FF150R12KF2 [ETC]

TRANSISTOR | IGBT | N-CHAN | DUAL | 1.2KV V(BR)CES | 150A I(C) | M:HL093HW048 ; 晶体管| IGBT | N -CHAN |双| 1.2KV V（ BR ） CES | 150A I（C ） | M ： HL093HW048\n

FF150R12KF2


型号：	FF150R12KF2
厂家：	ETC
描述：	TRANSISTOR \| IGBT \| N-CHAN \| DUAL \| 1.2KV V(BR)CES \| 150A I(C) \| M:HL093HW048 晶体管\| IGBT \| N -CHAN \|双\| 1.2KV V（ BR ） CES \| 150A I（C ） \| M ： HL093HW048\n 晶体晶体管双极性晶体管局域网
文件：	总2页 (文件大小：99K)
下载：	下载PDF数据表文档文件

FF150R12KL

TRANSISTOR | IGBT | N-CHAN | DUAL | 1.2KV V(BR)CES | 150A I(C) | M:HL093HW048

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23 ETC

FF150R12KS4

62mm C-series module with the fast IGBT2 for high-frequency switching

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346 EUPEC

FF150R12KS4

62mm C-Series module with the fast IGBT2 for high-frequency switching

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193 INFINEON

FF150R12KS4_B2

62mm C-Series module with the fast IGBT2 for high-frequency switching

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17 INFINEON

FF150R12KS4_B2

IGBT

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2 INFINEON

FF150R12KS4B2HOSA1

Insulated Gate Bipolar Transistor

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0 INFINEON

FF150R12KT3G

Insulated Gate Bipolar Transistor, 225A I(C), 1200V V(BR)CES, N-Channel, MODULE-7

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24 INFINEON

FF150R12KT3GHOSA1

Insulated Gate Bipolar Transistor, 225A I(C), 1200V V(BR)CES, N-Channel, MODULE-7

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1 INFINEON

FF150R12ME3G

EconoDUAL module with trench/fieldstop IGBT3 and EmCon High Efficiency diode

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54 INFINEON

FF150R12MS4G

EconoDUAL3 module with fast IGBT2 for high switching frequency

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41 INFINEON

FF150R12MS4GBOSA1

Insulated Gate Bipolar Transistor, 225A I(C), 1200V V(BR)CES, N-Channel, MODULE-11

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0 INFINEON

FF150R12MS4GENG

Insulated Gate Bipolar Transistor,

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0 INFINEON

FF150R12MT4

EconoDUAL?2 Modul mit schnellem Trench/Feldstopp IGBT4 und Emitter Controlled 4 Diode und NTC

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38 INFINEON

FF150R12MT4BOMA1

Insulated Gate Bipolar Transistor, 200A I(C), 1200V V(BR)CES, N-Channel, MODULE-10

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0 INFINEON

FF150R12RT4

34mm Module with fast Trench/Feldstopp IGBT4 and Emitter Controlled 4 diode

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204 INFINEON

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