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BSS70R [ETC]

SOT23 PNP SILICON PLANAR MEDIUM POWER SWITCHING TRANSISTORS; SOT23封装PNP硅平面中功率开关晶体管
BSS70R
型号： BSS70R
厂家： ETC    ETC
描述：

SOT23 PNP SILICON PLANAR MEDIUM POWER SWITCHING TRANSISTORS
SOT23封装PNP硅平面中功率开关晶体管

晶体 开关 晶体管 光电二极管 局域网
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中文：  中文翻译
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SOT23 PNP SILICON PLANAR MEDIUM  
POWER SWITCHING TRANSISTORS  
BSS69  
BSS70  
ISSUE 2 – SEPTEMBER 1995  
✪
PARTMARKING DETAILS — BSS69 - L2  
BSS70 - L3  
E
C
BSS69R - L6  
BSS70R - L7  
B
ABSOLUTE MAXIMUM RATINGS.  
PARAMETER  
SYMBOL  
VCBO  
VCEO  
VEBO  
ICM  
VALUE  
-40  
UNIT  
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
-40  
V
-5  
V
Peak Pulse Current  
-200  
mA  
mA  
mA  
mW  
°C  
Continuous Collector Current  
Base Current  
IC  
-100  
IB  
-50  
Power Dissipation at Tamb=25°C  
Operating and Storage Temperature Range  
PTOT  
tj:tstg  
330  
-55 to +150  
ELECTRICAL CHARACTERISTICS (at T  
= 25°C).  
amb  
PARAMETER  
SYMBOL MIN. MAX. UNIT  
CONDITIONS.  
Collector-Emitter Breakdown Voltage  
Collector-Base Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Collector- Emitter Cut-off Current  
V
V
V
I
-40  
-40  
-5  
V
I =-1mA  
I =-10µA  
I =-10µA  
V
V
-50  
nA  
V
=-30V  
Collector-Emitter  
Saturation Voltage  
V
-0.25  
-0.40  
V
V
I =-10mA, I =-1mA  
I =-50mA, I =-5mA*  
Base-Emitter Saturation Voltage  
V
h
-0.65  
-0.85  
-0.95  
V
V
I =-10mA, I =-1mA  
C
I =-50mA, I =-5mA*  
Static Forward Current  
Transfer Ratio  
BSS69  
30  
40  
50  
30  
15  
I =-100µA,  
I =-1mA,  
150  
300  
I =-10mA, V =-1V  
I =-50mA*,  
I =-100mA*,  
Static Forward Current  
Transfer Ratio  
BSS70  
h
60  
80  
100  
60  
30  
I =-100µA,  
I =-1mA,  
I =-10mA, V =-1V  
I =-50mA*,  
I =-100mA*,  
Transition Frequency  
BSS69  
BSS70  
f
200  
250  
MHz  
MHz  
I =-10mA, V =-20V  
f=100MHz  
Collector-Base Capacitance  
Emitter-Base Capacitance  
Noise Figure  
C
C
N
4.5  
10  
pF  
pF  
dB  
V
V
=-5V, f=100kHz  
=-0.5V, f=100kHz  
Typ. 5  
I =-100µΑ, V =-5V  
R =1kΩ, f=10Hz to15.7 kHz  
Switching times: Delay; Rise  
Storage Time  
Fall Time  
t ; t  
35  
ns  
ns  
ns  
V
I
=-3V, I =-10mA  
= I =-1mA  
t
t
225  
70  
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%  
PAGE NUMBER  

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