EDI8F81026C85M6C [ETC]

1Mx8 STATIC RAM CMOS, MODULE; 1Mx8静态RAM CMOS ,模块
EDI8F81026C85M6C
型号: EDI8F81026C85M6C
厂家: ETC    ETC
描述:

1Mx8 STATIC RAM CMOS, MODULE
1Mx8静态RAM CMOS ,模块

文件: 总6页 (文件大小:154K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
EDI8F81026C  
White Electronic Designs  
1Mx8 STATIC RAM CMOS, MODULE  
FEATURES  
DESCRIPTION  
The EDI8F81026C is an 8Mb CMOS Static RAM based  
on two 512Kx8 Static RAMs mounted on a multi-layered  
epoxy laminate (FR4) substrate.  
1Mx8 bit CMOS Static RAM  
• Access Times 20 through 35ns  
• TTL Compatible Inputs and Outputs  
• Fully Static, No Clocks  
The EDI8F81026C is packaged in a 36 pin DIP and features  
the JEDEC approved, revolutionary pinout.  
High Density Packaging  
All inputs and outputs are TTLcompatible and operate from  
a single 5V supply.  
• JEDEC Aproved, Revolutionary Pinout  
• 36 Pin DIP, No. 179  
Fully asynchronous, the EDI8F81026C requires no clocks  
or refreshing for operation.  
Single +5V ( 10ꢀ) Supply Operation  
Pin Configuration  
Pin Description  
A0-A19  
E#  
W#  
Address Inputs  
Chip Enable  
Write Enable  
Output Enable  
A0 1  
A1 2  
36 NC  
35 A19  
34 A18  
33 A17  
32 A16  
31 G#  
G#  
A2 3  
DQ0-DQ7 Common Data Input/Output  
A3 4  
VCC  
VSS  
NC  
Power (+5V 10ꢀ%  
Ground  
No Connection  
A4 5  
E# 6  
DQ0 7  
DQ1 8  
30 DQ7  
29 DQ6  
28 VSS  
27 VCC  
26 DQ5  
25 DQ4  
24 A15  
23 A14  
22 A13  
21 A12  
20 A11  
19 A10  
V
CC  
9
VSS 10  
DQ2 11  
DQ3 12  
W# 13  
A5 14  
A6 15  
A7 16  
A8 17  
A9 18  
Block Diagram  
A0-A18  
512k  
DQ0-DQ7  
W#  
x 8  
G#  
512k  
x 8  
A19  
E#  
DECODER  
July 2004  
Rev. 0  
1
White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com  
EDI8F81026C  
White Electronic Designs  
ABSOLUTE MAXIMUM RATINGS*  
RECOMMENDED DC OPERATING CONDITIONS  
Voltage on any pin relative to VSS  
Operating Temperature TA (Ambient%  
Commercial  
-0.5V to 7.0V  
Parameter  
Sym  
VCC  
VSS  
VIH  
Min  
4.5  
0
2.2  
-0.3  
Typ  
5.0  
0
Max  
5.5  
0
6.0  
0.8  
Units  
Supply Voltage  
Supply Voltage  
Input High Voltage  
Input Low Voltage  
V
V
V
V
0°C to +70°C  
-40°C to +85°C  
-55°C to +125°C  
2.0 Watt  
Industrial  
Storage Temperature  
Power Dissipation  
Output Current  
VIL  
20 mA  
* Stress greater than those listed under "Absolute Maximum Ratings" may cause  
permanent damage to the device. This is a stress rating only and functional  
operation of the device at these or any other conditions greater than those indicated  
in the operational sections of this specification is not implied. Exposure to absolute  
maximum rating conditions for extended periods may affect reliability.  
AC TEST CONDITIONS  
Input Pulse Levels  
VSS to 3.0V  
5ns  
Input Rise and Fall Times  
Input and Output Timing Levels  
Output Load  
1.5V  
1TTL, CL =35pF  
(Note: For tEHQZ, tGHQZ and tWLQZ, CL=5pF%  
TRUTH TABLE  
CAPACITANCE  
(f=1.0MHz, VIN=VCC or VSS  
%
G# E# W#  
Mode  
Standby  
Output Deselect  
Read  
Output  
High Z  
High Z  
DOUT  
Power  
CC2, ICC3  
Parameter  
Address Lines  
Data Lines  
Sym  
CI  
CD/Q  
CC  
Max  
12  
43  
10  
32  
Unit  
X
H
L
H
L
L
L
X
H
H
L
I
pF  
pF  
pF  
pF  
ICC1  
ICC1  
ICC1  
Chip Enable Line  
X
Write  
DIN  
Write and Output Enable Lines  
CW  
These parameters are sampled, not 100ꢀ tested.  
DC ELECTRICAL CHARACTERISTICS  
Parameter  
Sym  
ICC1  
ICC2  
ICC3  
ILI  
ILO  
VOH  
VOL  
Conditions  
Min  
2.4  
Typ*  
212  
35  
20  
Max  
120  
50  
12  
10  
10  
0.4  
Units  
mA  
mA  
mA  
µA  
µA  
V
Operating Power Supply Current  
Standby (TTL% Power Supply Current  
Full Standby Power Supply Current (CMOS%  
Input Leakage Current  
Output Leakage Current  
Output High Voltage  
W#, E# = VIL, II/O = 0mA, Min Cycle  
E > VIH, VIN < VIL, VIN > VIH  
E > VCC-0.2V, VIN > VCC-0.2V or VIN< 0.2V  
VIN = 0V to VCC  
V I/O = 0V to VCC  
IOH =-4.0mA  
Output Low Voltage  
