BLL6H1214LS-250,11 [ETC]
RF FET LDMOS 100V 17DB SOT502B;
| 型号： | BLL6H1214LS-250,11 |
| 厂家： | 
ETC |
| 描述： | RF FET LDMOS 100V 17DB SOT502B 放大器 CD 晶体管 |
| 文件： | 总13页 (文件大小：1032K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BLL6H1214L-250;
BLL6H1214LS-250
LDMOS L-band radar power transistor
Rev. 4 — 1 September 2015
Product data sheet
1. Product profile
1.1 General description
250 W LDMOS power transistor intended for L-band radar applications in the 1.2 GHz to
1.4 GHz range.
Table 1.
Test information
Typical RF performance at Tcase = 25 C; tp = 300 s; = 10 %; IDq = 100 mA; in a class-AB
production test circuit.
Mode of operation
f
VDS
(V)
PL
Gp
(dB) (%)
17 55
D
tr
tf
(GHz)
(W)
250
(ns)
15
(ns)
5
pulsed RF
1.2 to 1.4 50
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features and benefits
Typical pulsed RF performance at a frequency of 1.2 GHz to 1.4 GHz, a supply voltage
of 50 V, an IDq of 100 mA, a tp of 300 s with of 10 %:
Output power = 250 W
Power gain = 17 dB
Efficiency = 55 %
Easy power control
Integrated ESD protection
High flexibility with respect to pulse formats
Excellent ruggedness
High efficiency
Excellent thermal stability
Designed for broadband operation (1.2 GHz to 1.4 GHz)
Internally matched for ease of use
Compliant to Restriction of Hazardous Substances (RoHS) Directive 2002/95/EC
BLL6H1214L(S)-250
LDMOS L-band radar power transistor
1.3 Applications
L-band power amplifiers for radar applications in the 1.2 GHz to 1.4 GHz frequency
range
2. Pinning information
Table 2.
Pin
BLL6H1214L-250 (SOT502A)
Pinning
Description
Simplified outline
Graphic symbol
1
2
3
drain
gate
1
1
3
2
[1]
source
2
3
sym112
BLL6H1214LS-250 (SOT502B)
1
2
3
drain
gate
1
1
3
2
[1]
source
2
3
sym112
[1] Connected to flange.
3. Ordering information
Table 3.
Ordering information
Type number
Package
Name Description
Version
BLL6H1214L-250
BLL6H1214LS-250
-
flanged LDMOST ceramic package; 2 mounting
holes; 2 leads
SOT502A
-
earless flanged LDMOST ceramic package; 2 leads
SOT502B
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VDS
VGS
ID
Parameter
Conditions
Min
Max
100
Unit
V
drain-source voltage
gate-source voltage
drain current
-
0.5 +13
V
-
42
A
Tstg
Tj
storage temperature
junction temperature
65
+150 C
200 C
-
BLL6H1214L-250_1214LS-250#4
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Product data sheet
Rev. 4 — 1 September 2015
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BLL6H1214L(S)-250
LDMOS L-band radar power transistor
5. Thermal characteristics
Table 5.
Thermal characteristics
Symbol Parameter
Conditions
Typ
Unit
Zth(j-c)
transient thermal impedance from
junction to case
Tcase = 85 C; PL = 250 W
tp = 100 s; = 10 %
tp = 200 s; = 10 %
tp = 300 s; = 10 %
tp = 100 s; = 20 %
tp = 500 s; = 20 %
0.10 K/W
0.13 K/W
0.15 K/W
0.14 K/W
0.20 K/W
6. Characteristics
Table 6.
DC characteristics
Tj = 25 C.
Symbol Parameter
Conditions
Min
Typ
-
Max Unit
V(BR)DSS drain-source breakdown voltage VGS = 0 V; ID = 2.7 mA
100
-
V
VGS(th)
IDSS
gate-source threshold voltage
drain leakage current
VDS = 10 V; ID = 270 mA 1.3
1.8
-
2.25 V
VGS = 0 V; VDS = 50 V
-
1.4 A
IDSX
drain cut-off current
VGS = VGS(th) + 3.75 V;
VDS = 10 V
32
42
-
A
IGSS
gfs
gate leakage current
VGS = 11 V; VDS = 0 V
-
-
140 nA
forward transconductance
VDS = 10 V; ID = 270 mA 1.6
2.3
100
-
S
RDS(on) drain-source on-state resistance VGS = VGS(th) + 3.75 V;
ID = 9.5 A
-
169 m
Table 7.
