CXG1144EN [ETC]

High Power DPDT Switch with Logic Control ; 大功率双刀双掷开关与逻辑控制\n
CXG1144EN
型号: CXG1144EN
厂家: ETC    ETC
描述:

High Power DPDT Switch with Logic Control
大功率双刀双掷开关与逻辑控制\n

开关 光电二极管
文件: 总7页 (文件大小:60K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
CXG1144EN  
High Power DPDT Switch with Logic Control  
Description  
10 pin VSON (Plastic)  
The CXG1144EN is a high power DPDT switch  
MMIC.This IC can be used in wireless communication  
systems, for example, CDMA handsets with GPS.  
The CXG1144EN can be operated by one CMOS  
control line. The Sony's J-FET process is used for low  
insertion loss and on-chip logic circuit.  
Features  
Low insertion loss: 0.30dB @900MHz,  
0.45dB @1900MHz  
High linearity: IIP3 (Typ.) = 65dBm  
1 CMOS compatible control line  
Small package size: 10-pin VSON  
Applications  
Dual-band cellular handsets  
CDMA with GPS, dual-band CDMA  
Structure  
GaAs J-FET MMIC  
Absolute Maximum Ratings (Ta = 25°C)  
Bias voltage  
VDD  
Vctl  
7
V
V
Control voltage  
5
Operating temperature Topr  
Storage temperature Tstg  
–35 to +85  
–65 to +150  
°C  
°C  
GaAs MMICs are ESD sensitive devices. Special handling precautions are required.  
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by  
any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the  
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.  
– 1 –  
E02748-PS  
CXG1144EN  
Block Diagram andTerminal Arrangement Figure  
GND (recommended)  
6
7
5
4
3
2
1
RF3  
GND  
GND  
RF4  
RF2  
GND  
GND  
RF1  
CTL  
F2  
F3  
F1  
8
F4  
9
V
DD  
Logic  
10  
DD  
V
GND (recommended)  
TruthTable  
CTL  
ON state  
OFF state  
F1  
F2  
F3  
F4  
L
RF1 – RF2, RF3 – RF4  
RF2 – RF3, RF4 – RF1  
RF2 RF3, RF4 RF1  
RF1 RF2, RF3 RF4  
ON OFF ON OFF  
OFF ON OFF ON  
H
Pin Description 1  
Pin No. Symbol  
Description  
1
2
CTL  
RF1  
GND  
GND  
RF2  
RF3  
GND  
GND  
RF4  
VDD  
Control signal input  
RF signal input  
GND  
3
4
GND  
5
RF signal output  
RF signal input  
GND  
6
7
8
GND  
9
RF signal output  
Power supply input  
10  
– 2 –  
CXG1144EN  
Pin Description 2  
Pin No. Symbol  
Equivalent circuit  
1
Logic  
1
CTL  
10  
F1 to F4  
10  
VDD  
DC Bias Condition  
(Ta = 25°C)  
Item  
Vctl (H)  
Vctl (L)  
VDD  
Min.  
2.0  
0
Typ.  
3.0  
Max.  
3.6  
Unit  
V
0.4  
V
2.7  
3.0  
3.6  
V
3 –  
CXG1144EN  
Electrical Characteristics  
(Ta = 25°C, VDD = 3.0V)  
Item  
Symbol  
IL  
Condition  
Min.  
Typ.  
0.30  
0.45  
21  
Max. Unit  
900MHz  
1.9GHz  
900MHz  
1.9GHz  
0.55  
0.70  
dB  
dB  
Insertion loss  
18  
14  
dB  
Isolation  
VSWR  
ISO.  
VSWR  
2fo  
16  
dB  
50  
1.2  
75  
75  
75  
75  
65  
1
60  
60  
60  
60  
dBc  
dBc  
dBc  
dBc  
dBm  
dBm  
dBm  
µs  
3
1
3
2
4
Harmonics  
Input IP3  
3fo  
55  
55  
32  
IIP3  
65  
1dB compression input power P1dB  
VDD = 2.8V  
35  
Switching speed  
Bias current  
TSW  
IDD  
1
5
VDD = 3.0V  
55  
200  
100  
µA  
Control current  
Ictl  
Vctl (H) = 3V  
40  
µA  
Condition  
1
Pin = 25dBm, 0/3V control, VDD = 3.0V, 900MHz  
2
3
4
Pin = 25dBm (900MHz) +25dBm (901MHz), 0/3V control, VDD = 3.0V  
Pin = 25dBm, 0/3V control, VDD = 3.0V, 1.9GHz  
Pin = 25dBm (1.9GHz) +25dBm (1.901GHz), 0/3V control, VDD = 3.0V  
4 –  
CXG1144EN  
Electrical Characteristics Measurement Circuit  
GND (recommended)  
6
7
5
4
3
2
1
RF3  
RF2  
C
RF (100pF)  
C
RF (100pF)  
GND  
GND  
8
GND  
GND  
9
RF1  
RF4  
CRF (100pF)  
CRF (100pF)  
Rctl (1k)  
10  
V
DD  
CTL  
Cbypass (100pF)  
Cbypass (100pF)  
GND (recommended)  
When using this IC, the following external components should be used:  
Rctl:  
This resistor is used to improve ESD performance. 1kis recommended.  
This capacitor is used for RF de-coupling and must be used for all applications.  
100pF is recommended.  
CRF:  
Cbypass: This capacitor is used for DC line filtering. 100pF is recommended.  
5 –  
CXG1144EN  
Typical Characteristics  
Frequency vs. Insertion loss  
0
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
0
0.5  
1.0  
1.5  
2.0  
Frequency [GHz]  
Frequency vs. Isolation  
0
5
10  
15  
20  
25  
30  
35  
40  
45  
50  
0
0.5  
1.0  
1.5  
2.0  
Frequency [GHz]  
6 –  
CXG1144EN  
Package Outline  
Unit: mm  
10PIN VSON(PLASTIC)  
+ 0.1  
0.8 0.05  
0.6  
2.5  
0.05  
S
A
S
6
10  
PIN 1 INDEX  
1
5
B
x2  
0.4  
0.8  
0.35 ± 0.1  
S
0.15  
B
x4  
0.15  
AB  
S
A
B
0.05 M  
S
Solder Plating  
0.13 ± 0.025  
+ 0.09  
0.14 0.03  
TERMINAL SECTION  
1) The dimensions of the terminal section apply to the  
NOTE:  
ranges of 0.1mm and 0.25mm from the end of a terminal.  
PACKAGE STRUCTURE  
EPOXY RESIN  
PACKAGE MATERIAL  
LEAD TREATMENT  
LEAD MATERIAL  
SOLDER PLATING  
COPPER ALLOY  
0.013g  
SONY CODE  
VSON-10P-01  
EIAJ CODE  
JEDEC CODE  
PACKAGE MASS  
LEAD SPECIFICATIONS  
ITEM  
LEAD MATERIAL  
LEAD TREATMENT  
SPEC.  
COPPER ALLOY  
Sn-Bi 2.5%  
LEAD TREATMENT THICKNESS 5-18µm  
Sony Corporation  
7 –  

