HGT5A30N120CN [FAIRCHILD]
Insulated Gate Bipolar Transistor, 75A I(C), 1200V V(BR)CES, N-Channel, TO-247ST, 3 PIN;
| 型号： | HGT5A30N120CN |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | Insulated Gate Bipolar Transistor, 75A I(C), 1200V V(BR)CES, N-Channel, TO-247ST, 3 PIN 局域网 电动机控制 栅 瞄准线 晶体管 |
| 文件： | 总8页 (文件大小：206K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HGTG30N120CN / HGTG5A30N120CN
Data Sheet
August 2002
75A, 1200V, NPT Series N-Channel IGBT
Features
o
The HGTG30N120CN and HGT5A30N120CN are Non-
Punch Through (NPT) IGBT design. This is a new member
of the MOS gated high voltage switching IGBT family. IGBTs
combine the best features of MOSFETs and bipolar
transistors. This device has the high input impedance of a
MOSFET and the low on-state conduction loss of a bipolar
transistor.
• 75A, 1200V, T = 25 C
C
• 1200V Switching SOA Capability
o
• Typical Fall Time. . . . . . . . . . . . . . . . 350ns at T = 150 C
J
• Short Circuit Rating
• Low Conduction Loss
• Avalanche Rated
The IGBT is ideal for many high voltage switching
applications operating at moderate frequencies where low
conduction losses are essential, such as: AC and DC motor
controls, power supplies and drivers for solenoids, relays
and contactors.
• Thermal Impedance SPICE Model
Temperature Compensating SABER™ Model
www.fairchildsemi.com
Packaging
Formerly Developmental Type TA49281.
JEDEC STYLE TO-247
E
C
Ordering Information
COLLECTOR
(BOTTOM SIDE
METAL)
G
PART NUMBER
HGTG30N120CN
HGT5A30N120CN
PACKAGE
TO-247
TO-247-ST
BRAND
30N120CN
30N120CN
NOTE: When ordering, use the entire part number.
Symbol
C
JEDEC STYLE TO-247-ST
E
G
C
COLLECTOR
(BOTTOM SIDE
METAL)
G
E
FAIRCHILD SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,598,461
4,682,195
4,803,533
4,888,627
4,417,385
4,605,948
4,684,413
4,809,045
4,890,143
4,430,792
4,620,211
4,694,313
4,809,047
4,901,127
4,443,931
4,631,564
4,717,679
4,810,665
4,904,609
4,466,176
4,639,754
4,743,952
4,823,176
4,933,740
4,516,143
4,639,762
4,783,690
4,837,606
4,963,951
4,532,534
4,641,162
4,794,432
4,860,080
4,969,027
4,587,713
4,644,637
4,801,986
4,883,767
©2002 Fairchild Semiconductor Corporation
HGTG30N120CN / HGT5A30N120CN Rev. C1
HGTG30N120CN / HGT5A30N120CN
o
Absolute Maximum Ratings
T
= 25 C, Unless Otherwise Specified
C
HGTG30N120CN
UNITS
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BV
1200
V
CES
Collector Current Continuous
o
At T = 25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C
75
A
A
A
V
V
C25
o
At T = 110 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
40
C
C110
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
240
CM
GES
GEM
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
±20
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
o
±30
Switching Safe Operating Area at T = 150 C (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA
J
150A at 1200V
o
Power Dissipation Total at T = 25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
C
500
4.0
W
D
o
o
Power Dissipation Derating T > 25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
W/ C
C
Forward Voltage Avalanche Energy (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
135
mJ
AV
o
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . T , T
-55 to 150
260
C
J
STG
o
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
C
L
SC
SC
Short Circuit Withstand Time (Note 3) at V
Short Circuit Withstand Time (Note 3) at V
= 15V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t
= 12V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t
8
µs
µs
GE
15
GE
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1. Pulse width limited by maximum junction temperature.
o
2. I
CE
= 30A, L = 400µH, T = 125 C.
J
o
3. V
CE(PK)
= 960V, T = 125 C, R = 3Ω.