RF characteristics
Mode of operation: pulsed RF; tp = 300 s; = 10 %; RF performance at VDS = 50 V; IDq = 100 mA;
Tcase = 25 C; unless otherwise specified, in a class-AB production test circuit.
Symbol
PL
Parameter
Conditions
Min Typ Max Unit
output power
250
-
-
W
V
VDS
Gp
drain-source voltage
power gain
PL = 250 W
PL = 250 W
PL = 250 W
PL = 250 W
PL = 250 W
-
-
50
-
15
-
17
dB
tp
pulse duration
300 500 s
duty cycle
-
10
10
300
55
0
20
%
RLin
PL(1dB)
D
input return loss
output power at 1 dB gain compression
drain efficiency
-
-
dB
W
-
-
PL = 250 W
PL = 250 W
PL = 250 W
PL = 250 W
49
-
-
%
Pdroop(pulse) pulse droop power
0.3
dB
ns
ns
tr
tf
rise time
fall time
-
15
5
-
-
-
BLL6H1214L-250_1214LS-250#4
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© Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet
Rev. 4 — 1 September 2015
3 of 13
BLL6H1214L(S)-250
LDMOS L-band radar power transistor
6.1 Ruggedness in class-AB operation
The BLL6H1214L-250 and BLL6H1214LS-250 are capable of withstanding a load
mismatch corresponding to VSWR = 10 : 1 through all phases under the following
conditions: VDS = 50 V; IDq = 100 mA; PL = 250 W; tp = 300 s; = 10 %.
7. Application information
7.1 Impedance information
Table 8.
Typical impedance
Typical values unless otherwise specified.
f
ZS
ZL
GHz
1.2
1.3
1.4
1.268 j2.623
2.193 j2.457
2.359 j2.052
2.987 j1.664
2.162 j1.326
1.604 j1.887
drain
Z
L
gate
Z
S
001aaf059
Fig 1. Definition of transistor impedance
BLL6H1214L-250_1214LS-250#4
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© Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet
Rev. 4 — 1 September 2015
4 of 13
BLL6H1214L(S)-250
LDMOS L-band radar power transistor
7.2 RF performance
001aal166
001aal165
20
350
300
250
200
150
100
50
P
L
G
p
(dB)
(W)
(1)
(2)
(3)
16
12
8
(1)
(2)
(3)
4
0
0
0
50
100
150
200
250
300
P
350
(W)
0
3
6
9
P (W)
i
L
VDS = 50 V; tp = 300 s; = 10 %; IDq = 100 mA.
VDS = 50 V; tp = 300 s; = 10 %; IDq = 100 mA.
(1) f = 1200 MHz
(2) f = 1300 MHz
(3) f = 1400 MHz
(1) f = 1200 MHz
(2) f = 1300 MHz
(3) f = 1400 MHz
Fig 2. Output power as a function of input power;
typical values
Fig 3. Power gain as a function of load power;
typical values
BLL6H1214L-250_1214LS-250#4
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Product data sheet
Rev. 4 — 1 September 2015
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BLL6H1214L(S)-250
LDMOS L-band radar power transistor
001aal167
001aal168
70
20
60
η
D
G
(dB)
η
p
D
(%)
(%)
60
η
D
18
50
40
30
20
10
G
p
50
40
30
20
10
0
(1)
(3)
(2)
16
14
12
10
0
50
100
150
200
250
300
P
350
(W)
1175
1225
1275
1325
1375
1425
f (MHz)
L
VDS = 50 V; tp = 300 s; = 10 %; IDq = 100 mA.
PL = 250 W; VDS = 50 V; tp = 300 s; = 10 %;
Dq = 100 mA.
