BLF8G22LS-310AVU [ETC]
IC TRANS LDMOS 140W ACC-8L;
| 型号： | BLF8G22LS-310AVU |
| 厂家： | 
ETC |
| 描述： | IC TRANS LDMOS 140W ACC-8L |
| 文件： | 总16页 (文件大小：1518K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BLC8G20LS-310AV
Power LDMOS transistor
Rev. 5 — 24 November 2017
Product data sheet
1. Product profile
1.1 General description
310 W LDMOS packaged asymmetric Doherty power transistor for base station
applications at frequencies from 1900 MHz to 2000 MHz.
Table 1.
Typical RF performance at Tcase = 25 C in an asymmetrical Doherty production test circuit.
DS = 28 V; IDq = 650 mA (main); VGS(amp)peak = 0.5 V, unless otherwise specified.
Typical performance
V
Test signal
f
VDS
(V)
28
PL(AV)
(dBm)
47.5
Gp
D
ACPR
(dBc)
33 [1]
(MHz)
(dB)
17
(%)
42.5
1-carrier W-CDMA
1930 to 1995
[1] Test signal: 1-carrier W-CDMA; 3GPP test model 1; 64 DPCH; PAR = 9.65 dB at 0.01% probability on
CCDF per carrier.
1.2 Features and benefits
Excellent ruggedness
High efficiency
Low thermal resistance providing excellent thermal stability
Lower output capacitance for improved performance in Doherty applications
Designed for low memory effects providing excellent digital pre-distortion capability
Internally matched for ease of use
Integrated ESD protection
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
RF power amplifiers for base stations and multi carrier applications in the 1900 MHz to
2000 MHz frequency range
BLC8G20LS-310AV
Power LDMOS transistor
2. Pinning information
Table 2.
Pinning
Pin
1
Description
Simplified outline
Graphic symbol
drain2 (peak)
2, 7
7
2
1
6
2
drain1 (main)
5
3
gate1 (main)
3
4
gate2 (peak)
5
3
4
4
[1]
5
source
6
video decoupling (peak)
video decoupling (main)
1, 6
7
aaa-014884
[1] Connected to flange.
3. Ordering information
Table 3.
Ordering information
Type number
Package
Name Description
Version
BLC8G20LS-310AV
-
air cavity plastic earless flanged package;
6 leads
SOT1258-1
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VDS
Parameter
Conditions
Min
-
Max
65
Unit
V
drain-source voltage
main amplifier gate-source voltage
VGS(amp)main
0.5
0.5
65
-
+13
+13
V
VGS(amp)peak peak amplifier gate-source voltage
V
Tstg
Tj
storage temperature
junction temperature
+150 C
[1]
225
C
[1] Continuous use at maximum temperature will affect the reliability, for details refer to the online MTF
calculator.
5. Thermal characteristics
Table 5.
Symbol Parameter
Rth(j-c) thermal resistance from
junction to case
Thermal characteristics
Conditions
Typ Unit
VDS = 28 V; IDq = 650 mA (main);
VGS(amp)peak = 0.5 V; Tcase = 80 C
PL = 56 W (CW)
PL = 89 W (CW)
0.30 K/W
0.30 K/W
BLC8G20LS-310AV
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© Ampleon Netherlands B.V. 2017. All rights reserved.
Product data sheet
Rev. 5 — 24 November 2017
2 of 16
BLC8G20LS-310AV
Power LDMOS transistor
6. Characteristics
Table 6.
DC characteristics
Tj = 25 C unless otherwise specified.
