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BLF8G22LS-270V,118 [ETC]

RF FET LDMOS 65V 17.3DB SOT1244B;
BLF8G22LS-270V,118
型号： BLF8G22LS-270V,118
厂家： ETC    ETC
描述：

RF FET LDMOS 65V 17.3DB SOT1244B
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BLF8G22LS-270V;  
BLF8G22LS-270GV  
Power LDMOS transistor  
Rev. 3 — 1 September 2015  
Product data sheet  
1. Product profile  
1.1 General description  
270 W LDMOS power transistor with improved video bandwidth for base station  
applications at frequencies from 2110 MHz to 2170 MHz.  
Table 1.  
Typical performance  
Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit, tested  
on straight lead device.  
Test signal  
f
IDq  
VDS  
(V)  
28  
PL(AV)  
(W)  
Gp  
D  
ACPR5M  
(dBc)  
29 [1]  
(MHz)  
(mA)  
(dB)  
17.3  
(%)  
29  
2-carrier W-CDMA  
2110 to 2170 2400  
80  
[1] 3GPP test model 1; 64 DPCH; PAR = 8.4 dB at 0.01 % probability on CCDF; 5 MHz carrier spacing.  
1.2 Features and benefits  
Excellent ruggedness  
High efficiency  
Low Rth providing excellent thermal stability  
Designed for broadband operation  
Decoupling leads to enable improved video bandwidth (80 MHz typical)  
Lower output capacitance for improved performance in Doherty applications  
Designed for low memory effects providing excellent pre-distortability  
Internally matched for ease of use  
Integrated ESD protection  
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances  
(RoHS)  
1.3 Applications  
RF power amplifiers for base stations and multi carrier applications in the 2110 MHz to  
2170 MHz frequency range  
BLF8G22LS-270(G)V  
Power LDMOS transistor  
2. Pinning information  
Table 2.  
Pin  
Pinning  
Description  
Simplified outline  
Graphic symbol  
BLF8G22LS-270V (SOT1244B)  
1
2
3
4
5
6
7
drain  
4
1
5
1
gate  
4,5  
6,7  
2
[1]  
source  
video lead  
video lead  
n.c.  
3
3
aaa-003619  
6
2
7
n.c.  
BLF8G22LS-270GV (SOT1244C)  
1
2
3
4
5
6
7
drain  
4
1
5
1
gate  
4,5  
6,7  
2
[1]  
source  
video lead  
video lead  
n.c.  
3
aaa-003619  
6
2
7
3
n.c.  
[1] Connected to flange.  
3. Ordering information  
Table 3.  
Ordering information  
Type number  
Package  
Name Description  
Version  
BLF8G22LS-270V  
-
earless flanged ceramic package; 6 leads  
earless flanged ceramic package; 6 leads  
SOT1244B  
SOT1244C  
BLF8G22LS-270GV -  
4. Limiting values  
Table 4.  
Limiting values  
In accordance with the Absolute Maximum Rating System (IEC 60134).  
Symbol  
VDS  
Parameter  
Conditions  
Min  
Max  
Unit  
V
drain-source voltage  
gate-source voltage  
storage temperature  
junction temperature  
-
65  
VGS  
Tstg  
0.5 +13  
V
65  
+150 C  
Tj  
-
225  
C  
BLF8G22LS-270V_8G22LS-270GV#3  
All information provided in this document is subject to legal disclaimers.  
© Ampleon The Netherlands B.V. 2015. All rights reserved.  
Product data sheet  
Rev. 3 — 1 September 2015  
2 of 16  
BLF8G22LS-270(G)V  
Power LDMOS transistor  
5. Thermal characteristics  
Table 5.  
Thermal characteristics  
Symbol Parameter  
Conditions  
Typ  
Unit  
Rth(j-c)  
thermal resistance from junction to case Tcase = 80 C; PL = 50 W  
0.26 K/W  
6. Characteristics  
Table 6.  
DC characteristics  
Tj = 25 C; per section unless otherwise specified.  
Symbol Parameter  
Conditions  
Min Typ Max Unit  
V(BR)DSS drain-source breakdown voltage VGS = 0 V; ID = 4.5 mA  
65  
-
-
V
V
VGS(th)  
IDSS  
gate-source threshold voltage  
drain leakage current  
VDS = 10 V; ID = 450 mA  
VGS = 0 V; VDS = 28 V  
1.5 1.8 2.3  
-
-
-
4.2 A  
IDSX  
drain cut-off current  
VGS = VGS(th) + 3.75 V;  
VDS = 10 V  
80  
-
A
IGSS  
gfs  
gate leakage current  
VGS = 11 V; VDS = 0 V  
-
-
-
-
420 nA  
forward transconductance  
VDS = 10 V; ID = 450 mA  
3.8  
-
S
RDS(on)  
drain-source on-state resistance VGS = VGS(th) + 3.75 V;  
ID = 15.75 A  
0.04 -  
Table 7.  
