FSYE33A0D1 [ETC]
TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 5A I(D) | SMT ; 晶体管| MOSFET | N沟道| 400V V（ BR ） DSS | 5A I（ D） | SMT\n
| 型号： | FSYE33A0D1 |
| 厂家： | 
ETC |
| 描述： | TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 5A I(D) | SMT
|
| 文件： | 总8页 (文件大小：61K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
FSYE33A0D, FSYE33A0R
TM
Data Sheet
September 2000
File Number 4908
Radiation Hardened, SEGR Resistant
N-Channel Power MOSFETs
Features
• 5A, 400V, r
= 1.2Ω
DS(ON)
The Discrete Products Operation of Intersil has developed a
series of Radiation Hardened MOSFETs specifically
designed for commercial and military space applications.
Enhanced Power MOSFET immunity to Single Event Effects
(SEE), Single Event Gate Rupture (SEGR) in particular, is
combined with 100 krads of total dose hardness to provide
devices which are ideally suited to harsh space
• Total Dose
- Meets Pre-RAD Specifications to 100 krad(Si)
• Single Event
- Safe Operating Area Curve for Single Event Effects
2
- SEE Immunity for LET of 36MeV/mg/cm with
V
V
up to 80% of Rated Breakdown and
of 10V Off-Bias
DS
GS
environments. The dose rate and neutron tolerance
necessary for military applications have not been sacrificed.
• Dose Rate
- Typically Survives 3E9 rad (Si)/s at 80% BV
The Intersil portfolio of SEGR resistant radiation hardened
MOSFETs includes N-Channel and P-Channel devices in a
variety of voltage, current and on-resistance ratings.
Numerous packaging options are also available.
DSS
- Typically Survives 2E12 if Current Limited to I
DM
• Photo Current
- 6nA Per-rad(Si)/s Typically
This MOSFET is an enhancement-mode silicon-gate power
field-effect transistor of the vertical DMOS (VDMOS)
structure. It is specially designed and processed to be
radiation tolerant. The MOSFET is well suited for
applications exposed to radiation environments such as
switching regulation, switching converters, motor drives,
relay drivers and drivers for high-power bipolar switching
transistors requiring high speed and low gate drive power.
This type can be operated directly from integrated circuits.
• Neutron
- Maintain Pre-RAD Specifications
for 3E12 Neutrons/cm
2
2
- Usable to 3E13 Neutrons/cm
Symbol
D
G
Reliability screening is available as either commercial, TXV
equivalent of MIL-PRF-19500, or Space equivalent of
MIL-PRF-19500. Contact Intersil for any desired deviations
from the data sheet.
S
Formerly available as type TA17699W.
Packaging
SMD.5
Ordering Information
RAD LEVEL SCREENING LEVEL PART NUMBER/BRAND
10K
Commercial
TXV
FSYE33A0D1
FSYE33A0R3
FSYE33A0R4
100K
100K
Space
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Intersil and Design is a trademark of Intersil Corporation. | Copyright © Intersil Corporation 2000
1
FSYE33A0D, FSYE33A0R
o
Absolute Maximum Ratings T = 25 C, Unless Otherwise Specified
C
FSYE33A0D, FSYE33A0R
UNITS
Drain to Source Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
400
400
V
V
DS
Drain to Gate Voltage (R
GS
= 20kΩ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DGR
Continuous Drain Current
o
T
T
= 25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
5
3
A
A
A
V
C
D
D
o
= 100 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