J
G
o
Electrical Specifications
T = 25 C, Unless Otherwise Specified
C
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
V
Collector to Emitter Breakdown Voltage
Emitter to Collector Breakdown Voltage
Collector to Emitter Leakage Current
BV
BV
I
I
= 250µA, V
= 0V
= 0V
1200
-
-
-
CES
ECS
C
GE
= 10mA, V
15
-
250
-
V
C
GE
o
I
V
= 1200V
T
= 25 C
-
-
µA
µA
mA
V
CES
CE
C
C
C
C
C
o
T
T
T
T
= 125 C
-
600
-
o
= 150 C
-
8
o
Collector to Emitter Saturation Voltage
V
I
= 30,
= 25 C
-
-
2.1
2.9
6.6
-
2.4
3.5
-
CE(SAT)
C
V
= 15V
o
GE
= 150 C
V
Gate to Emitter Threshold Voltage
Gate to Emitter Leakage Current
Switching SOA
V
I
= 250µA, V = V
CE GE
6.0
-
V
GE(TH)
C
I
V
= ±20V
±250
-
nA
A
GES
SSOA
GE
o
T = 150 C, R = 3Ω, V
= 15V,
150
-
J
G
GE
= 1200V
L = 200µH, V
CE(PK)
Gate to Emitter Plateau Voltage
On-State Gate Charge
V
I
= 30A, V
= 600V
CE
-
-
-
-
-
-
-
-
-
-
9.6
260
330
24
-
V
GEP
C
C
Q
I
V
= 30A,
V
= 15V
325
420
30
nC
nC
ns
G(ON)
GE
GE
= 600V
CE
V
= 20V
o
Current Turn-On Delay Time
Current Rise Time
t
IGBT and Diode at T = 25 C
J
d(ON)I
I
= 30A
CE
t
21
26
ns
rI
V
V
R
= 960V
= 15V
= 3Ω
CE
GE
Current Turn-Off Delay Time
Current Fall Time
t
220
180
2.2
2.8
4.2
260
240
-
ns
d(OFF)I
t
ns
G
fI
L = 1mH
Test Circuit (Figure 18)
Turn-On Energy (Note 4)
Turn-On Energy (Note 4)
Turn-Off Energy (Note 5)
E
E
E
mJ
mJ
mJ
ON1
ON2
OFF
3.5
4.8
©2002 Fairchild Semiconductor Corporation
HGTG30N120CN / HGT5A30N120CN Rev. C1
HGTG30N120CN / HGT5A30N120CN
o
Electrical Specifications
T = 25 C, Unless Otherwise Specified (Continued)
C
PARAMETER
Current Turn-On Delay Time
Current Rise Time
SYMBOL
TEST CONDITIONS
MIN
TYP
22
MAX
28
UNITS
ns
o
t
IGBT and Diode at T = 150 C
-
-
-
-
-
-
-
-
d(ON)I
J
I
V
V
R
= 30A
CE
t
21
26
ns
rI
= 960V
= 15V
= 3Ω
CE
GE
Current Turn-Off Delay Time
Current Fall Time
t
260
350
2.6
5.6
6.6
-
300
400
-
ns
d(OFF)I
t
ns
G
fI
L = 1mH
Turn-On Energy (Note 4)
Turn-On Energy (Note 4)
Turn-Off Energy (Note 5)
E
E
E
mJ
mJ
mJ
ON1
ON2
OFF
Test Circuit (Figure 18)
7.0
7.5
0.25
o
Thermal Resistance Junction To Case
NOTES:
R
C/W
θJC
4. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. EON1 is the turn-on loss of the IGBT only. EON2
is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same TJ as the IGBT. The diode type is specified in
Figure 18.
5. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
at the point where the collector current equals zero (ICE = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement
of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
Typical Performance Curves Unless Otherwise Specified
80
70
60
50
40
30
20
200
160
120
80
o
V
= 15V
T
= 150 C, R = 3Ω, V = 15V, L = 200µH
GE
GE
J
G
40
0
10
0
0
200
400
600
800
1000
1200
1400
25
50
75
100
125
150
o
T
, CASE TEMPERATURE ( C)
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
C
FIGURE 1. DC COLLECTOR CURRENT vs CASE
TEMPERATURE
FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA
100
50
40
30
20
500
400
o
= 150 C, R = 3Ω, L = 1mH, V = 960V
CE
o
I
T
SC
J
G
V
= 960V, R = 3Ω, T = 125 C
G J
CE
300
200
100
0
10
f
f
= 0.05 / (t
+ t
)
MAX1
d(OFF)I
d(ON)I
T
C
V
GE
t
SC
= (P - P ) / (E
+ E
)
MAX2
D
C
ON2
OFF
o
15V
75 C
P
= CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
o
10
0
C
75 C 12V
o
110 C 15V
o
o
R
= 0.25 C/W, SEE NOTES
110 C 12V
ØJC
1
11
12
13
14
15
16
5
10
20
60
I
, COLLECTOR TO EMITTER CURRENT (A)
V
, GATE TO EMITTER VOLTAGE (V)
CE
GE
FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO
EMITTER CURRENT
FIGURE 4. SHORT CIRCUIT WITHSTAND TIME
©2002 Fairchild Semiconductor Corporation
HGTG30N120CN / HGT5A30N120CN Rev. C1
HGTG30N120CN / HGT5A30N120CN
Typical Performance Curves Unless Otherwise Specified (Continued)
350
300
250
