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FZ8R16K4 [ETC]

IGBT Module ; IGBT模块\n
FZ8R16K4
型号： FZ8R16K4
厂家： ETC    ETC
描述：

IGBT Module
IGBT模块\n

双极性晶体管
文件： 总4页 (文件大小：191K)
中文：  中文翻译
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European Power-  
Semiconductor and  
Electronics Company  
Marketing Information  
FZ 800 R 16 KF4  
61,5  
M8  
18  
screwing depth  
max. 8  
130  
31,5  
114  
C
C
E
E
E
G
C
16,5  
7
M4  
2,5  
28  
18,5  
external connection  
(to be done)  
C
C
C
G
E
E
E
external connection  
(to be done)  
VWK Apr. 1997  
IGBT-Module  
FZ 800 R 16 KF4  
Höchstzulässige Werte / Maximum rated values  
Elektrische Eigenschaften / Electrical properties  
Kollektor-Emitter-Sperrspannung  
Kollektor-Dauergleichstrom  
Periodischer Kollektor Spitzenstrom  
Gesamt-Verlustleistung  
collector-emitter voltage  
VCES  
IC  
1600 V  
800 A  
DC-collector current  
repetitive peak collector current  
total power dissipation  
gate-emitter peak voltage  
DC forward current  
tp=1 ms  
ICRM  
Ptot  
VGE  
IF  
1600 A  
6250 W  
± 20 V  
800 A  
tC=25°C, Transistor /transistor  
Gate-Emitter-Spitzenspannung  
Dauergleichstrom  
Periodischer Spitzenstrom  
Isolations-Prüfspannung  
repetitive peak forw. current  
insulation test voltage  
tp=1ms  
IFRM  
VISOL  
1600 A  
3,4 kV  
RMS, f=50 Hz, t= 1 min.  
Charakteristische Werte / Characteristic values: Transistor  
min.  
typ.  
3,3  
4,4  
5,5  
130  
6
max.  
3,7 V  
Kollektor-Emitter Sättigungsspannung collector-emitter saturation voltage  
iC=800A, vGE=15V, tvj=25°C  
vCE sat  
-
iC=800A, vGE=15V, tvj=125°C  
-
4,8 V  
6,5 V  
Gate-Schwellenspannung  
Eingangskapazität  
gate threshold voltage  
input capacity  
iC=65mA, vCE=vGE, tvj=25°C  
vGE(TO)  
Cies  
4,5  
fO=1MHz,tvj=25°C,vCE=25V, vGE=0V  
-
-
-
-
-
- nF  
Kollektor-Emitter Reststrom  
collector-emitter cut-off current  
vCE=1600V, vGE=0V, tvj=25°C  
vCE=1600V, vGE=0V, tvj=125°C  
vCE=0V, vGE=20V, tvj=25°C  
vCE=0V, vEG=20V, tvj=25°C  
iC=800A,vCE=900V,vL=±15V  
vL=±15V, RG=2,4W, tvj=25°C  
vL=±15V, RG=2,4W, tvj=125°C  
iC=800A,vCE=900V,vL=±15V  
vL=±15V, RG=2,4W, tvj=25°C  
vL=±15V, RG=2,4W, tvj=125°C  
iC=800A,vCE=900V,vL=±15V  
vL=±15V, RG=2,4W, tvj=25°C  
vL=±15V, RG=2,4W, tvj=125°C  
iCES  
- mA  
- mA  
60  
-
Gate-Emitter Reststrom  
Emitter-Gate Reststrom  
Einschaltzeit (induktive Last)  
gate leakage current  
iGES  
iEGS  
ton  
400 nA  
400 nA  
gate leakage current  
-
turn-on time (inductive load)  
-
-
0,8  
1
- µs  
- µs  
Speicherzeit (induktive Last)  
Fallzeit (induktive Last)  
storage time (inductive load)  
fall time (inductive load)  
ts  
-
-
1,1  
1,3  
- µs  
- µs  
tf  
-
-
0,25  
0,3  
- µs  
- µs  
Charakteristische Werte / Characteristic values  
Transistor / Transistor  
Einschaltverlustenergie pro Puls  
turn-on energy loss per pulse  
turn-off energy loss per pulse  
iC=800A,vCE=900V,vL=±15V  
RG=2,4W, tvj=125°C, LS=70nH  
iC=800A,vCE=900V,vL=±15V  
RG=2,4W, tvj=125°C, LS=70nH  
Eon  
Eoff  
-
-
340  
180  
- mWs  
Abschaltverlustenergie pro Puls  
- mWs  
Inversdiode / Inverse diode  
Durchlaßspannung  
forward voltage  
iF=800A, vGE=0V, tvj=25°C  
iF=800A, vGE=0V, tvj=125°C  
iF=800A, -diF/dt=4,5kA/µs  
vRM=900V, vEG=10V, tvj=25°C  
vRM=900V, vEG=10V, tvj=125°C  
iF=800A, -diF/dt=4,5kA/µs  
vF  
-
-
2,4  
2,2  
2,8 V  
- V  
Rückstromspitze  
peak reverse recovery current  
IRM  
-
-
540  
660  
- A  
- A  
