首页 |元器件品牌

FS1208MH [ETC]

Standard Gate SCRs ; 标准门可控硅\n
FS1208MH
型号： FS1208MH
厂家： ETC    ETC
描述：

Standard Gate SCRs
标准门可控硅\n

可控硅 栅
文件： 总4页 (文件大小：133K)
中文：  中文翻译
下载：  下载PDF数据表文档文件
 查看货源
FS12...H  
STANDARD SCR  
TO220-AB  
On-State Current  
Gate Trigger Current  
12 Amp  
> 0.5 mA to < 25 mA  
Off-State Voltage  
200 V ÷ 600 V  
These series of Silicon Controlled  
Rectifier use a high performance  
PNPN technology.  
K
These parts are intended for general  
purpose high current applications where  
moderate gate insensitivity is required.  
A
G
Absolute Maximum Ratings, according to IEC publication No. 134  
SYMBOL  
PARAMETER  
On-state Current  
CONDITIONS  
Min.  
Max.  
Unit  
180º Conduction Angle, Tc = 110 ºC  
Half Cycle, Q = 180 º, TC = 110 ºC  
Half Cycle, 60 Hz  
12  
8
A
A
IT(RMS)  
Average On-state Current  
Non-repetitive On-State Current  
Non-repetitive On-State Current  
Fusing Current  
IT(AV)  
ITSM  
ITSM  
I2t  
154  
140  
98  
A
Half Cycle, 50 Hz  
A
A2s  
tp = 10ms, Half Cycle  
VGRM  
IGM  
PGM  
PG(AV)  
Tj  
Peak Reverse Gate Voltage  
Peak Gate Current  
I
GR = 10 µA  
8
V
20 µs max.  
20 µs max.  
20ms max.  
4
A
Peak Gate Dissipation  
Gate Dissipation  
10  
W
W
ºC  
ºC  
ºC  
1
Operating Temperature  
Storage Temperature  
-40  
-40  
+125  
+150  
260  
Tstg  
Tsld  
Soldering Temperature  
10s max.  
SYMBOL  
PARAMETER  
CONDITIONS  
VOLTAGE  
Unit  
V
B
D
M
RGK = 1 KW  
Repetitive Peak Off State  
Voltage  
200  
400  
600  
VDRM  
VRRM  
Dec - 02  
FS12...H  
STANDARD SCR  
Electrical Characteristics  
Unit  
SYMBOL  
PARAMETER  
CONDITIONS  
SENSITIVITY  
09  
2
08  
0.5  
5
10  
MIN  
mA  
2
IGT  
Gate Trigger Current  
VD = 12 VDC , RL = 33W. Tj = 25 ºC  
MAX  
15  
2
25  
mA  
µA  
V
IDRM / IRRM  
VD = VDRM , RGK = 220W Tj = 125 ºC MAX  
VR = VRRM  
at IT = 24 Amp, tp = 380 µs, Tj = 25 ºC MAX  
Off-State Leakage Current  
,
Tj = 25 ºC  
5
MAX  
1.6  
1.3  
0.2  
VTM  
VGT  
VGD  
On-state Voltage  
V
VD = 12 VDC , RL = 33W, Tj = 25 ºC  
VD = VDRM , RL = 3.3KW, RGK = 220W,  
Tj = 125 ºC  
Gate Trigger Voltage  
Gate Non Trigger Voltage  
MAX  
MIN  
V
IH  
Holding Current  
Latching Current  
IT = 500 mA, Gate open  
IG = 1.2 IGT  
MAX  
15  
30  
40  
mA  
IL  
MAX  
MIN  
30  
50  
60  
200  
60  
250  
mA  
V/µs  
dv / dt  
Critical Rate of Voltage Rise VD = 0.67 x VDRM  
IG = 2 x IGT  
,
Gate open  
50  
1.3  
60  
A/µs  
ºC/W  
ºC/W  
Critical Rate of Current Rise  
Tr £ 100 ns, F = 60 Hz,  
di / dt  
MIN  
Tj = 125 ºC  
Thermal Resistance  
Junction-Case for DC  
Rth(j-c)  
Rth(j-a)  
Thermal Resistance  
Junction-Amb (S = 0.5 cm )  
2
V
0.85  
30  
Tj = 125 ºC  
Tj = 125 ºC  
Threshold Voltage  