I
(1) f = 1200 MHz
(2) f = 1300 MHz
(3) f = 1400 MHz
Fig 4. Drain efficiency as a function of load power;
typical values
Fig 5. Power gain and drain efficiency as function of
frequency; typical values
001aal169
20
RL
in
(dB)
16
12
8
4
0
1175
1225
1275
1325
1375
1425
f (MHz)
PL = 250 W; VDS = 50 V; tp = 300 s; = 10 %; IDq = 100 mA.
Fig 6. Input return loss as a function of frequency; typical value
BLL6H1214L-250_1214LS-250#4
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© Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet
Rev. 4 — 1 September 2015
6 of 13
BLL6H1214L(S)-250
LDMOS L-band radar power transistor
7.3 Application circuit
C10
C9
C1
C3
C2
C8
C7
C4
R1
C5
C6
001aal170
See Table 9 for list of components.
Fig 7. Component layout for class-AB application circuit
Table 9.
List of components
See Figure 7.
Striplines are on a Rodgers Duroid 6006 Printed-Circuit Board (PCB); r = 6.15 F/m;
thickness = 0.64 mm
Component Description
Value
Remarks
[1]
[2]
[2]
[3]
[3]
[3]
C1
multilayer ceramic chip capacitor 10 F; 35 V
multilayer ceramic chip capacitor 51 pF
multilayer ceramic chip capacitor 1 nF
multilayer ceramic chip capacitor 82 pF
multilayer ceramic chip capacitor 56 pF
multilayer ceramic chip capacitor 100 pF
C2, C4
C3, C8
C5
C6, C7
C9
C10
electrolytic capacitor
SMD resistor
47 F; 63 V
10
R1
0603
[1] American Technical Ceramics type 100A or capacitor of same quality.
[2] American Technical Ceramics type 100B or capacitor of same quality.
[3] American Technical Ceramics type 800B or capacitor of same quality.
BLL6H1214L-250_1214LS-250#4
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© Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet
Rev. 4 — 1 September 2015
7 of 13
BLL6H1214L(S)-250
LDMOS L-band radar power transistor
8. Package outline
Flanged ceramic package; 2 mounting holes; 2 leads
SOT502A
D
A
F
3
D
1
U
1
B
q
c
C
1
L
p
E
E
1
H
U
2
w
M
M
M
B
A
1
A
2
w
5
b
M
M
C
Q
2
0
10 mm
scale
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
c
A
b
D
D
E
E
F
H
L
p
Q
q
U
U
w
w
2
UNIT
1
1
1
2
1
12.83
12.57
3.38
3.12
1.70
1.45
4.72
3.43
20.02 19.96 9.50
19.61 19.66 9.30
9.53
9.25
1.14 19.94 5.33
0.89 18.92 4.32
34.16 9.91
33.91 9.65
0.15
0.08
27.94
1.100
0.25
0.01
0.51
0.02
mm
0.505
0.495
0.133 0.067
0.123 0.057
0.186
0.135
0.788 0.786 0.374 0.375 0.045 0.785 0.210
0.772 0.774 0.366 0.364 0.035 0.745 0.170
1.345 0.390
1.335 0.380
0.006
0.003
inches
REFERENCES
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
JEDEC
JEITA
03-01-10
12-05-02
SOT502A
Fig 8. Package outline SOT502A
BLL6H1214L-250_1214LS-250#4
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© Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet
Rev. 4 — 1 September 2015
8 of 13
BLL6H1214L(S)-250
LDMOS L-band radar power transistor
Earless flanged ceramic package; 2 leads
SOT502B
D
A
F
3
1
D
D
1
c
U
1
L
E
E
H
U
1
2
2
w
5
b
M
M
D
Q
2
0
10 mm
scale
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
c
A
b
D
D
E
E
F
H
L
Q
U
U
w
2
UNIT
1
1
1
2
12.83
12.57
1.70
1.45
4.72
3.43
20.02 19.96 9.50
19.61 19.66 9.30
9.53
9.25
1.14 19.94 5.33
0.89 18.92 4.32
20.70 9.91
20.45 9.65
0.15
0.08
0.25
mm
0.505
0.495
0.067
0.057
0.186
0.135
0.788 0.786 0.374 0.375 0.045 0.785 0.210
0.772 0.774 0.366 0.364 0.035 0.745 0.170
0.815 0.390
0.805 0.380
0.006
0.003
0.010
inches
REFERENCES
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
JEDEC
JEITA
07-05-09
12-05-02
SOT502B
Fig 9. Package outline SOT502B
BLL6H1214L-250_1214LS-250#4
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Product data sheet
Rev. 4 — 1 September 2015
9 of 13
BLL6H1214L(S)-250
LDMOS L-band radar power transistor
9. Abbreviations
Table 10. Abbreviations
Acronym
LDMOS
LDMOST
RF
Description
Laterally Diffused Metal-Oxide Semiconductor
Laterally Diffused Metal-Oxide Semiconductor Transistor
Radio Frequency
SMD
Surface Mounted Device
VSWR
Voltage Standing-Wave Ratio
10. Revision history
Table 11. Revision history
Document ID
Release
date
Data sheet status Change notice
Supersedes
BLL6H1214L-250_1214LS-250#4
Modifications:
20150901 Product data
sheet
BLL6H1214L-250_1214LS-250#3
• The format of this document has been redesigned to comply with the new identity
guidelines of Ampleon.
