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CSD811 [ETC]

TRANSISTOR | BJT | DARLINGTON | NPN | 110V V(BR)CEO | 8A I(C) | TO-220AB ; 晶体管| BJT |达林顿| NPN | 110V V（ BR ） CEO | 8A I（C ） | TO- 220AB\n
CSD811
型号： CSD811
厂家： ETC    ETC
描述：

TRANSISTOR | BJT | DARLINGTON | NPN | 110V V(BR)CEO | 8A I(C) | TO-220AB
晶体管| BJT |达林顿| NPN | 110V V（ BR ） CEO | 8A I（C ） | TO- 220AB\n

晶体 晶体管
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相关型号：

CSD822D

 Optoelectronic

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ETC

CSD822E

 Optoelectronic

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ETC

CSD822G

 Optoelectronic

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ETC

CSD822H

 Optoelectronic

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ETC

CSD822S

 Optoelectronic

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ETC

CSD822Y

 Optoelectronic

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ETC

CSD823D

 Optoelectronic

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ETC

CSD823E

 Optoelectronic

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ETC

CSD823H

 Optoelectronic

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ETC

CSD823S

 Optoelectronic

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ETC

CSD823Y

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ETC

CSD83325L

 采用 LGA 封装、具有栅极 ESD 保护的双路、5.9mΩ、12V、N 沟道 NexFET™ 功率 MOSFET

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TI

CSD83325LT

 采用 LGA 封装、具有栅极 ESD 保护的双路、5.9mΩ、12V、N 沟道 NexFET™ 功率 MOSFET | YJE | 6 | -55 to 150

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CSD85301Q2

 采用 2mm x 2mm SON 封装、具有栅极 ESD 保护的双路、27mΩ、20V、N 沟道 NexFET™ 功率 MOSFET

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CSD85301Q2T

 采用 2mm x 2mm SON 封装、具有栅极 ESD 保护的双路、27mΩ、20V、N 沟道 NexFET™ 功率 MOSFET | DQK | 6 | -55 to 150

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CSD85302L

 采用 1.35mm x 1.35mm LGA 封装、具有栅极 ESD 保护的双路共漏极、24mΩ、20V、N 沟道 NexFET™ 功率 MOSFET

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CSD85302LT

 采用 1.35mm x 1.35mm LGA 封装、具有栅极 ESD 保护的双路共漏极、24mΩ、20V、N 沟道 NexFET™ 功率 MOSFET | YME | 4 | -55 to 150

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CSD85312Q3E

 Dual 20 V N-Channel NexFE Power MOSFETs

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CSD863

 Transistor

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CSD86311W1723

 Dual N-Channel NexFET™ Power MOSFET

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TI
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