RF characteristics  
Test signal: 2-carrier W-CDMA; PAR = 8.4 dB at 0.01 % probability on the CCDF; 3GPP test  
model 1; 1-64 DPCH; f1 = 2112.5 MHz; f2 = 2117.5 MHz; f3 = 2162.5 MHz; f4 = 2167.5 MHz;  
RF performance at VDS = 28 V; IDq = 2400 mA; Tcase = 25 C; unless otherwise specified; in a  
class-AB production test circuit, tested on straight lead device.  
Symbol Parameter  
Conditions  
Min  
Typ  
Max Unit  
Gp  
power gain  
PL(AV) = 80 W  
PL(AV) = 80 W  
PL(AV) = 80 W  
PL(AV) = 80 W  
16.3 17.3  
-
dB  
dB  
%
RLin  
D  
input return loss  
drain efficiency  
-
17  
29  
7  
-
26  
-
ACPR5M adjacent channel power ratio (5 MHz)  
29  
26.5 dBc  
7. Test information  
7.1 Ruggedness in class-AB operation  
The BLF8G22LS-270V and BLF8G22LS-270GV are capable of withstanding a load  
mismatch corresponding to VSWR = 10 : 1 through all phases under the following  
conditions: VDS = 28 V; IDq = 2400 mA; PL = 270 W (CW); f = 2110 MHz.  
BLF8G22LS-270V_8G22LS-270GV#3  
All information provided in this document is subject to legal disclaimers.  
© Ampleon The Netherlands B.V. 2015. All rights reserved.  
Product data sheet  
Rev. 3 — 1 September 2015  
3 of 16  
BLF8G22LS-270(G)V  
Power LDMOS transistor  
7.2 Impedance information  
Table 8.  
Typical impedance information  
IDq = 2400 mA; main transistor VDS = 28 V.  
ZS and ZL defined in Figure 1.  
f
ZS  
ZL  
(MHz)  
()  
()  
BLF8G22LS-270V  
2110  
0.68 j4.73  
0.80 j4.94  
0.96 j5.37  
2.42 j2.08  
2.67 j2.24  
2.68 j2.24  
2140  
2170  
BLF8G22LS-270GV  
2110  
2140  
2170  
1.23 j6.94  
1.43 j7.42  
1.44 j7.50  
2.39 j4.22  
2.68 j4.22  
2.90 j4.30  
drain  
Z
L
gate  
Z
S
001aaf059  
Fig 1. Definition of transistor impedance  
BLF8G22LS-270V_8G22LS-270GV#3  
All information provided in this document is subject to legal disclaimers.  
© Ampleon The Netherlands B.V. 2015. All rights reserved.  
Product data sheet  
Rev. 3 — 1 September 2015  
4 of 16  
BLF8G22LS-270(G)V  
Power LDMOS transistor  
7.3 Test circuit  
50 mm  
50 mm  
C8  
C12  
C16  
C5  
C10  
C17  
60 mm  
C6  
C9  
C18  
C15  
BLF8G22LS-270V rev1  
C7  
C11  
BLF8G22LS-270V rev1  
aaa-005384  
Printed-Circuit Board (PCB): Taconic RF-35; r = 3.5; thickness = 0.76 mm.  
See Table 9 for list of components.  
Fig 2. Component layout for test circuit  
Table 9.  
List of components  
For test circuit, see Figure 2.  
Component  
C1, C2  
Description  
Value  
Remarks  
ATC100B  
ATC100B  
Murata  
multilayer ceramic chip capacitor  
multilayer ceramic chip capacitor  
multilayer ceramic chip capacitor  
multilayer ceramic chip capacitor  
multilayer ceramic chip capacitor  
0.7 pF  
C3  
47 pF  
C4, C5, C17, C18  
C6  
4.7 F, 50 V  
33 pF  
ATC100B  
ATC100B  
ATC100B  
ATC100B  
C7, C8  
12 pF  
C9, C10, C11, C12 multilayer ceramic chip capacitor  
100 pF  
0.2 pF  
C13  
multilayer ceramic chip capacitor  
multilayer ceramic chip capacitor  
electrolytic capacitor  
C14  
10 F, 50 V  
470 F, 63 V  
5.1   
Murata; SMD 2220  
C15, C16  
R1  
resistor  
SMD 1206;  
tolerance = 1 %  
BLF8G22LS-270V_8G22LS-270GV#3  
All information provided in this document is subject to legal disclaimers.  