相关型号:

CXG1146EN

High Power SP3T Switch with Logic Control
ETC

CXG1150ER

Triple Low Noise Amplifier/Dual Mixer
ETC

CXG1156K

POWER AMPLIFIER MODULE FOR JCDMA
SONY

CXG1158K

Power Amplifier Module for JCDMA
SONY

CXG1166AER

High Power 3 x 5 Antenna Switch MMIC with Integrated Control Logic
SONY

CXG1166ER

High Power 3 × 5 Antenna Switch MMIC with Integrated Control Logic
SONY

CXG1171UR

Diversity Switch, 1920MHz Min, 2170MHz Max, 1 Func, 1.15dB Insertion Loss-Max, GAAS, 2.70 X 2.70 MM, PLASTIC, UQFN-20
SONY

CXG1172UR

JPHEMT High Power DPDT Switch with Logic Control
SONY

CXG1173UR

High Power SPDT Switch with Logic Control
SONY

CXG1174UR

High Power SP3T Switch with Logic Control
SONY

CXG1175UR

Diversity Switch, 830MHz Min, 2170MHz Max, 1 Func, 0.8dB Insertion Loss-Max, GAAS, PLASTIC, UQFN-20
SONY

CXG1176UR

High Power DPDT Switch with Logic Control
SONY