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APT1004R2AN [ETC]

TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 3.5A I(D) | TO-3 ; 晶体管| MOSFET | N沟道| 1KV V（ BR ） DSS | 3.5AI （D ） | TO- 3
APT1004R2AN
元器件型号： APT1004R2AN
生产厂家： ETC    ETC
描述和应用：

TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 3.5A I(D) | TO-3
晶体管| MOSFET | N沟道| 1KV V（ BR ） DSS | 3.5AI （D ） | TO- 3

晶体 晶体管 局域网
PDF文件： 总4页 (文件大小：216K)
下载文档：  下载PDF数据表文档文件
型号参数：APT1004R2AN参数
 查看货源

APT1004R2BN

 N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

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33 ADPOW

APT1004R2BN-BUTT

 Power Field-Effect Transistor, 4A I(D), 1000V, 4.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247

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0 ADPOW

APT1004R2BN-GULLWING

 Power Field-Effect Transistor, 4A I(D), 1000V, 4.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, 3 PIN

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0 ADPOW

APT1004R2CN

 TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 3.3A I(D) | TO-254ISO

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9 ETC

APT1004R2GN

 TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 3A I(D) | TO-257ISO

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17 ETC

APT1004R2KN

 N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

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24 ADPOW

APT1004RAN

 TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 3.9A I(D) | TO-3

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28 ETC

APT1004RBN

 N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

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62 ADPOW

APT1004RBN-BUTT

 4.4A, 1000V, 4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247

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0 MICROSEMI

APT1004RBNG

 Power Field-Effect Transistor, 4.4A I(D), 1000V, 4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247AD, 3 PIN

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0 MICROSEMI

APT1004RBN-GULLWING

 4.4A, 1000V, 4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247, TO-247, 3 PIN

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0 MICROSEMI

APT1004RBNR

 TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 4.4A I(D) | TO-247AD

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14 ETC

APT1004RCN

 N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

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50 ADPOW

APT1004RDN

 TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | CHIP

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12 ETC

APT1004RDN

 Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

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0 ADPOW
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