• Legal texts have been adapted to the new company name where appropriate.
BLL6H1214L-250_1214LS-250#3
BLL6H1214L-250_1214LS-250#2
BLL6H1214L-250_1214LS-250#1
20100714 Product data
sheet
-
-
-
BLL6H1214L-250_1214LS-250#2
20100302 Objective data
sheet
BLL6H1214L-250_1214LS-250#1
-
20091211 Objective data
sheet
BLL6H1214L-250_1214LS-250#4
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© Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet
Rev. 4 — 1 September 2015
10 of 13
BLL6H1214L(S)-250
LDMOS L-band radar power transistor
11. Legal information
11.1 Data sheet status
Document status[1][2]
Product status[3]
Development
Definition
Objective [short] data sheet
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Preliminary [short] data sheet Qualification
Product [short] data sheet Production
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term ‘short data sheet’ is explained in section “Definitions”.
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.ampleon.com.
Ampleon product can reasonably be expected to result in personal injury,
11.2 Definitions
death or severe property or environmental damage. Ampleon and its
suppliers accept no liability for inclusion and/or use of Ampleon products in
such equipment or applications and therefore such inclusion and/or use is at
the customer’s own risk.
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. Ampleon does not give any representations or
warranties as to the accuracy or completeness of information included herein
and shall have no liability for the consequences of use of such information.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. Ampleon makes no representation
or warranty that such applications will be suitable for the specified use without
further testing or modification.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local Ampleon sales office. In
case of any inconsistency or conflict with the short data sheet, the full data
sheet shall prevail.
Customers are responsible for the design and operation of their applications
and products using Ampleon products, and Ampleon accepts no liability for
any assistance with applications or customer product design. It is customer’s
sole responsibility to determine whether the Ampleon product is suitable and
fit for the customer’s applications and products planned, as well as for the
planned application and use of customer’s third party customer(s). Customers
should provide appropriate design and operating safeguards to minimize the
risks associated with their applications and products.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
Ampleon and its customer, unless Ampleon and customer have explicitly
agreed otherwise in writing. In no event however, shall an agreement be valid
in which the Ampleon product is deemed to offer functions and qualities
beyond those described in the Product data sheet.
Ampleon does not accept any liability related to any default, damage, costs or
problem which is based on any weakness or default in the customer’s
applications or products, or the application or use by customer’s third party
customer(s). Customer is responsible for doing all necessary testing for the
customer’s applications and products using Ampleon products in order to
avoid a default of the applications and the products or of the application or
use by customer’s third party customer(s). Ampleon does not accept any
liability in this respect.
11.3 Disclaimers
Limited warranty and liability — Information in this document is believed to
be accurate and reliable. However, Ampleon does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information. Ampleon takes no responsibility for
the content in this document if provided by an information source outside of
Ampleon.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
In no event shall Ampleon be liable for any indirect, incidental, punitive,
special or consequential damages (including - without limitation - lost profits,
lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Terms and conditions of commercial sale — Ampleon products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.ampleon.com/terms, unless otherwise agreed in a valid written
individual agreement. In case an individual agreement is concluded only the
terms and conditions of the respective agreement shall apply. Ampleon
hereby expressly objects to applying the customer’s general terms and
conditions with regard to the purchase of Ampleon products by customer.
