BLC8G24LS-241AVZ [ETC]
RF FET LDMOS 65V 14.5DB SOT12521;型号: | BLC8G24LS-241AVZ |
厂家: | ETC |
描述: | RF FET LDMOS 65V 14.5DB SOT12521 |
文件: | 总12页 (文件大小:1130K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
BLC8G24LS-241AV
Power LDMOS transistor
Rev. 2 — 2 December 2016
Product data sheet
1. Product profile
1.1 General description
240 W LDMOS packaged asymmetric Doherty power transistor for base station
applications at frequencies from 2300 MHz to 2400 MHz.
Table 1.
Typical RF performance at Tcase = 25 C in an asymmetrical Doherty production test circuit.
DS = 28 V; IDq = 500 mA (main); VGS(amp)peak = 0.30 V, unless otherwise specified.
Typical performance
V
Test signal
f
VDS
(V)
28
PL(AV)
(W)
Gp
D
ACPR
(dBc)
29 [1]
(MHz)
(dB)
15
(%)
44
1-carrier W-CDMA
2300 to 2400
56
[1] Test signal: 3GPP test model 1; 64 DPCH; PAR = 7.2 dB at 0.01% probability on CCDF per carrier.
1.2 Features and benefits
Excellent ruggedness
High-efficiency
Low thermal resistance providing excellent thermal stability
Designed for broadband operation (2300 MHz to 2400 MHz)
Asymmetric design to achieve optimum efficiency across the band
Lower output capacitance for improved performance in Doherty applications
Designed for low memory effects providing excellent digital pre-distortion capability
Internally matched for ease of use
Integrated ESD protection
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
RF power amplifiers for base stations and multi carrier applications in the 2300 MHz to
2400 MHz frequency range
BLC8G24LS-241AV
Power LDMOS transistor
2. Pinning information
Table 2.
Pinning
Pin Description
Simplified outline
Graphic symbol
1
2
3
4
5
6
7
8
9
drain2 (peak)
drain1 (main)
gate1 (main)
gate2 (peak)
source
6
9
8
2
2
3
1
4
6
7
3
5
4
[1]
7
8
video decoupling (main)
n.c.
9
1
n.c.
aaa-009150
video decoupling (peak)
[1] Connected to flange.
3. Ordering information
Table 3.
Ordering information
Type number
Package
Name Description
Version
BLC8G24LS-241AV
-
air cavity plastic earless flanged package; 8 leads
SOT1252-1
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VDS
Parameter
Conditions
Min Max
- 65
Unit
V
drain-source voltage
VGS(amp)main
VGS(amp)peak
Tstg
main amplifier gate-source voltage
peak amplifier gate-source voltage
storage temperature
0.5 +13
0.5 +13
V
V
65 +150 C
[1]
Tj
junction temperature
-
225
C
[1] Continuous use at maximum temperature will affect the reliability, for details refer to the online MTF
calculator.
5. Thermal characteristics
Table 5.
Symbol Parameter
Rth(j-c) thermal resistance from junction VDS = 28 V; IDq = 500 mA (main);
Thermal characteristics
Conditions
Typ
Unit
0.26
K/W
to case
VGS(amp)peak = 0.30 V; Tcase = 80 C;
PL = 56 W
BLC8G24LS-241AV
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© Ampleon Netherlands B.V. 2016. All rights reserved.
Product data sheet
Rev. 2 — 2 December 2016
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BLC8G24LS-241AV
Power LDMOS transistor
6. Characteristics
Table 6.
DC characteristics
Tj = 25 C unless otherwise specified.