Symbol Parameter
Conditions
Min
Typ
Max
Unit
Main device
V(BR)DSS drain-source breakdown voltage
VGS = 0 V; ID = 1.44 mA
VDS = 10 V; ID = 144 mA
VDS = 28 V; ID = 650 mA
VGS = 0 V; VDS = 28 V
65
-
-
V
VGS(th)
VGSq
IDSS
gate-source threshold voltage
gate-source quiescent voltage
drain leakage current
1.5
1.9
2.1
-
2.3
2.5
2.8
-
V
1.7
V
-
-
-
-
-
A
A
IDSX
drain cut-off current
VGS = VGS(th) + 3.75 V; VDS = 10 V
VGS = 11 V; VDS = 0 V
28
-
IGSS
gate leakage current
280
-
nA
S
gfs
forward transconductance
drain-source on-state resistance
VDS = 10 V; ID = 5.04 A
10
100
RDS(on)
VGS = VGS(th) + 3.75 V; ID = 5.04 A
166
m
Peak device
V(BR)DSS drain-source breakdown voltage
VGS = 0 V; ID = 2.2 mA
65
-
-
V
VGS(th)
VGSq
IDSS
gate-source threshold voltage
gate-source quiescent voltage
drain leakage current
VDS = 10 V; ID = 220 mA
VDS = 28 V; ID = 1100 mA
VGS = 0 V; VDS = 28 V
1.5
1.9
2.1
-
2.3
2.5
2.8
-
V
1.7
V
-
-
-
-
-
A
A
IDSX
drain cut-off current
VGS = VGS(th) + 3.75 V; VDS = 10 V
VGS = 11 V; VDS = 0 V
39
-
IGSS
gate leakage current
280
-
nA
S
gfs
forward transconductance
drain-source on-state resistance
VDS = 10 V; ID = 7.70 A
15
70
RDS(on)
VGS = VGS(th) + 3.75 V; ID = 7.7 A
112
m
Table 7.
RF characteristics
Test signal: 1-carrier W-CDMA; PAR = 9.65 dB at 0.01 % probability on the CCDF; 3GPP test model 1; 1 - 64 DPCH;
f1 = 1932.5 MHz; f2 = 1992.5 MHz; RF performance at VDS = 28 V; IDq = 650 mA (main); VGS(amp)peak = 0.5 V; Tcase = 25 C;
unless otherwise specified; in an asymmetrical Doherty production test circuit in 1930 MHz to 1995 MHz.
Symbol
Gp
Parameter
Conditions
Min
15.8
-
Typ
16.9
10
42.5
33
Max
-
Unit
dB
power gain
PL(AV) = 56 W
PL(AV) = 56 W
PL(AV) = 56 W
PL(AV) = 56 W
RLin
input return loss
drain efficiency
adjacent channel power ratio
6
-
dB
D
38
-
%
ACPR
28
dBc
Table 8.
RF characteristics
Test signal: 1-carrier W-CDMA; PAR = 9.65 dB at 0.01 % probability on the CCDF; 3GPP test model 1; 1 - 64 DPCH;
RF performance at VDS = 28 V; IDq = 650 mA (main); VGS(amp)peak = 0.5 V; Tcase = 25 C; unless otherwise specified; in an
asymmetrical Doherty production test circuit at 1992.5 MHz.
Symbol
PARO
PL(M)
Parameter
Conditions
PL(AV) = 56 W
PL(AV) = 56 W
Min
7.0
Typ
7.25
300
Max
Unit
dB
output peak-to-average ratio
peak output power
-
-
281
W
BLC8G20LS-310AV
All information provided in this document is subject to legal disclaimers.
© Ampleon Netherlands B.V. 2017. All rights reserved.
Product data sheet
Rev. 5 — 24 November 2017
3 of 16
BLC8G20LS-310AV
Power LDMOS transistor
7. Test information
7.1 Ruggedness in Doherty operation
The BLC8G20LS-310AV is capable of withstanding a load mismatch corresponding to
VSWR = 10 : 1 through all phases under the following conditions: VDS = 28 V;
IDq = 650 mA (main); VGS(amp)peak = 0.5 V; f = 1930 MHz. Test signal: 1-carrier WCDMA;
PL = 90 W (PL(M) = 5 dB); 100 % clipping at 0.01% probability on CCDF.
7.2 Impedance information
Table 9.
Typical impedance of main device
Measured load-pull data of main device; IDq = 700 mA (main); VDS = 28 V; pulsed CW (tp = 100 s;
= 10 %).