Notwithstanding any damages that customer might incur for any reason
whatsoever, Ampleon’ aggregate and cumulative liability towards customer
for the products described herein shall be limited in accordance with the
Terms and conditions of commercial sale of Ampleon.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Right to make changes — Ampleon reserves the right to make changes to
information published in this document, including without limitation
specifications and product descriptions, at any time and without notice. This
document supersedes and replaces all information supplied prior to the
publication hereof.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from competent authorities.
Suitability for use — Ampleon products are not designed, authorized or
warranted to be suitable for use in life support, life-critical or safety-critical
systems or equipment, nor in applications where failure or malfunction of an
BLL6H1214L-250_1214LS-250#4
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© Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet
Rev. 4 — 1 September 2015
11 of 13
BLL6H1214L(S)-250
LDMOS L-band radar power transistor
Non-automotive qualified products — Unless this data sheet expressly
states that this specific Ampleon product is automotive qualified, the product
is not suitable for automotive use. It is neither qualified nor tested in
accordance with automotive testing or application requirements. Ampleon
accepts no liability for inclusion and/or use of non-automotive qualified
products in automotive equipment or applications.
11.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
Any reference or use of any ‘NXP’ trademark in this document or in or on the
surface of Ampleon products does not result in any claim, liability or
entitlement vis-à-vis the owner of this trademark. Ampleon is no longer part of
the NXP group of companies and any reference to or use of the ‘NXP’
trademarks will be replaced by reference to or use of Ampleon’s own Any
reference or use of any ‘NXP’ trademark in this document or in or on the
surface of Ampleon products does not result in any claim, liability or
entitlement vis-à-vis the owner of this trademark. Ampleon is no longer part of
the NXP group of companies and any reference to or use of the ‘NXP’
trademarks will be replaced by reference to or use of Ampleon’s own
trademarks.
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards, customer
(a) shall use the product without Ampleon’ warranty of the product for such
automotive applications, use and specifications, and (b) whenever customer
uses the product for automotive applications beyond Ampleon’ specifications
such use shall be solely at customer’s own risk, and (c) customer fully
indemnifies Ampleon for any liability, damages or failed product claims
resulting from customer design and use of the product for automotive
applications beyond Ampleon’ standard warranty and Ampleon’ product
specifications.
12. Contact information
For more information, please visit:
http://www.ampleon.com
For sales office addresses, please visit:
http://www.ampleon.com/sales
BLL6H1214L-250_1214LS-250#4
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Product data sheet
Rev. 4 — 1 September 2015
12 of 13
BLL6H1214L(S)-250
LDMOS L-band radar power transistor
13. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1
1.2
1.3
General description . . . . . . . . . . . . . . . . . . . . . 1
Features and benefits. . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
2
Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
Ordering information. . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics . . . . . . . . . . . . . . . . . . 3
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 3
Ruggedness in class-AB operation . . . . . . . . . 4
3
4
5
6
6.1
7
Application information. . . . . . . . . . . . . . . . . . . 4
Impedance information . . . . . . . . . . . . . . . . . . . 4
RF performance . . . . . . . . . . . . . . . . . . . . . . . . 5
Application circuit . . . . . . . . . . . . . . . . . . . . . . . 7
7.1
7.2
7.3
8
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8
Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . 10
Revision history. . . . . . . . . . . . . . . . . . . . . . . . 10
9
10
11
Legal information. . . . . . . . . . . . . . . . . . . . . . . 11
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 11
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 12
11.1
11.2
11.3
11.4
12
13
Contact information. . . . . . . . . . . . . . . . . . . . . 12
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© Ampleon The Netherlands B.V. 2015.
All rights reserved.
For more information, please visit: http://www.ampleon.com
For sales office addresses, please visit: http://www.ampleon.com/sales
Date of release: 1 September 2015
Document identifier: BLL6H1214L-250_1214LS-250#4
相关型号：
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