80EPF04 [INFINEON]
FAST SOFT RECOVERY RECTIFIER DIODE; 快速软恢复整流二极管
| 型号： | 80EPF04 |
| 厂家： | 
Infineon |
| 描述： | FAST SOFT RECOVERY RECTIFIER DIODE |
| 文件： | 总7页 (文件大小：147K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Bulletin I2110 rev. B 04/99
QUIETIR Series
80EPF..
FAST SOFT RECOVERY
RECTIFIER DIODE
VF < 1.1V @ 40A
trr = 70ns
VRRM 200 to 600V
Description/Features
The 80EPF.. fast soft recovery QUIETIR rectifier
series has been optimized for combined short reverse
recovery time and low forward voltage drop.
The glass passivation ensures stable reliable
operation in the most severe temperature and power
cycling conditions.
Typical applications are both:
output rectification and freewheeling in
inverters, choppers and converters
and input rectifications where severe
restrictions on conducted EMI should be met.
Package Outline
Major Ratings and Characteristics
Characteristics
80EPF.. Units
I
Sinusoidal waveform
80
200to600
1000
A
V
F(AV)
V
range
RRM
FSM
I
A
V
@40A,T =25°C
J
1.1
V
F
trr
@1A,-100A/µs
range
70
ns
°C
TO-247AC
T
-40to150
J
1
80EPF.. QUIETIR Series
Bulletin I2110 rev. A 06/97
Voltage Ratings
VRRM , maximum
peak reverse voltage
V
VRSM , maximum non repetitive
IRRM
150°C
mA
peak reverse voltage
V
Part Number
80EPF02
80EPF04
80EPF06
200
400
600
300
500
700
17
Absolute Maximum Ratings
Parameters
80EPF..
80
Units
A
Conditions
IF(AV) Max.AverageForwardCurrent
@TC=95°C,180°conduction half sine wave
IFSM Max.PeakOneCycleNon-Repetitive
Surge Current
850
1000
3610
5100
51000
10ms Sine pulse,rated VRRM applied
10ms Sine pulse,no voltage reapplied
10ms Sine pulse,rated VRRM applied
10ms Sine pulse,no voltage reapplied
t=0.1to10ms,no voltage reapplied
A
I2t
Max.I2t for fusing
A2s
I2√t Max.I2√t for fusing
A2√s
Electrical Specifications
Parameters
80EPF..
1.25
Units
V
Conditions
VFM Max. Forward Voltage Drop
@ 80A, TJ = 25°C
rt
Forwardsloperesistance
3.5
0.85
0.1
mΩ
TJ = 125°C
VF(TO) Thresholdvoltage
V
IRM Max. ReverseLeakageCurrent
TJ = 25 °C
VR = rated VRRM
TJ = 150 °C
mA
17
Recovery Characteristics
Parameters
80EPF..
190
Units
ns
Conditions
IFM
trr
Irr
Reverse Recovery Time
Reverse Recovery Current
Reverse Recovery Charge
Snap Factor
IF @ 40Apk
trr
3.4
A
@ 25A/ µs
t
di
dt
Qrr
Qrr
S
0.5
µC
@ 25°C
IRM (REC)
0.5
2
80EPF.. QUIETIR Series
Bulletin I2110 rev. A 06/97
Thermal-Mechanical Specifications
Parameters
80EPF.. Units
Conditions
TJ
Max.JunctionTemperatureRange
-40to150
-40to150
0.35
°C
°C
Tstg Max.StorageTemperatureRange
RthJC Max.ThermalResistanceJunction
toCase
°C/W
DCoperation
RthJA Max.ThermalResistanceJunction
toAmbient
40
°C/W
°C/W
g(oz.)
RthCS TypicalThermalResistance,Caseto
Heatsink
0.2
Mountingsurface,smoothandgreased
wt
T
ApproximateWeight
MountingTorque
6(0.21)
6(5)
Min.