IOL = 8.0mA  
V
*Typical: TA = 25°C, VCC = 5.0V  
July 2004  
Rev. 0  
2
White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com  
EDI8F81026C  
White Electronic Designs  
AC CHARACTERISTICS READ CYCLE  
Parameter  
Symbol  
20ns  
25ns  
35ns  
Units  
JEDEC  
Alt.  
tRC  
tAA  
tACS  
tCLZ  
tCHZ  
tOH  
tOE  
tLOZ  
tOHZ  
Min  
20  
Max  
Min  
25  
Max  
Min  
35  
Max  
Read Cycle Time  
Address Access Time  
Chip Enable Access Time  
Chip Enable to Output in Low Z (1%  
Chip Disable to Output in High Z (1%  
Output Hold from Address Change  
Output Enable to Output Valid  
Output Enable to Output in Low Z (1%  
Output Disable to Output in High Z(1%  
Note 1: Parameter guaranteed, but not tested  
tAVAV  
tAVQV  
tELQV  
tELQX  
tEHQZ  
tAVQX  
tGLQV  
tGLQX  
tGHQZ  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
20  
20  
25  
25  
35  
35  
3
3
3
3
3
3
3
3
3
10  
8
12  
10  
10  
15  
12  
12  
8
FIGURE 2 – READ CYCLE 1 - W# HIGH, G#, E# LOW  
tAVAV  
A
ADDRESS 1  
ADDRESS 2  
tAVQX  
tAVQV  
Q
DATA 2  
DATA 1  
FIGURE 3 – READ CYCLE 2 - W# HIGH  
tAVAV  
A
tAVQV  
tELQV  
E#  
tEHQZ  
tGHQZ  
tELQX  
G#  
Q
tGLQV  
tGLQX  
July 2004  
Rev. 0  
3
White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com  
EDI8F81026C  
White Electronic Designs  
AC CHARACTERISTICS WRITE CYCLE  
Parameter  
Symbol  
JEDEC  
20ns  
25ns  
35ns  
Units  
Alt.  
Min  
Max  
Min  
Max  
Min  
Max  
Write Cycle Time  
tAVAV  
tWC  
20  
25  
35  
ns  
Chip Enable to End of Write  
tELWH  
tELEH  
tAVWL  
tAVEL  
tAVWH  
tAVEH  
tWLWH  
tWLEH  
tWHAX  
tEHAX  
tWHDX  
tEHDX  
tCW  
15  
20  
30  
ns  
tCW  
15  
20  
30  
ns  
Address Setup Time  
Address Valid to End of Write  
Write Pulse Width  
tAS  
tAS  
tAW  
tAW  
tWP  
tWP  
tWR  
tWR  
0
0
15  
15  
15  
15  
0
0
0
0
15  
15  
20  
20  
0
0
0
0
20  
20  
25  
25  
0
0
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
Write Recovery Time  
Data Hold Time  
tDH  
tDH  
0
0
0
0
0
0
ns  
ns  
Write to Output in High Z (1%  
Data to Write Time  
tWLQZ  
tDVWH  
tDVEH  
tWHZ  
tDW  
tDW  
0
12  
12  
8
0
15  
15  
12  
0
20  
20  
15  
ns  
ns  
ns  
Output Active from End of Write (1%  
tWHQX  
tWLZ  
3
3
3
ns  
Note 1: Parameter guaranteed, but not tested.  
FIGURE 4 – WRITE CYCLE 1 - W# CONTROLLED  
tAVAV  
A
E#  
tELWH  
tAVWH  
tWHAX  
tWHDX  
tWLWH  
W#  
tAVWL  
tDVWH  
DATA VALID  
D
tWHQX  
tWLQZ  
HIGH Z  
Q
July 2004  
Rev. 0  
4
White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com  
EDI8F81026C  
White Electronic Designs  
FIGURE 5 – WRITE CYCLE 2 E# CONTROLLED  
tAVAV  
A
tAVEL  
tELEH  
E#  
tAVEH  
tEHAX  
tEHDX  
tWLEH  
W#  
tDVEH  
D
Q
DATA VALID  
HIGH Z  
ORDERING INFORMATION  
Standard Power  
EDI8F81026C20M6C  
EDI8F81026C85M6C  
EDI8F81026C35M6C  
Speed (ns)  
Package No.  
Height*  
20  
25  
35  
179  
179  
179  
7.37 (0.290"%  
7.37 (0.290"%  
7.37 (0.290"%  
Note: To order an Industrial grade product substitute the letter C in the Suffix with the letter I,  
eg. EDI8F81026C20M6C becomes EDI8F81026C20M6I.  
PACKAGE DESCRIPTION  
Package No. 179: 36 Pin Dual-in-line Package  
55.50  
(2.185% MAX.  
15.88  
(0.625%  
MAX.  
P1  
3.81  
(0.150%  
REF.  
7.34  
(0.290%  
MAX.  
15.75 (0.620%  
14.99 (0.590%  
2.54 (0.100% TYP.  
4.45 (0.175%  
3.18 (0.125%  
17 X 2.54 (0.100%  
43.18 (1.700% REF.  
* ALL DIMENSIONS ARE IN MILLIMETERS AND (INCHES%.  
July 2004  
Rev. 0  
5
White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com  
EDI8F81026C  
White Electronic Designs  
Document Title  
1M X 8 SRAM Module  
Revision History  
Rev #  
History  
Release Date Status  
Rev 0  
0.1 Updated datasheet format  
0.2 Added package height  
7-2004  
Final  
0.3 Added metric measurements  
0.4 Added new document title page  
July 2004  
Rev. 0  
6
White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com  

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