Symbol Parameter
Conditions
Min
Typ
Max Unit
Main device
V(BR)DSS drain-source breakdown voltage VGS = 0 V; ID = 1.44 mA 65
-
-
V
V
VGS(th)
IDSS
gate-source threshold voltage
drain leakage current
VDS = 10 V; ID = 144 mA 1.5
1.9
-
2.3
VGS = 0 V; VDS = 28 V
-
-
2.8 A
IDSX
drain cut-off current
VGS = VGS(th) + 3.75 V;
VDS = 10 V
27
-
A
IGSS
gfs
gate leakage current
VGS = 11 V; VDS = 0 V
-
-
-
-
280 nA
forward transconductance
VDS = 10 V; ID = 144 mA
1.27
100
-
S
RDS(on)
drain-source on-state resistance VGS = VGS(th) + 3.75 V;
ID = 5.04 A
166 m
Peak device
V(BR)DSS drain-source breakdown voltage VGS = 0 V; ID = 2.2 mA
65
-
-
V
V
VGS(th)
IDSS
gate-source threshold voltage
drain leakage current
VDS = 10 V; ID = 220 mA 1.5
1.9
-
2.3
VGS = 0 V; VDS = 28 V
-
-
2.8 A
IDSX
drain cut-off current
VGS = VGS(th) + 3.75 V;
VDS = 10 V
41
-
A
IGSS
gfs
gate leakage current
VGS = 11 V; VDS = 0 V
-
-
-
-
280 nA
forward transconductance
VDS = 10 V; ID = 220 mA
1.94
69
-
S
RDS(on)
drain-source on-state resistance VGS = VGS(th) + 3.75 V;
ID = 7.7 A
112 m
Table 7.
RF characteristics
Test signal: 1-carrier W-CDMA; PAR = 7.2 dB at 0.01 % probability on the CCDF;
3GPP test model 1; 1 to 64 DPCH; f1 = 2300 MHz; f2 = 2400 MHz; RF performance at VDS = 28 V;
IDq = 500 mA (main); VGS(amp)peak = 0.30 V; Tcase = 25 C; unless otherwise specified; in an
asymmetrical Doherty production test circuit in 2300 MHz to 2400 MHz.
Symbol
Gp
Parameter
Conditions
Min
13.3
-
Typ Max
14.5
10 6
43
29 25
Unit
dB
power gain
PL(AV) = 56 W
PL(AV) = 56 W
PL(AV) = 56 W
PL(AV) = 56 W
-
RLin
input return loss
drain efficiency
adjacent channel power ratio
dB
D
38
-
-
%
ACPR
dBc
Table 8.
RF characteristics
Test signal: pulsed CW; tp = 100 s; = 10 %; f = 2400 MHz; RF performance at VDS = 28 V;
IDq = 500 mA (main); VGS(amp)peak = 0.30 V; Tcase = 25 C; unless otherwise specified; tested in an
asymmetrical Doherty production test circuit in 2300 MHz to 2400 MHz.
Symbol Parameter
PL(3dB) output power at 3 dB gain compression
Conditions
Min Typ Max Unit
255 290
-
W
BLC8G24LS-241AV
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© Ampleon Netherlands B.V. 2016. All rights reserved.
Product data sheet
Rev. 2 — 2 December 2016
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BLC8G24LS-241AV
Power LDMOS transistor
7. Test information
7.1 Ruggedness in class-AB operation
The BLC8G24LS-241AV is capable of withstanding a load mismatch corresponding to
VSWR = 10 : 1 through all phases under the following conditions: VDS = 28 V;
IDq = 500 mA (main); VGS(amp)peak = 0.30 V; PL = 240 W (CW); f = 2300 MHz.
7.2 Impedance information
Table 9.
Typical impedance of main device
Measured load-pull data of main device; IDq = 1000 mA; VDS = 28 V. Typical values unless otherwise
specified.
[1]
[1]
[2]
[2]
[2]
f
ZS
()
ZL
PL
D
Gp
(MHz)
()
(W)
(%)
(dB)
Maximum power load
2300
2350
2400
1.1 j3.5
1.6 j3.6
1.9 j4.5
1.6 j4.4
1.7 j4.5
1.5 j4.6
171
178
175
56.20
57.60
55.10
15.2
15.3
16.0
Maximum drain efficiency load
2300
2350
2400
1.1 j3.5
1.6 j3.6
1.9 j4.5
3.1 j3.5
2.7 j3.3
2.4 j3.5
127
130
131
65.50
65.30
64.70
17.1
17.4
18.1
[1] ZS and ZL defined in Figure 1.