© Ampleon The Netherlands B.V. 2015. All rights reserved.  
Product data sheet  
Rev. 3 — 1 September 2015  
5 of 16  
BLF8G22LS-270(G)V  
Power LDMOS transistor  
7.4 Graphs  
7.4.1 Pulsed CW  
aaa-005385  
aaa-005386  
19  
18  
17  
16  
15  
14  
60  
50  
40  
30  
20  
10  
0
G
η
D
(%)  
p
(dB)  
(3)  
(2)  
(1)  
(3))  
(2))  
(1))  
42  
44  
46  
48  
50  
52  
54  
56  
58  
42  
44  
46  
48  
50  
52  
54  
P (dBm)  
L
56  
58  
P
(dBm)  
L
VDS = 28 V; IDq = 2400 mA; tp = 100 s; = 10 %.  
VDS = 28 V; IDq = 2400 mA; tp = 100 s; = 10 %.  
(1) f = 2110 MHz  
(2) f = 2140 MHz  
(3) f = 2170 MHz  
(1) f = 2110 MHz  
(2) f = 2140 MHz  
(3) f = 2170 MHz  
Fig 3. Power gain as a function of output power;  
typical values  
Fig 4. Drain efficiency as a function of output power;  
typical values  
BLF8G22LS-270V_8G22LS-270GV#3  
All information provided in this document is subject to legal disclaimers.  
© Ampleon The Netherlands B.V. 2015. All rights reserved.  
Product data sheet  
Rev. 3 — 1 September 2015  
6 of 16  
BLF8G22LS-270(G)V  
Power LDMOS transistor  
7.4.2 IS-95  
aaa-005387  
aaa-005388  
20  
19  
18  
17  
16  
15  
50  
40  
30  
20  
10  
0
G
η
D
(%)  
p
(dB)  
(3)  
(2)  
(1)  
(3))  
(2))  
(1))  
39  
41  
43  
45  
47  
49  
P
51  
53  
55  
39  
41  
43  
45  
47  
49  
51  
(dBm)  
L(AV)  
53  
55  
(dBm)  
P
L(AV)  
VDS = 28 V; IDq = 2400 mA.  
VDS = 28 V; IDq = 2400 mA.  
(1) f = 2110 MHz  
(2) f = 2140 MHz  
(3) f = 2170 MHz  
(1) f = 2110 MHz  
(2) f = 2140 MHz  
(3) f = 2170 MHz  
Fig 5. Power gain as a function of average output  
power; typical values  
Fig 6. Drain efficiency as a function of average  
output power; typical values  
aaa-005389  
aaa-005390  
-30  
8855kk  
(dBc)  
-50  
ACPR  
ACPR  
198800kk  
(dBc)  
-55  
-60  
-65  
-70  
-75  
-80  
-40  
-50  
-60  
-70  
(1))  
(2))  
(3))  
(1))  
(2))  
(3))  
39  
41  
43  
45  
47  
49  
P
51  
53  
55  
39  
41  
43  
45  
47  
49  
51  
(dBm)  
L(AV)  
53  
55  
(dBm)  
P
L(AV)  
VDS = 28 V; IDq = 2400 mA.  
VDS = 28 V; IDq = 2400 mA.  
(1) f = 2110 MHz  
(2) f = 2140 MHz  
(3) f = 2170 MHz  
(1) f = 2110 MHz  
(2) f = 2140 MHz  
(3) f = 2170 MHz  
Fig 7. Adjacent channel power ratio (885 kHz) as a  
function of average output power;  
typical values  
Fig 8. Adjacent channel power ratio (1980 kHz) as a  
function of average output power;  
typical values  
BLF8G22LS-270V_8G22LS-270GV#3  
All information provided in this document is subject to legal disclaimers.  
© Ampleon The Netherlands B.V. 2015. All rights reserved.  
