CSD13201W10_15 [TI]
N-Channel NexFET Power MOSFET;型号: | CSD13201W10_15 |
厂家: | TEXAS INSTRUMENTS |
描述: | N-Channel NexFET Power MOSFET |
文件: | 总13页 (文件大小:1265K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
CSD13201W10
www.ti.com
SLPS306 –MAY 2012
N-Channel NexFET™ Power MOSFET
Check for Samples: CSD13201W10
1
FEATURES
PRODUCT SUMMARY
•
•
•
•
•
•
•
Ultra Low Qg and Qgd
Small Footprint 1mm × 1mm
Low Profile 0.62mm Height
Pb Free
VDS
Qg
Drain to Source Voltage
Gate Charge Total (4.5V)
Gate Charge Gate to Drain
12
2.3
0.3
V
nC
nC
Qgd
VGS = 1.8V
38
29
26
mΩ
Drain to Source On
Resistance
RDS(on)
VGS = 2.5V
VGS = 4.5V
RoHS Compliant
mΩ
Halogen Free
VGS(th)
Threshold Voltage
0.8
V
Gate-Source Voltage Clamp
ORDERING INFORMATION
APPLICATIONS
Device
Package
Media
Qty
Ship
•
•
•
Battery Management
Load Switch
1 × 1 Wafer Level
Package
Tape and
Reel
CSD13201W10
7-inch reel
3000
Battery Protection
ABSOLUTE MAXIMUM RATINGS
TA = 25°C unless otherwise stated
VALUE
UNIT
V
DESCRIPTION
VDS
VGS
Drain to Source Voltage
Gate to Source Voltage
12
The device has been designed to deliver the lowest
on resistance and gate charge in the smallest outline
possible with excellent thermal characteristics in an
ultra low profile.
±8
V
Continuous Drain Current, TA
25°C(1)
=
ID
1.6
A
IDM
PD
Pulsed Drain Current, TA = 25°C(2)
Power Dissipation(1)
20.2
1.2
A
W
Figure 1. Top View
Operating Junction and Storage
Temperature Range
TJ, TSTG
–55 to 150
°C
(1) RθJA = 105°C/W on 1in2 Cu (2 oz.) on 0.060" thick FR4 PCB.
(2) Pulse width ≤ 300 μs, duty cycle ≤ 2%
RDS(on) vs VGS
GATE CHARGE
60
5
TC = 25°C Id = 1A
TC = 125ºC Id = 1A
ID = 1A
VDS = 6V
55
50
45
40
35
30
25
20
15
10
4
3
2
1
0
0
1
2
3
4
5
6
7
8
0
0.5
1
1.5
2
2.5
Qg - Gate Charge - nC (nC)
VGS - Gate-to- Source Voltage - V
G001
G001
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2012, Texas Instruments Incorporated
CSD13201W10
SLPS306 –MAY 2012
www.ti.com
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise stated)
PARAMETER
Static Characteristics
TEST CONDITIONS
MIN
TYP
MAX
UNIT
BVDSS
IDSS
Drain to Source Voltage
VGS = 0V, ID = 250μA
12
V
μA
nA
V
Drain to Source Leakage Current
Gate to Source Leakage Current
Gate to Source Threshold Voltage
VGS = 0V, VDS = 9.6V
VDS = 0V, VGS = 8V
VDS = VGS, ID = 250μA
VGS = 1.8V, ID = 1A
VGS = 2.5V, ID = 1A
VGS = 4.5V, ID = 1A
VDS = 6V, ID = 1A
1
100
1.1
53
IGSS
VGS(th)
0.65
0.8
38
29
26
23
mΩ
RDS(on)
Drain to Source On Resistance
Transconductance
39
34
mΩ
gfs
S
Dynamic Characteristics
CISS
COSS
CRSS
Rg
Input Capacitance
385
245
18.1
3
462
294
pF
pF
pF
Ω
Output Capacitance
Reverse Transfer Capacitance
Series Gate Resistance
Gate Charge Total (4.5V)
Gate Charge Gate to Drain
Gate Charge Gate to Source
Gate Charge at Vth
Output Charge
VGS = 0V, VDS = 6V, f = 1MHz
22.6
Qg
2.3
0.3
0.5
0.3
1.8
3.9
5.9
14.4
9.7
