Voltage V
(V)
Ambient Temperature Ta (°C)
DS
Drain current vs. gate1 to source voltage
20
Drain current vs. gate2 to source voltage
20
V
DS
= 4 V
V
DS
= 4 V
2.5 V
16
12
8
16
12
8
3 V
V
= 1.6 V
2 V
G1S
1.4 V
1.2 V
1 V
1.5 V
4
4
V
G2S
= 1V
4
0.8 V
0.6 V
3
0
1
2
3
5
0
1
2
4
5
Gate2 to Source Voltage V
(V)
Gate1 to Source Voltage V
(V)
G2S
G1S
3SK236
Forward transfer admittance
vs. gate1 to source voltage
Power gain vs. drain current
40
32
24
16
8
25
20
15
10
5
V
= 4 V
= 3 V
DS
V
= 4 V
DS
V
G2S
f = 1 kHz
f = 200 MHz
V
= 3 V
G2S
2.5V
2 V
1.5 V
1 V
0
4
8
12
16
(mA)
20
0
0.4
0.8
1.2
1.6
G1S
2
Gate1 to Source Voltage V
(V)
Drain Current
I
D
Noise figure vs. drain current
5
4
3
2
1
V
V
= 4 V
DS
= 3 V
G2S
f = 200 MHz
0
4
8
12
I
D
16
(mA)
20
Drain Current
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