[1]
[1]
[2]
[2]
[2]
f
ZS
()
ZL
PL
D
Gp
(MHz)
()
(W)
(%)
(dB)
Maximum power load
1930
1962
1995
1.3 j3.5
1.4 j3.9
2.1 j3.9
1.1 j4.1
1.1 j4.1
1.3 j4.4
169.8
166.3
163.9
55.6
56.0
57.9
16.9
17.3
17.9
Maximum drain efficiency load
1930
1962
1995
1.3 j3.5
1.4 j3.9
2.1 j3.9
1.7 j2.9
1.8 j3.3
1.8 j3.9
116.0
121.2
136.0
66.4
65.6
64.0
19.6
19.7
19.4
[1] ZS and ZL defined in Figure 1.
[2] at 3 dB gain compression.
Table 10. Typical impedance of peak device
Measured load-pull data of peak device; IDq = 1200 mA (peak); VDS = 28 V; pulsed CW (tp = 100 s;
= 10 %).
[1]
[1]
[2]
[2]
[2]
f
ZS
()
ZL
PL
D
Gp
(MHz)
()
(W)
(%)
(dB)
Maximum power load
1930
1962
1995
1.1 j3.9
1.4 j4.1
1.8 j4.5
1.4 j4.7
1.4 j4.8
1.4 j5.2
239.9
234.3
229.3
53.9
53.6
50.2
16.5
16.9
16.6
Maximum drain efficiency load
1930
1962
1995
1.1 j3.9
1.4 j4.1
1.8 j4.5
1.7 j2.9
1.7 j2.8
1.7 j3.3
149.8
122.0
147.6
64.3
61.3
62.9
19.6
20.3
19.9
[1] ZS and ZL defined in Figure 1.
[2] at 3 dB gain compression.
BLC8G20LS-310AV
All information provided in this document is subject to legal disclaimers.
© Ampleon Netherlands B.V. 2017. All rights reserved.
Product data sheet
Rev. 5 — 24 November 2017
4 of 16
BLC8G20LS-310AV
Power LDMOS transistor
drain
Z
L
gate
Z
S
001aaf059
Fig 1. Definition of transistor impedance
7.3 Recommended impedances for Doherty design
Table 11. Typical impedance of main device at 1 : 1 load
Measured load-pull data of main device; IDq = 700 mA (main); VDS = 28 V; pulsed CW (tp = 100 s;
= 10 %).
[1]
[1]
[2]
[3]
[3]
f
ZS
()
ZL
PL
D
Gp
(MHz)
()
(dBm)
(%)
(dB)
Maximum power load
1930
1962
1995
0.9 j3.3
0.9 j3.6
1.3 j3.7
1.3 j4.8
1.3 j4.6
1.3 j4.5
151.7
152.8
162.5
33.9
35.2
36.2
19.8
20.2
20.6
[1] ZS and ZL defined in Figure 1.
[2] at 3 dB gain compression.
[3] at PL(AV) = 56 W.
Table 12. Typical impedance of main device at 1 : 2.5 load
Measured load-pull data of main device; IDq = 700 mA (main); VDS = 28 V; pulsed CW (tp = 100 s;
= 10 %).
[1]
[1]
[2]
[3]
[3]
f
ZS
()
ZL
PL
D
Gp
(MHz)
()
(dBm)
(%)
(dB)
Maximum power load
1930
1962
1995
1.3 j3.4
1.4 j3.8
1.9 j3.9
2.4 j3.5
2.6 j3.5
2.8 j3.6
111.2
105.7
100.2
49.2
50.4
50.2
22.5
22.9
23.0
[1] ZS and ZL defined in Figure 1.
[2] at 3 dB gain compression.
[3] at PL(AV) = 56 W.
BLC8G20LS-310AV
All information provided in this document is subject to legal disclaimers.
© Ampleon Netherlands B.V. 2017. All rights reserved.
Product data sheet
Rev. 5 — 24 November 2017
5 of 16
BLC8G20LS-310AV
Power LDMOS transistor
Table 13. Typical impedance of peak device at 1 : 1 load
Measured load-pull data of peak device; IDq = 1200 mA (peak); VDS = 28 V; pulsed CW (tp = 100 s;
= 10 %).