2.9
nC
nC
nC
nC
nC
ns
ns
ns
ns
Qgd
Qgs
Qg(th)
QOSS
td(on)
tr
VDS = 6V, ID = 1A
VDS = 6.0V, VGS = 0V
Turn On Delay Time
Rise Time
VDS = 6V, VGS = 4.5V, ID = 1A
RG = 20Ω
td(off)
tf
Turn Off Delay Time
Fall Time
Diode Characteristics
VSD
Qrr
trr
Diode Forward Voltage
IS = 1A, VGS = 0V
0.7
2.4
1
V
Reverse Recovery Charge
Reverse Recovery Time
nC
ns
VDS= 6V, IS = 1A, di/dt = 100A/μs
11.5
THERMAL CHARACTERISTICS
(TA = 25°C unless otherwise stated)
PARAMETER
MIN
TYP
MAX UNIT
228.6 °C/W
131.1 °C/W
RθJA
RθJA
Thermal Resistance Junction to Ambient (Minimum Cu area)
Thermal Resistance Junction to Ambient (1 in2 Cu area)
2
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Copyright © 2012, Texas Instruments Incorporated
Product Folder Link(s): CSD13201W10
CSD13201W10
www.ti.com
SLPS306 –MAY 2012
Max RθJA = 228.6°C/W
when mounted on
minimum pad area of 2
oz. Cu.
Max RθJA = 131.1°C/W
when mounted on
1inch2 of 2 oz. Cu.
TYPICAL MOSFET CHARACTERISTICS
(TA = 25°C unless otherwise stated)
Figure 2. Transient Thermal Impedance
Copyright © 2012, Texas Instruments Incorporated
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3
Product Folder Link(s): CSD13201W10
CSD13201W10
SLPS306 –MAY 2012
www.ti.com
TYPICAL MOSFET CHARACTERISTICS (continued)
(TA = 25°C unless otherwise stated)
10
9
8
7
6
5
4
3
2
1
0
10
8
VDS = 5V
6
4
VGS =6V
VGS =4.5V
VGS =1.5V
TC = 125°C
TC = 25°C
TC = −55°C
2
0
0.5
0
1
2
3
4
5
1
1.5
2
VDS - Drain-to-Source Voltage - V
VGS - Gate-to-Source Voltage - V
G001
G001
Figure 3. Saturation Characteristics
Figure 4. Transfer Characteristics
5
4
3
2
1
0
0.5
0.4
0.3
0.2
0.1
0
Ciss = Cgd + Cgs
Coss = Cds + Cgd
Crss = Cgd
ID = 1A
VDS = 6V
0
0.5
1
1.5
2
2.5
0
2
4
6
8
10
12
Qg - Gate Charge - nC (nC)
VDS - Drain-to-Source Voltage - V
G001
G001
Figure 5. Gate Charge
Figure 6. Capacitance
1.5
1.2
0.9
0.6
0.3
0
60
55
50
45
40
35
30
25
20
15
10
ID = 250uA
TC = 25°C Id = 1A
TC = 125ºC Id = 1A
−75
−25
25
75
125
175
0
1
2
3
4
5
6
7
8
TC - Case Temperature - ºC
VGS - Gate-to- Source Voltage - V
G001
G001
Figure 7. Threshold Voltage vs. Temperature
Figure 8. On Resistance vs. Gate Voltage
4
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Copyright © 2012, Texas Instruments Incorporated
Product Folder Link(s): CSD13201W10
CSD13201W10
www.ti.com
SLPS306 –MAY 2012
TYPICAL MOSFET CHARACTERISTICS (continued)
(TA = 25°C unless otherwise stated)
2
10
1
VGS = 1.8V
VGS = 2.5V
VGS = 4.5V
ID =1A
TC = 25°C
TC = 125°C
1.8
1.6
1.4
1.2
1
0.1
0.01
0.001
0.0001
0.8
0.6
0.4
−75
−25
25
75
125
175
0
0.2
0.4
0.6
0.8
1
TC - Case Temperature - ºC
VSD − Source-to-Drain Voltage - V
G001
G001
Figure 9. On Resistance vs. Temperature
Figure 10. Typical Diode Forward Voltage
2.0
1.5
1.0
0.5
0.0
−50 −25
0
25
50
75
100 125 150 175
TC - Case Temperature - ºC
G001
Figure 11. Maximum Safe Operating Area
