APT8016DN [ETC]
TRANSISTOR | MOSFET | N-CHANNEL | 800V V(BR)DSS | CHIP ; 晶体管| MOSFET | N沟道| 800V V（ BR ） DSS |芯片\n
| 型号： | APT8016DN |
| 厂家： | 
ETC |
| 描述： | TRANSISTOR | MOSFET | N-CHANNEL | 800V V(BR)DSS | CHIP
|
| 文件： | 总4页 (文件大小：387K) |
| 下载： | 下载PDF数据表文档文件 |
APT8018
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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13
ADPOW
APT8018
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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21
ADPOW
APT8018JN
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETSWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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36
ADPOW
APT8018JN
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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9
ADPOW
APT8018JN
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETSWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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21
ADPOW
APT8018JNFR
TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 800V V(BR)DSS | 40A I(D)Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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14
ETC
APT8018L2VFR
POWER MOS V FREDFETWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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15
ADPOW
APT8018L2VFR
Volts:800V RDS(ON)0.18Ohms ID(cont):43Amps|MOSFETsWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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11
ETC
APT8018L2VFR
POWER MOS V FREDFETWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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13
ADPOW
APT8018L2VFRG
Power Field-Effect Transistor, 43A I(D), 800V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264MAX, 3 PINWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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0
MICROSEMI
APT8018L2VR
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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18
MICROSEMI
APT8018L2VR
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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15
ADPOW
APT8018L2VR_06
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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15
MICROSEMI
APT801R2AN
TRANSISTOR | MOSFET | N-CHANNEL | 800V V(BR)DSS | 8A I(D) | TO-3Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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6
ETC
APT801R2BN
TRANSISTOR | MOSFET | N-CHANNEL | 800V V(BR)DSS | 9A I(D) | TO-247ADWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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30
ETC
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