[1]
[1]
[2]
[2]
[2]
f
ZS
()
ZL
PL
D
Gp
(MHz)
()
(dBm)
(%)
(dB)
Maximum power load
1930
1962
1995
1.1 j4.9
1.4 j4.1
1.8 j4.4
1.7 j4.9
1.6 j4.7
1.6 j4.5
231.2
217.8
215.3
51.9
53.0
57.1
16.6
17.3
17.9
[1] ZS and ZL defined in Figure 1.
[2] at 3 dB gain compression.
Table 14. Off-state impedances of peak device
f
Zoff
(MHz)
1930
1962
1995
()
0.6 + j1.9
0.6 + j2.2
0.6 + j2.5
7.4 Test circuit
110 mm
R4
C21
C10
C5
C12
C11
C3
R2
C9
C1
C13
C17
C14
C15
C16
80 mm
X1
C2
R1
C19
C4
C6
C20
C22
R5 R3
aaa-018274
Printed-Circuit Board (PCB): Rogers RO4350B; thickness = 0.508 mm;
thickness copper plating = 35 m. See Table 15 for a list of components.
Fig 2. Component layout for test circuit
BLC8G20LS-310AV
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© Ampleon Netherlands B.V. 2017. All rights reserved.
Product data sheet
Rev. 5 — 24 November 2017
6 of 16
BLC8G20LS-310AV
Power LDMOS transistor
Table 15. List of components
See Figure 2 for component layout.
Component
Description
Value
Remarks
C1, C2, C3, C4, C9, C11, multilayer ceramic chip capacitor 18 pF
C14, C16, C17, C19
Murata 0805
C5, C6, C10, C12, C13, multilayer ceramic chip capacitor 10 F
C15, C20
C21, C22
C6
electrolytic capacitor
470 F, 63 V
multilayer ceramic chip capacitor 2.4 pF
R1
SMD resistor
wire resistor
wire resistor
wire resistor
50 , 12 W
Anaren 2010
Vishay Dale 0805
SMD 0805
R2, R3
R4
5.1
1.2 k
3.9 k
R5
SMD 0805
7.5 Graphical data
7.5.1 Pulsed CW
aaa-014432
aaa-014433
60
50
40
30
20
10
0
19
18
17
16
15
14
13
η
G
p
(dB)
D
(%)
(3)
(2)
(1)
(1))
(2))
(3))
0
50
100
150
200
250
300
(W)
350
0
50
100
150
200
250
300
(W)
350
P
P
L
L
VDS = 28 V; IDq = 650 mA (main); VGS(amp)peak = 0.5 V;
VDS = 28 V; IDq = 650 mA (main); VGS(amp)peak = 0.5 V;
tp = 100 s; = 10 %.
tp = 100 s; = 10 %.
(1) f = 1930 MHz
(2) f = 1962.5 MHz
(3) f = 1995 MHz
(1) f = 1930 MHz
(2) f = 1962.5 MHz
(3) f = 1995 MHz
Fig 3. Drain efficiency as a function of output power;
typical values
Fig 4. Power gain as a function of output power;
typical values
BLC8G20LS-310AV
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© Ampleon Netherlands B.V. 2017. All rights reserved.
Product data sheet
Rev. 5 — 24 November 2017
7 of 16
BLC8G20LS-310AV
Power LDMOS transistor
7.5.2 1-Carrier W-CDMA
PAR = 9.7 dB at 0.01 % probability on the CCDF; 3GPP test model 1 with 64 DPCH
(100 % clipping).
aaa-017497
aaa-017490
18
17
16
15
14
13
50
40
30
20
10
0
-25
5M
G
ηη
ACPR
(dBc)
p
D
(dB)
(%)
G
p
-30
(1)
(2)
(3)
-35
-40
-45
-50
(1))
(2))
(3))
η
D
0
20
40
60
80
(W)
100
0
20
40
60
80
P (W)
L
100
P
L
VDS = 28 V; IDq = 650 mA (main); VGS(amp)peak = 0.5 V.