15
±20
DM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
GS
Maximum Power Dissipation
o
T
T
= 25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
75
30
W
W
C
T
o
= 100 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
C
T
o
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Single Pulsed Avalanche Current, L = 100µH (See Test Figure). . . . . . . . . . . . . . . . . . . . . . . . . I
0.60
15
W/ C
A
A
A
AS
Continuous Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
5
S
Pulsed Source Current (Body Diode). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
15
SM
o
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T , T
-55 to 150
300
C
J
STG
o
Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
(Distance >0.063in (1.6mm) from Case, 10s Max)
C
L
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
o
Electrical Specifications
T
= 25 C, Unless Otherwise Specified
C
PARAMETER
SYMBOL
BV
TEST CONDITIONS
= 1mA, V = 0V
MIN
TYP
MAX
-
UNITS
V
Drain to Source Breakdown Voltage
Gate Threshold Voltage
I
400
-
DSS
D
GS
o
V
V
= V
DS
,
T
T
T
T
T
T
T
= -55 C
-
-
5.0
4.0
-
V
GS(TH)
GS
= 1mA
C
C
C
C
C
C
C
I
o
D
= 25 C
1.5
-
V
o
= 125 C
0.5
-
-
V
o
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
I
V
V
= 320V,
= 0V
= 25 C
-
-
25
250
100
200
6.6
1.2
2.4
20
25
55
25
-
µA
µA
nA
nA
V
DSS
DS
GS
o
= 125 C
-
o
I
V
= ±20V
= 25 C
-
-
GSS
GS
o
= 125 C
-
-
Drain to Source On-State Voltage
Drain to Source On Resistance
V
V
= 12V, I = 5A
-
-
DS(ON)
GS
D
o
r
I
= 3A,
T
T
= 25 C
-
1.0
-
Ω
DS(ON)12
D
C
V
= 12V
o
GS
= 125 C
-
Ω
C
Turn-On Delay Time
Rise Time
t
V
R
R
= 200V, I = 5A,
-
-
ns
ns
ns
ns
nC
nC
nC
nC
nC
V
d(ON)
DD
D
= 40Ω, V = 12V,
L
GS
t
-
-
r
= 7.5Ω
GS
Turn-Off Delay Time
Fall Time
t
-
-
d(OFF)
t
-
-
f
Total Gate Charge
Gate Charge at 12V
Threshold Gate Charge
Gate Charge Source
Gate Charge Drain
Plateau Voltage
Q
V
= 0V to 20V
= 0V to 12V
= 0V to 2V
V
= 200V,
-
55
33
2
g(TOT)
GS
DD
= 5A
I
D
Q
V
-
36
-
g(12)
g(TH)
GS
Q
V
-
GS
Q
-
5
7
gs
gd
Q
-
15
6
18
-
V
I
= 5A, V
= 15V
-
(PLATEAU)
D
DS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
C
V
= 25V, V = 0V,
GS
-
750
105
26
-
-
pF
pF
pF
ISS
DS
f = 1MHz
C
C
-
-
OSS
-
-
RSS
o
Thermal Resistance Junction to Case
R
-
1.67
C/W
JC
θ
2
FSYE33A0D, FSYE33A0R
Source to Drain Diode Specifications
PARAMETER
Forward Voltage
Reverse Recovery Time
SYMBOL
TEST CONDITIONS
MIN
0.6
-
TYP
MAX
1.8
UNITS
V
V
I
I
= 5A
-
-
SD
SD
t
= 5A, dI /dt = 100A/µs
520
ns
rr
SD
SD
o
Electrical Specifications up to 100 krad T = 25 C, Unless Otherwise Specified
C
PARAMETER
Drain to Source Breakdown Volts
Gate to Source Threshold Volts
Gate to Body Leakage
SYMBOL
BV
TEST CONDITIONS
= 0, I = 1mA
MIN
MAX
-
UNITS
(Note 3)
V
400
V
V
DSS
GS
D
(Note 3)
V
V
= V , I = 1mA
DS
1.5
4.0
100
25
GS(TH)
GS
D
(Notes 2, 3)
(Note 3)
I
V
= ±20V, V
= 0V
= 320V
-
-
-
-
nA
µA
V
GSS
GS DS
Zero Gate Leakage
I
V
= 0, V
DSS
GS
DS
= 12V, I = 5A
Drain to Source On-State Volts
Drain to Source On Resistance
NOTES:
(Notes 1, 3)
(Notes 1, 3)
V
V
6.6
1.2
DS(ON)
GS
D
r
V
= 12V, I = 3A
Ω
DS(ON)12
GS
D
1. Pulse test, 300µs Max.
2. Absolute value.
3. Insitu Gamma bias must be sampled for both V
GS
= 12V, V
DS
= 0V and V
GS
= 0V, V
= 80% BV .
