FS0204BN00RB [ETC]
SURFACE MOUNT SCR; 表面安装SCR型号: | FS0204BN00RB |
厂家: | ETC |
描述: | SURFACE MOUNT SCR |
文件: | 总4页 (文件大小:123K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
FS02...N
SURFACE MOUNT SCR
SOT223
(Plastic)
On-State Current
1.25 Amp
Gate Trigger Current
< 200 µA
Off-State Voltage
200 V ÷ 800 V
These series of Silicon Controlled
Rectifier use a high performance
PNPN technology.
These parts are intended for general
purpose applications where high gate
sensitivity is required using surface mount
technology.
Absolute Maximum Ratings, according to IEC publication No. 134
SYMBOL
PARAMETER
On-state Current*
CONDITIONS
Min.
Max.
Unit
Half Cycle, Q = 180 º, Ttab = 95 ºC
Half Cycle, Q = 180 º, Ttab = 95 ºC
1.25
0.8
25
A
A
IT(RMS)
IT(AV)
Average On-state Current*
Non-repetitive On-State Current
Non-repetitive On-State Current
Fusing Current
Half Cycle, 60 Hz, T
Half Cycle, 50 Hz, T
tp = 10ms, Half Cycle
GR = 10 µA, T = 25 ºC
j
= 25 ºC
A
ITSM
ITSM
I2t
VGRM
IGM
PGM
PG(AV)
Tj
22.5
2.5
8
A
A2s
j
= 25 ºC
Peak Reverse Gate Voltage
Peak Gate Current
V
I
j
1.2
3
A
20 µs max.
20 µs max.
20 ms max.
Peak Gate Dissipation
Gate Dissipation
W
W
ºC
ºC
ºC
0.2
Operating Temperature
Storage Temperature
-40
-40
+125
+150
260
Tstg
Tsld
Soldering Temperature
10s max.
* with 5 cm2 copper (e= 35mm) surface under tab.
SYMBOL
PARAMETER
CONDITIONS
VOLTAGE
Unit
V
B
D
M
N
RGK = 1 KW
Repetitive Peak Off State
Voltage
VDRM
VRRM
200 400 600 800
Jun - 02
FS02...N
SURFACE MOUNT SCR
Electrical Characteristics
Unit
SYMBOL
PARAMETER
CONDITIONS
SENSITIVITY
01 04 02
15
03
20
MIN
µA
µA
1
IGT
Gate Trigger Current
VD = 12 VDC , RL = 140W, Tj = 25 ºC
MAX
20 50 200 200
VD = VDRM , RGK = 1KW, Tj = 125 ºC MAX
VR = VRRM
at IT = 1.6 Amp, tp = 380 µs, Tj = 25 ºC MAX
500
5
IDRM / IRRM
Off-State Leakage Current
,
Tj = 25 ºC
MAX
V
V
1.45
0.9
150
0.8
0.1
VTM
VT(O)
rd
VGT
VGD
On-state Voltage
Tj = 125 ºC
On-state Threshold Voltage
Dinamic Resistance
MAX
MAX
MAX
MIN
mW
V
Tj = 125 ºC
VD = 12 VDC , RL = 140W, Tj = 25 ºC
Gate Trigger Voltage
Gate Non Trigger Voltage
VD = VDRM , RL = 3.3KW,
RGK = 1KW,
V
Tj = 125 ºC
Holding Current
Latching Current
mA
mA
MAX
MAX
MIN
IH
IL
IT = 50 mA , RGK = 1KW, Tj = 25 ºC
IG = 1 mA, RGK = 1KW, Tj = 25 ºC
5
6
V/µs
VD = 0.67 x VDRM , RGK = 1KW,
Tj = 125 ºC
dv / dt
Critical Rate of Voltage
Rise
15
15
10
20
IG = 2 x IGT Tr £ 100 ns, F = 60 Hz,
MIN
A/µs
Critical Rate of Current Rise
di / dt
50
Tj = 125 ºC
25
60
ºC/W
ºC/W
Rth(j-l)
Rth(j-a)
Thermal Resistance
Junction-Leads for DC
Thermal Resistance
Junction-Ambient
PART NUMBER INFORMATION
F
S
02
01
B
N
00 RB
FAGOR
SCR
PACKAGING
FORMING
CASE
VOLTAGE
SENSITIVITY
CURRENT
Jun - 02
FS02...N
SURFACE MOUNT SCR
Fig. 1: Maximum average power dissipation
versus average on-state current
Fig. 2: Correlation between maximum
average power dissipation and maximum
allowable temperature (Tamb and T tab).
P (W)
1.4
P (W)
T tab (ºC)
-85
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
360 º
Rth (j-l)
1.2
a
DC
-95
1.0
Rth (j-a)
a = 180 º
0.8
-105
-115
-125
a = 120 º
0.6
a = 90 º
0.4
a = 60 º
0.2
a = 30 º
I
(A)
T(AV)
Tamb (ºC)
0.0
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4
0
20 40 60 80 100 120 140
Fig. 3: Average on-state current versus tab
temperature
Fig. 4: Relative variation of thermal impedance
junction to ambient versus pulse duration.
I
(A)
Zth(j-a) / Rth(j-a)
T(AV)
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
1.00
DC
0.10
a = 180 º
Standard foot print,
e (Cu) = 35 µm
T lead (ºC)
0.01
tp (s)
0
10 20 30 40 50 60 70 80 90 100 110 120 130
1E-3
1E-2
1E-1
1E+0 1E+1 1E+2 5E+2
Fig. 5: Relative variation of gate trigger current
and holding current versus junction temperature.
Fig. 6: Non repetitive surge peak on-state
current versus number of cycles.
Igt (Tj)
Ih (Tj)
I
(A)
TSM
Igt (Tj = 25 ºC)
Ih (Tj = 25 ºC)
10.0
9.0
8.0
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0.0
25
20
15
10
5
Tj initial = 25 ºC
Igt
Ih
0
Number of cycles
Tj (ºC)
-40 -20
0
20 40 60 80 100 120 140
1
10
100
1000
Jun - 02
FS02...N
SURFACE MOUNT SCR
Fig. 7: Non repetitive surge peak on-state
current for a sinusoidal pulse with width:
tp £ 10 ms, and corresponding value of I2t.
Fig. 8: On-state characteristics (maximum
values).
I
(A). I2t (A2s)
I
(A)
TM
TSM
100
10
1
100
10
1
Tj initial = 25 ºC
Tj initial
25 ºC
I
TSM
Tj max
I2
t
Tj max
Vto = 1.05 V
Rt = 0.150 W
V
(V)
TM
tp(ms)
0.1
1
10
0
0.5
1
1.5
2
2.5
3
3.5 4 4.5
PACKAGE MECHANICAL DATA
SOT223 (Plastic)
A
B
DIMENSIONS
16º max. (4x)
C
REF.
Milimeters
Typ.
6.50
10º max.
K
Min.
6.30
6.70
3.30
-
Max.
6.70
7.30
3.70
-
H
A
B
C
D
E
F
G
H
I
J
E
I
7.00
3.50
4.60
2.30
3.00
0.70
1.60
0.60
D
F
-
-
2.95
0.65
1.50
0.50
-
3.15
0.85
1.70
0.70
0.05
0.35
0.02
0.30
J
K
G
0.25
Weight: 0.11 g
FOOT PRINT
3.3
1.5
6.4
(3x) 1
2.3
1.5
4.6
Jun - 02
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