VDS = 28 V; IDq = 650 mA (main); VGS(amp)peak = 0.5 V.
(1) f = 1930 MHz
(2) f = 1962.5 MHz
(3) f = 1995 MHz
(1) f = 1930 MHz
(2) f = 1962.5 MHz
(3) f = 1995 MHz
Fig 5. Power gain and drain efficiency as function of
output power; typical values
Fig 6. Adjacent channel power ratio (5 MHz) as a
function of output power; typical values
aaa-017499
aaa-017500
11
23
PARR
(dB)
RL
in
(dB)
10
9
(3))
19
15
11
7
(2))
(1))
8
(3)
(2)
7
(1)
6
5
0
20
40
60
80
(W)
100
0
20
40
60
80
P (W)
L
100
P
L
VDS = 28 V; IDq = 650 mA (main); VGS(amp)peak = 0.5 V.
(1) f = 1930 MHz
VDS = 28 V; IDq = 650 mA (main); VGS(amp)peak = 0.5 V.
(1) f = 1930 MHz
(2) f = 1962.5 MHz
(3) f = 1995 MHz
(2) f = 1962.5 MHz
(3) f = 1995 MHz
Fig 7. Peak-to-average ratio as a function of output
power; typical values
Fig 8. Input return loss as a function of output
power; typical values
BLC8G20LS-310AV
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© Ampleon Netherlands B.V. 2017. All rights reserved.
Product data sheet
Rev. 5 — 24 November 2017
8 of 16
BLC8G20LS-310AV
Power LDMOS transistor
7.5.3 2-Carrier W-CDMA
PAR = 8.4 dB at 0.01 % probability on the CCDF; 3GPP test model 1 with 64 DPCH
(46 % clipping).
aaa-017501
aaa-017502
18
17
16
15
14
13
50
40
30
20
10
0
-15
5M
-15
G
ηη
ACPR
(dBc)
ACPR
10M
p
D
(dB)
(%)
(dBc)
G
p
-25
-25
-35
-45
-55
-65
(1)
(2)
(3)
-35
-45
-55
-65
(1))
(2))
(3))
η
D
0
20
40
60
80
(W)
100
0
20
40
60
80
P (W)
L
100
P
L
VDS = 28 V; IDq = 650 mA (main); VGS(amp)peak = 0.5 V.
VDS = 28 V; IDq = 650 mA (main); VGS(amp)peak = 0.5 V.
(1) f = 1930 MHz
(2) f = 1962.5 MHz
(3) f = 1995 MHz
(1) f = 1930 MHz
(2) f = 1962.5 MHz
(3) f = 1995 MHz
Fig 9. Power gain and drain efficiency as function of
output power; typical values
Fig 10. Adjacent channel power ratio (5 MHz) and
adjacent channel power ratio (10 MHz) as
function of output power; typical values
aaa-017503
23
RL
in
(dB)
19
15
11
7
(3))
(2))
(1))
0
20
40
60
80
(W)
100
P
L
VDS = 28 V; IDq = 650 mA (main); VGS(amp)peak = 0.5 V.
(1) f = 1930 MHz
(2) f = 1962.5 MHz
(3) f = 1995 MHz
Fig 11. Input return loss as a function of output power; typical values
BLC8G20LS-310AV
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© Ampleon Netherlands B.V. 2017. All rights reserved.
Product data sheet
Rev. 5 — 24 November 2017
9 of 16
BLC8G20LS-310AV
Power LDMOS transistor
7.5.4 CW
aaa-018280
aaa-017504
4
AM to PM
(deg)
8
6
t
d(ggrrpp))
(ns)
0
(1))
(2))
(3)
-4
4
(2)
(1)
-8
2
-12
-16
-20
0
-2
30
34
38
42
46
50
54
58
1700
1820
1940
2060
2180
2300
P
(W)
f (MHz)
L
VDS = 28 V; IDq = 650 mA (main); VGS(amp)peak = 0.5 V.