DSS
DS
Single Event Effects (SEB, SEGR) Note 4
ENVIRONMENT (NOTE 5)
APPLIED
(NOTE 6)
ION
SPECIES
TYPICAL LET
(MeV/mg/cm)
TYPICAL
RANGE (µ)
V
BIAS
MAXIMUM
GS
(V)
TEST
SYMBOL
SEESOA
V
BIAS (V)
DS
Single Event Effects Safe Operating Area
Ni
Ni
Br
Br
Br
Br
26
26
37
37
37
37
43
43
36
36
36
36
-15
-20
-5
400
360
400
-10
-15
-20
320
200
80
NOTES:
4. Testing conducted at Brookhaven National Labs; sponsored by Naval Surface Warfare Center (NSWC), Crane, IN.
2
o
5. Fluence = 1E5 ions/cm (typical), T = 25 C.
6. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR).
Performance Curves Unless Otherwise Specified
2
LET = 26MeV/mg/cm , RANGE = 43µ
2
1E-3
1E-4
LET = 37MeV/mg/cm , RANGE = 36µ
500
400
300
200
100
0
2
FLUENCE = 1E5 IONS/cm (TYPICAL)
ILM = 10A
30A
1E-5
1E-6
1E-7
100A
300A
o
TEMP = 25 C
10
30
100
DRAIN SUPPLY (V)
300
1000
0
-5
-10
-15
(V)
-20
-25
V
GS
FIGURE 2. TYPICAL DRAIN INDUCTANCE REQUIRED TO
LIMIT GAMMA DOT CURRENT TO I
FIGURE 1. SINGLE EVENT EFFECTS SAFE OPERATING AREA
AS
3
FSYE33A0D, FSYE33A0R
Performance Curves Unless Otherwise Specified (Continued)
7
6
5
4
3
2
100
10
1
o
T
= 25 C
C
100µs
1ms
OPERATION IN THIS
AREA MAY BE
1
0
10ms
LIMITED BY r
DS(ON)
0.1
1
10
100
1000
-50
0
T
50
100
150
o
, CASE TEMPERATURE ( C)
V
, DRAIN TO SOURCE VOLTAGE (V)
C
DS
FIGURE 3. MAXIMUM CONTINUOUS DRAIN CURRENT vs
TEMPERATURE
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
2.5
PULSE DURATION = 250ms, V
GS
= 12V, I = 3A
D
2.0
1.5
1.0
0.5
0.0
12V
Q
G
Q
Q
GD
GS
V
G
-80
-40
0
40
80
120
160
o
T , JUNCTION TEMPERATURE ( C)
CHARGE
J
FIGURE 5. BASIC GATE CHARGE WAVEFORM
10
FIGURE 6. TYPICAL NORMALIZED r
vs JUNCTION
DS(ON)
TEMPERATURE
1
0.5
0.2
0.1
0.1
0.05
0.02
0.01
P
DM
SINGLE PULSE
0.01
NOTES:
DUTY FACTOR: D = t /t
t
t
1
2
1
2
+ T
PEAK T = P
x Z
J
DM
JC
C
θ
0.001
-5
10
-4
-3
10
-2
-1
0
1
10
10
10
10
10
t, RECTANGULAR PULSE DURATION (s)
FIGURE 7. NORMALIZED MAXIMUM TRANSIENT THERMAL RESPONSE
4
FSYE33A0D, FSYE33A0R
Performance Curves Unless Otherwise Specified (Continued)
100
10
1
o
STARTING T = 25 C
J
o
STARTING T = 150 C
J
IF R = 0
= (L) (I ) / (1.3 RATED BV
t
- V
DD
)
AV
AS
DSS
IF R ≠ 0
t
= (L/R) ln [(I *R) / (1.3 RATED BV
- V ) + 1]
DD
AV
AS
DSS
0.1
0.01
0.1
1
10
t
, TIME IN AVALANCHE (ms)
AV
FIGURE 8. UNCLAMPED INDUCTIVE SWITCHING
Test Circuits and Waveforms
ELECTRONIC SWITCH OPENS
WHEN I IS REACHED
AS
V
DS
L
BV
DSS
+
I
-
CURRENT
TRANSFORMER
AS
t
P
V
DS
I
AS
V
VARY t TO OBTAIN
DD
P
+
50Ω
REQUIRED PEAK I
AS
V
DD
V
≤ 20V
GS
-
50V-150V
DUT
50Ω
t
P
0V
t
AV
FIGURE 9. UNCLAMPED ENERGY TEST CIRCUIT
FIGURE 10. UNCLAMPED ENERGY WAVEFORMS
t
t
ON
OFF
t
d(OFF)
V
DD
t
d(ON)
t
t
f
r
R
L
V
DS
90%
90%
V
DS
V
= 12V
GS
10%
10%
DUT
0V
90%
50%
R
GS
50%
V
GS
PULSE WIDTH
10%
FIGURE 11. RESISTIVE SWITCHING TEST CIRCUIT
FIGURE 12. RESISTIVE SWITCHING WAVEFORMS
5
FSYE33A0D, FSYE33A0R
Screening Information
Screening is performed in accordance with the latest revision in effect of MIL-PRF-19500, (Screening Information Table).