Product data sheet  
Rev. 3 — 1 September 2015  
7 of 16  
BLF8G22LS-270(G)V  
Power LDMOS transistor  
aaa-005391  
aaa-005392  
12  
10  
8
58  
PARR  
(dB)  
P
L(MM))  
(dBm)  
56  
54  
52  
50  
48  
(1)  
(2)  
(3)  
(1))  
(2))  
(3))  
6
4
2
39  
41  
43  
45  
47  
49  
P
51  
53  
55  
39  
41  
43  
45  
47  
49  
51  
(dBm)  
L(AV)  
53  
55  
(dBm)  
P
L(AV)  
VDS = 28 V; IDq = 2400 mA.  
VDS = 28 V; IDq = 2400 mA.  
(1) f = 2110 MHz  
(2) f = 2140 MHz  
(3) f = 2170 MHz  
(1) f = 2110 MHz  
(2) f = 2140 MHz  
(3) f = 2170 MHz  
Fig 9. Peak-to-average power ratio as a function of  
average output power; typical values  
Fig 10. Peak output power ratio as a function of  
average output power; typical values  
7.4.3 1-carrier W-CDMA  
aaa-005393  
aaa-005394  
19  
50  
G
η
D
(%)  
p
(dB)  
18  
17  
16  
15  
14  
40  
30  
20  
10  
0
(3)  
(2)  
(1)  
(3))  
(2))  
(1))  
42  
44  
46  
48  
50  
52  
54  
56  
42  
44  
46  
48  
50  
52  
54  
56  
P
(dBm)  
P
(dBm)  
L(AV)  
L(AV)  
VDS = 28 V; IDq = 2400 mA.  
VDS = 28 V; IDq = 2400 mA.  
(1) f = 2112.5 MHz  
(2) f = 2140 MHz  
(3) f = 2167.5 MHz  
(1) f = 2112.5 MHz  
(2) f = 2140 MHz  
(3) f = 2167.5 MHz  
Fig 11. Power gain as a function of average output  
power; typical values  
Fig 12. Drain efficiency as a function of average  
output power; typical values  
BLF8G22LS-270V_8G22LS-270GV#3  
All information provided in this document is subject to legal disclaimers.  
© Ampleon The Netherlands B.V. 2015. All rights reserved.  
Product data sheet  
Rev. 3 — 1 September 2015  
8 of 16  
BLF8G22LS-270(G)V  
Power LDMOS transistor  
aaa-005395  
aaa-005396  
8
6
4
2
0
0
PARR  
(dB)  
RL  
in  
(dB)  
-5  
(1)  
(2)  
(3)  
-10  
-15  
-20  
-25  
(1))  
(2))  
(3))  
42  
44  
46  
48  
50  
52  
54  
56  
42  
44  
46  
48  
50  
52  
54  
56  
P
(dBm)  
P
(dBm)  
L(AV)  
L(AV)  
VDS = 28 V; IDq = 2400 mA.  
VDS = 28 V; IDq = 2400 mA.  
(1) f = 2112.5 MHz  
(2) f = 2140 MHz  
(3) f = 2167.5 MHz  
(1) f = 2112.5 MHz  
(2) f = 2140 MHz  
(3) f = 2167.5 MHz  
Fig 13. Peak-to-average power ratio as a function of  
average output power; typical values  
Fig 14. Input return loss as a function of average  
output power; typical values  
7.4.4 2-carrier W-CDMA  
aaa-005397  
aaa-005398  
19  
50  
G
η
D
(%)  
p
(dB)  
18  
17  
16  
15  
14  
40  
30  
20  
10  
0
(3))  
(2))  
(1))  
(3)  
(2)  
(1)  
42  
44  
46  
48  
50  
52  
54  
56  
42  
44  
46  
48  
50  
52  
54  
56  
P
(dBm)  
P
(dBm)  
L(AV)  
L(AV)  
VDS = 28 V; IDq = 2400 mA; 5 MHz carrier spacing.  
VDS = 28 V; IDq = 2400 mA; 5 MHz carrier spacing.  
(1) f = 2115 MHz  
(2) f = 2140 MHz  
(3) f = 2165 MHz  
(1) f = 2115 MHz  
(2) f = 2140 MHz  
(3) f = 2165 MHz  
Fig 15. Power gain as a function of average output  
power; typical values  
Fig 16. Drain efficiency as a function of average  
output power; typical values  
BLF8G22LS-270V_8G22LS-270GV#3  
All information provided in this document is subject to legal disclaimers.  
© Ampleon The Netherlands B.V. 2015. All rights reserved.  