(1) f = 1930 MHz
VDS = 28 V; IDq = 650 mA (main); VGS(amp)peak = 0.5 V.
(1) Pi = 7 dBm
(2) f = 1962.5 MHz
(3) f = 1995 MHz
(2) Pi = +30.5 dBm
Fig 12. AM to PM as a function of output power;
typical values
Fig 13. Group delay time as a function of frequency;
typical values
7.5.5 2-Tone VBW
aaa-018281
-10
IMDD
(dBc)
-20
(1))
(2))
IMDD33
-30
IMDD55
-40
(1))
(2))
IMDD77
-50
(1))
(2))
-60
-70
1
2
3
10
10
10
carrier spacing (MHz)
VDS = 28 V; IDq = 450 mA (main); VGS(amp)peak = 0.5 V; f = 1960 MHz.
(1) IMD low
(2) IMD high
Fig 14. VBW capability in Doherty development board
BLC8G20LS-310AV
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© Ampleon Netherlands B.V. 2017. All rights reserved.
Product data sheet
Rev. 5 — 24 November 2017
10 of 16
BLC8G20LS-310AV
Power LDMOS transistor
8. Package outline
Air cavity plastic earless flanged package; 6 leads
SOT1258-1
D
A
F
5
w
D
B
1
1
v
A
L
b
c
7
2
1
6
y
Į
H
1
Z
1
Z
H
U
E
E
2
1
A
3
4
e
Q
w
b
B
2
1
U
B
1
y
Į
Z
Z
1
0.1 65° 3.17 5.79
61° 2.67 5.29
0
10 mm
scale
Dimensions
Unit
(1)
A
b
b
1
c
D
D
E
E
1
e
L
F
H
H
Q
U
U
v
w
w
2
1
1
1
2
1
max 4.65 1.12 11.78 0.2 31.44 31.34 9.60 9.50
mm nom
min 4.18 0.91 11.58 0.1 31.04 31.14 9.20 9.30
36.42 1.83 16.71 8.12 2.33 32.33 10.23 0.5
0.5
0.5
13.72
36.22 1.63 16.51 7.62 2.13 32.13 10.03
Note
1. Dimension Q is measured 0.1 mm away from the flange.
2. Ringframe and/or ringframe glue shall not overhang at the side of the flange.
sot1258-1_po
References
Outline
version
European
projection
Issue date
IEC
JEDEC
JEITA
14-02-24
17-08-31
SOT1258-1
Fig 15. Package outline SOT1258-1
BLC8G20LS-310AV
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© Ampleon Netherlands B.V. 2017. All rights reserved.
Product data sheet
Rev. 5 — 24 November 2017
11 of 16
BLC8G20LS-310AV
Power LDMOS transistor
9. Handling information
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling
electrostatic sensitive devices.
Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or
equivalent standards.
Table 16. ESD sensitivity
ESD model
Class
C2A [1]
2 [2]
Charged Device Model (CDM); According to ANSI/ESDA/JEDEC standard JS-002
Human Body Model (HBM); According to ANSI/ESDA/JEDEC standard JS-001
[1] CDM classification C2A is granted to any part that passes after exposure to an ESD pulse of 500 V, but fails
after exposure to an ESD pulse of 750 V.
[2] HBM classification 2 is granted to any part that passes after exposure to an ESD pulse of 2000 V, but fails
after exposure to an ESD pulse of 4000 V.
