80EPF02S [ETC]
;
| 型号： | 80EPF02S |
| 厂家： | 
ETC |
| 描述： | 二极管 局域网 软恢复二极管 快速软恢复二极管 |
| 文件： | 总6页 (文件大小：143K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Bulletin I2112
80EPF..S SERIES
SURFACE MOUNTABLE
FAST RECOVERY
RECTIFIER DIODE
VF < 1V @ 40A
trr = 70ns
VRRM 200 to 600V
Description/Features
The 80EPF..S soft recovery rectifier series has
been optimized for combined short reverse
recovery time and low forward voltage drop.
The glass passivation ensures stable reliable
operation in the most severe temperature and
power cycling conditions.
Typical applications are both:
output rectification and freewheeling in
inverters, choppers and converters
and input rectifications where severe
restrictions on conducted EMI should be met.
Major Ratings and Characteristics
Characteristics
80EPF..S Units
I
Sinusoidalwaveform
80
200to 600
830
A
V
F(AV)
V
I
RRM
A
FSM
V
@40A, T =25°C
1
V
F
J
trr
@1A, -100A/µs
70
ns
°C
SMD-247
T
-40to125
J
1
80EPF..S Series
Voltage Ratings
VRRM , maximum
peak reverse voltage
V
VRSM , maximum non repetitive
IRRM
125°C
mA
peak reverse voltage
V
Part Number
80EPF02S
80EPF04S
80EPF06S
200
400
600
300
500
700
5
Absolute Maximum Ratings
Parameters
80EPF..S Units
Conditions
IF(AV) Max.AverageForwardCurrent
80
A
@ TC =70°C,180°conductionhalfsinewave
IFSM Max.PeakOneCycleNon-Repetitive
SurgeCurrent
700
830
10msSinepulse,ratedVRRMapplied
10msSine pulse,novoltagereapplied
10msSinepulse,ratedVRRMapplied
10msSinepulse,novoltagereapplied
t=0.1to10ms,novoltagereapplied
A
I2t
Max. I2tforfusing
2450
3465
34650
A2s
I2√t Max. I2√tforfusing
A2√s
Electrical Specifications
Parameters
80EPF..S Units
Conditions
VFM Max. Forward Voltage Drop
1.2
3.5
0.85
0.1
5
V
mΩ
V
@ 80A, TJ = 25°C
rt
Forward slope resistance
TJ = 125°C
VF(TO) Threshold voltage
IRM Max. Reverse Leakage Current
TJ = 25 °C
mA
VR = rated VRRM
TJ = 125 °C
Recovery Characteristics
Parameters
80EPF..S Units
Conditions
IF @ 80Apk
@ 25A/ µs
trr
Reverse Recovery Time
Reverse Recovery Current
Reverse Recovery Charge
Snap Factor
180
3.4
0.5
0.5
ns
A
Irr
Qrr
S
µC
@ 25°C
2
80EPF..S Series
Thermal-MechanicalSpecifications
Parameters
80EPF..S Units
Conditions
TJ
Max.JunctionTemperatureRange
-40to125
-40to125
0.35
°C
°C
Tstg Max.StorageTemperatureRange
RthJC Max.ThermalResistanceJunction
toCase
°C/W
DCoperation
RthJA Max.ThermalResistanceJunction
toAmbient
40
°C/W
°C/W
g(oz.)
RthCS TypicalThermalResistance,Caseto
Heatsink
0.2
Mountingsurface,smoothandgreased
wt
T
ApproximateWeight
MountingTorque
6(0.21)
6(5)
Min.
Kg-cm
(Ibf-in)
Max.
12(10)
CaseStyle
SMD-247
130
130
80EPF.. Series
R
80EPF.. Series
R
(DC) = 0.35 K/W
(DC) = 0.35 K/W
120
110
100
90
120
110
100
90
thJC
thJC
Conduction Period
Conduction Angle
80
80
30°
30°
60°
70
70
60°
90°
60
90°
60
60
120°
120°
180°
DC
180°
50
50
0
10 20 30 40 50 60 70 80 90
0
20
40
80 100 120 140
Average Forward Current (A)
Average Forward Current (A)
Fig.1-CurrentRatingCharacteristics
Fig.2-CurrentRatingCharacteristics
140
120
100
80
180
160
140
120
100
80
DC
180°
120°
90°
180°
120°
90°
60°
30°
60°
30°
RMS Limit
RMS Limit
60
60
40
Conduction Period
Conduction Angle
40
80EPF..
T = 125°C
80EPF..
T = 125°C
20
20
J
J
0
0
0
20
40
60
80
100
0
20
40
60
80 100 120 140
Average On-state Current (A)
Fig.3-ForwardPowerLossCharacteristics
Average On-state Current (A)
Fig.4-ForwardPowerLossCharacteristics
3
80EPF..S Series
900
800
700
600
500
400
300
200
100
850
At Any Rated Load Condition And With
Rated V
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration. Control
Of Conduction May Not Be Maintained.