Product data sheet  
Rev. 3 — 1 September 2015  
9 of 16  
BLF8G22LS-270(G)V  
Power LDMOS transistor  
aaa-005399  
aaa-005400  
-15  
5M  
-20  
ACPR  
ACPR  
10MM  
(dBc)  
(dBc)  
-20  
-25  
-30  
-35  
-40  
-45  
-50  
-25  
-30  
-35  
-40  
-45  
(1))  
(2))  
(3))  
(1))  
(2))  
(3))  
42  
44  
46  
48  
50  
52  
54  
56  
42  
44  
46  
48  
50  
52  
54  
56  
P
(dBm)  
P
(dBm)  
L(AV)  
L(AV)  
VDS = 28 V; IDq = 2400 mA; 5 MHz carrier spacing.  
VDS = 28 V; IDq = 2400 mA; 5 MHz carrier spacing.  
(1) f = 2115 MHz  
(2) f = 2140 MHz  
(3) f = 2165 MHz  
(1) f = 2115 MHz  
(2) f = 2140 MHz  
(3) f = 2165 MHz  
Fig 17. Adjacent channel power ratio (5 MHz) as a  
function of average output power;  
typical values  
Fig 18. Adjacent channel power ratio (10 MHz) as a  
function of average output power;  
typical values  
7.4.5 2-Tone VBW  
aaa-005401  
-10  
IMDD  
(dBc)  
-20  
(1))  
(2))  
IMDD33  
-30  
(1))  
(2))  
IMDD55  
IMDD77  
-40  
-50  
-60  
-70  
(1))  
(2))  
2
1
10  
10  
carrier spacing (MHz)  
VDS = 28 V; IDq = 2400 mA; f = 2140 MHz.  
(1) IMD low  
(2) IMD high  
Fig 19. VBW capability in class-AB test circuit  
BLF8G22LS-270V_8G22LS-270GV#3  
All information provided in this document is subject to legal disclaimers.  
© Ampleon The Netherlands B.V. 2015. All rights reserved.  
Product data sheet  
Rev. 3 — 1 September 2015  
10 of 16  
BLF8G22LS-270(G)V  
Power LDMOS transistor  
8. Package outline  
Earless flanged ceramic package; 6 leads  
SOT1244B  
D
A
F
3
C
B
D
U
1
1
e
c
v
A
4
1
5
y
E
U
2
H
E
1
A
6
2
7
Q
b
b
1
w
2
B
0
5
10 mm  
scale  
Dimensions  
(1)  
(2)  
Q
Unit  
A
b
b
c
D
D
1
e
E
E
F
H
U
1
U
2
v
w
2
y
1
1
max 4.75  
nom  
1.41 12.83 0.18 20.02 19.96  
9.53 9.53 1.14 19.94 1.70 20.70 9.91 0.25 0.25 0.25  
18.03  
0.710  
mm  
min 3.45  
1.14 12.57 0.10 19.61 19.66  
9.27 9.27 0.89 18.92 1.45 20.45 9.65  
0.375 0.375 0.045 0.785 0.067 0.815 0.39 0.01 0.01 0.01  
max 0.187 0.055 0.505 0.007 0.788 0.786  
nom  
min 0.136 0.045 0.495 0.004 0.772 0.774  
inches  
Note  
0.365 0.365 0.035 0.745 0.057 0.805 0.38  
1. Millimeter dimensions are derived from the original inch dimensions.  
2. Dimension is measured 0.030 inch (0.76 mm) from body.  
sot1244b_po  
References  
Outline  
version  
European  
projection  
Issue date  
IEC  
JEDEC  
JEITA  
12-04-18  
12-05-07  
SOT1244B  
Fig 20. Package outline SOT1244B  
BLF8G22LS-270V_8G22LS-270GV#3  
All information provided in this document is subject to legal disclaimers.  
© Ampleon The Netherlands B.V. 2015. All rights reserved.  