[2] at 3 dB gain compression.
Table 10. Typical impedance of peak device
Measured load-pull data of peak device; IDq = 1230 mA; VDS = 28 V. Typical values unless otherwise
specified.
[1]
[1]
[2]
[2]
[2]
f
ZS
()
ZL
PL
D
Gp
(MHz)
()
(W)
(%)
(dB)
Maximum power load
2300
2350
2400
1.0 j5.3
1.9 j5.4
2.1 j6.5
4.0 j4.5
3.9 j4.5
4.6 j4.5
252
248
245
55.30
55.00
53.80
16.5
16.1
16.8
Maximum drain efficiency load
2300
2350
2400
1.0 j5.3
1.9 j5.4
2.1 j6.5
2.7 j2.4
2.2 j2.5
2.3 j2.7
190
175
176
63.90
63.70
63.00
18.3
18.1
18.8
[1] ZS and ZL defined in Figure 1.
[2] at 3 dB gain compression.
BLC8G24LS-241AV
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© Ampleon Netherlands B.V. 2016. All rights reserved.
Product data sheet
Rev. 2 — 2 December 2016
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BLC8G24LS-241AV
Power LDMOS transistor
drain
Z
L
gate
Z
S
001aaf059
Fig 1. Definition of transistor impedance
7.3 VBW in Doherty operation
The BLC8G24LS-241AV shows 80 MHz (typical) video bandwidth in Doherty test circuit in
2.35 GHz at VDS = 28 V; IDq = 500 mA and VGS(amp)peak = 0.30 V.
7.4 Test circuit
50 mm
50 mm
C10
C11
C2
C1
C12
C3
C9
R1
C4
C13
R3
80 mm
C15
C14
R2
C5
C16
C17
C18
C8 C7 C6
C19
aaa-013314
Printed-Circuit Board (PCB): Rogers 4350B, thickness = 0.508 mm.
See Table 11 for a list of components.
Fig 2. Component layout
BLC8G24LS-241AV
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© Ampleon Netherlands B.V. 2016. All rights reserved.
Product data sheet
Rev. 2 — 2 December 2016
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BLC8G24LS-241AV
Power LDMOS transistor
Table 11. List of components
For test circuit see Figure 2.
Component
Description
Value
Remarks
Murata
C1, C8, C11, C18 multilayer ceramic chip capacitor 10 F
C2, C7, C10, C17 multilayer ceramic chip capacitor 1 F
Murata
C3, C4, C5, C6,
multilayer ceramic chip capacitor 12 pF
ATC 800B
C9, C13, C14, C16
C12, C19
C15
electrolytic capacitor
2200 F, 50 V
multilayer ceramic chip capacitor 0.8 pF
ATC 600F
R1, R2
R3
resistor
resistor
9.1
50
Vishay Dale: SMD 0805
Vishay Dale: SMD 0805
7.5 Graphical data
7.5.1 Pulsed CW
aaa-010117
16
60
50
40
30
20
10
G
ηη
D
(%)
p
(dB)
G
p
15
14
13
12
11
((11))))
((22))))
((33))))
η
D
42
44
46
48
50
52
54
56
P
(dBm)
L
VDS = 28 V; IDq = 500 mA (main); VGS(amp)peak = 0.30 V.
(1) f = 2300 MHz
(2) f = 2350 MHz
(3) f = 2400 MHz
Fig 3. Power gain and drain efficiency as function of output power; typical values
BLC8G24LS-241AV
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© Ampleon Netherlands B.V. 2016. All rights reserved.