o
Delta Tests and Limits (JANTXV Equivalent, JANS Equivalent) T = 25 C, Unless Otherwise Specified
C
PARAMETER
Gate to Source Leakage Current
Zero Gate Voltage Drain Current
Drain to Source On Resistance
Gate Threshold Voltage
NOTES:
SYMBOL
TEST CONDITIONS
= ±20V
GS
MAX
UNITS
nA
I
V
±20 (Note 7)
±25 (Note 7)
±20% (Note 8)
±20% (Note 8)
GSS
I
V
= 80% Rated Value
o
µA
DSS
DS
r
T
= 25 C at Rated I
D
Ω
DS(ON)
C
V
I
= 1.0mA
V
GS(TH)
D
7. Or 100% of Initial Reading (whichever is greater).
8. Of Initial Reading.
Screening Information
TEST
JANTXV EQUIVALENT
JANS EQUIVALENT
= 15V, L = 0.1mH; Limit = 15A
Unclamped Inductive Switching
Thermal Response
Gate Stress
V
= 15V, L = 0.1mH; Limit = 15A
V
GS(PEAK)
GS(PEAK)
t
= 10ms; V = 25V; I = 1A; LIMIT = 74mV
t
= 10ms; V = 25V; I = 1A; LIMIT = 74mV
H
H
H
H
H
H
V
= 30V, t = 250µs
V
= 30V, t = 250µs
GS
GS
Pind
Optional
Required
MIL-PRF-19500 Group A,
Pre Burn-In Tests (Note 9)
MIL-PRF-19500 Group A,
Subgroup 2 (All Static Tests at 25 C)
o
o
Subgroup 2 (All Static Tests at 25 C)
Steady State Gate
Bias (Gate Stress)
MIL-PRF-750, Method 1042, Condition B
MIL-PRF-750, Method 1042, Condition B
V
= 80% of Rated Value,
V
= 80% of Rated Value,
GS
GS
o
o
T = 150 C, Time = 48 hours
T = 150 C, Time = 48 hours
A
A
Interim Electrical Tests (Note 9)
All Delta Parameters Listed in the Delta Tests
and Limits Table
All Delta Parameters Listed in the Delta Tests
and Limits Table
Steady State Reverse
Bias (Drain Stress)
MIL-PRF-750, Method 1042, Condition A
MIL-PRF-750, Method 1042, Condition A
V
= 80% of Rated Value,
V
= 80% of Rated Value,
DS
DS
o
o
T = 150 C, Time = 160 hours
T = 150 C, Time = 240 hours
A
A
PDA
10%
5%
Final Electrical Tests (Note 9)
MIL-PRF-19500, Group A, Subgroup 2
MIL-PRF-19500, Group A,
Subgroups 2 and 3
NOTE:
9. Test limits are identical pre and post burn-in.
Additional Tests
PARAMETER
Safe Operating Area
Thermal Impedance
SYMBOL
TEST CONDITIONS
= 200V, t = 10ms
MAX
0.43
165
UNITS
A
SOA
V
DS
= 100ms; V = 25V; I = 1A
∆V
SD
t
mV
H
H
H
6
FSYE33A0D, FSYE33A0R
Rad Hard Data Packages - Intersil Power Transistors
TXV Equivalent
Class S - Equivalents
1. RAD HARD TXV EQUIVALENT - STANDARD DATA
PACKAGE
1. RAD HARD “S” EQUIVALENT - STANDARD DATA
PACKAGE
A. Certificate of Compliance
A. Certificate of Compliance
B. Serialization Records
C. Assembly Flow Chart
D. SEM Photos and Report
B. Assembly Flow Chart
C. Preconditioning - Attributes Data Sheet
D. Group A
E. Group B
F. Group C
G. Group D
- Attributes Data Sheet
- Attributes Data Sheet
- Attributes Data Sheet
- Attributes Data Sheet
E. Preconditioning - Attributes Data Sheet
- HTRB - Hi Temp Gate Stress Post
Reverse Bias Data and Delta Data
- HTRB - Hi Temp Drain Stress Post
Reverse Bias Delta Data
2. RAD HARD TXV EQUIVALENT - OPTIONAL DATA
PACKAGE
F. Group A
G. Group B
H. Group C
I. Group D
- Attributes Data Sheet
- Attributes Data Sheet
- Attributes Data Sheet
- Attributes Data Sheet
A. Certificate of Compliance
B. Assembly Flow Chart
C. Preconditioning - Attributes Data Sheet
- Pre and Post Burn-In Read and Record
Data
2. RAD HARD MAX. “S” EQUIVALENT - OPTIONAL
DATA PACKAGE
D. Group A
E. Group B
- Attributes Data Sheet
A. Certificate of Compliance
B. Serialization Records
C. Assembly Flow Chart
D. SEM Photos and Report
- Attributes Data Sheet
- Pre and Post Read and Record Data for
Intermittent Operating Life (Subgroup B3)
- Bond Strength Data (Subgroup B3)
- Pre and Post High Temperature Operating
Life Read and Record Data (Subgroup B6)
E. Preconditioning - Attributes Data Sheet
- HTRB - Hi Temp Gate Stress Post
Reverse Bias Data and Delta Data
- HTRB - Hi Temp Drain Stress Post
Reverse Bias Delta Data
F. Group C
G. Group D
- Attributes Data Sheet
- Pre and Post Read and Record Data for
Intermittent Operating Life (Subgroup C6)
- Bond Strength Data (Subgroup C6)
- X-Ray and X-Ray Report
- Attributes Data Sheet
F. Group A
G. Group B
H. Group C
I. Group D
- Attributes Data Sheet
- Subgroups A2, A3, A4, A5 and A7 Data
- Pre and Post RAD Read and Record Data
- Attributes Data Sheet
- Subgroups B1, B3, B4, B5 and B6 Data
- Attributes Data Sheet
- Subgroups C1, C2, C3 and C6 Data
- Attributes Data Sheet
- Pre and Post Radiation Data
7
FSYE33A0D, FSYE33A0R
SMD.5
3 PAD CERAMIC LEADLESS CHIP CARRIER
INCHES
MIN
MILLIMETERS
E
SYMBOL
MAX
0.124
0.100
0.301
0.291
0.080
0.405
0.230
0.125
MIN
2.84
2.28
7.39
7.13
1.78
10.03
5.58
2.92
MAX
3.15
2.54
7.64
7.39
2.03
10.28
5.84
3.17
NOTES
A
b
0.112
0.090
0.291
0.281
0.070
0.395
0.220
0.115
3
-
-
-
-
-
-
-
D
D
D
1
2
D
E
E
E
1
2
NOTES:
1. No current JEDEC outline for this package.
2. Controlling dimension: Inch.
A
3. Measurement prior to pre-solder coating the mounting pads.
4. Revision 4dated 5-00.
E
E
2
1
2
D
2
3
D
1
1
b
1 - GATE
2 - SOURCE
3 - DRAIN
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with-
out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
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P. O. Box 883, Mail Stop 53-204
Melbourne, FL 32902
TEL: (321) 724-7000
FAX: (321) 724-7240
Mercure Center
8F-2, 96, Sec. 1, Chien-kuo North,
Taipei, Taiwan 104
Republic of China
TEL: 886-2-2515-8508
FAX: 886-2-2515-8369
100, Rue de la Fusee
1130 Brussels, Belgium
TEL: (32) 2.724.2111
FAX: (32) 2.724.22.05
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