10. Abbreviations
Table 17. Abbreviations
Acronym
3GPP
AM
Description
3rd Generation Partnership Project
Amplitude Modulation
CCDF
CW
Complementary Cumulative Distribution Function
Continuous Wave
DPCH
ESD
Dedicated Physical CHannel
ElectroStatic Discharge
LDMOS
MTF
Laterally Diffused Metal-Oxide Semiconductor
Median Time to Failure
PAR
Peak-to-Average Ratio
PM
Phase Modulation
SMD
Surface Mounted Device
VBW
Video BandWidth
VSWR
W-CDMA
Voltage Standing Wave Ratio
Wideband Code Division Multiple Access
BLC8G20LS-310AV
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Product data sheet
Rev. 5 — 24 November 2017
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Power LDMOS transistor
11. Revision history
Table 18. Revision history
Document ID
Release date
20171124
Data sheet status
Change notice
Supersedes
BLC8G20LS-310AV v.5
Modifications:
Product data sheet
-
BLC8G20LS-310AV v.4
• Table 2 on page 2: changed simplified version drawing SOT1258-3 to SOT1258-1
• Table 3 on page 2: changed version SOT1258-3 to SOT1258-1
• Figure 15 on page 11: changed package outline drawing SOT1258-3 to SOT1258-1
BLC8G20LS-310AV v.4
BLC8G20LS-310AV v.3
BLC8G20LS-310AV v.2
BLC8G20LS-310AV v.1
20161202
20150901
20150506
20150506
Product data sheet
Product data sheet
Product data sheet
Product data sheet
-
-
-
-
BLC8G20LS-310AV v.3
BLC8G20LS-310AV v.2
BLC8G20LS-310AV v.1
-
BLC8G20LS-310AV
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Product data sheet
Rev. 5 — 24 November 2017
13 of 16
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Power LDMOS transistor
12. Legal information
12.1 Data sheet status
Document status[1][2]
Product status[3]
Development
Definition
Objective [short] data sheet
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Preliminary [short] data sheet Qualification
Product [short] data sheet Production
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term ‘short data sheet’ is explained in section “Definitions”.
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.ampleon.com.
Ampleon product can reasonably be expected to result in personal injury,
12.2 Definitions
death or severe property or environmental damage. Ampleon and its
suppliers accept no liability for inclusion and/or use of Ampleon products in
such equipment or applications and therefore such inclusion and/or use is at
the customer’s own risk.
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. Ampleon does not give any representations or
warranties as to the accuracy or completeness of information included herein
and shall have no liability for the consequences of use of such information.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. Ampleon makes no representation
or warranty that such applications will be suitable for the specified use without
further testing or modification.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local Ampleon sales office. In
case of any inconsistency or conflict with the short data sheet, the full data
sheet shall prevail.
Customers are responsible for the design and operation of their applications
and products using Ampleon products, and Ampleon accepts no liability for
any assistance with applications or customer product design. It is customer’s
sole responsibility to determine whether the Ampleon product is suitable and
fit for the customer’s applications and products planned, as well as for the
planned application and use of customer’s third party customer(s). Customers
should provide appropriate design and operating safeguards to minimize the
risks associated with their applications and products.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
Ampleon and its customer, unless Ampleon and customer have explicitly
agreed otherwise in writing. In no event however, shall an agreement be valid
in which the Ampleon product is deemed to offer functions and qualities
beyond those described in the Product data sheet.
Ampleon does not accept any liability related to any default, damage, costs or
problem which is based on any weakness or default in the customer’s
applications or products, or the application or use by customer’s third party
customer(s). Customer is responsible for doing all necessary testing for the
customer’s applications and products using Ampleon products in order to
avoid a default of the applications and the products or of the application or
use by customer’s third party customer(s). Ampleon does not accept any
liability in this respect.
12.3 Disclaimers
Limited warranty and liability — Information in this document is believed to
be accurate and reliable. However, Ampleon does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information. Ampleon takes no responsibility for
the content in this document if provided by an information source outside of
Ampleon.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
In no event shall Ampleon be liable for any indirect, incidental, punitive,
special or consequential damages (including - without limitation - lost profits,
lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Terms and conditions of commercial sale — Ampleon products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.ampleon.com/terms, unless otherwise agreed in a valid written
individual agreement. In case an individual agreement is concluded only the
terms and conditions of the respective agreement shall apply. Ampleon
hereby expressly objects to applying the customer’s general terms and
conditions with regard to the purchase of Ampleon products by customer.