Sperrverzögerungsladung  
recovered charge  
Qr  
vRM=900V, vEG=10V, tvj=25°C  
vRM=900V, vEG=10V, tvj=125°C  
-
-
100  
220  
- µAs  
- µAs  
Thermische Eigenschaften / Thermal properties  
Innerer Wärmewiderstand  
thermal resistance, junction to case  
Transistor / transistor, DC  
Diode /diode, DC  
RthJC  
0,02 °C/W  
0,05 °C/W  
0,01 °C/W  
150 °C  
Übergangs-Wärmewiderstand  
Höchstzul. Sperrschichttemperatur  
Betriebstemperatur  
thermal resistance, case to heatsink  
max. junction temperature  
operating temperature  
pro Module / per Module  
RthCK  
tvj max  
tc op  
-40...+125 °C  
Lagertemperatur  
storage temperature  
tstg  
-40...+125 °C  
Mechanische Eigenschaften / Mechanical properties  
Innere Isolation  
internal insulation  
Al2O3  
3 Nm  
Anzugsdrehmoment f. mech. Befestigung / mounting torque  
terminals M6 / tolerance ±10%  
terminals M4 / tolerance +5/-10%  
terminals M8  
M1  
M2  
Anzugsdrehmoment f. elektr. Anschlüsse / terminal connection torque  
2 Nm  
8...10 Nm  
ca. 1500 g  
Gewicht  
weight  
G
Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften zugesichert. Sie gilt in Verbindung mit den  
zugehörigen Technischen Erläuterungen. This technical information specifies semiconductor devices but promises no characteristics. It is valid in  
combination with the belonging technical notes.  
Bedingung für den Kurzschlußschutz / Conditions for short-circuit protection  
tfg = 10 µs  
VCC = 1000 V  
vCEM = 1300 V  
iCMK1 » 8000 A  
iCMK2 » 6000 A  
vL = ±15V  
RGF = RGR = 2,4 W  
tvj = 125°C  
Unabhängig davon gilt bei abweichenden Bedingungen / with regard to other conditions v CEM = VCES - 15nH x |di c/dt|  
FZ 800 R 16 KF4  
1400  
1200  
1600  
1400  
V
=
20 V  
15 V  
GE  
iC  
[A]  
iC  
[A]  
1200  
1000  
1000  
800  
600  
400  
200  
0
12 V  
10 V  
800  
600  
400  
200  
0
9 V  
8 V  
1
2
3
4
5
1
2
3
4
5
vCE [V]  
vCE [V]  
FZ 800 R 16 KF4 / 1  
FZ 800 R 16 KF4 / 2  
Bild / Fig. 1  
Bild / Fig. 2  
Kollektor-Emitter-Spannung im Sättigungsbereich (typisch) /  
Collector-emitter-voltage in saturation region (typical)  
Kollektor-Emitter-Spannung im Sättigungsbereich (typisch) /  
Collector-emitter-voltage in saturation region (typical)  
V
= 15 V  
t = 125°C  
GE  
vj  
t
t
= 25°C  
= 125°C  
vj  
vj  
1600  
1400  
iC  
[A]  
2000  
t
=
125 °C  
25 °C  
vj  
iC  
[A]  
1200  
1500  
1000  
800  
600  
400  
200  
0
1000  
500  
0
5
6
7
8
9
10  
11  
vGE [V]  
12  
0
500  
1000  
1500  
vCE [V]  
2000  
FZ 800 R 16 KF 4 / 3  
FZ 800 R 16 KF4 / 4  
Bild / Fig. 3  
Bild / Fig. 4  
Übertragungscharakteristik (typisch) /  
Transfer characteristic (typical)  
Rückwärts-Arbeitsbereich /  
Reverse biased safe operating area  
t = 125 °C  
vj  
V
= 20 V  
CE  
v
= v = 15 V  
LF  
LR  
R
= 2,4 W  
G
FZ 800 R 16 KF4  
-1  
10  
1600  
1400  
7
Diode  
IGBT  
Z(th)JC  
[°C/W]  
iF  
[A]  
1200  
3
2
1000  
800  
600  
400  
200  
0
-2  
10  
7
5
4
3
2
-3  
10  
-3  
10  
-2  
10  
-1  
0
1
2
3
4 5  
7
2
3
4 5  
7
2
3
4 5  
7
2
3 4 5 7  
0
0,5  
1
1,5  
2
2,5  
3
3,5  
10  
10  
10  
t [s]  
vF [V]  
FZ 800 R 16 KF4 / 5  
FZ 800 R 16 KF 4 / 6  
Bild / Fig. 5  
Bild / Fig. 6  
Transienter innerer Wärmewiderstand (DC) /  
Transient thermal impedance (DC)  
Durchlaßkennlinie der Inversdiode (typisch) /  
Forward characteristic of the inverse diode (typical)  
t
t
= 25°C  
= 125°C  
vj  
vj  

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