Product data sheet  
Rev. 3 — 1 September 2015  
11 of 16  
BLF8G22LS-270(G)V  
Power LDMOS transistor  
Earless flanged ceramic package; 6 leads  
SOT1244C  
0.3 mm gauge plane  
D
L
p
F
A
3
D
1
y
Q
detail X  
v
A
U
1
c
B
X
4
1
5
E
U
2
E
H
1
6
2
7
A
b
b
1
w
2
B
θ
e
0
5
10 mm  
scale  
Dimensions  
(1)  
Unit  
A
b
b
c
D
D
1
e
E
E
F
H
L
Q
U
1
U
2
v
w
2
y
θ
1
1
p
°
max 4.75  
nom  
1.41 12.83 0.18 20.02 19.96  
9.53 9.53 1.14 14.3 1.38 0.195 20.70 9.91 0.25 0.25 0.15  
7
18.03  
mm  
°
°
min 3.45  
1.14 12.57 0.10 19.61 19.66  
9.27 9.27 0.89 14.1 0.98 0.055 20.45 9.65  
0.375 0.375 0.045 0.563 0.055 0.008 0.815 0.39 0.01 0.01 0.006  
0
7
max 0.187 0.055 0.505 0.007 0.788 0.786  
nom  
min 0.136 0.045 0.495 0.004 0.772 0.774  
0.710  
inches  
Note  
°
0.365 0.365 0.035 0.555 0.039 0.002 0.805 0.38  
0
1. Millimeter dimensions are derived from the original inch dimensions.  
sot1244c_po  
References  
Outline  
version  
European  
projection  
Issue date  
IEC  
JEDEC  
JEITA  
12-05-10  
12-05-30  
SOT1244C  
Fig 21. Package outline SOT1244C  
BLF8G22LS-270V_8G22LS-270GV#3  
All information provided in this document is subject to legal disclaimers.  
© Ampleon The Netherlands B.V. 2015. All rights reserved.  
Product data sheet  
Rev. 3 — 1 September 2015  
12 of 16  
BLF8G22LS-270(G)V  
Power LDMOS transistor  
9. Handling information  
CAUTION  
This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling  
electrostatic sensitive devices.  
Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or  
equivalent standards.  
10. Abbreviations  
Table 10. Abbreviations  
Acronym  
3GPP  
CCDF  
CW  
Description  
3rd Generation Partnership Project  
Complementary Cumulative Distribution Function  
Continuous Wave  
DPCH  
ESD  
Dedicated Physical Channel  
ElectroStatic Discharge  
IS-95  
Interim Standard 95  
LDMOS  
PAR  
Laterally Diffused Metal Oxide Semiconductor  
Peak-to-Average Ratio  
SMD  
Surface Mounted Device  
VBW  
Video BandWidth  
VSWR  
W-CDMA  
Voltage Standing Wave Ratio  
Wideband Code Division Multiple Access  
11. Revision history  
Table 11. Revision history  
Document ID  
Release date Data sheet status  
20150901 Product data sheet  
Change notice Supersedes  
BLF8G22LS-270V_8G22LS-270GV#3  
BLF8G22LS-270V_8  
G22LS-270GV v.2  
Modifications:  
• The format of this document has been redesigned to comply with the new  
identity guidelines of Ampleon.  
• Legal texts have been adapted to the new company name where  
appropriate.  
BLF8G22LS-270V_8G22LS-270GV v.2 20121203  
Product data sheet  
Objective data sheet  
-
-
BLF8G22LS-270V_  
8G22LS-270GV v.1  
BLF8G22LS-270V_8G22LS-270GV v.1  
20120613  
-
BLF8G22LS-270V_8G22LS-270GV#3  
All information provided in this document is subject to legal disclaimers.  
© Ampleon The Netherlands B.V. 2015. All rights reserved.  
Product data sheet  
Rev. 3 — 1 September 2015  
13 of 16  
BLF8G22LS-270(G)V  
Power LDMOS transistor  
12. Legal information  
12.1 Data sheet status  
Document status[1][2]  
Product status[3]  
Development  
Definition  
Objective [short] data sheet  
This document contains data from the objective specification for product development.  
This document contains data from the preliminary specification.  
This document contains the product specification.  
Preliminary [short] data sheet Qualification  
Product [short] data sheet Production  
[1]  
[2]  
[3]  
Please consult the most recently issued document before initiating or completing a design.  
The term ‘short data sheet’ is explained in section “Definitions”.  
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status  
information is available on the Internet at URL http://www.ampleon.com.  
Ampleon product can reasonably be expected to result in personal injury,  
12.2 Definitions  
death or severe property or environmental damage. Ampleon and its  
suppliers accept no liability for inclusion and/or use of Ampleon products in  
such equipment or applications and therefore such inclusion and/or use is at  
the customer’s own risk.  
Draft — The document is a draft version only. The content is still under  
internal review and subject to formal approval, which may result in  
modifications or additions. Ampleon does not give any representations or  
warranties as to the accuracy or completeness of information included herein  
and shall have no liability for the consequences of use of such information.  
Applications — Applications that are described herein for any of these  
products are for illustrative purposes only. Ampleon makes no representation  
or warranty that such applications will be suitable for the specified use without  
further testing or modification.  