Figure 12. Maximum Drain Current vs. Temperature
Copyright © 2012, Texas Instruments Incorporated
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5
Product Folder Link(s): CSD13201W10
CSD13201W10
SLPS306 –MAY 2012
www.ti.com
MECHANICAL DATA
CSD13201W10 Package Dimensions
Pin 1
Mark
Solder Ball
Ø 0.31 0.0ꢀ5
1
2
2
1
A
B
A
B
+0.00
–0.10
1.00
0.62 Max
0.50
Bottom View
Top View
Side View
Seating Plate
Front View
NOTE: All dimensions are in mm (unless otherwise specified)
M0151-01
Pin Configuration Table
POSITION
A2
DESIGNATION
Source
A1
Gate
B1, B2
Drain
Land Pattern Recommendation
Ø 0.25
1
2
A
B
0.50
M0152-01
NOTE: All dimensions are in mm (unless otherwise specified)
6
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Copyright © 2012, Texas Instruments Incorporated
Product Folder Link(s): CSD13201W10
CSD13201W10
www.ti.com
SLPS306 –MAY 2012
Tape and Reel Information
4.00 0.10
2.00 0.0ꢀ
Ø 1.ꢀ0 0.10
ꢀ° Max
4.00 0.10
Ø 0.ꢀ0 0.0ꢀ
0.78 0.0ꢀ
0.2ꢀ4 0.02
ꢀ° Max
1.18 0.0ꢀ
M01ꢀ3-01
NOTE: All dimensions are in mm (unless otherwise specified
Copyright © 2012, Texas Instruments Incorporated
Submit Documentation Feedback
7
Product Folder Link(s): CSD13201W10
PACKAGE OPTION ADDENDUM
www.ti.com
24-Jan-2014
PACKAGING INFORMATION
Orderable Device
Status Package Type Package Pins Package
Eco Plan
Lead/Ball Finish
MSL Peak Temp
Op Temp (°C)
Device Marking
Samples
Drawing
Qty
(1)
(2)
(6)
(3)
(4/5)
CSD13201W10
ACTIVE
DSBGA
YZB
4
3000
Green (RoHS
& no Sb/Br)
SNAGCU
Level-1-260C-UNLIM
-55 to 150
201
(1) The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability
information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that
lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between
the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight
in homogeneous material)
(3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.
(5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.
(6) Lead/Ball Finish - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead/Ball Finish values may wrap to two lines if the finish
value exceeds the maximum column width.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
Addendum-Page 1
PACKAGE OPTION ADDENDUM
www.ti.com
24-Jan-2014
Addendum-Page 2
PACKAGE MATERIALS INFORMATION
www.ti.com
18-Jan-2014
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device
Package Package Pins
Type Drawing
SPQ
Reel
Reel
A0
B0
K0
P1
W
Pin1
Diameter Width (mm) (mm) (mm) (mm) (mm) Quadrant
(mm) W1 (mm)
CSD13201W10
DSBGA
YZB
4
3000
180.0
8.4
1.06
1.06
0.69
4.0
8.0
Q1
Pack Materials-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com
18-Jan-2014
*All dimensions are nominal
Device
Package Type Package Drawing Pins
DSBGA YZB
SPQ
Length (mm) Width (mm) Height (mm)
182.0 182.0 17.0
CSD13201W10
4
3000
Pack Materials-Page 2
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