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CSD1163 [ETC]

TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 7A I(C) | TO-220AB ; 晶体管| BJT | NPN | 120V V（ BR ） CEO | 7A I（C ） | TO- 220AB\n
CSD1163
型号： CSD1163
厂家： ETC    ETC
描述：

TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 7A I(C) | TO-220AB
晶体管| BJT | NPN | 120V V（ BR ） CEO | 7A I（C ） | TO- 220AB\n

晶体 晶体管 局域网
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相关型号：

CSD1163A

 TRANSISTOR | BJT | NPN | 150V V(BR)CEO | 7A I(C) | TO-220AB

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ETC

CSD1168

 TRANSISTOR | BJT | NPN | 400V V(BR)CEO | 5A I(C) | TO-3

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ETC

CSD1168P

 TRANSISTOR | BJT | NPN | 800V V(BR)CEO | 5A I(C) | TO-3

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ETC

CSD1168Q

 TRANSISTOR | BJT | NPN | 800V V(BR)CEO | 5A I(C) | TO-3

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ETC

CSD13002

 NPN SILICON PLANAR EPITAXIAL, HIGH SPEED, HIGH VOLTAGE SWITCHING TRANSISTOR

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CDIL

CSD1306

 NPN SILICON PLANAR EPITAXIAL TRANSISTOR

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CDIL

CSD1306D

 NPN SILICON PLANAR EPITAXIAL TRANSISTOR

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CDIL

CSD1306E

 NPN SILICON PLANAR EPITAXIAL TRANSISTOR

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CDIL

CSD1306E

 SOT-23 - Power Transistor and Darlingtons

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RECTRON

CSD1306F

 NPN SILICON PLANAR EPITAXIAL TRANSISTOR

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CDIL

CSD13201W10

 N-Channel NexFET Power MOSFET

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TI

CSD13201W10_15

 N-Channel NexFET Power MOSFET

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-
TI

CSD13202Q2

 12V N-Channel NexFET Power MOSFETs

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TI

CSD13302W

 采用 1mm x 1mm WLP 封装的单路、17.1mΩ、12V、N 沟道 NexFET™ 功率 MOSFET

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TI

CSD13302WT

 采用 1mm x 1mm WLP 封装的单路、17.1mΩ、12V、N 沟道 NexFET™ 功率 MOSFET | YZB | 4 | -55 to 150

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TI

CSD13303W1015

 N-Channel NexFET™ Power MOSFET

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TI

CSD13306W

 采用 1mm x 1.5mm WLP 封装的单路、10.2mΩ、12V、N 沟道 NexFET™ 功率 MOSFET

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TI

CSD13306WT

 采用 1mm x 1.5mm WLP 封装的单路、10.2mΩ、12V、N 沟道 NexFET™ 功率 MOSFET | YZC | 6 | -55 to 150

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TI

CSD13380F3

 采用 0.6mm x 0.7mm LGA 封装、具有栅极 ESD 保护的单路、76mΩ、12V、N 沟道 NexFET™ 功率 MOSFET

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TI

CSD13380F3T

 采用 0.6mm x 0.7mm LGA 封装、具有栅极 ESD 保护的单路、76mΩ、12V、N 沟道 NexFET™ 功率 MOSFET | YJM | 3 | -55 to 150

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TI
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