Short data sheet — A short data sheet is an extract from a full data sheet  
with the same product type number(s) and title. A short data sheet is intended  
for quick reference only and should not be relied upon to contain detailed and  
full information. For detailed and full information see the relevant full data  
sheet, which is available on request via the local Ampleon sales office. In  
case of any inconsistency or conflict with the short data sheet, the full data  
sheet shall prevail.  
Customers are responsible for the design and operation of their applications  
and products using Ampleon products, and Ampleon accepts no liability for  
any assistance with applications or customer product design. It is customer’s  
sole responsibility to determine whether the Ampleon product is suitable and  
fit for the customer’s applications and products planned, as well as for the  
planned application and use of customer’s third party customer(s). Customers  
should provide appropriate design and operating safeguards to minimize the  
risks associated with their applications and products.  
Product specification — The information and data provided in a Product  
data sheet shall define the specification of the product as agreed between  
Ampleon and its customer, unless Ampleon and customer have explicitly  
agreed otherwise in writing. In no event however, shall an agreement be valid  
in which the Ampleon product is deemed to offer functions and qualities  
beyond those described in the Product data sheet.  
Ampleon does not accept any liability related to any default, damage, costs or  
problem which is based on any weakness or default in the customer’s  
applications or products, or the application or use by customer’s third party  
customer(s). Customer is responsible for doing all necessary testing for the  
customer’s applications and products using Ampleon products in order to  
avoid a default of the applications and the products or of the application or  
use by customer’s third party customer(s). Ampleon does not accept any  
liability in this respect.  
12.3 Disclaimers  
Limited warranty and liability — Information in this document is believed to  
be accurate and reliable. However, Ampleon does not give any  
representations or warranties, expressed or implied, as to the accuracy or  
completeness of such information and shall have no liability for the  
consequences of use of such information. Ampleon takes no responsibility for  
the content in this document if provided by an information source outside of  
Ampleon.  
Limiting values — Stress above one or more limiting values (as defined in  
the Absolute Maximum Ratings System of IEC 60134) will cause permanent  
damage to the device. Limiting values are stress ratings only and (proper)  
operation of the device at these or any other conditions above those given in  
the Recommended operating conditions section (if present) or the  
Characteristics sections of this document is not warranted. Constant or  
repeated exposure to limiting values will permanently and irreversibly affect  
the quality and reliability of the device.  
In no event shall Ampleon be liable for any indirect, incidental, punitive,  
special or consequential damages (including - without limitation - lost profits,  
lost savings, business interruption, costs related to the removal or  
replacement of any products or rework charges) whether or not such  
damages are based on tort (including negligence), warranty, breach of  
contract or any other legal theory.  
Terms and conditions of commercial sale — Ampleon products are sold  
subject to the general terms and conditions of commercial sale, as published  
at http://www.ampleon.com/terms, unless otherwise agreed in a valid written  
individual agreement. In case an individual agreement is concluded only the  
terms and conditions of the respective agreement shall apply. Ampleon  
hereby expressly objects to applying the customer’s general terms and  
conditions with regard to the purchase of Ampleon products by customer.  
Notwithstanding any damages that customer might incur for any reason  
whatsoever, Ampleon’ aggregate and cumulative liability towards customer  
for the products described herein shall be limited in accordance with the  
Terms and conditions of commercial sale of Ampleon.  
No offer to sell or license — Nothing in this document may be interpreted or  
construed as an offer to sell products that is open for acceptance or the grant,  
conveyance or implication of any license under any copyrights, patents or  
other industrial or intellectual property rights.  
Right to make changes — Ampleon reserves the right to make changes to  
information published in this document, including without limitation  
specifications and product descriptions, at any time and without notice. This  
document supersedes and replaces all information supplied prior to the  
publication hereof.  
Export control — This document as well as the item(s) described herein  
may be subject to export control regulations. Export might require a prior  
authorization from competent authorities.  
Suitability for use — Ampleon products are not designed, authorized or  
warranted to be suitable for use in life support, life-critical or safety-critical  
systems or equipment, nor in applications where failure or malfunction of an  
BLF8G22LS-270V_8G22LS-270GV#3  
All information provided in this document is subject to legal disclaimers.  
© Ampleon The Netherlands B.V. 2015. All rights reserved.  