Product data sheet
Rev. 2 — 2 December 2016
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BLC8G24LS-241AV
Power LDMOS transistor
7.5.2 1-Carrier W-CDMA
aaa-010118
aaa-010119
16
60
56
52
48
44
40
-25
5M
-25
G
ηη
ACPR
(dBc)
ACPR
10M
p
D
(dB)
(%)
(dBc)
15.5
15
-35
-35
-45
-55
-65
G
ACPR
5M
p
(1)
(2)
(3)
((11))))
((22))))
((33))))
-45
-55
-65
14.5
14
(1)
(2)
(3)
ACPR
10MM
η
D
13.5
45.5
46
46.5
47
47.5
48
45.8
46.2
46.6
47
47.4
47.8
P
(dBm)
P
L
(dBm)
L
VDS = 28 V; IDq = 500 mA (main); VGS(amp)peak = 0.30 V.
VDS = 28 V; IDq = 500 mA (main); VGS(amp)peak = 0.30 V.
(1) f = 2300 MHz
(2) f = 2350 MHz
(3) f = 2400 MHz
(1) f = 2300 MHz
(2) f = 2350 MHz
(3) f = 2400 MHz
Fig 4. Power gain and drain efficiency as function of
output power; typical values
Fig 5. Adjacent channel power ratio (5 MHz) and
adjacent channel power ratio (10 MHz) as
function of output power; typical values
7.5.3 2-Tone VBW
aaa-011089
0
IMDD
(dBc)
(1))
(2))
-20
IMDD33
IMDD55
-40
(1))
(2))
IMDD77
-60
(1))
(2))
-80
1
2
3
10
10
10
carrier spacing (MHz)
VDS = 28 V; IDq = 500 mA (main); VGS(amp)peak = 0.30 V.
(1) IMD low
(2) IMD high
Fig 6. VBW capability in Doherty demo board
BLC8G24LS-241AV
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© Ampleon Netherlands B.V. 2016. All rights reserved.
Product data sheet
Rev. 2 — 2 December 2016
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BLC8G24LS-241AV
Power LDMOS transistor
8. Package outline
Air cavity plastic earless flanged package; 8 leads
SOT1252-1
D
F
A
5
w
D
1
B
1
v
A
U
B
c
1
y
6
2
1
9
H
U
2
E
1
E
A
7
3
4
8
Q
e
w
b
b
B
2
1
e
1
0
5
10 mm
y
scale
0.10
Dimensions
Unit
(1)
A
b
b
c
D
D
E
E
e
e
F
H
Q
U
U
v
w
w
2
1
1
1
1
1
2
1
max 4.65
mm nom
min 4.18
1.37 11.78 0.20 31.44 31.34 9.60
9.50
1.83 19.71 2.33 32.33 10.23 0.50 0.50 0.50
1.63 19.51 2.13 32.13 10.03
13.72 29.46
1.17 11.58 0.10 31.04 31.14 9.20
9.30
Note
1. Dimension Q is measured 0.1 mm away from the flange.
2. Ringframe and/or ringframe glue shall not overhang at the side of the flange.
sot1252-1_po
References
Outline
version
European
Issue date
projection
IEC
JEDEC
JEITA
15-06-09
16-10-04
SOT1252-1
Fig 7. Package outline SOT1252-1
BLC8G24LS-241AV
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© Ampleon Netherlands B.V. 2016. All rights reserved.
Product data sheet
Rev. 2 — 2 December 2016
8 of 12
BLC8G24LS-241AV
Power LDMOS transistor
9. Handling information
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling
electrostatic sensitive devices.
Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or
equivalent standards.
Table 12. ESD sensitivity
ESD model
Class
C2A [1]
2 [2]
Charged Device Model (CDM); According to ANSI/ESDA/JEDEC standard JS-002
Human Body Model (HBM); According to ANSI/ESDA/JEDEC standard JS-001
[1] CDM classification C2A is granted to any part that passes after exposure to an ESD pulse of 500 V, but fails
after exposure to an ESD pulse of 750 V.
[2] HBM classification 2 is granted to any part that passes after exposure to an ESD pulse of 2000 V, but fails
after exposure to an ESD pulse of 4000 V.