Dynamic resistance  
MAX  
MAX  
Vt0  
Rd  
mW  
PART NUMBER INFORMATION  
F
S
12  
09  
B
H
00 TU  
FAGOR  
SCR  
PACKAGING  
FORMING  
CASE  
VOLTAGE  
SENSITIVITY  
CURRENT  
Dec - 02  
FS12...H  
STANDARD SCR  
Fig. 1: Maximum average power dissipation  
versus average on-state current.  
Fig. 2: Average and D.C. on-state current  
versus case temperature.  
I
(A)  
T(av)  
P (W)  
16  
14  
13  
12  
11  
10  
9
14  
12  
10  
8
8
7
6
5
6
4
3
4
2
2
1
0
I
(A)  
T(av)  
Tc (ºC)  
0
0
1 2 3 4 5 6 7 8 9 10  
0
25  
50  
75  
100  
125  
Fig. 3: Relative variation of thermal impedance  
junction to case versus pulse duration.  
Fig. 4: Relative variation of gate trigger  
current and holding current versus junction  
temperature.  
K = [Zth(j-c) / Rth (j-c)]  
1.0  
I
, I (Tj) / I , I (Tj = 25 ºC)  
GT GT  
H
H
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0.0  
IGT  
0.5  
0.2  
IH  
tp (s)  
Tj (ºC)  
0.1  
1E-3  
1E-2  
1E-1  
1E+0  
-40 -20  
0
20 40 60 80 100 120 140  
Fig. 7: Non repetitive surge peak on-state  
current for a sinusoidal pulse with width:  
tp < 10 ms, and corresponding value of I2t.  
Fig. 5: Non repetitive surge peak on-state  
current versus number of cycles.  
I
(A)  
I
(A). I2t (A2s)  
TSM  
TSM  
160  
140  
120  
100  
80  
Tj initial = 25 ºC  
Tj initial = 25 ºC  
F = 50 Hz  
1000  
100  
10  
I
TSM  
I2  
t
60  
40  
20  
tp(ms)  
Number of cycles  
0
1
10  
100  
1000  
1
10  
Dec - 02  
FS12...H  
STANDARD SCR  
Fig. 8: On-state characteristics (maximum  
values).  
I
(A)  
TM  
100.0  
10.0  
Tj =Tj max.  
Tj = 25 ºC  
1.0  
0.1  
Tj max  
Vto = 0.85V  
Rt = 46 mW  
V
(V)  
TM  
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0  
TO-220AB  
PACKAGE MECHANICAL DATA  
DIMENSIONS  
Milimeters  
REF.  
c
B
b2  
Min.  
Nominal  
Max.  
A
a1  
a2  
B
b1  
b2  
C
c1  
c2  
e
F
I
I4  
L
I2  
I3  
M
15.20  
15.90  
L
3.75  
F
13.00  
10.00  
0.61  
1.23  
4.40  
0.49  
2.40  
2.40  
6.20  
3.75  
15.80  
2.65  
1.14  
1.14  
14.00  
10.40  
0.88  
1.32  
4.60  
0.70  
2.72  
2.70  
6.60  
3.85  
16.80  
2.95  
1.70  
1.70  
øI  
A
14  
c2  
a1  
13  
12  
a2  
16.40  
2.60  
b1  
M
c1  
e
Dec - 02  

相关型号：

FS1209BH

 Standard Gate SCRs
ETC

FS1209DH

 Standard Gate SCRs
ETC

FS1209MH

 Standard Gate SCRs
ETC

FS1210BH

 Standard Gate SCRs
ETC

FS1210DH

 Standard Gate SCRs
ETC

FS1210MH

 Standard Gate SCRs
ETC

FS126

 RELAY TIME DELAY 75FPM CHASSIS
LITTELFUSE

FS126-45

 AC LOW COST FLASHER
LITTELFUSE

FS126-60

 AC LOW COST FLASHER
LITTELFUSE

FS126RC

 RELAY TIME DELAY 75FPM CHASSIS
LITTELFUSE

FS126RC-45

 AC LOW COST FLASHER
LITTELFUSE

FS127

 RELAY TIME DELAY 75FPM CHASSIS
LITTELFUSE
©2020 ICPDF网 联系我们和版权申明