Kg-cm
(Ibf-in)
Max.
12(10)
CaseStyle
TO-247AC
150
150
80EPF.. Se rie s
80EPF.. Se rie s
R
(DC) = 0.35 K/ W
R
(DC ) = 0.35 K/ W
th JC
thJC
140
130
120
110
100
90
140
130
120
110
100
90
C o nd uc tio n Ang le
Co nd uc tio n Pe rio d
90°
90°
60°
60°
120°
120°
DC
100 120 140
30°
40
180°
30°
180°
80
80
0
20
60
80
0
10 20 30 40 50 60 70 80 90
Ave ra g e Forwa rd C urre nt (A)
Ave ra g e Forwa rd C urre n t (A)
Fig.1-CurrentRatingCharacteristics
Fig.2-CurrentRatingCharacteristics
180
160
140
120
100
80
140
120
100
80
DC
180°
120°
90°
60°
30°
180°
120°
90°
60°
30°
RMS Lim it
RMS Lim it
60
Co n d uc tio n Ang le
60
C o nd u ctio n Pe rio d
40
40
80EPF.. Se rie s
80EPF.. Se rie s
20
T
= 150°C
J
20
T
= 150°C
J
0
0
0
20
40
60
80 100 120 140
0
10 20 30 40 50 60 70 80 90
Ave ra g e Fo rwa rd Curre nt (A)
Ave ra g e Fo rw a rd C urre nt (A)
Fig.4-ForwardPowerLossCharacteristics
Fig.3-ForwardPowerLossCharacteristics
3
80EPF.. QUIETIR Series
Bulletin I2110 rev. A 06/97
1000
1000
900
800
700
600
500
400
300
200
At Any Ra te d Lo a d C o n d itio n And With
Ma ximum Non Rep e titive Surg e Curre nt
Ra te d
V
Ap p lie d Fo llo wing Su rg e.
Ve rsus Pulse Tra in Dura t io n.
900
800
700
600
500
400
300
200
RRM
Initia l T = 150°C
Initia l T = 150°C
J
J
No Volta g e Re a pp lie d
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
Ra te d V
Re a pp lie d
RRM
80EPF.. Se rie s
80EPF.. Se rie s
1
10
100
0.01
0.1
Pulse Tra in Dura tio n (s)
Fig.6-MaximumNon-RepetitiveSurgeCurrent
1
Numbe r O f Equa l Amp litud e Ha lf Cyc le Curre nt Pulse s (N)
Fig.5-MaximumNon-RepetitiveSurgeCurrent
1000
100
10
T = 25°C
J
T = 150°C
J
80EPF.. Se ries
1
0
0.5
1
1.5
2
2.5
3
3.5
4
Insta n ta n eo us Fo rwa rd Volta g e (V)
Fig.7-ForwardVoltageDropCharacteristics
0.22
0.2
0.6
I
= 125 A
FM
80EPF.. Se rie s
= 150°C
80 A
T
J
0.5
0.4
0.3
0.2
0.1
0
40 A
0.18
0.16
0.14
0.12
0.1
I
FM = 80 A
40 A
20 A
10 A
20 A
10 A
0.08
0.06
0.04
1 A
1 A
80EPF.. Se rie s
T
= 25°C
J
0
40
80
120
160
200
0
40
80
120
160
200
Ra te O f Fa ll O f Fo rwa rd C urre nt - d i/d t (A/ µs)
Fig. 8-RecoveryTimeCharacteristics, TJ =25°C
Ra te Of Fa ll O f Fo rwa rd C urre nt - d i/d t (A/ µs)
Fig.9-RecoveryTimeCharacteristics,TJ =150°C
4
80EPF.. QUIETIR Series
Bulletin I2110 rev. A 06/97
4
3.5
3
14
80EPF.. Se rie s
80EPF.. Se rie s
I
FM
= 125 A
I
= 80 A
FM
T
= 25°C
T
= 150°C
12
10
8
J
J
80 A
40 A
20 A
2.5
2