10. Abbreviations
Table 13. Abbreviations
Acronym
3GPP
CCDF
CW
Description
3rd Generation Partnership Project
Complementary Cumulative Distribution Function
Continuous Wave
DPCH
ESD
Dedicated Physical CHannel
ElectroStatic Discharge
LDMOS
MTF
Laterally Diffused Metal-Oxide Semiconductor
Median Time to Failure
PAR
Peak-to-Average Ratio
SMD
Surface Mounted Device
VBW
Video Bandwidth
VSWR
W-CDMA
Voltage Standing Wave Ratio
Wideband Code Division Multiple Access
11. Revision history
Table 14. Revision history
Document ID
Release date
20161202
Data sheet status
Change notice
Supersedes
BLC8G24LS-241AV v.2
Modifications:
Product data sheet
-
BLC8G24LS-241AV v.1
• Figure 7 on page 8: updated package outline drawing SOT1252-1
• Section 9 on page 9: updated Handling information
BLC8G24LS-241AV v.1
20160209
Product data sheet
-
-
BLC8G24LS-241AV
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© Ampleon Netherlands B.V. 2016. All rights reserved.
Product data sheet
Rev. 2 — 2 December 2016
9 of 12
BLC8G24LS-241AV
Power LDMOS transistor
12. Legal information
12.1 Data sheet status
Document status[1][2]
Product status[3]
Development
Definition
Objective [short] data sheet
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Preliminary [short] data sheet Qualification
Product [short] data sheet Production
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term ‘short data sheet’ is explained in section “Definitions”.
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.ampleon.com.
Ampleon product can reasonably be expected to result in personal injury,
12.2 Definitions
death or severe property or environmental damage. Ampleon and its
suppliers accept no liability for inclusion and/or use of Ampleon products in
such equipment or applications and therefore such inclusion and/or use is at
the customer’s own risk.
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. Ampleon does not give any representations or
warranties as to the accuracy or completeness of information included herein
and shall have no liability for the consequences of use of such information.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. Ampleon makes no representation
or warranty that such applications will be suitable for the specified use without
further testing or modification.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local Ampleon sales office. In
case of any inconsistency or conflict with the short data sheet, the full data
sheet shall prevail.
Customers are responsible for the design and operation of their applications
and products using Ampleon products, and Ampleon accepts no liability for
any assistance with applications or customer product design. It is customer’s
sole responsibility to determine whether the Ampleon product is suitable and
fit for the customer’s applications and products planned, as well as for the
planned application and use of customer’s third party customer(s). Customers
should provide appropriate design and operating safeguards to minimize the
risks associated with their applications and products.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
Ampleon and its customer, unless Ampleon and customer have explicitly
agreed otherwise in writing. In no event however, shall an agreement be valid
in which the Ampleon product is deemed to offer functions and qualities
beyond those described in the Product data sheet.
Ampleon does not accept any liability related to any default, damage, costs or
problem which is based on any weakness or default in the customer’s
applications or products, or the application or use by customer’s third party
customer(s). Customer is responsible for doing all necessary testing for the
customer’s applications and products using Ampleon products in order to
avoid a default of the applications and the products or of the application or
use by customer’s third party customer(s). Ampleon does not accept any
liability in this respect.
12.3 Disclaimers
Limited warranty and liability — Information in this document is believed to
be accurate and reliable. However, Ampleon does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information. Ampleon takes no responsibility for
the content in this document if provided by an information source outside of
Ampleon.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
In no event shall Ampleon be liable for any indirect, incidental, punitive,
special or consequential damages (including - without limitation - lost profits,
lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Terms and conditions of commercial sale — Ampleon products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.ampleon.com/terms, unless otherwise agreed in a valid written
individual agreement. In case an individual agreement is concluded only the
terms and conditions of the respective agreement shall apply. Ampleon
hereby expressly objects to applying the customer’s general terms and
conditions with regard to the purchase of Ampleon products by customer.