Applied Following Surge.
Initial T = 125°C
RRM
750
650
550
450
350
250
150
J
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
Initial T = 125°C
J
No Voltage Reapplied
Rated V
Reapplied
RRM
80EPF..Series
80EPF..Series
1
10
100
0.01
0.1
1
10
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Pulse Train Duration (s)
Fig.6-MaximumNon-RepetitiveSurgeCurrent
Fig.5-MaximumNon-RepetitiveSurgeCurrent
1000
100
10
T = 25°C
J
T = 125°C
J
80EPF.. Series
1
0
0.5
1
1.5
2
2.5
3
3.5
4
Instantaneous Forward Voltage (V)
Fig.7-ForwardVoltageDropCharacteristics
0.25
0.2
0.15
0.1
0.05
0
0.4
80EPF..
T = 25 °C
I
= 125 A
80 A
J
TM
I
= 80 A
40 A
TM
0.3
0.2
0.1
0
40 A
20 A
10 A
20 A
10 A
1 A
1 A
80EPF..
T = 125 °C
J
0
40
80
120
160
200
0
20 40 60 80 100 120 140 160 180 200
Rate Of Fall Of Forward Current - di/dt (A/µs)
Rate Of Fall Of Forward Current - di/dt (A/µs)
Fig. 9-RecoveryTimeCharacteristics, TJ =125°C
Fig. 8-RecoveryTimeCharacteristics, TJ =25°C
4
80EPF..S Series
4
3
2
1
0
9
8
7
6
5
4
3
2
1
0
I
= 125 A
80 A
80EPF..
T = 125 °C
80EPF..
T = 25 °C
TM
I
= 80 A
TM
J
J
40 A
40 A
20 A
20 A
10 A
10 A
1 A
1 A
0
40
80
120
160
200
0
40
80
120
160
200
Rate Of Fall Of Forward Current - di/dt (A/µs)
Rate Of Fall Of Forward Current - di/dt (A/µs)
Fig.10-RecoveryChargeCharacteristics,TJ =25°C
Fig.11-RecoveryChargeCharacteristics,TJ =125°C
25
35
I
= 125 A
80 A
80EPF..
T = 25 °C
80EPF..
T = 125 °C
TM
I
= 80 A
40 A
30
25
20
15
10
5
TM
J
J
20
15
10
5
40 A
20 A
10 A
20 A
10 A
1 A
1 A
0
0
0
40
80
120
160
200
0
40
80
120
160
200
Rate Of Fall Of Forward Current - di/dt (A/µs)
Rate Of Fall Of Forward Current - di/dt (A/µs)
Fig.12-RecoveryCurrentCharacteristics,TJ =25°C
Fig.13-RecoveryCurrentCharacteristics,TJ =125°C
1
Steady State Value
(DC Operation)
D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08
0.1
Single Pulse
80EPF.. Series
0.01
0.0001
0.001
0.01
0.1
1
Square Wave Pulse Duration (s)
Fig.14-ThermalImpedanceZthJC Characteristics
5
80EPF..S Series
OutlineTable
15.7 (0.62)
15.5 (0.61)
10.1 (0.40)
3.65 (0.144)
3.55 (0.139)
DIA.
2.1 (0.08)
1.9 (0.07)
9.1 (0.36)
3° TYP.
5.6 (0.22)
5.4 (0.21)
6.4 (0.25)
6.2 (0.24)
2.1 (0.08)
1.9 (0.07)
3.2 (0.13)
3.0 (0.12)
1
3
3° TYP.
3.0 (0.12)
2.6 (0.10)
5.1 (0.20)
4.8 (0.19)
0.65 (0.03)
0.55 (0.02)
0 + 0.2 (0.008)
0 - 0.1 (0.004)
10° TYP.
20.1 (0.79)
19.9 (0.78)
5.1 (0.20)
4.9 (0.19)
3° TYP.
1.3 (0.051)
1.2 (0.047)
5.5 (0.22) TYP.
Dimensionsinmillimetersandinches
Ordering InformationTable
Device Code
BACK
80
E
P
F
06
S
CATHODE
2
5
6
1
2
3
4
1
2
-
-
Current Rating
3
1
Circuit Configuration
E = Single Diode
Package
ANODE
ANODE
3
4
-
-
P = TO-247AC (Modified)
Type of Silicon
02 = 200V
04 = 400V
06 = 600V
F = Fast Recovery
5
6
-
-
Voltage code: Code x 100 = V
RRM
S = TO-247AC (SMD-247) Version 6
6
相关型号：
80EPF06PBF
Rectifier Diode, 1 Phase, 1 Element, 80A, 600V V(RRM), Silicon, TO-247AC, LEAD FREE, TO-247AC, 2 PIN
INFINEON
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