40 A
20 A
6
1.5
1
10 A
1 A
4
10 A
1 A
2
0.5
0
0
0
40
80
120
160
200
0
40
80
120
160
200
Ra te O f Fa ll Of Forwa rd C urre n t - d i/d t (A/ µs)
Ra te O f Fa ll Of Fo rwa rd C urre n t - d i/d t (A/ µs)
Fig.10-RecoveryChargeCharacteristics,TJ =25°C
Fig.11-RecoveryChargeCharacteristics,TJ =150°C
22
45
I
= 125 A
I
= 80 A
FM
80EPF.. Se rie s
80EPF.. Se rie s
FM
20
18
16
14
12
10
8
40
35
30
25
20
15
10
5
T
= 25°C
T = 150°C
J
J
80 A
40 A
40 A
20 A
20 A
10 A
10 A
1 A
6
4
1 A
2
0
0
0
40
80
120
160
200
0
40
80
120
160
200
Ra te Of Fa ll O f Fo rwa rd C urre nt - d i/ d t (A/ µs)
Ra te Of Fa ll Of Forwa rd C urre n t - d i/d t (A/ µs)
Fig.12-RecoveryCurrentCharacteristics,TJ =25°C
Fig.13-RecoveryCurrentCharacteristics,TJ =150°C
1
Ste a d y Sta te Va lue
(DC Op e ra tio n)
D = 0.50
D = 0.33
0.1
D = 0.25
D = 0.17
D = 0.08
Sing le Pulse
80EPF.. Se rie s
0.01
0.0001
0.001
0.01
0.1
1
10
Sq ua re Wa ve Pulse Dura tion (s)
Fig.14-ThermalImpedanceZthJCCharacteristics
5
80EPF.. QUIETIR Series
Bulletin I2110 rev. A 06/97
Outline Table
3. 65 (0.144)
3. 55 (0.139)
5. 30 (0.209)
4.70 (0.185)
DIA.
15.90 (0.626)
15.30 (0.602)
2.5 ( 0.098)
1.5 ( 0.059)
5. 70 (0.225)
5.30 (0.208)
20.30 (0.800)
19.70 (0.775)
5.50 ( 0.217)
4. 50 (0.177)
(2 PLCS.)
1
2
3
14.80 ( 0.583)
14.20 (0.559)
4. 30 (0.170)
3. 70 (0.145)
2. 20 (0.087)
MAX.
2. 40 (0.095)
MAX.
1.40 (0.056)
1.00 (0.039)
0.80 ( 0.032)
0. 40 (0.213)
10. 94 ( 0.430)
10.86 (0.427)
Dimensionsinmillimetersandinches
Ordering Information Table
Device Code
BaseCathode
80
E
P
F
06
2
5
1
2
3
4
1
2
-
-
CurrentRating
CircuitConfiguration:
Anode
1
3
Anode
E = Single Diode, 3 pins
Package:
3
4
-
-
-
P = TO-247AC
Type of Silicon:
F = Fast Recovery
02 = 200V
04 = 400V
06 = 600V
5
6
Voltage code: Code x 100 = V
RRM
6
80EPF.. QUIETIR Series
Bulletin I2110 rev. A 06/97
WORLDHEADQUARTERS: 233 Kansas St., El Segundo, California 90245 U.S.A. Tel: (310) 322 3331. Fax: (310) 322 3332.
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IR TAIWAN: 16 Fl. Suite D.207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan. Tel: 886 2 2377 9936.
http://www.irf.com
Fax-On-Demand: +44 1883 733420
Data and specifications subject to change without notice.
7
相关型号：
80EPF06PBF
Rectifier Diode, 1 Phase, 1 Element, 80A, 600V V(RRM), Silicon, TO-247AC, LEAD FREE, TO-247AC, 2 PIN
INFINEON
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