Notwithstanding any damages that customer might incur for any reason
whatsoever, Ampleon’s aggregate and cumulative liability towards customer
for the products described herein shall be limited in accordance with the
Terms and conditions of commercial sale of Ampleon.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Right to make changes — Ampleon reserves the right to make changes to
information published in this document, including without limitation
specifications and product descriptions, at any time and without notice. This
document supersedes and replaces all information supplied prior to the
publication hereof.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from competent authorities.
Suitability for use — Ampleon products are not designed, authorized or
warranted to be suitable for use in life support, life-critical or safety-critical
systems or equipment, nor in applications where failure or malfunction of an
BLC8G20LS-310AV
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© Ampleon Netherlands B.V. 2017. All rights reserved.
Product data sheet
Rev. 5 — 24 November 2017
14 of 16
BLC8G20LS-310AV
Power LDMOS transistor
Non-automotive qualified products — Unless this data sheet expressly
states that this specific Ampleon product is automotive qualified, the product
is not suitable for automotive use. It is neither qualified nor tested in
accordance with automotive testing or application requirements. Ampleon
accepts no liability for inclusion and/or use of non-automotive qualified
products in automotive equipment or applications.
Translations — A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
12.4 Trademarks
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards, customer
(a) shall use the product without Ampleon’s warranty of the product for such
automotive applications, use and specifications, and (b) whenever customer
uses the product for automotive applications beyond Ampleon’s specifications
such use shall be solely at customer’s own risk, and (c) customer fully
indemnifies Ampleon for any liability, damages or failed product claims
resulting from customer design and use of the product for automotive
applications beyond Ampleon’s standard warranty and Ampleon’s product
specifications.
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
Any reference or use of any ‘NXP’ trademark in this document or in or on the
surface of Ampleon products does not result in any claim, liability or
entitlement vis-à-vis the owner of this trademark. Ampleon is no longer part of
the NXP group of companies and any reference to or use of the ‘NXP’
trademarks will be replaced by reference to or use of Ampleon’s own
trademarks.
13. Contact information
For more information, please visit: http://www.ampleon.com
For sales office addresses, please visit: http://www.ampleon.com/sales
BLC8G20LS-310AV
All information provided in this document is subject to legal disclaimers.
© Ampleon Netherlands B.V. 2017. All rights reserved.
Product data sheet
Rev. 5 — 24 November 2017
15 of 16
BLC8G20LS-310AV
Power LDMOS transistor
14. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1
1.2
1.3
General description . . . . . . . . . . . . . . . . . . . . . 1
Features and benefits. . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
2
3
4
5
6
Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
Ordering information. . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics . . . . . . . . . . . . . . . . . . 2
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 3
7
7.1
7.2
7.3
7.4
7.5
7.5.1
7.5.2
7.5.3
7.5.4
7.5.5
Test information. . . . . . . . . . . . . . . . . . . . . . . . . 4
Ruggedness in Doherty operation . . . . . . . . . . 4
Impedance information . . . . . . . . . . . . . . . . . . . 4
Recommended impedances for Doherty design 5
Test circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Graphical data . . . . . . . . . . . . . . . . . . . . . . . . . 7
Pulsed CW . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
1-Carrier W-CDMA . . . . . . . . . . . . . . . . . . . . . . 8
2-Carrier W-CDMA . . . . . . . . . . . . . . . . . . . . . . 9
CW . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
2-Tone VBW . . . . . . . . . . . . . . . . . . . . . . . . . . 10
8
Package outline . . . . . . . . . . . . . . . . . . . . . . . . 11
Handling information. . . . . . . . . . . . . . . . . . . . 12
Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . 12
Revision history. . . . . . . . . . . . . . . . . . . . . . . . 13
9
10
11
12
Legal information. . . . . . . . . . . . . . . . . . . . . . . 14
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 14
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 15
12.1
12.2
12.3
12.4
13
14
Contact information. . . . . . . . . . . . . . . . . . . . . 15
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© Ampleon Netherlands B.V. 2017.
All rights reserved.
For more information, please visit: http://www.ampleon.com
For sales office addresses, please visit: http://www.ampleon.com/sales
Date of release: 24 November 2017
Document identifier: BLC8G20LS-310AV
相关型号：
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