200
150
100
50
225
200
DUTY CYCLE < 0.5%, V
GE
PULSE DURATION = 250µs
= 15V
DUTY CYCLE < 0.5%, V
GE
PULSE DURATION = 250µs
= 12V
175
150
125
100
75
o
T
= -55 C
o
o
o
C
T
= -55 C
T
= 25 C
T
= 150 C
C
C
C
o
T
= 150 C
C
50
o
T
= 25 C
C
25
0
0
0
2
4
6
8
10
0
2
4
6
8
10
V
, COLLECTOR TO EMITTER VOLTAGE (V)
V
, COLLECTOR TO EMITTER VOLTAGE (V)
CE
CE
FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE
12
15.0
R
= 3Ω, L = 1mH, V
= 960V
CE
R
T
= 3Ω, L = 1mH, V
= 960V
CE
G
G
10
8
12.5
10.0
7.5
5.0
2.5
0
o
o
= 150 , V
= 15V, V
= 12V
T
= 150 C, V
= 12V OR 15V
J
GE
GE
J
GE
6
4
o
T
= 25 C, V = 12V OR 15V
GE
J
2
o
T
= 25 C, V
GE
= 15V, V
45
= 12V
J
GE
0
5
10
15
20
25
30
35
40
50
55
60
5
10
15
I , COLLECTOR TO EMITTER CURRENT (A)
CE
20
25
30
35
40
45
50
55
60
I
, COLLECTOR TO EMITTER CURRENT (A)
CE
FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
80
40
R
= 3Ω, L = 1mH, V = 960V
CE
G
R
= 3Ω, L = 1mH, V
= 960V
CE
G
70
60
50
40
30
20
35
30
25
20
15
o
o
T
= 25 C, T = 150 C, V = 12V
GE
J
J
o
o
T
= 25 C, T = 150 C, V
= 12V
= 15V
J
J
GE
o
= 25 C, T = 150 C, V
GE
o
T
= 15V
55
J
J
10
0
o
o
T
= 25 C, T = 150 C, V
J
J
GE
5
10
15
I , COLLECTOR TO EMITTER CURRENT (A)
CE
20
25
30
35
40
45
50
60
5
10
15
20
25
30
35
40
45
50
55
60
I
, COLLECTOR TO EMITTER CURRENT (A)
CE
FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO
EMITTER CURRENT
©2002 Fairchild Semiconductor Corporation
HGTG30N120CN / HGT5A30N120CN Rev. C1
HGTG30N120CN / HGT5A30N120CN
Typical Performance Curves Unless Otherwise Specified (Continued)
600
500
400
300
200
100
800
700
600
500
400
300
200
R
= 3Ω, L = 1mH, V
= 960V
CE
G
R
= 3Ω, L = 1mH, V = 960V
CE
G
o
o
= 150 C, V
T
= 12V, V
GE
= 15V
T
J
= 150 C, V = 12V AND 15V
GE
J
GE
o
T
= 25 C, V
= 12V AND 15V
J
GE
100
0
o
T
= 25 C, V
= 12V, V
25
= 15V
35
J
GE
GE
5
10
15
20
25
30
35
40
45
50
55 60
5
10
15
20
30
40
45
50
55 60
I
, COLLECTOR TO EMITTER CURRENT (A)
I
, COLLECTOR TO EMITTER CURRENT (A)
CE
CE
FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER
CURRENT
16
500
o
DUTY CYCLE < 0.5%, V
= 20V
I
= 2mA, R = 20Ω, T = 25 C
CE
PULSE DURATION = 250µs
G(REF)
L
C
14
12
10
8
o
T
= -55 C
C
400
300
200
o
V
= 1200V
CE
T
= 25 C
C
o
T
= 150 C
C
V
= 800V
V
= 400V
CE
CE
6
4
100
0
2
0
0
50
100
150
200
250
300
7
8
9
10
11
12
13
14
15
Q
G
, GATE CHARGE (nC)
V
, GATE TO EMITTER VOLTAGE (V)
GE
FIGURE 13. TRANSFER CHARACTERISTIC
FIGURE 14. GATE CHARGE WAVEFORMS
10
40
o
FREQUENCY = 1MHz
DUTY CYCLE < 0.5%, T = 110 C
C
PULSE DURATION = 250µs
C
35
30
25
20
15
10
5
IES
V
= 15V
8
6
4
2
0
GE
V
GE
= 10V
C
OES
C
RES
0
0
0.5
1.0
1.5
2.0
2.5
3.0
0
5
10
15
20
25
V
, COLLECTOR TO EMITTER VOLTAGE (V)
V
, COLLECTOR TO EMITTER VOLTAGE (V)
CE
CE
FIGURE 15. CAPACITANCE vs COLLECTOR TO EMITTER
VOLTAGE
FIGURE 16. COLLECTOR TO EMITTER ON-STATE VOLTAGE
©2002 Fairchild Semiconductor Corporation
HGTG30N120CN / HGT5A30N120CN Rev. C1
HGTG30N120CN / HGT5A30N120CN
Typical Performance Curves Unless Otherwise Specified (Continued)
0
10
0.5
0.2
0.1
-1
10
0.05
0.02
0.01
t
1
P
D
0
DUTY FACTOR, D = t / t
1
2
t
SINGLE PULSE
PEAK T = (P X Z
X R
) + T
θJC C
2
J
D
θJC
-2
10
-5
-4
10
-3
-2
-1
1
10
10
10
10
10
10
t , RECTANGULAR PULSE DURATION (s)
1
FIGURE 17. NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE
Test Circuit and Waveforms
RHRP30120
90%
OFF
10%
ON2
V
GE
E
E
L = 1mH
V
CE
R
= 3Ω
G
90%
10%
d(OFF)I
+
-
I
CE
t
t
V
= 960V
rI
DD
t
fI
t
d(ON)I
FIGURE 18. INDUCTIVE SWITCHING TEST CIRCUIT
FIGURE 19. SWITCHING TEST WAVEFORMS
©2002 Fairchild Semiconductor Corporation
HGTG30N120CN / HGT5A30N120CN Rev. C1
HGTG30N120CN / HGT5A30N120CN
Handling Precautions for IGBTs
Operating Frequency Information
Insulated Gate Bipolar Transistors are susceptible to