Product data sheet  
Rev. 3 — 1 September 2015  
14 of 16  
BLF8G22LS-270(G)V  
Power LDMOS transistor  
Non-automotive qualified products — Unless this data sheet expressly  
states that this specific Ampleon product is automotive qualified, the product  
is not suitable for automotive use. It is neither qualified nor tested in  
accordance with automotive testing or application requirements. Ampleon  
accepts no liability for inclusion and/or use of non-automotive qualified  
products in automotive equipment or applications.  
12.4 Trademarks  
Notice: All referenced brands, product names, service names and trademarks  
are the property of their respective owners.  
Any reference or use of any ‘NXP’ trademark in this document or in or on the  
surface of Ampleon products does not result in any claim, liability or  
entitlement vis-à-vis the owner of this trademark. Ampleon is no longer part of  
the NXP group of companies and any reference to or use of the ‘NXP’  
trademarks will be replaced by reference to or use of Ampleon’s own Any  
reference or use of any ‘NXP’ trademark in this document or in or on the  
surface of Ampleon products does not result in any claim, liability or  
entitlement vis-à-vis the owner of this trademark. Ampleon is no longer part of  
the NXP group of companies and any reference to or use of the ‘NXP’  
trademarks will be replaced by reference to or use of Ampleon’s own  
trademarks.  
In the event that customer uses the product for design-in and use in  
automotive applications to automotive specifications and standards, customer  
(a) shall use the product without Ampleon’ warranty of the product for such  
automotive applications, use and specifications, and (b) whenever customer  
uses the product for automotive applications beyond Ampleon’ specifications  
such use shall be solely at customer’s own risk, and (c) customer fully  
indemnifies Ampleon for any liability, damages or failed product claims  
resulting from customer design and use of the product for automotive  
applications beyond Ampleon’ standard warranty and Ampleon’ product  
specifications.  
Translations — A non-English (translated) version of a document is for  
reference only. The English version shall prevail in case of any discrepancy  
between the translated and English versions.  
13. Contact information  
For more information, please visit:  
http://www.ampleon.com  
For sales office addresses, please visit:  
http://www.ampleon.com/sales  
BLF8G22LS-270V_8G22LS-270GV#3  
All information provided in this document is subject to legal disclaimers.  
© Ampleon The Netherlands B.V. 2015. All rights reserved.  
Product data sheet  
Rev. 3 — 1 September 2015  
15 of 16  
BLF8G22LS-270(G)V  
Power LDMOS transistor  
14. Contents  
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1  
1.1  
1.2  
1.3  
General description . . . . . . . . . . . . . . . . . . . . . 1  
Features and benefits. . . . . . . . . . . . . . . . . . . . 1  
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1  
2
3
4
5
6
Pinning information. . . . . . . . . . . . . . . . . . . . . . 2  
Ordering information. . . . . . . . . . . . . . . . . . . . . 2  
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2  
Thermal characteristics . . . . . . . . . . . . . . . . . . 3  
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 3  
7
7.1  
7.2  
7.3  
Test information. . . . . . . . . . . . . . . . . . . . . . . . . 3  
Ruggedness in class-AB operation . . . . . . . . . 3  
Impedance information . . . . . . . . . . . . . . . . . . . 4  
Test circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5  
Graphs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6  
Pulsed CW . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6  
IS-95. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7  
1-carrier W-CDMA . . . . . . . . . . . . . . . . . . . . . . 8  
2-carrier W-CDMA . . . . . . . . . . . . . . . . . . . . . . 9  
2-Tone VBW . . . . . . . . . . . . . . . . . . . . . . . . . . 10  
7.4  
7.4.1  
7.4.2  
7.4.3  
7.4.4  
7.4.5  
8
Package outline . . . . . . . . . . . . . . . . . . . . . . . . 11  
Handling information. . . . . . . . . . . . . . . . . . . . 13  
Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . 13  
Revision history. . . . . . . . . . . . . . . . . . . . . . . . 13  
9
10  
11  
12  
Legal information. . . . . . . . . . . . . . . . . . . . . . . 14  
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 14  
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 14  
Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 14  
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 15  
12.1  
12.2  
12.3  
12.4  
13  
14  
Contact information. . . . . . . . . . . . . . . . . . . . . 15  
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16  
Please be aware that important notices concerning this document and the product(s)  
described herein, have been included in section ‘Legal information’.  
© Ampleon The Netherlands B.V. 2015.  
All rights reserved.  
For more information, please visit: http://www.ampleon.com  
For sales office addresses, please visit: http://www.ampleon.com/sales  
Date of release: 1 September 2015  
Document identifier: BLF8G22LS-270V_8G22LS-270GV#3  

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