Notwithstanding any damages that customer might incur for any reason
whatsoever, Ampleon’s aggregate and cumulative liability towards customer
for the products described herein shall be limited in accordance with the
Terms and conditions of commercial sale of Ampleon.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Right to make changes — Ampleon reserves the right to make changes to
information published in this document, including without limitation
specifications and product descriptions, at any time and without notice. This
document supersedes and replaces all information supplied prior to the
publication hereof.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from competent authorities.
Suitability for use — Ampleon products are not designed, authorized or
warranted to be suitable for use in life support, life-critical or safety-critical
systems or equipment, nor in applications where failure or malfunction of an
BLC8G24LS-241AV
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© Ampleon Netherlands B.V. 2016. All rights reserved.
Product data sheet
Rev. 2 — 2 December 2016
10 of 12
BLC8G24LS-241AV
Power LDMOS transistor
Non-automotive qualified products — Unless this data sheet expressly
states that this specific Ampleon product is automotive qualified, the product
is not suitable for automotive use. It is neither qualified nor tested in
accordance with automotive testing or application requirements. Ampleon
accepts no liability for inclusion and/or use of non-automotive qualified
products in automotive equipment or applications.
Translations — A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
12.4 Trademarks
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards, customer
(a) shall use the product without Ampleon’ warranty of the product for such
automotive applications, use and specifications, and (b) whenever customer
uses the product for automotive applications beyond Ampleon’ specifications
such use shall be solely at customer’s own risk, and (c) customer fully
indemnifies Ampleon for any liability, damages or failed product claims
resulting from customer design and use of the product for automotive
applications beyond Ampleon’ standard warranty and Ampleon’ product
specifications.
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
Any reference or use of any ‘NXP’ trademark in this document or in or on the
surface of Ampleon products does not result in any claim, liability or
entitlement vis-à-vis the owner of this trademark. Ampleon is no longer part of
the NXP group of companies and any reference to or use of the ‘NXP’
trademarks will be replaced by reference to or use of Ampleon’s own
trademarks.
13. Contact information
For more information, please visit: http://www.ampleon.com
For sales office addresses, please visit: http://www.ampleon.com/sales
BLC8G24LS-241AV
All information provided in this document is subject to legal disclaimers.
© Ampleon Netherlands B.V. 2016. All rights reserved.
Product data sheet
Rev. 2 — 2 December 2016
11 of 12
BLC8G24LS-241AV
Power LDMOS transistor
14. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1
1.2
1.3
General description . . . . . . . . . . . . . . . . . . . . . 1
Features and benefits. . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
2
3
4
5
6
Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
Ordering information. . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics . . . . . . . . . . . . . . . . . . 2
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 3
7
7.1
7.2
7.3
7.4
7.5
7.5.1
7.5.2
7.5.3
Test information. . . . . . . . . . . . . . . . . . . . . . . . . 4
Ruggedness in class-AB operation . . . . . . . . . 4
Impedance information . . . . . . . . . . . . . . . . . . . 4
VBW in Doherty operation . . . . . . . . . . . . . . . . 5
Test circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Graphical data . . . . . . . . . . . . . . . . . . . . . . . . . 6
Pulsed CW . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
1-Carrier W-CDMA . . . . . . . . . . . . . . . . . . . . . . 7
2-Tone VBW . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
8
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8
Handling information. . . . . . . . . . . . . . . . . . . . . 9
Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Revision history. . . . . . . . . . . . . . . . . . . . . . . . . 9
9
10
11
12
Legal information. . . . . . . . . . . . . . . . . . . . . . . 10
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 10
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 11
12.1
12.2
12.3
12.4
13
14
Contact information. . . . . . . . . . . . . . . . . . . . . 11
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© Ampleon Netherlands B.V. 2016.
All rights reserved.
For more information, please visit: http://www.ampleon.com
For sales office addresses, please visit: http://www.ampleon.com/sales
Date of release: 2 December 2016
Document identifier: BLC8G24LS-241AV
相关型号:
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