gate-insulation damage by the electrostatic discharge of
energy through the devices. When handling these devices,
care should be exercised to assure that the static charge
built in the handler’s body capacitance is not discharged
through the device. With proper handling and application
procedures, however, IGBTs are currently being extensively
used in production by numerous equipment manufacturers in
military, industrial and consumer applications, with virtually
no damage problems due to electrostatic discharge. IGBTs
can be handled safely if the following basic precautions are
taken:
Operating frequency information for a typical device
(Figure 3) is presented as a guide for estimating device
performance for a specific application. Other typical
frequency vs collector current (I ) plots are possible using
CE
the information shown for a typical unit in Figures 5, 6, 7, 8, 9
and 11. The operating frequency plot (Figure 3) of a typical
device shows f
or f
; whichever is smaller at each
MAX1
MAX2
point. The information is based on measurements of a
typical device and is bounded by the maximum rated
junction temperature.
f
is defined by f
= 0.05/(t ).
+ t
MAX1
MAX1
d(OFF)I d(ON)I
Deadtime (the denominator) has been arbitrarily held to 10%
1. Prior to assembly into a circuit, all leads should be kept
shorted together either by the use of metal shorting
springs or by the insertion into conductive material such
as “ECCOSORBD™ LD26” or equivalent.
of the on-state time for a 50% duty factor. Other definitions
are possible. t
d(OFF)I
and t are defined in Figure 19.
d(ON)I
Device turn-off delay can establish an additional frequency
limiting condition for an application other than T . t
JM d(OFF)I
2. When devices are removed by hand from their carriers,
the hand being used should be grounded by any suitable
means - for example, with a metallic wristband.
is important when controlling output ripple under a lightly
loaded condition.
f
is defined by f
MAX2
= (P - P )/(E
OFF
+ E ). The
ON2
MAX2
D
C
3. Tips of soldering irons should be grounded.
allowable dissipation (P ) is defined by P = (T - T )/R
.
D
D
JM θJC
C
4. Devices should never be inserted into or removed from
circuits with power on.
The sum of device switching and conduction losses must
not exceed P . A 50% duty factor was used (Figure 3) and
D
5. Gate Voltage Rating - Never exceed the gate-voltage
the conduction losses (P ) are approximated by
C
rating of V
. Exceeding the rated V can result in
GEM
GE
P
= (V
CE
x I )/2.
CE
C
permanent damage to the oxide layer in the gate region.
E
and E
OFF
are defined in the switching waveforms
is the integral of the
6. Gate Termination - The gates of these devices are
essentially capacitors. Circuits that leave the gate
open-circuited or floating should be avoided. These
conditions can result in turn-on of the device due to
voltage buildup on the input capacitor due to leakage
currents or pickup.
ON2
shown in Figure 19. E
instantaneous power loss (I
ON2
x V ) during turn-on and
CE
CE
E
is the integral of the instantaneous power loss
OFF
(I
x V ) during turn-off. All tail losses are included in the
CE
CE
calculation for E
; i.e., the collector current equals zero
OFF
7. Gate Protection - These devices do not have an internal
monolithic Zener diode from gate to emitter. If gate
protection is required an external Zener is recommended.
(I
= 0).
CE
©2002 Fairchild Semiconductor Corporation
HGTG30N120CN / HGT5A30N120CN Rev. C1
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Rev. I1
相关型号：
HGTD10N40F1S9A
Insulated Gate Bipolar Transistor, 12A I(C), 400V V(BR)CES, N-Channel, TO-252AA
RENESAS
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